LT5557 [Linear]
400MHz to 3.8GHz 3.3V High Signal Level Downconverting Mixer; 400MHz至3.8GHz的3.3V高信号电平下变频混频器型号: | LT5557 |
厂家: | Linear |
描述: | 400MHz to 3.8GHz 3.3V High Signal Level Downconverting Mixer |
文件: | 总16页 (文件大小:232K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LT5557
400MHz to 3.8GHz
3.3V High Signal Level
Downconverting Mixer
U
FEATURES
DESCRIPTIO
The LT®5557 active mixer is optimized for high linearity,
wide dynamic range downconverter applications. The IC
includes a high speed differential LO buffer amplifier
driving a double-balanced mixer. Broadband, integrated
transformers on the RF and LO inputs provide single-
ended 50Ω interfaces. The differential IF output allows
convenient interfacing to differential IF filters and amplifi-
ers, or is easily matched to drive a single-ended 50Ω load,
with or without an external transformer.
■
3.3V Operation for Reduced Power
■
50
Ω Single-Ended RF and LO Ports
■
■
Wide RF Frequency Range: 400MHz to 3.8GHz*
High Input IP3: 25.6dBm at 900MHz
24.7dBm at 1950MHz
23.7dBm at 2.6GHz
■
Conversion Gain: 3.3dB at 900MHz
2.9dB at 1950MHz
–3dBm LO Drive Level
Low LO Leakage
Low Noise Figure: 10.6dB at 900MHz
11.7dB at 1950MHz
Very Few External Components
16-Lead (4mm ×U4mm) QFN Package
■
■
■
The RF input is internally matched to 50Ω from 1.6GHz to
2.3GHz, and the LO input is internally matched to 50Ω
from 1GHz to 5GHz. The frequency range of both ports is
easily extended with simple external matching. The IF
output is partially matched and usable for IF frequencies
up to 600MHz.
■
■
APPLICATIO S
The LT5557’s high level of integration minimizes the total
solution cost, board space and system-level variation.
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
*Operation over a wider frequency range is possible with reduced performance. Consult factory for
information and assistance.
■
Cellular, CDMA, WCDMA, TD-SCDMA and UMTS
Infrastructure
WiMAX
Wireless Infrastructure Receiver
Wireless Infrastructure PA Linearization
900MHz/2.4GHz/3.5GHz WLAN
■
■
■
■
U
TYPICAL APPLICATIO
High Signal Level Downmixer for Multi-Carrier Wireless Infrastructure
Conversion Gain, IIP3, SSB NF and
LO Leakage vs RF Frequency
LO INPUT
–3dBm (TYP)
26
24
22
20
18
16
14
0
IIP3
LT5557
10
20
30
LOW-SIDE LO
IF = 240MHz
4.7pF
P
= –3dBm
LO
T
= 25°C
A
+
–
100nH
V
CC
= 3.3V
IF
IF
SSB NF
1nF
12
10
8
IF
150nH
100nH
OUTPUT
240MHz
40
4.7pF
RF
RF
INPUT
LO-IF
LO-RF
6
50
60
BIAS
EN
4
G
C
V
V
CC1
GND
CC2
2
1700
1900
2000
2100
2200
1800
3.3V
1nF
1μF
RF FREQUENCY (MHz)
5557 TA01a
5557 TA01b
5557fa
1
LT5557
W W
U W
U W
U
ABSOLUTE AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
(Note 1)
TOP VIEW
Supply Voltage (VCC1, VCC2, IF+, IF–) ......................... 4V
Enable Voltage ............................... –0.3V to VCC + 0.3V
LO Input Power (380MHz to 4.2GHz) ............... +10dBm
LO Input DC Voltage ............................ –1V to VCC + 1V
RF Input Power (400MHz to 3.8GHz) ............... +12dBm
RF Input DC Voltage ............................................ 0.1V
Operating Temperature Range ............... –40°C to 85°C
Storage Temperature Range ................ –65°C to 125°C
Junction Temperature (TJ)................................... 125°C
ORDER PART
NUMBER
16 15 14 13
NC
NC
RF
NC
1
2
3
4
12 GND
+
LT5557EUF#PBF
11 IF
17
–
IF
10
9
GND
5
6
7
8
UF PART MARKING
5557
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
TJMAX = 125°C, θJA = 37°C/W
EXPOSED PAD (PIN 17) IS GND
MUST BE SOLDERED TO PCB
CAUTION: This part is sensitive to electrostatic discharge
(ESD). It is very important that proper ESD precautions be
observed when handling the LT5557.
Order Options Tape and Reel: Add #TR
Lead Free Part Marking: http://www.linear.com/leadfree/
Consult LTC Marketing for parts specified with wider operating temperature ranges.
