LT5524 [Linear]
400MHz to 3.7GHz High Signal Level Downconverting Mixer; 400MHz到3.7GHz的高信号电平下变频混频器型号: | LT5524 |
厂家: | Linear |
描述: | 400MHz to 3.7GHz High Signal Level Downconverting Mixer |
文件: | 总16页 (文件大小:222K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LT5527
400MHz to 3.7GHz
High Signal Level
Downconverting Mixer
U
FEATURES
DESCRIPTIO
The LT®5527 active mixer is optimized for high linearity,
wide dynamic range downconverter applications. The IC
includes a high speed differential LO buffer amplifier
driving a double-balanced mixer. Broadband, integrated
transformers on the RF and LO inputs provide single-
ended 50Ω interfaces. The differential IF output allows
convenient interfacing to differential IF filters and amplifi-
ers, or is easily matched to drive 50Ω single-ended, with
or without an external transformer.
■
50
Ω
Single-Ended RF and LO Ports
■
■
Wide RF Frequency Range: 400MHz to 3.7GHz*
High Input IP3: 24.5dBm at 900MHz
23.5dBm at 1900MHz
■
Conversion Gain: 3.2dB at 900MHz
2.3dB at 1900MHz
Integrated LO Buffer: Low LO Drive Level
High LO-RF and LO-IF Isolation
Low Noise Figure: 11.6dB at 900MHz
12.5dB at 1900MHz
Very Few External Components
Enable Function
4.5V to 5.25V Supply Voltage Range
■
■
■
The RF input is internally matched to 50Ω from 1.7GHz to
3GHz, and the LO input is internally matched to 50Ω from
1.2GHz to 5GHz. The frequency range of both ports is
easily extended with simple external matching. The IF
output is partially matched and usable for IF frequencies
up to 600MHz.
■
■
■
■
16-Lead (4mm ×U4mm) QFN Package
APPLICATIO S
The LT5527’s high level of integration minimizes the total
solution cost, board space and system-level variation.
, LTC and LT are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
*Operation over a wider frequency range is possible with reduced performance. Consult factory for
information and assistance.
■
Cellular, WCDMA, TD-SCDMA and UMTS
Infrastructure
■
GSM900/GSM1800/GSM1900 Infrastructure
■
900MHz/2.4GHz/3.5GHz WLAN
■
MMDS, WiMAX
■
High Linearity Downmixer Applications
U
TYPICAL APPLICATIO
High Signal Level Downmixer for Multi-Carrier Wireless Infrastructure
1.9GHz Conversion Gain, IIP3, SSB NF and
LO-RF Leakage vs LO Power
LO INPUT
–3dBm (TYP)
24
22
20
18
16
14
12
10
8
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
–75
IIP3
LT5527
IF = 240MHz
LOW SIDE LO
T
= 25°C
A
CC
4.7pF
V
= 5V
+
–
100nH
IF
IF
SSB NF
1nF
IF
220nH
100nH
OUTPUT
240MHz
LO-RF
4.7pF
RF
RF
INPUT
6
4
G
C
BIAS
EN
2
–9
–7
–5
–3
–1
1
3
V
V
CC1
GND
CC2
LO POWER (dBm)
5V
5527 TA01b
1nF
1µF
5527 TA01a
5527f
1
LT5527
W W U W
U W
U
ABSOLUTE AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
(Note 1)
Supply Voltage (VCC1, VCC2, IF+, IF–) ...................... 5.5V
Enable Voltage ............................... –0.3V to VCC + 0.3V
LO Input Power (380MHz to 4GHz) .................. +10dBm
LO Input DC Voltage ............................ –1V to VCC + 1V
RF Input Power (400MHz to 4GHz) .................. +12dBm
RF Input DC Voltage ............................................ ±0.1V
Operating Temperature Range ............... –40°C to 85°C
Storage Temperature Range ................ –65°C to 125°C
Junction Temperature (TJ)................................... 125°C
TOP VIEW
ORDER PART
NUMBER
16 15 14 13
NC
NC
RF
NC
1
2
3
4
12 GND
LT5527EUF
+
11 IF
17
–
IF
10
9
GND
5
6
7
8
UF PART MARKING
5527
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
TJMAX = 125°C, θJA = 37°C/W
EXPOSED PAD (PIN 17) IS GND
MUST BE SOLDERED TO PCB
Consult LTC Marketing for parts specified with wider operating temperature ranges.
