LT5575EUFTRPBF [Linear]
800MHz to 2.7GHz High Linearity Direct Conversion Quadrature Demodulator; 800MHz至2.7GHz的高线性度直接转换正交解调器
| 型号： | LT5575EUFTRPBF |
| 厂家： | 
Linear |
| 描述： | 800MHz to 2.7GHz High Linearity Direct Conversion Quadrature Demodulator |
| 文件： | 总16页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LT5575
800MHz to 2.7GHz
High Linearity Direct Conversion
Quadrature Demodulator
DESCRIPTION
FEATURES
The LT®5575 is an 800MHz to 2.7GHz direct conversion
quadrature demodulator optimized for high linearity
■
Input Frequency Range: 0.8GHz to 2.7GHz*
50Ω Single-Ended RF and LO Ports
■
■
High IIP3: 28dBm at 900MHz, 22.6dBm at 1.9GHz
High IIP2: 54.1dBm at 900MHz, 60dBm at 1.9GHz
Input P1dB: 13.2dBm at 900MHz
I/Q Gain Mismatch: 0.04dB Typical
I/Q Phase Mismatch: 0.4° Typical
Low Output DC Offsets
Noise Figure: 12.8dB at 900MHz, 12.7dB at 1.9GHz
Conversion Gain: 3dB at 900MHz, 4.2dB at 1.9GHz
Very Few External Components
receiver applications. It is suitable for communications
receivers where an RF signal is directly converted into I
and Q baseband signals with bandwidth up to 490MHz.
The LT5575 incorporates balanced I and Q mixers, LO
bufferamplifiersandaprecision,highfrequencyquadrature
phaseshifter.Theintegratedon-chipbroadbandtransform-
ers provide 50Ω single-ended interfaces at the RF and LO
inputs. Only a few external capacitors are needed for its
application in an RF receiver system.
■
■
■
■
■
■
■
■
■
■
Shutdown Mode
16-Lead QFN 4mm × 4mm Package with
Exposed Pad
The high linearity of the LT5575 provides excellent spur-
free dynamic range for the receiver. This direct conversion
demodulator can eliminate the need for intermediate fre-
quency(IF)signalprocessing,aswellasthecorresponding
requirements for image filtering and IF filtering. Channel
filtering can be performed directly at the outputs of the I
and Q channels. These outputs can interface directly to
channel-select filters (LPFs) or to baseband amplifiers.
APPLICATIONS
■
Cellular/PCS/UMTS Infrastructure
■
RFID Reader
■
High Linearity Direct Conversion I/Q Receiver
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
*Operation over a wider frequency range is possible with reduced performance. Consult
the factory.
TYPICAL APPLICATION
Conversion Gain, NF, IIP3 and IIP2
vs LO Input Power at 1900MHz
High Signal-Level I/Q Demodulator for Wireless Infrastructure
+5V
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
IIP2
V
CC
LT5575
+
RF
INPUT
BPF
BPF
LPF
I
OUT
RF
LNA
VGA
A/D
–
I
IIP3
OUT
0°
DSB NF
LO
LO INPUT
ENABLE
–40°C
25°C
85°C
0°/90°
CONV
GAIN
90°
+
LPF
Q
Q
OUT
VGA
A/D
–
OUT
EN
0
–5
–15
–10
0
5
5575 TA01
LO INPUT POWER (dBm)
5575 TA01b
5575f
1
LT5575
ABSOLUTE MAXIMUM RATINGS
PIN CONFIGURATION
(Note 1)
TOP VIEW
Power Supply Voltage..............................................5.5V
Enable Voltage ................................ –0.3V to V + 0.3V
CC
16 15 14 13
LO Input Power....................................................10dBm
RF Input Power....................................................20dBm
RF Input DC Voltage............................................... 0.1V
LO Input DC Voltage .............................................. 0.1V
Operating Ambient Temperature ..............–40°C to 85°C
Storage Temperature Range...................–65°C to 125°C
Maximum Junction Temperature .......................... 125°C
GND
RF
1
2
3
4
12
V
CC
11 GND
17
GND
GND
LO
10
9
GND
5
6
7
8
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
= 125°C, θ = 37°C/W
T
JMAX
JA
CAUTION: This part is sensitive to electrostatic discharge
(ESD). It is very important that proper ESD precautions
be observed when handling the LT5575.