DC ELECTRICAL CHARACTERISTICS
VCC = 3.3V, EN = High, TA = 25°C, unless otherwise specified. Test circuit shown in Figure 1. (Note 3)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Power Supply Requirements (V
Supply Voltage
)
CC
2.9
3.3
3.9
V
Supply Current
V
V
(Pin 7)
25.1
3.3
53.2
81.6
mA
mA
mA
mA
CC1
(Pin 6)
CC2
+
–
IF + IF (Pin 11 + Pin 10)
Total Supply Current
60
92
Enable (EN) Low = Off, High = On
Shutdown Current
EN = Low
100
μA
V
Input High Voltage (On)
Input Low Voltage (Off)
EN Pin Input Current
Turn-ON Time
2.7
0.3
90
V
EN = 3.3V DC
53
2.8
2.9
μA
μs
μs
Turn-OFF Time
AC ELECTRICAL CHARACTERISTICS
Test circuit shown in Figure 1. (Notes 2, 3)
MIN
PARAMETER
CONDITIONS
TYP
MAX
UNITS
RF Input Frequency Range
No External Matching (Midband)
With External Matching (Low Band or High Band)
1600 to 2300
MHz
MHz
400
380
3800
LO Input Frequency Range
No External Matching
With External Matching
1000 to 4200
MHz
MHz
IF Output Frequency Range
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
LO Input Power
Requires Appropriate IF Matching
0.1 to 600
>12
MHz
dB
Z = 50Ω, 1600MHz to 2300MHz (No External Matching)
O
Z = 50Ω, 1000MHz to 5000MHz (No External Matching)
>10
dB
O
Differential at 240MHz
529Ω||2.6pF
R||C
1200MHz to 4200MHz
380MHz to 1200MHz
–8
–5
–3
0
2
5
dBm
dBm
5557fa
2
LT5557
AC ELECTRICAL CHARACTERISTICS
IF output measured at 240MHz, unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4)
Standard Downmixer Application: VCC = 3.3V, EN = High, TA = 25°C,
PRF = –6dBm (–6dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), fLO = fRF – fIF, PLO = –3dBm (0dBm for 450MHz and 900MHz tests),
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Gain
RF = 450MHz, IF = 70MHz, High Side LO
RF = 900MHz, IF = 140MHz
RF = 1750MHz
RF = 1950MHz
RF = 2150MHz
2.9
3.3
3.0
2.9
2.9
2.5
1.7
dB
dB
dB
dB
dB
dB
dB
RF = 2600MHz, IF = 360MHz
RF = 3600MHz, IF = 450MHz
Conversion Gain vs Temperature
Input 3rd Order Intercept
T = –40°C to 85°C, RF = 1950MHz
–0.0217
dB/°C
A
RF = 450MHz, IF = 70MHz, High Side LO
RF = 900MHz, IF = 140MHz
RF = 1750MHz
RF = 1950MHz
RF = 2150MHz
RF = 2600MHz, IF = 360MHz
RF = 3600MHz, IF = 450MHz
24.1
25.6
25.5
24.7
24.3
23.7
23.5
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Single-Sideband Noise Figure
RF = 450MHz, IF = 70MHz, High Side LO
RF = 900MHz, IF = 140MHz
RF = 1750MHz
RF = 1950MHz
RF = 2150MHz
12.7
10.6
11.3
11.7
12.8
13.2
15.4
dB
dB
dB
dB
dB
dB
dB
RF = 2600MHz, IF = 360MHz
RF = 3600MHz, IF = 450MHz
LO to RF Leakage
f
f
= 380MHz to 1600MHz
= 1600MHz to 4000MHz
<–50
<–45
dBm
dBm
LO
LO
LO to IF Leakage
f
f
= 380MHz to 2200MHz
= 2200MHz to 4000MHz
<–42
<–38
dBm
dBm
LO
LO
RF to LO Isolation
f
f
= 400MHz to 1700MHz
= 1700MHz to 3800MHz
>50
>42
dB
dB
RF
RF
RF to IF Isolation
f
f
= 400MHz to 2300MHz
= 2300MHz to 3800MHz
>41
>37
dB
dB
RF
RF
2RF-2LO Output Spurious Product
900MHz: f = 830MHz at –6dBm, f = 140MHz
–61
–53
dBc
dBc
RF
IF
(f = f + f /2)
1950MHz: f = 1830MHz at –6dBm, f = 240MHz
RF
LO
IF
RF IF
3RF-3LO Output Spurious Product
(f = f + f /3)
900MHz: f = 806.67MHz at –6dBm, f = 140MHz
–83
–70
dBc
dBc
RF
IF
1950MHz: f = 1790MHz at –6dBm, f = 240MHz
RF
LO
IF
RF
IF
Input 1dB Compression
RF = 450MHz, IF = 70MHz, High Side LO
RF = 900MHz, IF = 140MHz
RF = 1950MHz
RF = 2600MHz, IF = 360MHz
RF = 3600MHz, IF = 450MHz
10.0
8.8
8.8
8.6
9.1
dBm
dBm
dBm
dBm
dBm
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 3: Specifications over the –40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
Note 4: SSB Noise Figure measurements performed with a small-signal
noise source and bandpass filter on RF input, and no other RF signal
applied.
Note 2: 450MHz and 900MHz performance measured with external LO and
RF matching. 2600MHz and 3600MHz performance measured with
external RF matching. See Figure 1 and Applications Information.
5557fa
3
LT5557
U W
VCC = 3.3V, Test circuit shown in Figure 1.
TYPICAL PERFOR A CE CHARACTERISTICS
Midband (No external RF/LO matching) 240MHz IF output, PRF = –6dBm (–6dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), PLO = –3dBm,
unless otherwise noted.
Conversion Gain, IIP3 and NF
vs RF Frequency
LO Leakage and RF Isolation vs
LO and RF Frequency
Supply Current vs Supply Voltage
26
24
22
20
18
16
14
12
10
8
–20
–30
–40
–50
–60
55
45
35
25
15
87
86
85
84
83
82
81
80
79
78
77
IIP3
85°C
LOW-SIDE LO
HIGH-SIDE LO
RF-LO
RF-IF
60°C
25°C
LO-IF
SSB NF
–10°C
–40°C
T
= 25°C
6
A
LO-RF
IF = 240MHz
T
= 25°C
G
C
A
4
P
= –3dBm
LO
2.4
LO/RF FREQUENCY (GHz)
2
1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3
1.2
1.5
1.8
2.1
2.7
2.9
3.1
3.3
3.5
3.7
3.9
RF FREQUENCY (GHz)
SUPPLY VOLTAGE (V)
5557 G01
5557 G02
5557 G03
Conversion Gain and IIP3
vs Temperature (Low-Side LO)
Conversion Gain and IIP3
vs Temperature (High-Side LO)
1950MHz Conversion Gain, IIP3
and NF vs Supply Voltage
27
27
25
23
21
19
17
15
13
11
9
26
24
22
20
18
16
14
12
10
8
IIP3
25
23
21
19
17
15
13
11
9
IIP3
IIP3
–40°C
25°C
85°C
1750MHz
1950MHz
2150MHz
1750MHz
1950MHz
2150MHz
SSB NF
IF = 240MHz
IF = 240MHz
LOW-SIDE LO
IF = 240MHz
7
5
7
5
6
4
G
C
G
C
G
C
3
3
2
1
1
0
–50
–25
0
25
50
75
100
–50
–25
0
25
50
75
100
2.9
3.1
3.5
SUPPLY VOLTAGE (V)
3.7
3.9
3.3
TEMPERATURE (°C)
TEMPERATURE (°C)
5557 G04
5557 G05
5557 G06
1750MHz Conversion Gain, IIP3
and NF vs LO Power
1950MHz Conversion Gain, IIP3
and NF vs LO Power
2150MHz Conversion Gain, IIP3
and NF vs LO Power
26
24
22
20
18
16
14
12
10
8
26
24
22
20
18
16
14
12
10
8
27
25
23
21
19
17
15
13
11
9
IIP3
IIP3
IIP3
–40°C
25°C
85°C
–40°C
25°C
85°C
–40°C
25°C
85°C
SSB NF
SSB NF
SSB NF
LOW-SIDE LO
IF = 240MHz
LOW-SIDE LO
IF = 240MHz
LOW-SIDE LO
IF = 240MHz
6
4
6
4
7
5
G
G
C
C
G
C
2
2
3
0
0
1
–9
–7
–5
–3
–1
1
3
–9
–7
–5
–3
–1
1
3
–9
–7
–5
–3
–1
1
3
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
5557 G08
5557 G09
5557 G07
5557fa
4
LT5557
U W
VCC = 3.3V, Test circuit shown in Figure 1.