DC ELECTRICAL CHARACTERISTICS
VCC = 5V, EN = High, TA = 25°C, unless otherwise specified. Test circuit shown in Figure 1. (Note 3)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Power Supply Requirements (V
Supply Voltage
)
CC
4.5
5
5.25
V DC
Supply Current
V
V
(Pin 7)
23.2
2.8
52
mA
mA
mA
mA
CC1
(Pin 6)
CC2
+
–
IF + IF (Pin 11 + Pin 10)
Total Supply Current
60
88
78
Enable (EN) Low = Off, High = On
Shutdown Current
EN = Low
100
µA
V DC
V DC
µA
Input High Voltage (On)
Input Low Voltage (Off)
EN Pin Input Current
Turn-ON Time
3
0.3
90
EN = 5V DC
50
3
µs
Turn-OFF Time
3
µs
AC ELECTRICAL CHARACTERISTICS
Test circuit shown in Figure 1. (Notes 2, 3)
MIN
PARAMETER
CONDITIONS
TYP
MAX
UNITS
RF Input Frequency Range
No External Matching (Midband)
With External Matching (Low Band or High Band)
1700 to 3000
MHz
MHz
400
380
3700
LO Input Frequency Range
No External Matching
With External Matching
1200 to 3500
MHz
MHz
IF Output Frequency Range
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
LO Input Power
Requires Appropriate IF Matching
0.1 to 600
>10
MHz
dB
Z = 50Ω, 1700MHz to 3000MHz
O
Z = 50Ω, 1200MHz to 3400MHz
O
>12
dB
Differential at 240MHz
407Ω||2.5pF
R||C
1200MHz to 3500MHz
380MHz to 1200MHz
–8
–5
–3
0
2
5
dBm
dBm
5527f
2
LT5527
AC ELECTRICAL CHARACTERISTICS
IF output measured at 240MHz, unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4)
Standard Downmixer Application: VCC = 5V, EN = High, TA = 25°C,
PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), fLO = fRF – fIF, PLO = –3dBm (0dBm for 450MHz and 900MHz tests),
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Gain
RF = 450MHz, IF = 140MHz, High Side LO
RF = 900MHz, IF = 140MHz
RF = 1700MHz
RF = 1900MHz
RF = 2200MHz
RF = 2650MHz
RF = 3500MHz, IF = 380MHz
2.5
3.4
2.3
2.3
2.0
1.8
0.3
dB
dB
dB
dB
dB
dB
dB
Conversion Gain vs Temperature
Input 3rd Order Intercept
T = –40°C to 85°C, RF = 1900MHz
–0.018
dB/°C
A
RF = 450MHz, IF = 140MHz, High Side LO
RF = 900MHz, IF = 140MHz
RF = 1700MHz
RF = 1900MHz
RF = 2200MHz
RF = 2650MHz
RF = 3500MHz, IF = 380MHz
23.2
24.5
24.2
23.5
22.7
20.8
18.2
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Single-Sideband Noise Figure
RF = 450MHz, IF = 140MHz, High Side LO
RF = 900MHz, IF = 140MHz
RF = 1700MHz
RF = 1900MHz
RF = 2200MHz
13.3
11.6
12.1
12.5
13.2
13.9
16.1
dB
dB
dB
dB
dB
dB
dB
RF = 2650MHz
RF = 3500MHz, IF = 380MHz
LO to RF Leakage
f
f
= 400MHz to 2100MHz
= 2100MHz to 3200MHz
≤–44
≤–36
dBm
dBm
LO
LO
LO to IF Leakage
f
f
= 400MHz to 700MHz
= 700MHz to 3200MHz
≤–40
≤–50
dBm
dBm
LO
LO
RF to LO Isolation
f
f
= 400MHz to 2200MHz
= 2200MHz to 3700MHz
>43
>38
dB
dB
RF
RF
RF to IF Isolation
f
f
= 400MHz to 800MHz
= 800MHz to 3700MHz
>42
>54
dB
dB
RF
RF
2RF-2LO Output Spurious Product
900MHz: f = 830MHz at –5dBm, f = 140MHz
–60
–65
dBc
dBc
RF
IF
(f = f + f /2)
1900MHz: f = 1780MHz at –5dBm, f = 240MHz
RF
LO
IF
RF IF
3RF-3LO Output Spurious Product
(f = f + f /3)
900MHz: f = 806.67MHz at –5dBm, f = 140MHz
–73
–63
dBc
dBc
RF
IF
1900MHz: f = 1740MHz at –5dBm, f = 240MHz
RF
LO
IF
RF
IF
Input 1dB Compression
RF = 450MHz, IF = 140MHz, High Side LO
RF = 900MHz, IF = 140MHz
RF = 1900MHz
9.5
8.9
9.0
dBm
dBm
dBm
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: 450MHz, 900MHz and 3500MHz performance measured with
Note 4: SSB Noise Figure measurements performed with a small-signal
noise source and bandpass filter on RF input, and no other RF signal
applied.
external LO and RF matching. See Figure 1 and Applications Information.
Note 3: Specifications over the –40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
5527f
3
LT5527
W U
Midband (No external RF/LO matching)
TYPICAL AC PERFOR A CE CHARACTERISTICS
VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), PLO = –3dBm, IF output measured at 240MHz,
unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain, IIP3 and NF
vs RF Frequency
LO Leakage vs LO Frequency
RF Isolation vs RF Frequency
–30
–35
–40
–45
–50
–55
–60
–65
–70
–75
–80
–85
–90
–30
–35
–40
–45
–50
–55
–60
–65
–70
–75
–80
–85
–90
24
22
20
18
16
14
12
10
8
T
= 25°C
T
= 25°C
LO
A
A
P
IIP3
= –3dBm
LO-RF
RF-LO
SSB NF
LO-IF
T
= 25°C
A
RF-IF
IF = 240MHz
LOW SIDE LO
HIGH SIDE LO
6
4
G
C
2
0
1200
1800 2100 2400 2700 3000
LO FREQUENCY (MHz)
1500
1700
1900
2300
RF FREQUENCY (MHz)
2500
2700
1700
1900
2100
2300
2500
2700
2100
RF FREQUENCY (MHz)
5527 G02
5527 G03
5527 G01
Conversion Gain and IIP3
vs Temperature (Low Side LO)
Conversion Gain and IIP3
vs Temperature (High Side LO)
1900MHz Conversion Gain, IIP3
and NF vs Supply Voltage
25
24
23
22
21
20
19
18
17
16
15
10
9
8
7
6
5
4
3
2
1
0
24
22
20
25
24
23
22
21
20
19
18
17
16
15
10
9
8
7
6
5
4
3
2
1
0
IIP3
IIP3
IIP3
LOW SIDE LO
IF = 240MHz
–40°C
18
16
14
25°C
85°C
IF = 240MHz
1700MHz
1900MHz
2200MHz
IF = 240MHz
12
10
8
1700MHz
1900MHz
2200MHz
SSB NF
6
G
C
4
G
G
C
C
2
0
5
–50 –25
25
50
75
100
4.5
4.75
5.25
5.5
0
–50 –25
25
50
75
100
0
TEMPERATURE (°C)
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
5527 G05
5527 G06
5527 G04
1700MHz Conversion Gain, IIP3
and NF vs LO Power
1900MHz Conversion Gain, IIP3
and NF vs LO Power
2200MHz Conversion Gain, IIP3
and NF vs LO Power
24
25
23
21
19
17
15
13
11
9
24
22
20
18
16
14
12
10
8
22
20
18
16
14
12
10
8
IIP3
IIP3
LOW SIDE LO
IF = 240MHz
–40°C
IIP3
LOW SIDE LO
IF = 240MHz
–40°C
25°C
25°C
85°C
SSB NF
SSB NF
85°C
SSB NF
LOW SIDE LO
IF = 240MHz
–40°C
25°C
6
7
6
85°C
G
C
G
C
4
5
4
G
C
2
3
2
0
1
0
–9
–5
–3
–1
1
3
–7
–9
–5
–3
–1
1
3
–9
–5
–3
–1
1
3
–7
–7
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
5527 G09
5527 G07
5527 G08
5527f
4
LT5527
W U
Midband (No external RF/LO matching)
VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), PLO = –3dBm, IF output measured at 240MHz,
TYPICAL AC PERFOR A CE CHARACTERISTICS
unless otherwise noted. Test circuit shown in Figure 1.