EXPOSED PAD (PIN #17) IS GND, MUST BE SOLDERED TO PCB
ORDER INFORMATION
LEAD FREE FINISH
TAPE AND REEL
PART MARKING
PACKAGE DESCRIPTION
16-Lead (4mm × 4mm) QFN
TEMPERATURE RANGE
–40°C to 85°C
LT5575EUF#PBF
LT5575EUF#TRPBF
5575
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on nonstandard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
DC ELECTRICAL CHARACTERISTICS
V
= +5V, T = 25°C, unless otherwise noted. (Note 3)
CC A
PARAMETER
CONDITIONS
MIN
TYP
MAX
5.25
155
UNITS
V
Supply Voltage
Supply Current
Shutdown Current
Turn On Time
4.5
132
< 1
mA
µA
ns
EN = Low
100
120
750
Turn Off Time
ns
EN = High (On)
EN = Low (Off)
EN Input Current
Output DC Offset Voltage
2
V
1
V
V
= 5V
120
< 9
µA
mV
ENABLE
f
= 1900MHz, P = 0dBm
LO
LO
+
–
+
–
(|I
– I
|, |Q
– Q
|)
OUT
OUT
OUT
OUT
Output DC Offset Variation
vs Temperature
–40°C to 85°C
38
µV/°C
5575f
2
LT5575
AC ELECTRICAL CHARACTERISTICS Test circuit shown in Figure 1. (Notes 2, 3)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
RF Input Frequency Range
No External Matching (High Band)
With External Matching (Low Band, Mid Band)
1.5 to 2.7
0.8 to 1.5
GHz
GHz
LO Input Frequency Range
No External Matching (High Band)
With External Matching (Low Band, Mid Band)
1.5 to 2.7
0.8 to 1.5
GHz
GHz
Baseband Frequency Range
DC to 490
MHz
Baseband I/Q Output Impedance
Single-Ended
65Ω// 5pF
RF Input Return Loss
LO Input Return Loss
LO Input Power
Z = 50Ω, 1.5GHz to 2.7GHz,
>10
>10
dB
dB
O
Internally Matched
Z = 50Ω, 1.5GHz to 2.7GHz,
O
Internally Matched
–13 to 5
dBm
AC ELECTRICAL CHARACTERISTICS
(Notes 2, 3, 6)
V
= +5V, EN = High, T = 25°C, P = –10dBm (–10dBm/tone for
CC A RF
2-tone IIP2 and IIP3 tests), Baseband Frequency = 1MHz (0.9MHz and 1.1MHz for 2-tone tests), P = 0dBm, unless otherwise noted.
LO
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Gain
Voltage Gain, R
= 1kΩ
LOAD
R = 900MHz (Note 5)
3
dB
dB
dB
dB
F
R = 1900MHz
4.2
3.5
2
F
R = 2100MHz
F
R = 2500MHz
F
Noise Figure (Double-Side Band, Note 4)
Input 3rd-Order Intercept
Input 2nd-Order Intercept
Input 1dB Compression
I/Q Gain Mismatch
R = 900MHz (Note 5)
12.8
12.7
13.6
15.7
dB
dB
dB
dB
F
R = 1900MHz
F
R = 2100MHz
F
R = 2500MHz
F
R = 900MHz (Note 5)
28
dBm
dBm
dBm
dBm
F
R = 1900MHz
22.6
22.7
23.3
F
R = 2100MHz
F
R = 2500MHz
F
R = 900MHz (Note 5)
54.1
60
dBm
dBm
dBm
dBm
F
R = 1900MHz
F
R = 2100MHz
56
F
R = 2500MHz
52.3
F
R = 900MHz (Note 5)
13.2
11.2
11
dBm
dBm
dBm
dBm
F
R = 1900MHz
F
R = 2100MHz
F
R = 2500MHz
12.3
F
R = 900MHz (Note 5)
0.03
0.01
0.04
0.04
dB
dB
dB
dB
F
R = 1900MHz
F
R = 2100MHz
F
R = 2500MHz
F
I/Q Phase Mismatch
R = 900MHz (Note 5)
0.5
0.4
0.6
0.2
°
°
°
°
F
R = 1900MHz
F
R = 2100MHz
F
R = 2500MHz
F
LO to RF Leakage
R = 900MHz (Note 5)
–60.8
–64.6
–60.2
–51.2
dBm
dBm
dBm
dBm
F
R = 1900MHz
F
R = 2100MHz
F
R = 2500MHz
F
5575f
3
LT5575
AC ELECTRICAL CHARACTERISTICS
(Notes 2, 3, 6)
V
= +5V, EN = High, T = 25°C, P = –10dBm (–10dBm/tone for
CC A RF
2-tone IIP2 and IIP3 tests), Baseband Frequency = 1MHz (0.9MHz and 1.1MHz for 2-tone tests), P = 0dBm, unless otherwise noted.