Midband (No external RF/LO matching) 240MHz IF output, PRF = –6dBm (–6dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), PLO = –3dBm,
TYPICAL PERFOR A CE CHARACTERISTICS
unless otherwise noted.
IF Output Power, IM3 and IM5 vs
RF Input Power (2 Input Tones)
IFOUT, 2 × 2 and 3 × 3 Spurs
2 × 2 and 3 × 3 Spurs
vs RF Input Power (Single Tone)
vs LO Power (Single Tone)
10
0
15
5
–40
–45
–50
–55
T
= 25°C
IF
A
OUT
LO = 1710MHz
IF = 240MHz
(RF = 1950MHz)
IF
OUT
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
–5
P
= –6dBm
T
= 25°C
RF
A
–15
–25
–35
–45
–55
–65
–75
–85
–95
LO = 1710MHz
IF = 240MHz
2RF-2LO
(RF = 1830MHz)
T
A
= 25°C
RF1 = 1949.5MHz
RF2 = 1950.5MHz
LO = 1710MHz
–60
–65
2RF-2LO
(RF = 1830MHz)
–70
–75
–80
3RF-3LO
(RF = 1790MHz)
3RF-3LO
(RF = 1790MHz)
IM3
–15
RF INPUT POWER (dBm/TONE)
IM5
–18
–12
–9
–6
–3
0
–9
–7
–5
–1
1
3
–15
–9 –6 –3
0
3
6
9
12
–3
–12
RF INPUT POWER (dBm)
LO INPUT POWER (dBm)
5557 G10
5557 G12
5557 G11
Conversion Gain Distribution at
1950MHz
SSB Noise Figure Distribution at
1950MHz
IIP3 Distribution at 1950MHz
35
30
30
27
24
21
18
15
12
9
40
35
30
25
20
15
10
5
85°C
T
= 25°C
T
= 25°C
A
A
25°C
LOW-SIDE LO
IF = 240MHz
LOW-SIDE LO
IF = 240MHz
–40°C
25
LOW-SIDE LO
IF = 240MHz
20
15
10
5
6
3
0
0
0
23
26
25
IIP3 (dBm)
28
24
27
11.0 11.2 11.4 11.6 11.8 12.0 12.2
2.9
CONVERSION GAIN (dB)
2.6
2.7
2.8
3.0
3.1
3.2
SSB NOISE FIGURE (dB)
5557 G26
5557 G27
5557 G25
450MHz application (with external RF/LO matching) 70MHz IF output, PRF = –6dBm (–6dBm/tone for 2-tone IIP3 tests,
Δf = 1MHz), high-side LO at 0dBm, unless otherwise noted.
Conversion Gain, IIP3 and NF
vs RF Frequency
450MHz Conversion Gain,
IIP3 and NF vs LO Power
LO Leakage vs LO Frequency
450MHz and 900MHz Applications
25
23
21
19
17
15
13
11
9
–35
–40
–45
–50
–55
–60
26
24
22
20
18
16
14
12
10
8
T
= 25°C
LO
LO-RF
LO-IF
A
IIP3
P
= 0dBm
IIP3
–40°C
25°C
85°C
HIGH-SIDE LO
= 25°C
T
A
IF = 70MHz
SSB NF
SSB NF
900MHz
APPLICATION
HIGH-SIDE LO
IF = 70MHz
7
G
C
5
6
450MHz
APPLICATION
3
4
G
C
1
2
600
800
1000
400
1200
2
4
6
400
450
475
500
–6
–4
–2
0
425
LO FREQUENCY (MHz)
LO INPUT POWER (dBm)
RF FREQUENCY (MHz)
5557 G15
5557 G14
5557 G13
5557fa
5
LT5557
U W
VCC = 3.3V, Test circuit shown in Figure 1.
TYPICAL PERFOR A CE CHARACTERISTICS
900MHz application (with external RF/LO matching), 140MHz IF output, PRF = –6dBm (–6dBm/tone for 2-tone IIP3 tests, Δf = 1MHz),
low-side LO at 0dBm, unless otherwise noted.
900MHz Conversion Gain, IIP3 and
NF vs LO Power
IFOUT, 2 × 2 and 3 × 3 Spurs
Conversion Gain, IIP3 and NF vs
RF Frequency
vs RF Input Power (Single-Tone)
15
5
28
26
24
22
20
18
16
14
12
10
8
27
25
23
21
19
17
15
13
11
9
IIP3
IIP3
–5
T
= 25°C
A
IF
OUT
–15
–25
–35
–45
–55
–65
–75
–85
–95
LO = 760MHz
IF = 140MHz
LOW-SIDE LO
–40°C
25°C
85°C
(RF = 900MHz)
T
= 25°C
A
IF = 140MHz
SSB NF
2RF-2LO
(RF = 830MHz)
SSB NF
LOW-SIDE LO
IF = 140MHz
7
5
3
1
G
C
6
4
2
3RF-3LO
(RF = 806.67MHz)
G
C
–15 –12 –9 –6 –3
0
3
6
9
12
750
800
850
900
950 1000 1050
RF INPUT POWER (dBm)
RF FREQUENCY (MHz)
LO INPUT POWER (dBm)
5557 G18
5557 G16
5557 G17
2.3-2.7GHz application (with external RF matching) 360MHz IF output, PRF = –6dBm (–6dBm/tone for 2-tone IIP3 tests, Δf = 1MHz),
PLO = –3dBm, unless otherwise noted.