IF Output Power, IM3 and IM5 vs
RF Input Power (2 Input Tones)
IFOUT, 2 × 2 and 3 × 3 Spurs
2 × 2 and 3 × 3 Spurs
vs RF Input Power (Single Tone)
vs LO Power (Single Tone)
10
0
15
5
–50
–55
–60
–65
–70
–75
–80
–85
–90
–95
–100
T
= 25°C
A
LO = 1660MHz
IF = 240MHz
IF
3RF-3LO
OUT
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
–5
(RF = 1740MHz)
IF
OUT
(RF = 1900MHz)
–15
–25
–35
–45
–55
–65
–75
–85
–95
T
= 25°C
A
2RF-2LO
(RF = 1780MHz)
RF1 = 1899.5MHz
RF2 = 1900.5MHz
LO = 1660MHz
3RF-3LO
(RF = 1740MHz)
2RF-2LO
(RF = 1780MHz)
T
= 25°C
A
IM3
LO = 1660MHz
IF = 240MHz
P
= –5dBm
IM5
RF
–21
–15 –12 –9
–6
–3
0
–18
–9 –6
3
6
–9
–7
–3
–1
1
3
–18 –15 –12
–3
0
9
12
–5
RF INPUT POWER (dBm/TONE) 5527 G10
LO INPUT POWER (dBm)
5527 G12
5527 G11
RF INPUT POWER (dBm)
High Band (3500MHz application with external RF matching) VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests,
∆f = 1MHz), low side LO, PLO = –3dBm, IF output measured at 380MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain, IIP3 and SSB
NF vs RF Frequency
3500MHz Conversion Gain, IIP3
and SSB NF vs LO Power
LO Leakage and RF-LO Isolation
vs LO and RF Frequency
–20
–30
–40
–50
–60
–70
60
50
40
30
20
10
20
18
16
14
12
10
8
19
17
15
13
11
9
IIP3
IIP3
SSB NF
SSB NF
LO-RF
LOW SIDE LO
IF = 380MHz
LOW SIDE LO
IF = 380MHz
= 25°C
RF-LO
T
T
= 25°C
A
A
7
6
5
4
3
LO-IF
G
C
2
1
G
C
0
–1
3200
3400
3600
3000
3800
3300
3400
3500
3600
3700
–9
–7
–3
–1
1
3
–5
5527 G15
5527 G13
LO/RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO INPUT POWER (dBm)
5527 G14
Low Band (450MHz application with external RF/LO matching) VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests,
∆f = 1MHz), PLO = 0dBm, IF output measured at 140MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain, IIP3 and NF
vs RF Frequency
450MHz Conversion Gain,
IIP3 and NF vs LO Power
LO Leakage vs LO Frequency
24
22
20
18
16
14
12
10
8
–20
–30
24
22
20
T
= 25°C
LO
A
P
= 0dBm
IIP3
IIP3
HIGH SIDE LO
IF = 140MHz
–40°C
25°C
85°C
HIGH SIDE LO
T
= 25°C
LO-IF
(450MHz APP)
A
18
16
14
LO-RF
(900MHz APP)
IF = 140MHz
–40
–50
SSB NF
SSB NF
12
10
8
LO-RF
(450MHz APP)
–60
–70
–80
LO-IF
(900MHz APP)
6
6
G
C
4
4
2
2
G
C
0
0
450
–6
–2
0
2
4
6
400
600
800
1000
1200
400
425
475
500
–4
5527 G19
LO INPUT POWER (dBm)
5527 G20
LO FREQUENCY (MHz)
5527 G18
RF FREQUENCY (MHz)
5527f
5
LT5527
W U
Low Band (900MHz application with external
TYPICAL AC PERFOR A CE CHARACTERISTICS
RF/LO matching) VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), PLO = 0dBm, IF output measured at
140MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain, IIP3 and NF vs
900MHz Conversion Gain, IIP3 and
NF vs LO Power (Low Side LO)
IFOUT, 2 × 2 and 3 × 3 Spurs
RF Frequency (900MHz Low Side
Application)
vs RF Input Power (Single Tone)
25
23
21
19
17
15
13
11
9
20
10
25
23
21
19
17
15
13
11
9
T
= 25°C
A
IIP3
LO = 760MHz
IF = 140MHz
IIP3
LOW SIDE LO
IF = 140MHz
–40°C
0
IF
LOW SIDE LO
OUT
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
(RF = 900MHz)
T
= 25°C
A
25°C
IF = 140MHz
85°C
SSB NF
2RF-2LO
(RF = 830MHz)
SSB NF
7
7
G
C
3RF-3LO
(RF = 806.67MHz)
5
5
G
C
3
3
1
1
–6
–2
0
2
4
6
–4
–18 –15 –12 –9 –6 –3
0
3
6
9
12
750
850
900
950
1000 1050
800
LO INPUT POWER (dBm)
5527 G22
RF FREQUENCY (MHz)
5527 G21
5527 G23
RF INPUT POWER (dBm)
Conversion Gain, IIP3 and NF vs
RF Frequency (900MHz High Side
Application)
900MHz Conversion Gain, IIP3 and
NF vs LO Power (High Side LO)
2 × 2 and 3 × 3 Spurs
vs LO Power (Single Tone)
25
23
21
19
17
15
13
11
9
25
23
21
19
17
15
13
11
9
–40
–45
–50
–55
–60
–65
–70
–75
–80
–85
–90
T
= 25°C
A
IIP3
LO = 760MHz
IF = 140MHz
IIP3
HIGH SIDE LO
IF = 140MHz
–40°C
P
= –5dBm
HIGH SIDE LO
RF
T
= 25°C
A
2RF-2LO
(RF = 830MHz)
IF = 140MHz
25°C
85°C
SSB NF
SSB NF
3RF-3LO
(RF = 806.67MHz)
7
7
G
C
5
5
G
C
3
3
1
1
750
850
900
950
1000 1050
–6
–2
0
2
4
6
–6
–4
0
2
4
6
800
–4
–2
RF FREQUENCY (MHz)
5527 G24
LO INPUT POWER (dBm)
5527 G25
LO INPUT POWER (dBm)
5527 G26
W U
Test circuit shown in Figure 1.