LO
PARAMETER
CONDITIONS
R = 900MHz (Note 5)
MIN
TYP
MAX
UNITS
RF to LO Isolation
59.7
57.1
59.5
53.1
dBc
dBc
dBc
dBc
F
R = 1900MHz
F
R = 2100MHz
F
R = 2500MHz
F
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 5: 900MHz performance is measured with external RF and LO
matching. The optional output capacitors C1-C4 (10pF) are also used for
best IIP2 performance.
+
Note 6: For these measurements, the complementary outputs (e.g., I
,
OUT
–
Note 2: Tests are performed as shown in the configuration of Figure 1.
I
) were combined using a 180˚ phase shift combiner.
OUT
Note 3: Specifications over the –40˚C to 85˚C temperature range are
assured by design, characterization and correlation with statistical
process control.
Note 7: Large-signal noise figure is measured at an output frequency of
198.7MHz with RF input signal at f –1MHz. Both RF and LO input signals
LO
are appropriately bandpass filtered, as well as baseband output.
Note 4: DSB Noise Figure is measured with a small-signal noise source
at the baseband frequency of 15MHz without any filtering on the RF input
and no other RF signal applied.
5575f
4
LT5575
TYPICAL AC PERFORMANCE CHARACTERISTICS
Test Circuit Shown in Figure 1 (Note 6).
V
= 5V, EN = High, T = 25ºC, P = –10dBm
CC
A
RF
(–10dBm/tone for 2-tone IIP2 and IIP3 tests), f = 1MHz (0.9MHz and 1.1MHz for 2-tone tests), P = 0dBm, unless otherwise noted.
BB
LO
Conversion Gain, NF and IIP3
Supply Current
vs Supply Voltage
vs Frequency
IIP2 vs Frequency
70
65
60
55
50
45
40
160
150
35
–40°C
25°C
85°C
30
25
20
15
10
5
85°C
IIP3
140
130
LOW
MID
BAND BAND
25°C
–40°C
5.00
HIGH BAND
DSB NF
120
110
100
CONV GAIN
–40°C
25°C
85°C
0
1400
800
1400 1700 2000 2300 2600
800 1100
1700 2000 2300 2600
1100
4.50
4.75
5.25
5.50
RF INPUT FREQUENCY (MHz)
RF INPUT FREQUENCY (MHz)
SUPPLY VOLTAGE (V)
5575 G03
5575 G02
5575 G01
Conversion Gain
vs RF Input Power
I/Q Gain Mismatch
I/Q Phase Mismatch
vs RF Input Frequency
vs RF Input Frequency
0.3
0.2
3
2
1
0
1
2
3
5
f
= 1MHz
–40°C
25°C
85°C
f
= 1MHz
BB
–40°C
25°C
85°C
BB
1900MHz
4
3
900MHz
0.1
2500MHz
0.0
2
–0.1
–0.2
–0.3
1
0
–1
800
1400 1700 2000 2300 2600
RF FREQUENCY (MHz)
800
1400 1700 2000 2300 2600
RF FREQUENCY (MHz)
1100
1100
–15
–5
0
5
10
15
–10
RF INPUT POWER (dBm)
5575 G04
5575 G05
5575 G06
RF-LO Isolation
LO-RF Leakage
Conversion Gain
vs RF Input Power
vs LO Input Power
vs Baseband Frequency
70
65
60
55
50
45
40
6
5
–40
–45
–50
–55
–60
–65
–70
–75
–80
f
LO
= 1901MHz
–40°C
25°C
900MHz
4
3
2500MHz
85°C
1900MHz
2500MHz
900MHz
2
1
0
1900MHz
–16
–8
–4
0
4
8
–15
–5
–10
LO INPUT POWER (dBm)
5
–12
0
0.1
1.0
10
100
1000
RF INPUT POWER (dBm)
BASEBAND FREQUENCY (MHz)
5575 G07
5575 G08
5575 G09
5575f
5
LT5575
TYPICAL AC PERFORMANCE CHARACTERISTICS
Test Circuit Shown in Figure 1 (Note 6).