LO Leakage and RF Isolation vs
LO and RF Frequency
Conversion Gain, IIP3 and SSB
NF vs RF Frequency
2.6GHz Conversion Gain, IIP3 and
NF vs LO Power
–20
–30
–40
–50
45
35
25
15
26
24
22
20
18
16
14
12
10
8
26
24
22
20
18
16
14
12
10
8
RF-LO
RF-IF
IIP3
IIP3
LOW-SIDE LO
HIGH-SIDE LO
–40°C
25°C
85°C
SSB NF
SSB NF
LO-RF
LO-IF
LOW-SIDE LO
T
A
= 25°C
6
4
6
4
G
C
G
C
2
2
–60
5
0
0
1.9
2.1
2.3
2.5
2.7
2.9
3.1
2.3
2.4
2.5
2.6
2.7
–9
–7
–5
–3
–1
1
3
LO/RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
LO INPUT POWER (dBm)
5557 G21
5557 G19
5557 G20
3.3-3.8GHz application (with external RF matching) 450MHz IF output, PRF = –6dBm (–6dBm/tone for 2-tone IIP3 tests, Δf = 1MHz),
low-side LO at –3dBm, unless otherwise noted.
Conversion Gain, IIP3 and SSB NF
vs RF Frequency
3.6GHz Conversion Gain, IIP3 and
SSB NF vs LO Power
LO Leakage and RF Isolation vs LO
and RF Frequency
24
22
20
18
16
14
12
10
8
–30
–40
–50
–60
–70
55
24
22
20
18
16
14
12
10
8
IIP3
IIP3
RF-LO
45
SSB NF
RF-IF
SSB NF
35
–40°C
25°C
85°C
LO-IF
LO-RF
6
25
6
T
= 25°C
A
4
G
C
4
G
C
2
2
0
15
0
2.8
3.0
3.2
3.4
3.6
3.8
–9
–5
–3
–1
1
3
–7
3.3
3.5
3.6
3.7
3.8
3.4
LO INPUT POWER (dBm)
LO/RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
5557 G24
5557 G23
5557 G22
5557fa
6
LT5557
U
U
U
PI FU CTIO S
NC(Pins 1, 2, 4, 8, 13, 14, 16): Not Connected Internally.
Thesepinsshouldbegroundedonthecircuitboardforthe
best LO-to-RF and LO-to-IF isolation.
be externally connected to the VCC2 pin and decoupled
with 1000pF and 1μF capacitors.
GND (Pins 9, 12): Ground. These pins are internally
connected to the backside ground for improved isolation.
They should be connected to the RF ground on the circuit
board, although they are not intended to replace the
primary grounding through the backside contact of the
package.
IF–, IF+ (Pins 10, 11): Differential Outputs for the IF
Signal. An impedance transformation may be required to
match the outputs. These pins must be connected to VCC
through impedance matching inductors, RF chokes or a
transformer center tap. Typical current consumption is
26.6mA each (53.2mA total).
RF (Pin 3): Single-Ended Input for the RF Signal. This pin
is internally connected to the primary side of the RF input
transformer,whichhaslowDCresistancetoground.Ifthe
RF source is not DC blocked, then a series blocking
capacitormustbeused.TheRFinputisinternallymatched
from 1.6GHz to 2.3GHz. Operation down to 400MHz or up
to 3.8GHz is possible with simple external matching.
EN (Pin 5): Enable Pin. When the input enable voltage is
higher than 2.7V, the mixer circuits supplied through Pins
6, 7, 10 and 11 are enabled. When the input voltage is less
than 0.3V, all circuits are disabled. Typical input current is
53μA for EN = 3.3V and 0μA when EN = 0V. The EN pin
should not be left floating. Under no conditions should the
EN pin voltage exceed VCC + 0.3V, even at start-up.
LO (Pin 15): Single-Ended Input for the Local Oscillator
Signal. This pin is internally connected to the primary side
of the LO transformer, which is internally DC blocked. An
external blocking capacitor is not required. The LO input is
internallymatchedfrom1GHzto5GHz. Operationdownto
380MHz is possible with simple external matching.
VCC2 (Pin 6): Power Supply Pin for the Bias Circuits.
Typical current consumption is 3.3mA. This pin should be
externally connected to the VCC1 pin and decoupled with
1000pF and 1μF capacitors.
Exposed Pad (Pin 17): Circuit Ground Return for the
EntireIC.Thismustbesolderedtotheprintedcircuitboard
ground plane.
VCC1 (Pin 7): Power Supply Pin for the LO Buffer Circuits.
Typical current consumption is 25.1mA. This pin should
W
BLOCK DIAGRA
15
LO
REGULATOR
EXPOSED
17
PAD
LIMITING
AMPLIFIERS
V
REF
12
11
GND
V
+
CC1
IF
–
RF
IF
3
10
9
DOUBLE-BALANCED
MIXER
GND
BIAS
EN
V
V
CC1
CC2
5
6
7
5557 BD
5557fa
7
LT5557
TEST CIRCUITS
LO
IN
L4
C4
RF
GND
εR = 3.7
0.015"
0.062"
0.015"
DC1131A
BOARD
BIAS
GND
STACK-UP
(NELCO N4000-13)
16
15 14
13
EXTERNAL MATCHING
FOR LO BELOW 1GHz
NC LO NC NC
1
2
12
11
T1
NC
NC
GND
+
3
2
1
4
6
IF
Z
O
C3
LT5557
L1
RF
IN
50Ω
3
4
10
9
IF
–
OUT
IF
GND
NC
RF
240MHz
•
•
L (mm)
C5
NC
EN
V
V
CC2 CC1
LOW-PASS MATCH
FOR 450MHz, 900MHz
AND 3.6GHz RF
5
6
7
8
EN
C5
3.9pF
V
CC
(2.9V to 3.9V)
RF
IN
C1
C2
L5
3.6nH
5557 F01
*HIGH-PASS MATCH
FOR 2.6GHz RF
APPLICATION
LO
RF MATCH
LO MATCH
IF MATCH
L1 C3
RF
IF
L
C5
L4
C4
450MHz High Side 70MHz 6.5mm
900MHz Low Side 140MHz 1.7mm
12pF
10nH
8.2pF
270nH
15pF
3.9pF
2.7nH
3.9pF
180nH
47nH
39nH
3.9pF
1.2pF
–
2.6GHz
3.6GHz
360MHz
HIGH-PASS*
–
–
–
–
450MHz 2.9mm
1pF
REF DES
C1
VALUE
SIZE
0402
0603
0402
PART NUMBER
REF DES
L4, C4, C5
L1
VALUE
SIZE
PART NUMBER
1000pF
1μF
AVX 04025C102JAT
0402
0603
See Applications Information
Toko LLQ1608-F82NG
Mini-Circuits TC8-1+
C2
AVX 0603ZD105KAT
AVX 04025A2R2BAT
82nH
8:1
C3
2.2pF
T1
Figure 1. Standard Downmixer Test Schematic—Transformer-Based Bandpass IF Matching (240MHz IF)
LO
RF
GND
IN
L4
C4
εR = 4.4
0.018"
0.062"
DC910A
BOARD
STACK-UP
(FR-4)
DISCRETE
IF BALUN
BIAS
GND
0.018"
16
15 14
13
EXTERNAL MATCHING
FOR LO BELOW 1GHz
NC LO NC NC
1
2