TYPICAL DC PERFOR A CE CHARACTERISTICS
Supply Current vs Supply Voltage
Shutdown Current vs Supply Voltage
82
81
80
79
78
76
75
74
73
72
71
100
10
1
85°C
60°C
25°C
0°C
–40°C
85°C
60°C
25°C
0°C
–40°C
0.1
4.5
4.75
5
5.25
5.5
4.5
4.75
5
5.25
5.5
5527 G16
SUPPLY VOLTAGE (V)
5527 G17
SUPPLY VOLTAGE (V)
5527f
6
LT5527
U
U
U
PI FU CTIO S
NC(Pins 1, 2, 4, 8, 13, 14, 16): Not Connected Internally.
These pins should be grounded on the circuit board for
improved LO-to-RF and LO-to-IF isolation.
be externally connected to the VCC2 pin and decoupled
with 1000pF and 1µF capacitors.
GND (Pins 9, 12): Ground. These pins are internally
connected to the backside ground for improved isolation.
They should be connected to the RF ground on the circuit
board, although they are not intended to replace the
primary grounding through the backside contact of the
package.
IF–, IF+ (Pins 10, 11): Differential Outputs for the IF
Signal. An impedance transformation may be required to
match the outputs. These pins must be connected to VCC
through impedance matching inductors, RF chokes or a
transformer center tap.
RF (Pin 3): Single-Ended Input for the RF Signal. This pin
is internally connected to the primary side of the RF input
transformer,whichhaslowDCresistancetoground.Ifthe
RF source is not DC blocked, then a series blocking
capacitormustbeused.TheRFinputisinternallymatched
from 1.7GHz to 3GHz. Operation down to 400MHz or up to
3700MHz is possible with simple external matching.
EN (Pin 5): Enable Pin. When the input enable voltage is
higherthan3V, themixercircuitssuppliedthroughPins6,
7, 10 and 11 are enabled. When the input voltage is less
than 0.3V, all circuits are disabled. Typical input current is
50µAforEN=5Vand0µAwhenEN=0V.TheENpinshould
not be left floating. Under no conditions should the EN pin
voltage exceed VCC + 0.3V, even at start-up.
LO (Pin 15): Single-Ended Input for the Local Oscillator
Signal. This pin is internally connected to the primary side
of the LO transformer, which is internally DC blocked. An
external blocking capacitor is not required. The LO input is
internally matched from 1.2GHz to 5GHz. Operation down
to 380MHz is possible with simple external matching.
VCC2 (Pin 6): Power Supply Pin for the Bias Circuits.
Typical current consumption is 2.8mA. This pin should be
externally connected to the VCC1 pin and decoupled with
1000pF and 1µF capacitors.
Exposed Pad (Pin 17): Circuit Ground Return for the
EntireIC.Thismustbesolderedtotheprintedcircuitboard
ground plane.
VCC1 (Pin 7): Power Supply Pin for the LO Buffer Circuits.
Typical current consumption is 23.2mA. This pin should
W
BLOCK DIAGRA
15
LO
REGULATOR
EXPOSED
PAD
LIMITING
AMPLIFIERS
17
V
CC1
12
11
GND
LINEAR
AMPLIFIER
+
IF
–
RF
IF
3
10
9
DOUBLE-BALANCED
MIXER
GND
BIAS
EN
V
V
7
CC2
CC1
5
6
5525 BD
5527f
7
LT5527
TEST CIRCUITS
LO
IN
L4
C4
RF
GND
εR = 4.4
0.018"
0.062"
0.018"
BIAS
GND
16
15 14
13
EXTERNAL MATCHING
FOR LOW FREQUENCY
LO ONLY
NC LO NC NC
1
2
12
11
T1
NC
NC
GND
L1
L2
+
3
2
1
4
5
•
•
IF
Z
O
C3
LT5527
RF
IN
50Ω
3
4
10
9
IF
OUT
240MHz
–
IF
GND
NC
RF
L (mm)
C5
NC
EN
V
V
CC2 CC1
EXTERNAL MATCHING
FOR LOW BAND OR
HIGH BAND ONLY
5
6
7
8
EN
V
CC
C1
C2
APPLICATION
RF LO
LO MATCH
RF MATCH
GND
L4
C4
10pF
5.6pF
2.7pF
—
L
C5
5527 F01
450MHz High Side 6.8nH
900MHz Low Side 3.9nH
4.5mm
1.3mm
1.3mm
4.5mm
12pF
3.9pF
3.9pF
0.5pF
900MHz High Side
3500MHz Low Side
—
—
REF DES
C1
VALUE
1000pF
1µF
SIZE
0402
0603
0402
PART NUMBER
REF DES
L4, C4, C5
L1, L2
VALUE
SIZE
PART NUMBER
AVX 04025C102JAT
AVX 0603ZD105KAT
AVX 04025A2R7CAT
0402
0603
See Applications Information
Toko LLQ1608-A82N
C2
82nH
4:1
C3
2.7pF
T1
M/A-Com ETC4-1-2 (2MHz to 800MHz)
Figure 1. Downmixer Test Schematic—Standard IF Matching (240MHz IF)
LO
IN
L4
C4
DISCRETE
IF BALUN
16
15 14
13
EXTERNAL MATCHING
FOR LOW FREQUENCY
LO ONLY
NC LO NC NC
1
2
12
11
C6
L1
NC
NC
GND
+
IF
C3
IF
OUT
240MHz
Z
O
L3
LT5527
RF
IN
50Ω
C7
3
4
10
9
–
IF
GND
NC
RF
L (mm)
C5
NC
L2
EN
V
V
CC2 CC1
EXTERNAL MATCHING
FOR LOW BAND OR
HIGH BAND ONLY
5
6
7
8
EN
V
CC
C1
C2
GND
5527 F02
REF DES
C1, C3
C2
VALUE
1000pF
1µF
SIZE
0402
0603
0402
PART NUMBER
REF DES
L4, C4, C5
L1, L2
VALUE
SIZE
PART NUMBER
AVX 04025C102JAT
AVX 0603ZD105KAT
AVX 04025A4R7CAT
0402
0603
0603
See Applications Information
Toko LLQ1608-AR10
100nH
220nH
C6, C7
4.7pF
L3
Toko LLQ1608-AR22