V
= 5V, EN = High, T = 25ºC, P = –10dBm
CC A RF
(–10dBm/tone for 2-tone IIP2 and IIP3 tests), f = 1MHz (0.9MHz and 1.1MHz for 2-tone tests), P = 0dBm, unless otherwise noted.
BB
LO
Conversion Gain, IIP3, NF
vs LO Input Power at 900MHz
35
Output Power and IM3
vs RF Input Power at 900MHz
IIP2 vs LO Input Power at 900MHz
10
–10
70
65
60
55
50
45
40
35
30
f
= 901MHz
–40°C
25°C
85°C
f
LO
= 901MHz
f
LO
= 901MHz
LO
IIP3
30
25
20
15
10
5
OUTPUT POWER
–40°C
25°C
85°C
–30
–50
–70
–90
–110
DSB NF
IM3 PRODUCT
–40°C
25°C
85°C
CONV GAIN
–5
0
–15
–10
0
5
–16
–8
–4
0
4
8
–5
LO INPUT POWER (dBm)
–12
–15
–10
0
5
RF INPUT POWER (dBm)
LO INPUT POWER (dBm)
5575 G10
5575 G11
5575 G12
Conversion Gain, IIP3, NF
vs LO Input Power at 1900MHz
Output Power and IM3
vs RF Input Power at 1900MHz
IIP2 vs LO Input Power
at 1900MHz
30
25
70
65
10
–10
f
= 1901MHz
–40°C
25°C
85°C
f
LO
= 1901MHz
f
LO
= 1901MHz
LO
IIP3
OUTPUT POWER
20
15
60
55
–30
–50
–70
–90
–110
DSB NF
IM3 PRODUCT
10
5
50
45
40
CONV. GAIN
–5
–40°C
25°C
85°C
–40°C
25°C
85°C
0
–15
–10
0
5
–15
–10
–5
0
5
–16
–8
–4
0
4
8
–12
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
RF INPUT POWER (dBm)
5575 G13
5575 G15
5575 G14
Conversion. Gain, IIP3, NF
vs LO Input Power at 2500MHz
Output Power and IM3
vs RF Input Power at 2500MHz
IIP2 vs LO Input Power
at 2500MHz
30
25
10
–10
70
65
60
55
50
45
40
35
30
f
= 2501MHz
f
LO
= 2501MHz
–40°C
25°C
85°C
f
= 2501MHz
LO
LO
IIP3
OUTPUT POWER
20
15
–30
–50
–70
–90
–110
IM3 PRODUCT
DSB NF
–40°C
25°C
85°C
10
5
–40°C
25°C
85°C
CONV. GAIN
–5
0
–15
–10
0
5
–15
–5
–10
LO INPUT POWER (dBm)
5
0
–16
–8
–4
0
4
8
–12
LO INPUT POWER (dBm)
RF INPUT POWER (dBm)
5575 G16
5575 G17
5575 G18
5575f
6
LT5575
TYPICAL AC PERFORMANCE CHARACTERISTICS
Test Circuit Shown in Figure 1 (Notes 6, 7).
V
= 5V, EN = High, T = 25ºC, P = –10dBm
CC
A
RF
(–10dBm/tone for 2-tone IIP2 and IIP3 tests), f = 1MHz (0.9MHz and 1.1MHz for 2-tone tests), P = 0dBm, unless otherwise noted.