12
11
C6
L1
NC
NC
GND
+
IF
C3
IF
OUT
240MHz
Z
O
L3
LT5557
RF
IN
50Ω
C7
3
4
10
9
–
IF
GND
NC
RF
L (mm)
C5
NC
L2
EN
V
V
CC2 CC1
LOW-PASS MATCH
FOR 450MHz, 900MHz
AND 3.6GHz RF
5
6
7
8
EN
V
(2.9V to 3.9V)
CC
C1
C2
5557 F02
REF DES
C1, C3
C2
VALUE
SIZE
0402
0603
0402
PART NUMBER
REF DES
VALUE
SIZE
PART NUMBER
1000pF
1μF
AVX 04025C102JAT
AVX 0603ZD105KAT
AVX 04025A4R7CAT
L4, C4, C5
L1, L2
L3
0402
0603
0603
See Applications Information
Toko LL1608-FSLR10J
Toko LL1608-FSLR15J
100nH
150nH
C6, C7
4.7pF
Figure 2. Downmixer Test Schematic—Discrete IF Balun Matching (240MHz IF)
5557fa
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LT5557
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APPLICATIO S I FOR ATIO
U
Introduction
band edge can be optimized with a series 3.9pF capacitor
at Pin 3, which improves the 1.6GHz return loss to greater
than 25dB. Likewise, the 2.3GHz match can be improved
to greater than 25dB with a series 1.5nH inductor. A series
2.7nH/2.2pFnetworkwillsimultaneouslyoptimizethelower
and upper band edges and expand the RF input bandwidth
to 1.2GHz-2.5GHz. Measured RF input return losses for
these three cases are also plotted in Figure 4a.
The LT5557 consists of a high linearity double-balanced
mixer, RF buffer amplifier, high speed limiting LO buffer
amplifier and bias/enable circuits. The RF and LO inputs
are both single ended. The IF output is differential. Low
side or high side LO injection can be used.
Two evaluation circuits are available. The standard evalu-
ationcircuit, showninFigure1, incorporatestransformer-
based IF matching and is intended for applications that
require the highest dynamic range and the widest IF
bandwidth. The second evaluation circuit, shown in Fig-
ure 2, replaces the IF transformer with a discrete IF balun
for reduced solution cost and size. The discrete IF balun
delivershigherconversiongain,butslightlydegradedIIP3
and noise figure, and reduced IF bandwidth.
Alternatively, the input match can be shifted as low as
400MHzorupto3800MHzbyaddingashuntcapacitor(C5)
to the RF input. A 450MHz input match is realized with C5
= 12pF, located 6.5mm away from Pin 3 on the evaluation
board’s50Ωinputtransmissionline.A900MHzinputmatch
requires C5 = 3.9pF, located at 1.7mm. A 3.6GHz input
match is realized with C5 = 1pF, located at 2.9mm. This
0
NO EXT MATCH
–5
RF Input Port
The mixer’s RF input, shown in Figure 3, consists of an
integrated transformer and a high linearity differential
amplifier. The primary terminals of the transformer are
connectedtotheRFinput(Pin3)andground. Thesecond-
ary side of the transformer is internally connected to the
amplifier’s differential inputs. The DC resistance of the
primaryis4.2Ω. IftheRFsourcehasDCvoltagepresent,
thenacouplingcapacitormustbeusedinserieswiththe
RF input pin.
–10
–15
–20
SERIES 2.7nH
AND 2.2pF
–25
SERIES 3.9pF
SERIES 1.5nH
–30
2.7 3.2
FREQUENCY (GHz)
0.2 0.7 1.2 1.7 2.2
3.7 4.2
5557 F04a
TheRFinputisinternallymatchedfrom1.6GHzto2.3GHz,
requiring no external components over this frequency
range. The input return loss, shown in Figure 4a, is typi-
cally 12dB at the band edges. The input match at the lower
(4a) Series Reactance Matching
0
–5
–10
–15
–20
–25
–30
LOW-PASS MATCH
FOR 450MHz, 900MHz
and 3.6GHz RF
3.6GHz
L = 2.9mm
C5 = 1pF
TO
MIXER
NO EXT
Z
= 50Ω
O
MATCH
RF
RF
IN
IN
450MHz
L = 6.5mm
C5 = 12pF
900MHz
L = 1.7mm
C5 = 3.9pF
L = L (mm)
RF
3
C5
2.6GHz
SERIES 3.9pF
SHUNT 3.6nH
5557 F03
C5
2.7 3.2
FREQUENCY (GHz)
0.2 0.7 1.2 1.7 2.2
3.7 4.2
HIGH-PASS MATCH
FOR 2.6GHz RF
AND WIDEBAND RF
5557 F04b
L5
(4b) Series Shunt Matching
Figure 4. RF Input Return Loss With
and Without External Matching
Figure 3. RF Input Schematic
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9
LT5557
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APPLICATIO S I FOR ATIO
series transmission line/shunt capacitor matching topol-
ogy allows the LT5557 to be used for multiple frequency
standards without circuit board layout modifications. The
series transmission line can also be replaced with a series
chip inductor for a more compact layout.
LO Input Port
The mixer’s LO input, shown in Figure 5, consists of an
integratedtransformerandhighspeedlimitingdifferential
amplifiers. The amplifiers are designed to precisely drive
the mixer for the highest linearity and the lowest noise
figure. An internal DC blocking capacitor in series with the
transformer’s primary eliminates the need for an external
blocking capacitor.
Input return losses for the 450MHz, 900MHz, 2.6GHz and
3.6GHz applications are plotted in Figure 4b. The input
return loss with no external matching is repeated in Figure
4b for comparison. The 2.6GHz RF input match uses the
high-pass matching network shown in Figures 1 and 3
with C5 = 3.9pF and L5 = 3.6nH. The high-pass input
matching network is also used to create a wideband or
dual-band input match. For example, with C5 = 3.3pF and
L5 = 10nH, the RF input is matched from 800MHz to
2.2GHz, with optimum matching in the 800MHz to 1.1GHz
and 1.6GHz to 2.2GHz bands, simultaneously.