Figure 2. Downmixer Test Schematic—Discrete IF Balun Matching (240MHz IF)
5527f
8
LT5527
W U U
APPLICATIO S I FOR ATIO
U
Introduction
at Pin 3, which improves the 1.7GHz return loss to greater
than 20dB. Likewise, the 2.7GHz match can be improved
to greater than 30dB with a series 1.5nH inductor. A series
1.5nH/2.7pFnetworkwillsimultaneouslyoptimizethelower
and upper band edges and expand the RF input bandwidth
to 1.1GHz-3.3GHz. Measured RF input return losses for
these three cases are also plotted in Figure 4a.
The LT5527 consists of a high linearity double-balanced
mixer, RF buffer amplifier, high speed limiting LO buffer
amplifier and bias/enable circuits. The RF and LO inputs
are both single ended. The IF output is differential. Low
side or high side LO injection can be used.
Two evaluation circuits are available. The standard evalu-
ationcircuit, showninFigure1, incorporatestransformer-
based IF matching and is intended for applications that
require the lowest LO-IF leakage levels and the widest IF
bandwidth. The second evaluation circuit, shown in Fig-
ure 2, replaces the IF transformer with a discrete IF balun
for reduced solution cost and size. The discrete IF balun
delivers comparable noise figure and linearity, higher
conversion gain, but degraded LO-IF leakage and reduced
IF bandwidth.
Alternatively, the input match can be shifted down, as low
as400MHzorupto3700MHz, byaddingashuntcapacitor
(C5)totheRFinput.A450MHzinputmatchisrealizedwith
C5 = 12pF, located 4.5mm away from Pin 3 on the evalu-
ation board’s 50Ω input transmission line. A 900MHz in-
put match requires C5 = 3.9pF, located at 1.3mm. A
3500MHz input match is realized with C5 = 0.5pF, located
0
NO EXTERNAL
MATCHING
–5
RF Input Port
–10
–15
The mixer’s RF input, shown in Figure 3, consists of an
integrated transformer and a high linearity differential
amplifier. The primary terminals of the transformer are
connected to the RF input pin (Pin 3) and ground. The
secondary side of the transformer is internally connected
to the amplifier’s differential inputs.
–20
SERIES 1.5nH
SERIES 2.7pF
SERIES 2.7pF
–25
–30
SERIES 1.5nH
2.7 3.2
FREQUENCY (GHz)
0.2 0.7 1.2 1.7 2.2
3.7 4.2
One terminal of the transformer’s primary is internally
grounded. If the RF source has DC voltage present, then a
couplingcapacitormustbeusedinserieswiththeRFinput
pin.
5527 F04a
(4a) Series Reactance Matching
0
–5
The RF input is internally matched from 1.7GHz to 3GHz,
requiring no external components over this frequency
range. The input return loss, shown in Figure 4a, is typi-
cally 10dB at the band edges. The input match at the lower
band edge can be optimized with a series 2.7pF capacitor
–10
–15
–20
–25
–30
NO EXTERNAL
MATCHING
3.5GHz
900MHz
C5 = 3.9pF
L = 1.3mm
C5 = 0.5pF
450MHz
C5 = 12pF
L = 4.5mm
L = 4.5mm
EXTERNAL MATCHING
FOR LOW BAND OR
HIGH BAND ONLY
TO
MIXER
2.7 3.2
0.2 0.7 1.2 1.7 2.2
RF FREQUENCY (GHz)
3.7 4.2
Z
O
= 50Ω
RF
IN
L = L (mm)
RF
3
5527 F04b
C5
(4b) Series Shunt Matching
5527 F03
Figure 4. RF Input Return Loss With
and Without External Matching
Figure 3. RF Input Schematic
5527f
9
LT5527
W U U
U
APPLICATIO S I FOR ATIO
at 4.5mm. This series transmission line/shunt capacitor
matching topology allows the LT5527 to be used for mul-
tiple frequency standards without circuit board layout
modifications. The series transmission line can also be
replaced with a series chip inductor for a more compact
layout.
The LO input is internally matched from 1.2GHz to 5GHz,
although the maximum useful frequency is limited to
3.5GHz by the internal amplifiers. The input match can be
shifted down, as low as 750MHz, with a single shunt
capacitor (C4) on Pin 15. One example is plotted in
Figure 6 where C4 = 2.7pF produces an 850MHz to
1.2GHz match.
Input return loss for these three cases (450MHz, 900MHz
and 3500MHz) are plotted in Figure 4b. The input return
loss with no external matching is repeated in Figure 4b for
comparison.
LO input matching below 750MHz requires the series
inductor (L4)/shunt capacitor (C4) network shown in
Figure 5. Two examples are plotted in Figure 6 where L4 =
3.9nH/C4 = 5.6pF produces a 650MHz to 830MHz match
and L4 = 6.8nH/C4 = 10pF produces a 540MHz to 640MHz
match. The evaluation boards do not include pads for L4,
so the circuit trace needs to be cut near Pin 15 to insert L4.