BB
LO
I/Q Gain Mismatch
vs LO Input Power
0.3
I/Q Phase Mismatch
vs LO Input Power
Large-Signal DSB NF
vs RF Input Power
30
28
26
24
22
20
18
16
14
12
10
3
2
f
= 1MHz
f
= 1MHz
BB
900MHz
1900MHz
2500MHz
NOTE 7
BB
0.2
0.1
0.0
1
0
2500MHz
1900MHz
900MHz
900MHz
–0.1
–0.2
–0.3
–1
–2
–3
2500MHz
1900MHz
–15
–10
–5
0
5
–15
–10
–5
0
5
–30 –25 –20 –15 –10 –5
0
5
10
RF INPUT POWER (dBm)
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
5575 G19
5575 G20
5575 G21
Conversion Gain, IIP3, NF
vs Supply Voltage
RF Port Return Loss
LO Port Return Loss
0
–5
0
35
30
25
20
15
10
5
4.75V
5V
–5
5.25V
IIP3
–10
–15
–10
–15
–20
–25
LOW BAND;
C10 = 4.7pF
MID BAND;
C10 = 2pF
HIGH BAND;
NO EXTERNAL
COMPONENT
DSB NF
–20
LOW BAND; C12 = 3.9pF
MID BAND; C12 = 2.2pF
HIGH BAND;
CONV. GAIN
–25
–30
NO EXTERNAL COMPONENT
0
800
1400 1700 2000 2300 2600
FREQUENCY (MHz)
5575 G23
800
1400 1700 2000 2300 2600
FREQUENCY (MHz)
5575 G22
1100
1100
800
1400 1700 2000 2300 2600
RF FREQUENCY (MHz)
1100
5575 G24
I/Q Gain Mismatch
vs Supply Voltage
I/Q Phase Mismatch
vs Supply Voltage
IIP2 vs Supply Voltage
70
65
60
55
50
45
40
0.3
0.2
3
2
4.75V
5V
4.75V
5V
4.75V
5V
5.25V
5.25V
5.25V
0.1
1
0.0
0
–0.1
–0.2
–0.3
–1
–2
–3
800
1400 1700 2000 2300 2600
RF FREQUENCY (MHz)
800 1100 1400 1700 2000 2300 2600
RF FREQUENCY (MHz)
800
1400 1700 2000 2300 2600
RF FREQUENCY (MHz)
1100
1100
5575 G27
5575 G25
5575 G26
5575f
7
LT5575
TYPICAL AC PERFORMANCE CHARACTERISTICS
Test Circuit Shown in Figure 1 (Note 6).
V
= 5V, EN = High, T = 25ºC, P = –10dBm
CC A RF
(–10dBm/tone for 2-tone IIP2 and IIP3 tests), f = 1MHz (0.9MHz and 1.1MHz for 2-tone tests), P = 0dBm, unless otherwise noted.
BB
LO
Conversion Gain Distribution
at 1900MHz
IIP3 Distribution at 1900MHz
vs Temperature
Noise Figure Distribution
at 1900MHz
50
30
25
20
15
10
5
35
30
25
20
15
10
5
T
= 25°C
–40°C
25°C
85°C
T
= 25°C
A
A
45
40
35
30
25
20
15
10
5
0
0
0
3.8 3.9
4
4.1 4.2 4.3 4.4
21.4 21.8 22.2 22.6 23 23.4 23.8 24.2 24.6 25
IIP3 (dBm)
12.112.212.312.412.512.612.712.812.9 13
DSB NOISE FIGURE (dB)
CONVERSION GAIN (dB)
5575 G28
5575 G29
5575 G30
I/Q Amplitude Mismatch Distribution
at 1900MHz vs Temperature
I/Q Phase Mismatch Distribution
at 1900MHz vs Temperature
25
20
15
60
50
40
30
20
10
0
–40°C
25°C
85°C
–40°C
25°C
85°C
10
5
0
–1.2 –0.8 –0.4
0
0.4 0.8 1.2 1.6 2.0 2.2
–20
0
20
40
60
80
PHASE MISMATCH (°)
AMPLITUDE MISMATCH (mdB)
5575 G32
5575 G31
I-Output DC Offset Voltage
Distribution vs Temperature
Q-Output DC Offset Voltage
Distribution vs Temperature
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
–40°C
25°C
85°C
–40°C
25°C
85°C
0
0
2
4
6
8
10 12 14 16 18
–10 –8 –6 –4 –2
0
2
4
6
DC OFFSET (mV)
DC OFFSET (mV)
5575 G33
5575 G34
5575f
8
LT5575
PIN FUNCTIONS
GND (Pins 1, 3, 4, 9, 11): Ground pin.