The LO input is internally matched from 1 to 5GHz. The
input match can be shifted down, as low as 750MHz, with
a single shunt capacitor (C4) on Pin 15. One example is
plotted in Figure 6 where C4 = 2.7pF produces a 750MHz
to 1GHz match.
LO input matching below 750MHz requires the series
inductor (L4)/shunt capacitor (C4) network shown in
Figure 5. Two examples are plotted in Figure 6 where L4 =
2.7nH/C4 = 3.9pF produces a 650MHz to 830MHz match
and L4 = 10nH/C4 = 8.2pF produces a 460MHz to 560MHz
match. The evaluation boards do not include pads for L4,
so the circuit trace needs to be cut near Pin 15 to insert L4.
A low cost multilayer chip inductor is adequate for L4.
RF input impedance and S11 versus frequency (with no
external matching) are listed in Table 1 and referenced to
Pin 3. The S11 data can be used with a microwave circuit
simulator to design custom matching networks and simu-
late board-level interfacing to the RF input filter.
Table 1. RF Input Impedance vs Frequency
EXTERNAL
MATCHING
FREQUENCY
(MHz)
INPUT
IMPEDANCE
S11
MAG
0.832
0.706
0.639
0.588
0.506
0.380
0.229
0.163
0.184
0.274
0.374
0.481
0.568
0.645
0.700
ANGLE
174.7
153.8
145.8
138.7
123.4
97.5
FOR LO < 1GHz
TO
MIXER
50
4.6 + j2.3
9.1 + j11.2
12.0 + j14.5
14.7 + j17.4
20.5 + j23.3
34.4 + j30.3
59.6 + j23.8
69.2 + j2.8
59.2 – j18.1
41.5 – j24.5
28.3 – j21.3
19.0 – j13.5
13.9 – j5.1
10.8 + j3.4
9.4 + j12.3
LO
IN
L4
C4
LO
300
15
LIMITER
450
600
REGULATOR
V
REF
V
CC2
900
5557 F05
1300
1700
1950
2200
2450
2700
3000
3300
3600
3900
Figure 5. LO Input Schematic
55.8
6.9
0
–10
–20
–30
–53.5
–94.2
–120.3
–145.5
–167.3
171.9
151.4
NO EXT
MATCH
L4 = 10nH
C4 = 8.2pF
L4 = 2.7nH
L4 = 0
C4 = 3.9pF
C4 = 2.7pF
0.3
1
5
LO FREQUENCY (GHz)
5557 G06
Figure 6. LO Input Return Loss
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LT5557
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APPLICATIO S I FOR ATIO
U
The optimum LO drive is –3dBm for LO frequencies above
1.2GHz, although the amplifiers are designed to accom-
modate several dB of LO input power variation without
significant mixer performance variation. Below 1.2GHz,
0dBmLOdriveisrecommendedforoptimumnoisefigure,
although –3dBm will still deliver good conversion gain
and linearity.
The IF output impedance can be modeled as 560Ω in
parallel with 2.6pF at low frequencies. An equivalent
small-signal model (including bondwire inductance) is
shown in Figure 8. Frequency-dependent differential IF
output impedance is listed in Table 3. This data is refer-
enced to the package pins (with no external components)
and includes the effects of IC and package parasitics. The
IF output can be matched for IF frequencies as low as
several kHz or as high as 600MHz.
Custom matching networks can be designed using the
port impedance data listed in Table 2. This data is refer-
enced to the LO pin with no external matching.
Table 3. IF Output Impedance vs Frequency
DIFFERENTIAL OUTPUT
Table 2. LO Input Impedance vs Frequency
FREQUENCY (MHz)
IMPEDANCE (R || X )
IF IF
FREQUENCY
(MHz)
INPUT
IMPEDANCE
S11
1
560 || – j63.7k (2.6pF)
556 || – j870 (2.6pF)
551 || – j440 (2.6pF)
523 || – j320 (2.6pF)
529 || – j254 (2.6pF)
509 || – j200 (2.66pF)
483 || – j163 (2.7pF)
448 || – j125 (2.83pF)
396 || – j92 (2.88pF)
MAG
0.991
0.820
0.632
0.474
0.350
0.241
0.196
0.167
0.102
0.039
0.143
0.263
0.290
0.154
0.271
ANGLE
–17.4
–99.2
–155.9
151.8
100.8
31.3
70
50
10.0 – j326
8.5 – j41.9
11.8 – j10.1
18.8 + j10.9
35.0 + j27.4
72.9 + j19.3
70.0 – j12.6
55.0 – j17.0
47.8 – j9.7
53.6 – j1.9
66.7 + j0.7
82.1 – j13.9
69.0 – j30.1
43.7 – j13.2
36.4 + j19.8
140
190
240
300
360
450
600
300
500
700
900
1200
1500
1800
2200
2600
3000
3500
4000
4500
5000
–26.1
–64.3
–97.2
–26.8
2.1
Two methods of differential to single-ended IF matching
are described:
–17.4
–43.5
–107.5
111.6
• Transformer - Based Bandpass
• Discrete IF balun
+
8:1
IF
IF
OUT
11
10
50Ω
IF Output Port
C3
L1 V
CC
–
The IF outputs, IF+ and IF–, are internally connected to the
collectors of the mixer switching transistors (see Fig-
ure 7). Both pins must be biased at the supply voltage,
which can be applied through the center tap of a trans-
former or through matching inductors. Each IF pin draws
26.6mA of supply current (53.2mA total). For optimum
single-ended performance, these differential outputs
should be combined externally through an IF transformer
or a discrete IF balun circuit. The standard evaluation
board (see Figure 1) includes an IF transformer for
impedancetransformationanddifferentialtosingle-ended
transformation. A second evaluation board (see Figure 2)
realizes the same functionality with a discrete IF balun
circuit.
IF
V
CC
5557 F07
Figure 7. IF Output with External Matching
0.7nH
S
+
IF
IF
11
10
R
C
R || X
IF IF
S
–
0.7nH
5557 F08
Figure 8. IF Output Small-Signal Model
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APPLICATIO S I FOR ATIO
0
Transformer-Based Bandpass IF Matching
Thestandardevaluationboard(showninFigure1)usesan
L-CbandpassIFmatchingnetwork,withan8:1transformer
connected across the IF pins. The L-C network maximizes
mixer performance at the desired IF frequency. The
transformer performs impedance transformation and
provides a single-ended 50Ω output.