A low cost multilayer chip inductor is adequate for L4.
RF input impedance and S11 versus frequency (with no
external matching) is listed in Table 1 and referenced to
Pin 3. The S11 data can be used with a microwave circuit
simulator to design custom matching networks and simu-
late board-level interfacing to the RF input filter.
The optimum LO drive is –3dBm for LO frequencies above
1.2GHz, although the amplifiers are designed to accom-
modate several dB of LO input power variation without
significant mixer performance variation. Below 1.2GHz,
Table 1. RF Input Impedance vs Frequency
FREQUENCY
(MHz)
INPUT
IMPEDANCE
S11
MAG
0.825
0.708
0.644
0.600
0.529
0.467
0.386
0.275
0.193
0.175
0.209
0.297
0.431
0.564
0.745
ANGLE
173.9
152.5
144.3
137.2
123.2
107.4
89.3
50
4.8 + j2.6
9.0 + j11.9
11.9 + j15.3
14.3 + j18.2
19.4 + j23.8
26.1 + j29.8
37.3 + j33.9
57.4 + j29.7
71.3 + j10.1
64.6 – j13.9
53.0 – j21.8
35.0 – j21.2
20.7 – j9.0
14.2 + j6.2
10.4 + j31.9
300
EXTERNAL
MATCHING
FOR LOW BAND
450
600
ONLY
L4
C4
TO
MIXER
900
LO
IN
1200
1500
1850
2150
2450
2650
3000
3500
4000
5000
LO
15
V
LIMITER
BIAS
60.6
20.6
V
CC2
–36.8
–70.3
–111.2
–155.8
164.8
113.3
5527 F05
Figure 5. LO Input Schematic
0
–5
L4 = 0nH
L4 = 6.8nH
C4 = 2.7pF
C4 = 10pF
–10
–15
–20
–25
–30
NO
EXTERNAL
MATCHING
LO Input Port
The mixer’s LO input, shown in Figure 5, consists of an
integratedtransformerandhighspeedlimitingdifferential
amplifiers. The amplifiers are designed to precisely drive
the mixer for the highest linearity and the lowest noise
figure. An internal DC blocking capacitor in series with the
transformer’s primary eliminates the need for an external
blocking capacitor.
L4 = 3.9nH
C4 = 5.6pF
0.1
1
5
LO FREQUENCY (GHz)
5527 F06
Figure 6. LO Input Return Loss
5527f
10
LT5527
W U U
APPLICATIO S I FOR ATIO
U
0dBmLOdriveisrecommendedforoptimumnoisefigure,
although –3dBm will still deliver good conversion gain
and linearity.
output impedance is listed in Table 3. This data is refer-
enced to the package pins (with no external components)
and includes the effects of IC and package parasitics. The
IF output can be matched for IF frequencies as low as
several kHz or as high as 600MHz.
Custom matching networks can be designed using the
port impedance data listed in Table 2. This data is refer-
enced to the LO pin with no external matching.
Table 3. IF Output Impedance vs Frequency
DIFFERENTIAL OUTPUT
Table 2. LO Input Impedance vs Frequency
FREQUENCY (MHz)
IMPEDANCE (R || X )
IF
IF
FREQUENCY
(MHz)
INPUT
S11
1
415||-j64k
IMPEDANCE
MAG
0.977
0.847
0.740
0.635
0.463
0.330
0.209
0.093
0.032
0.052
0.101
0.124
0.120
0.096
0.226
ANGLE
–15.9
–86.7
–124.8
–158.7
146.7
106.9
78.5
10
415||-j6.4k
415||-j909
413||-j453
407||-j264
403||-j211
395||-j165
387||-j138
381||-j124
50
30.4 – j355.7
8.7 – j52.2
9.4 – j25.4
11.5 – j8.9
19.7 + j12.8
34.3 + j24.3
49.8 + j21.3
53.8 + j8.9
50.4 + j3.2
45.1 + j0.3
41.1 + j2.4
41.9 + j8.1
49.0 + j12.0
55.4 + j8.6
33.2 + j8.7
70
300
140
240
300
380
450
500
450
600
900
1200
1500
1850
2150
2450
2650
3000
3500
4000
5000
61.7
80.5
176.5
163.1
129.8
87.9
The following three methods of differential to single-
ended IF matching will be described:
• Direct 8:1 transformer
• Lowpass matching + 4:1 transformer
• Discrete IF balun
53.2
146.7
IF Output Port
The IF outputs, IF+ and IF–, are internally connected to the
collectors of the mixer switching transistors (see Fig-
ure 7). Both pins must be biased at the supply voltage,
which can be applied through the center tap of a trans-
former or through matching inductors. Each IF pin draws
26mAofsupplycurrent(52mAtotal).Foroptimumsingle-
ended performance, these differential outputs should be
combined externally through an IF transformer or a
discrete IF balun circuit. The standard evaluation board
(see Figure 1) includes an IF transformer for impedance
transformation and differential to single-ended transfor-
mation. A second evaluation board (see Figure 2) realizes
the same functionality with a discrete IF balun circuit.
L1
L2
+
4:1
IF
IF
IF
OUT
11
10
50Ω
C3
V
CC
–
V
CC
5527 F07
Figure 7. IF Output with External Matching
0.7nH
2.5pF
+
–
IF
IF
11
10
R
S
415Ω
The IF output impedance can be modeled as 415Ω in
parallel with 2.5pF at low frequencies. An equivalent
small-signal model (including bondwire inductance) is
shown in Figure 8. Frequency-dependent differential IF
0.7nH
5527 F08
Figure 8. IF Output Small-Signal Model
5527f
11
LT5527
W U U
U
APPLICATIO S I FOR ATIO
Direct 8:1 IF Transformer Matching
chip inductors (L1 and L2) improve the mixer’s conver-
sion gain by a few tenths of a dB, but have little effect on
linearity. Measured output return losses for each case are
plotted in Figure 10 for the simple 8:1 transformer method
and for the lowpass/4:1 transformer method.