LO (Pin 10): Local Oscillator Input Pin. This is a single-
ended 50Ω terminated input. No external matching net-
work is required in the high frequency band. An external
shunt capacitor (and/or series capacitor) may be required
forimpedancetransformationto50Ωforthelowfrequency
band from 800MHz to 1.5GHz (see Figure 6). If the LO
sourceisnotDCblocked, aseriesblockingcapacitormust
be used. Otherwise, damage to the IC may result.
RF (Pin 2): RF Input Pin. This is a single-ended 50Ω ter-
minated input. No external matching network is required
for the high frequency band. An external series capacitor
(and/or shunt capacitor) may be required for impedance
transformation to 50Ω in the low frequency band from
800MHz to 1.5GHz (see Figure 4). If the RF source is not
DC blocked, a series blocking capacitor should be used.
Otherwise, damage to the IC may result.
–
+
Q
, Q
(Pins 13, 14): Differential Baseband
Output Pins of the Q Channel. The internal DC bias voltage
is V – 1.1V for each pin.
OUT
OUT
V
(Pins 6, 7, 8, 12): Power Supply Pins. These pins
CC
CC
should be decoupled using 1000pF and 0.1µF capacitors.
–
+
I
, I
(Pins 15, 16): Differential Baseband
OUT
OUT
EN (Pin 5): Enable Pin. When the input voltage is higher
than 2.0V, the circuit is completely turned on. When the
enable pin voltage is less than 1.0V, the circuit is turned
off. Under no conditions should the voltage at the EN
Output Pins of the I Channel. The internal DC bias voltage
is V – 1.1V for each pin.
CC
Exposed Pad (Pin 17): Ground Return for the Entire IC.
This pin must be soldered to the printed circuit board
ground plane.
pin exceed V + 0.3V. Otherwise, damage to the IC may
CC
result. If the Enable function is not needed, then the EN
pin should be tied to V .
CC
BLOCK DIAGRAM
V
V
V
V
CC
CC
CC
CC
6
7
8
12
RF AMP
I-MIXER
+
LPF
16
I
I
OUT
OUT
–
15
11
RF
2
3
GND
LO BUFFERS
0°/90°
GND
10
14
LO
RF AMP
+
–
LPF
Q
Q
OUT
OUT
13
Q-MIXER
9
BIAS
EXPOSED
PAD
1
4
5
17
5575 BD
GND
EN
5575f
9
LT5575
TEST CIRCUIT
J3
J4
J5
J6
–
+
+
–
I
I
Q
Q
OUT
OUT
OUT
OUT
C2
C4
(OPT)
(OPT)
C3
(OPT)
C1
(OPT)
GND
RF
V
J1
CC
RF
GND
LO
J2
LT5575
LO
C10
(OPT)
GND
GND
C5
1nF
C12
(OPT)
GND
V
EN
CC
RF
= 4.4
0.018"
0.018"
r
GND
R1
100K
C7
1nF
C8
0.1µF
C9
2.2µF
0.062"
DC
GND
5575 F01
SIZE
0402
0402
3216
0402
PART NUMBER
LO MATCH
C12
BASEBAND
C1-C4
REF DES
C5, C7
C8
VALUE
RF MATCH
C10
FREQUENCY
RANGE
1000pF
0.1µF
AVX 04025C102JAT
AVX 0402ZD104KAT
LOW BAND:
800 TO 1000MHz
4.7pF
3.9pF
10pF
C9
2.2µF
AVX TPSA225MO10R1800
MID BAND:
1000 TO 1500MHz
2pF
-
2pF
-
2.2pF
-
R1
100kΩ
HIGH BAND:
1500 TO 2700MHz
Figure 1. Evaluation Circuit Schematic
5575 F02
5575 F03
Figure 2. Top Side of Evaluation Board
Figure 3. Bottom Side of Evaluation Board
5575f
10
LT5575
APPLICATIONS INFORMATION
The LT5575 is a direct I/Q demodulator targeting high
linearity receiver applications, such as RFID readers and
wirelessinfrastructure.ItconsistsofRFtransconductance
amplifiers, I/Q mixers, a quadrature LO phase shifter, and
bias circuitry.