–10
–20
–30
B
A
C
D
E
The value of L1 is calculated as:
50
150
250
350
450
550
IF FREQUENCY (MHz)
L1 = 1/[(2πfIF)2 • CIF]
5557 G09
A: 70MHz, L1 = 270nH, C3 = 15pF
B: 140MHz, L1 = 180nH, C3 = 3.9pF
C: 240MHz, L1 = 82nH, C3 = 2.2pF
D: 360MHz, L1 = 47nH, C3 = 1.2pF
E: 450MHz, L1 = 39nH, C3 = 0pF
where CIF is the sum of C3 and the internal IF capacitance
(listed in Table 3). The value of C3 is selected such that L1
falls on a standard value, while satisfying the desired IF
bandwidth. The IF bandwidth can be estimated as:
Figure 9. IF Output Return Loss with
Transformer-Based Bandpass Matching
BWIF = 1/(2πREFFCIF)
Discrete IF Balun Matching
where REFF, the effective IF resistance when loaded with
thetransformerandinductorloss,isapproximately200Ω.
For many applications, it is possible to replace the IF
transformer with the discrete IF balun shown in Figure 2.
The values of L1, L2, C6 and C7 are calculated to realize a
180 degree phase shift at the desired IF frequency and
provide a 50Ω single-ended output, using the equations
listed below. Inductor L3 is calculated to cancel the
internal2.6pFcapacitance.L3alsosuppliesbiasvoltageto
the IF+ pin. Low cost multilayer chip inductors are ad-
equate for L1, L2 and L3. C3 is a DC blocking capacitor.
Below 40MHz, the magnitude of the internal IF reactance
is relatively high compared to the internal resistance. In
this case, L1 (and C3) can be eliminated, and the 8:1
transformer alone is adequate for IF matching.
The LT5557 was characterized with IF frequencies of
70MHz, 140MHz, 240MHz, 360MHz and 450MHz. The
values of L1 and C3 used for these frequencies are
tabulated in Figure 1 and repeated in Figure 9. In all cases,
L1 is a high-Q 0603 wire-wound chip inductor, for highest
conversion gain. Low-cost multi-layer chip inductors can
be substituted, with a slight reduction in conversion gain.
The measured IF output return losses are plotted in
Figure 9.
RIF •ROUT
L1, L2 =
ωIF
1
C6,C7 =
ωIF • RIF •ROUT
XIF
L3 =
ωIF
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APPLICATIO S I FOR ATIO
U
0
Theseequationsgiveagoodstartingpoint, butitisusually
necessary to adjust the component values after building
and testing the circuit. The final solution can be achieved
withlessiterationbyconsideringtheparasiticsofL3inthe
above calculations. Specifically, the effective parallel re-
sistanceofL3(calculatedfromthemanufacturer’sQdata)
will reduce the value of RIF, which in turn influences the
calculated values of L1 (=L2) and C6 (=C7). Also, the
effective parallel capacitance of L3 (taken from the manu-
facturers SRF data) must be considered, since it is in
parallel with XIF (from table 3). Frequently, the calculated
value for L1 does not fall on a standard value for the
desired IF. In this case, a simple solution is to load the IF
output with a high-value external chip resistor in parallel
with L3, which reduces the value of RIF, until L1 is a
standard value.
–10
–20
–30
360 MHz
240 MHz
190 MHz
150 250
IF FREQUENCY (MHz)
450 MHz
50
350 450
550
5557 F10
Figure 10. IF Output Return Losses with Discrete Balun Matching
26
24
22
20
18
16
14
12
10
8
–10
–20
–30
–40
–50
–60
–70
IIP3
190IF
240IF
360IF
450IF
Discrete IF balun element values for four common IF
frequencies (190MHz, 240MHz, 360MHz and 450MHz)
are listed in Table 4. The 190MHz application circuit uses
a 3.3kΩ resistor in parallel with L3 as described above.
The corresponding measured IF output return losses are
shown in Figure 10. Typical conversion gain, IIP3 and LO-
IF leakage, versus RF input frequency, for all four ex-
amples is shown in Figure 11. Typical conversion gain,
IIP3 and noise figure versus IF output frequency is shown
in Figure 12.
LOW-SIDE LO (–3dBm)
= 25°C
T
A
LO-IF
6
G
C
4
2
1700
1900
2000
2100
2200
1800
RF INPUT FREQUENCY (MHz)
5557 F11
Figure 11. Conversion Gain, IIP3 and LO-IF Leakage
vs RF Input Frequency and IF Output Frequency
(in MHz) Using Discrete IF Balun Matching
Compared to the transformer-based IF matching tech-
nique, this network delivers approximately 1dB higher
conversion gain (since the IF transformer loss is elimi-
nated), thoughnoisefigureandIIP3aredegradedslightly.
The most significant performance difference, as shown in
Figure 12, is the limited IF bandwidth available from the
discrete approach. For low IF frequencies, the absolute
bandwidth is small, whereas higher IF frequencies offer
wider bandwidth.
26
24
IIP3
22
20
18
16
14
12
10
8
190IF
240IF
360IF
450IF
SSB NF
RF = 1950MHz
LOW-SIDE LO (–3dBm)
Table 5. Discrete IF Balun Element Values (R
= 50Ω)
OUT
T
= 25°C
A
IF FREQUENCY
6
G
C
(MHz)
190
L1, L2
120nH
100nH
56nH
C6, C7
6.0pF
4.7pF
3.0pF
2.2pF
L3
270nH || 3.3kΩ
150nH
4
2
150
250 300 350 400 450 500
IF OUTPUT FREQUENCY (MHz)
200
240
5557 F12
360
82nH
Figure 12. Conversion Gain, IIP3 and SSB NF vs IF Output
Frequency Using Discrete IF Balun Matching
450
47nH
47nH
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APPLICATIO S I FOR ATIO
Differential IF Output Matching
performance goals, IF frequency, IF bandwidth and filter
(or amplifier) input impedance. Contact the factory for
applications assistance.
For fully differential IF architectures, the mixer’s IF out-
puts can be matched directly into a SAW filter or IF
amplifier, thus eliminating the IF transformer. One ex-
ample is shown in Figure 13, where the mixer’s 500Ω
differential output resistance is matched into a 100Ω
differential SAW filter using the tapped-capacitor tech-
nique. Inductors L1 and L2 form the inductive portion of
the matching network, cancel the internal 2.6pF capaci-
tance, and supply DC bias current to the mixer core.