For IF frequencies below 100MHz, the simplest IF match-
ing technique is an 8:1 transformer connected across the
IF pins. The transformer will perform impedance transfor-
mation and provide a single-ended 50Ω output. No other
matching is required. Measured performance using this
technique is shown in Figure 9. This matching is easily
implemented on the standard evaluation board by short-
ing across the pads for L1 and L2 and replacing the 4:1
transformer with an 8:1 (C3 not installed).
Table 4. IF Matching Element Values
IF
FREQUENCY
(MHz)
L1, L2
(nH)
IF
PLOT
C3 (pF)
—
TRANSFORMER
1
2
3
4
5
6
1 to 100
140
Short
120
110
82
TC8-1 (8:1)
—
ETC4-1-2 (4:1)
ETC4-1-2 (4:1)
ETC4-1-2 (4:1)
ETC4-1-2 (4:1)
ETC4-1-2 (4:1)
25
190
2.7
23
IIP3
21
240
2.7
RF = 900MHz
380
56
2.2
19
17
15
13
11
9
HIGH SIDE LO AT 0dBm
V
= 5V DC
CC
A
450
43
2.2
T
= 25°C
C4 = 2.7pF, C5 = 3.9pF
SSB NF
0
–5
7
5
G
C
–10
3
1
–15
10 20 30 40 50 60 70 80 90 100
IF OUTPUT FREQUENCY (MHz)
5527 F09
–20
–25
–30
2
4
5
Figure 9. Typical Conversion Gain, IIP3 and
SSB NF Using an 8:1 IF Transformer
6
3
1
0
50 100 150 200 250 300 350 400 450 500
IF FREQUENCY (MHz)
Lowpass + 4:1 IF Transformer Matching
5527 F10
The lowest LO-IF leakage and wide IF bandwidth are
realizedbyusingthesimple,threeelementlowpassmatch-
ing network shown in Figure 7. Matching elements C3, L1
andL2, inconjunctionwiththeinternal2.5pFcapacitance,
form a 400Ω to 200Ω lowpass matching network which is
tuned to the desired IF frequency. The 4:1 transformer
then transforms the 200Ω differential output to a 50Ω
single-ended output.
Figure 10. IF Output Return Losses
with Lowpass/Transformer Matching
Discrete IF Balun Matching
For many applications, it is possible to replace the IF
transformer with the discrete IF balun shown in Figure 2.
The values of L1, L2, C6 and C7 are calculated to realize a
180 degree phase shift at the desired IF frequency and
provide a 50Ω single-ended output, using the equations
listed below. Inductor L3 is calculated to cancel the
internal2.5pFcapacitance.L3alsosuppliesbiasvoltageto
the IF+ pin. Low cost multilayer chip inductors are ad-
equate for L1 and L2. A high Q wire-wound chip inductor
is recommended for L3 to maximize conversion gain and
minimize DC voltage drop to the IF+ pin. C3 is a DC
This matching network is most suitable for IF frequencies
above 40MHz or so. Below 40MHz, the value of the series
inductors (L1 and L2) becomes unreasonably high, and
couldcausestabilityproblems, dependingontheinductor
value and parasitics. Therefore, the 8:1 transformer tech-
nique is recommended for low IF frequencies.
Suggested lowpass matching element values for several
IF frequencies are listed in Table 4. High-Q wire-wound
blocking capacitor.
5527f
12
LT5527
W U U
APPLICATIO S I FOR ATIO
U
0
RIF •ROUT
L1, L2 =
–5
ωIF
–10
–15
1
C6,C7 =
ωIF • RIF •ROUT
190MHz
240MHz
–20
–25
–30
XIF
L3 =
380MHz
ωIF
450MHz
Compared to the lowpass/4:1 transformer matching tech-
nique, this network delivers approximately 0.8dB higher
conversion gain (since the IF transformer loss is elimi-
nated) and comparable noise figure and IIP3. At a ±15%
offset from the IF center frequency, conversion gain and
noise figure degrade about 1dB. Beyond ±15%, conver-
sion gain decreases gradually but noise figure increases
rapidly. IIP3 is less sensitive to bandwidth. Other than IF
bandwidth, the most significant difference is LO-IF leak-
age,whichdegradestoapproximately–38dBmcompared
to the superior performance realized with the lowpass/4:1
transformer matching.
50 100 150 200 250 300 350 400 450 500 550
IF FREQUENCY (MHz)
5527 F11
Figure 11. IF Output Return Losses with Discrete Balun Matching
26
24
22
20
18
16
14
12
10
8
0
IIP3
–10
–20
–30
–40
–50
–60
190IF
240IF
380IF
450IF
LOW SIDE LO (–3dBm)
T
= 25°C
A
LO-IF
Discrete IF balun element values for four common IF
frequencies are listed in Table 5. The corresponding
measured IF output return losses are shown in Figure 11.
The values listed in Table 5 differ from the calculated
values slightly due to circuit board and component
parasitics. Typical conversion gain, IIP3 and LO-IF leak-
age, versus RF input frequency, for all four IF frequency
examples is shown in Figure 12. Typical conversion gain,
IIP3 and noise figure versus IF output frequency for the
same circuits are shown in Figure 13.