desired frequency as illustrated in Figure 5. For lower fre-
quency band operation, the external matching component
C11 can serve as a series DC blocking capacitor.
EXTERNAL
MATCHING
The RF signal is applied to the inputs of the RF
transconductance amplifiers and is then demodulated
into I/Q baseband signals using quadrature LO signals
which are internally generated from an external LO source
by precision 90° phase-shifters. The demodulated I/Q
signals are single-pole low-pass filtered on-chip with a
–3dBbandwidthof490MHz.Thedifferentialoutputsofthe
I-channel and Q-channel are well matched in amplitude;
their phases are 90° apart.
NETWORK FOR
LOW BAND AND
MID BAND
RF
INPUT
TO I-MIXER
C11
RF
2
3
C10
TO Q-MIXER
5575 F04
Broadband transformers are integrated on-chip at both
the RF and LO inputs to enable single-ended RF and LO
interfaces.Inthehighfrequencyband(1.5GHzto2.7GHz),
both RF and LO ports are internally matched to 50Ω. No
external matching components are needed. For the lower
frequency bands (800MHz to 1.5GHz), a simple network
with series and/or shunt capacitors can be used as the
impedance matching network.
Figure 4. RF Input Interface
0
C11 = 5.6pF;
C10 = 4.7pF
–5
C11 = 3.9pF;
NO SHUNT CAP
–10
–15
RF Input Port
Figure 4 shows the demodulator’s RF input which con-
sists of an integrated transformer and high linearity
transconductance amplifiers. The primary side of the
transformer is connected to the RF input pin. The second-
ary side of the transformer is connected to the differential
inputs of the transconductance amplifiers. Under no cir-
cumstances should an external DC voltage be applied to
the RF input pin. DC current flowing into the primary side
of the transformer may cause damage to the integrated
transformer. A series blocking capacitor should be used
to AC-couple the RF input port to the RF signal source.
–20
–25
–30
NO EXTERNAL
MATCHING
0.5
1.5
2.0
2.5
3.0
1.0
FREQUENCY (GHz)
5575 F05
Figure 5. RF Input Return Loss with External Matching
The RF input port is internally matched over a wide fre-
quencyrangefrom1.5GHzto2.7GHzwithinputreturnloss
typicallybetterthan10dB.Noexternalmatchingnetworkis
neededforthisfrequencyrange.Whenthepartisoperated
at lower frequencies, however, the input return loss can
be improved with the matching network shown in Figure
4. Shunt capacitor C10 and series capacitor C11 can be
selected for optimum input impedance matching at the
5575f
11
LT5575
APPLICATIONS INFORMATION
The RF input impedance and S11 parameters (without
external matching components) are listed in Table 1.
The LO input port is internally matched over a wide fre-
quency range from 1.5GHz to 2.7GHz with input return
loss typically better than 10dB. No external matching
network is needed for this frequency range. When the part
is operated at a lower frequency, the input return loss can
be improved with the matching network shown in Figure
6. Shunt capacitor C12 and series capacitor C13 can be
selected for optimum input impedance matching at the
desired frequency as illustrated in Figure 7. For lower
frequency operation, external matching component C13
can serve as the series DC blocking capacitor.