CapacitorsC6throughC9arethecapacitiveportionofthe
matching, and perform the impedance step-down.
Enable Interface
Figure 14 shows a simplified schematic of the EN pin
interface. The voltage necessary to turn on the LT5557 is
2.7V. To disable the chip, the enable voltage must be less
than0.3V.IftheENpinisallowedtofloat,thechipwilltend
to remain in its last operating state. Thus it is not recom-
mended that the enable function be used in this manner.
If the shutdown function is not required, then the EN pin
should be connected directly to VCC.
The calculations for tapped-capacitor matching are cov-
ered in the literature, and are not repeated here. Other
differential matching options include low-pass, high-
pass and band-pass. The choice depends on the system
The voltage at the EN pin should never exceed the power
supply voltage (VCC) by more than 0.3V. If this should
occur, the supply current could be sourced through the
EN pin ESD diode, potentially damaging the IC.
C6
LT5557
V
CC2
SAW
FILTER
C8
IF
AMP
L1
L2
+
–
EN
IF
IF
5
22k
5557 F13
C7
C9
V
CC
C2
SUPPLY
DECOUPLING
C1
5557 F14
Figure 13. Differential IF Matching Using
the Tapped-Capacitor Technique
Figure 14. Enable Input Circuit
Standard Evaluation Board Layout (DC1131A)
Discrete IF Evaluation Board Layout (DC910A)
5557fa
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LT5557
U
PACKAGE DESCRIPTIO
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 0.05
4.35 0.05
2.90 0.05
2.15 0.05
(4 SIDES)
PACKAGE OUTLINE
0.30 0.05
0.65 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
BOTTOM VIEW—EXPOSED PAD
PIN 1 NOTCH R = 0.20 TYP
OR 0.35 × 45° CHAMFER
0.75 0.05
R = 0.115
TYP
4.00 0.10
(4 SIDES)
15
16
0.55 0.20
PIN 1
TOP MARK
(NOTE 6)
1
2
2.15 0.10
(4-SIDES)
(UF16) QFN 10-04
0.200 REF
0.30 0.05
0.65 BSC
0.00 – 0.05
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
5557fa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
15
LT5557
RELATED PARTS
PART NUMBER DESCRIPTION
Infrastructure
COMMENTS
LT5511
LT5512
LT5514
High Linearity Upconverting Mixer
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
1KHz-3GHz High Signal Level Active Mixer
20dBm IIP3 from 30MHz to 900MHz, Integrated LO Buffer, HF/VHF/UHF Optimized
850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range
Ultralow Distortion, IF Amplifier/ADC Driver
with Digitally Controlled Gain
LT5515
LT5516
1.5GHz to 2.5GHz Direct Conversion Quadrature
Demodulator
20dBm IIP3, Integrated LO Quadrature Generator
21.5dBm IIP3, Integrated LO Quadrature Generator
21dBm IIP3, Integrated LO Quadrature Generator
0.8GHz to 1.5GHz Direct Conversion Quadrature
Demodulator
LT5517
LT5519
40MHz to 900MHz Quadrature Demodulator
0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
LT5520
LT5521
LT5522
1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
10MHz to 3700MHz High Linearity
Upconverting Mixer
24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended
LO Port Operation
400MHz to 2.7GHz High Signal Level
Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF
and LO Ports
LT5525
LT5526
High Linearity, Low Power Downconverting Mixer
High Linearity, Low Power Downconverting Mixer
Single-Ended 50Ω RF and LO Ports, 17.6dBm IIP3 at 1900MHz, I = 28mA
CC
3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, I = 28mA,
CC
–65dBm LO-RF Leakage
LT5527
LT5528
LT5568
400MHz to 3.7GHz, 5V High Signal Level
Downconverting Mixer
23.5dBm IIP3 at 1.9GHz, NF = 12.5dB, Single-Ended RF and LO Ports
1.5GHz to 2.4GHz High Linearity Direct I/Q
Modulator
21.8dBm OIP3 at 2GHz, –159dBm/Hz Noise Floor, 50Ω Interface at all Ports
600MHz to 1.2GHz High Linearity Direct I/Q
Modulator
22.9dBm OIP3, –160.3dBm/Hz Noise Floor, –46dBc Image Rejection,
–43dBm Carrier Leakage
RF Power Detectors
LTC®5505
LTC5507
LTC5508
RF Peak Detectors with >40dB Dynamic Range
300MHz to 3GHz, Temperature Compensated, –32dBm to 12dBm
100kHz to 1GHz, Temperature Compensated, –34dBm to 14dBm
100kHz to 1000MHz RF Peak Power Detector
300MHz to 7GHz RF Peak Power Detector
44dB Dynamic Range, Temperature Compensated, SC70 Package,
–32dBm to 12dBm
LTC5509
LTC5530
LTC5531
LTC5532
300MHz to 3GHz RF Peak Power Detector
36dB Dynamic Range, Low Power Consumption, SC70 Package, –30dBm to 6dBm
300MHz to 7GHz Precision RF Peak Power Detector Precision V
300MHz to 7GHz Precision RF Peak Power Detector Precision V
300MHz to 7GHz Precision RF Peak Power Detector Precision V
Offset Control, Shutdown, Adjustable Gain, –32dBm to 10dBm
Offset Control, Shutdown, Adjustable Offset, –32dBm to 10dBm
Offset Control, Adjustable Gain and Offset,
OUT
OUT
OUT
35mV Offset Voltage Tolerence
LTC5533
LT5534
300MHz to 11GHz Dual Precision RF Peak Detector –32dBm to 12dBm, Adjustable Offset, 45dB Ch-Ch Isolation
50MHz to 3GHz RF Log Detector with 60dB
Dynamic Range
1dB Output Variation over Temperature, 38ns Response Time
LTC5536
LT5537
Precision 600MHz to 7GHz RF Peak Detector
with Fast Comparator Output
25ns Response Time, Comparator Reference Input, Latch Enable Input,
–26dBm to +12dBm Input Range
90dB Dynamic Range RF Log Detector
LF to 1GHz, –79dBm to 12dBm, Very Low Tempco
Low Voltage RF Building Block
LT5546
500MHz Quadrature Demodulator with VGA and
17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V Supply, –7dB to
17MHz Baseband Bandwidth
56dB Linear Power Gain
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LT/CGRAFX 0407 REV A • PRINTED IN THE USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
16
●
●
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2006
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