6
G
C
4
2
1700
1900
2100
2300
2500
2700
RF INPUT FREQUENCY (MHz)
5527 F12
Figure 12. Conversion Gain, IIP3 and LO-IF Leakage vs RF Input
Frequency Using Discrete IF Balun Matching
26
24
22
20
18
16
14
12
10
8
IIP3
LOW SIDE LO (–3dBm)
= 25°C
Table 5. Discrete IF Balun Element Values (R
= 50Ω)
OUT
T
A
IF FREQUENCY
(MHz)
L1, L2
(nH)
C6, C7
(pF)
L3
(nH)
190
240
380
450
120
100
56
6.8
4.7
3
220
220
68
SSB NF
190IF
240IF
380IF
450IF
6
4
2
G
C
47
2.7
47
0
350 400
150 200 250 300
450 500 550
For fully differential IF architectures, the IF transformer
can be eliminated. An example is shown in Figure 14,
wherethemixer’sIFoutputismatcheddirectlyintoaSAW
filter. Supply voltage to the mixer’s IF pins is applied
IF OUTPUT FREQUENCY (MHz)
5527 F13
Figure 13. Conversion Gain, IIP3 and SSB NF vs IF Output
Frequency Using Discrete IF Balun Matching
5527f
13
LT5527
W U U
U
APPLICATIO S I FOR ATIO
through matching inductors in a band-pass IF matching
network. The values of L1, L2 and C3 are calculated to
resonate at the desired IF frequency with a quality factor
that satisfies the required IF bandwidth. The L and C
values are then adjusted to account for the mixer’s
internal 2.5pF capacitance and the SAW filter’s input
capacitance. In this case, the differential IF output imped-
ance is 400Ω since the bandpass network does not
transform the impedance.
SAW
IF
FILTER
L1
L2
AMP
+
–
IF
IF
C3
5527 F14
V
CC
SUPPLY
DECOUPLING
Figure 14. Bandpass IF Matching for Differential IF Architectures
AdditionalmatchingelementsmayberequirediftheSAW
filter’s input impedance is less than or greater than 400Ω.
Contact the factory for application assistance.
Standard Evaluation Board Layout
Discrete IF Evaluation Board Layout
5527f
14
LT5527
U
PACKAGE DESCRIPTIO
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 ±0.05
4.35 ± 0.05
2.90 ± 0.05
2.15 ± 0.05
(4 SIDES)
PACKAGE OUTLINE
0.30 ±0.05
0.65 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
BOTTOM VIEW—EXPOSED PAD
PIN 1 NOTCH R = 0.20 TYP
OR 0.25 × 45° CHAMFER
0.75 ± 0.05
R = 0.115
TYP
4.00 ± 0.10
(4 SIDES)
15
16
0.55 ± 0.20
PIN 1
TOP MARK
(NOTE 6)
1
2
2.15 ± 0.10
(4-SIDES)
(UF) QFN 09-04
0.200 REF
0.30 ± 0.05
0.65 BSC
0.00 – 0.05
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
5527f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
15
LT5527
RELATED PARTS
PART NUMBER DESCRIPTION
COMMENTS
Infrastructure
LT5511
LT5512
LT5514
High Linearity Upconverting Mixer
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
DC-3GHz High Signal Level Downconverting Mixer DC to 3GHz, 17dBm IIP3, Integrated LO Buffer
Ultralow Distortion, IF Amplifier/ADC Driver
with Digitally Controlled Gain
850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range
LT5515
LT5516
1.5GHz to 2.5GHz Direct Conversion Quadrature
Demodulator
20dBm IIP3, Integrated LO Quadrature Generator
21.5dBm IIP3, Integrated LO Quadrature Generator
21dBm IIP3, Integrated LO Quadrature Generator
0.8GHz to 1.5GHz Direct Conversion Quadrature
Demodulator
LT5517
LT5519
40MHz to 900MHz Quadrature Demodulator
0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
LT5520
LT5521
LT5522
LT5524
1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
10MHz to 3700MHz High Linearity
Upconverting Mixer
24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended
LO Port Operation
400MHz to 2.7GHz High Signal Level
Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF
and LO Ports
Low Power, Low Distortion ADC Driver with Digitally 450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control
Programmable Gain
LT5525
LT5526
High Linearity, Low Power Downconverting Mixer
High Linearity, Low Power Downconverting Mixer
Single-Ended 50Ω RF and LO Ports, 17.6dBm IIP3 at 1900MHz, I = 28mA
CC
3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, I = 28mA,
CC
–65dBm LO-RF Leakage
LT5528
1.5GHz to 2.4GHz High Linearity Direct I/Q
Modulator
21.8dBm OIP3 at 2GHz, –159dBm/Hz Noise Floor, 50Ω Interface at all Ports
RF Power Detectors
LT5504
800MHz to 2.7GHz RF Measuring Receiver
80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply
300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply
100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply
44dB Dynamic Range, Temperature Compensated, SC70 Package
36dB Dynamic Range, Low Power Consumption, SC70 Package
LTC®5505
LTC5507
LTC5508
LTC5509
LTC5530
LTC5531
LTC5532
LT5534
RF Power Detectors with >40dB Dynamic Range
100kHz to 1000MHz RF Power Detector
300MHz to 7GHz RF Power Detector
300MHz to 3GHz RF Power Detector
300MHz to 7GHz Precision RF Power Detector
300MHz to 7GHz Precision RF Power Detector
300MHz to 7GHz Precision RF Power Detector
Precision V
Precision V
Precision V
Offset Control, Shutdown, Adjustable Gain
Offset Control, Shutdown, Adjustable Offset
Offset Control, Adjustable Gain and Offset
OUT
OUT
OUT
50MHz to 3GHz RF Power Detector with 60dB
Dynamic Range
±1dB Output Variation over Temperature, 38ns Response Time
LTC5536
Precision 600MHz to 7GHz RF Detector
with Fast Compatator Output
25ns Response Time, Comparator Reference Input, Latch Enable Input,
–26dBm to +12dBm Input Range
Low Voltage RF Building Block
LT5546 500MHz Quadrature Demodulator with VGA and
17MHz Baseband Bandwidth
Wide Bandwidth ADCs
17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V Supply, –7dB to
56dB Linear Power Gain
LTC1749
LTC1750
12-Bit, 80Msps
500MHz BW S/H, 71.8dB SNR
500MHz BW S/H, 75.5dB SNR
14-Bit, 80Msps
5527f
LT/TP 0305 500 • PRINTED IN THE USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
16
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(408) 432-1900 FAX: (408) 434-0507 www.linear.com
©LINEAR TECHNOLOGY CORPORATION 2005
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