Table 1. RF Input Impedance
S11
FREQUENCY
(GHz)
INPUT
IMPEDANCE (
Ω)
MAG
0.760
0.715
0.660
0.595
0.521
0.441
0.355
0.270
0.188
0.110
0.042
0.032
0.084
0.131
0.172
0.207
0.235
0.258
0.274
0.287
ANGLE (°)
133.0
125.4
117.2
108.6
99.6
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
8.1 +j 21.3
10.5 +j 24.9
13.8 +j 28.8
18.6 +j 32.5
25.2 +j 35.5
33.6 +j 36.8
43.1 +j 34.6
51.4 +j 28.4
55.8 +j 19.3
55.4 +j 10.4
51.8 +j 3.9
46.9 +j 0.4
42.3 +j –0.8
38.4 +j –0.3
35.4 +j 1
90.3
80.8
EXTERNAL
MATCHING
71.6
NETWORK FOR
11
LOW BAND AND
LO QUADRATURE
63
MID BAND
LO
INPUT
GENERATOR AND
C13
BUFFER AMPLIFIERS
56.9
10
LO
63
C12
172.7
–173.9
–178.2
175.3
168.4
161.9
155.4
149.2
143.4
5575 F06
Figure 6. LO Input Interface
33 +j 2.9
31.5 +j 4.9
30.4 +j 7
0
C13 = 5.6pF;
C12 = 3.9pF
–5
29.9 +j 9.1
29.7 +j 11.1
NO EXTERNAL
MATCHING
–10
–15
LO Input Port
C13 = 5.6pF;
NO SHUNT CAP
–20
The demodulator’s LO input interface is shown in Fig-
ure6.Theinputconsistsofanintegratedtransformeranda
precisionquadraturephaseshifterwhichgenerates0°and
90° phase-shifted LO signals for the LO buffer amplifiers
drivingtheI/Qmixers. Theprimarysideofthetransformer
is connected to the LO input pin. The secondary side of
the transformer is connected to the differential inputs of
the LO quadrature generator. Under no circumstances
should an external DC voltage be applied to the input pin.
DCcurrentflowingintotheprimarysideofthetransformer
may damage the transformer. A series blocking capacitor
should be used to AC-couple the LO input port to the LO
signal source.
–25
–30
0.5
1.5
2.0
2.5
3.0
1.0
FREQUENCY (GHz)
5575 F07
Figure 7. LO Input Return Loss with External Matching
5575f
12
LT5575
APPLICATIONS INFORMATION
The LO input impedance and S11 parameters (without
external matching components) are listed in Table 2.
I-Channel and Q-Channel Outputs
Each of the I-channel and Q-channel outputs is internally
connected to V through a 65Ω resistor. The output DC
CC
Table 2. LO Input Impedance
biasvoltageisV – 1.1V. TheoutputscanbeDC-coupled
CC
S11
FREQUENCY
(GHz)
INPUT
or AC-coupled to the external loads. Each single-ended
output has an impedance of 65Ω in parallel with a 5pF
internal capacitor, forming a low-pass filter with a –3dB
corner frequency at 490MHz. The loading resistance
IMPEDANCE (
Ω)
MAG
0.731
0.669
0.592
0.508
0.421
0.341
0.272
0.221
0.189
0.18
ANGLE (°)
127.9
120.4
113.2
106.1
99.8
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
9.6 +j 23.7
13 +j 27.1
17.9 +j 30
on each output, R
(single-ended), should be larger
LOAD
24.1 +j 31.7
31.2 +j 31.4
37.5 +j 28.9
41.9 +j 24.6
43.4 +j 20
than 300Ω to assure full gain. The gain is reduced by
20 • log (1 + 65Ω/R ) in dB when the output port is
10
LOAD
95.1
terminated by R
. For instance, the gain is reduced
LOAD
by 7.23dB when each output pin is connected to a
50Ω load (or 100Ω differentially). The output should be
taken differentially (or by using differential-to-single-
ended conversion) for best RF performance, including
NF and IM2.
93.4
96.2
42.9 +j 16.4
41.2 +j 14.1
39.5 +j 13.1
37.8 +j 13.1
36.6 +j 13.6
35.6 +j 14.6
35.1 +j 15.7
34.9 +j 17.1
35.1 +j 18.5
35.5 +j 19.9
36.3 +j 21.2
37.2 +j 22.5
103.5
113.1
120.3
124.5
125.6
125
0.186
0.201
0.217
0.236
0.25
ThephaserelationshipbetweentheI-channeloutputsignal
and the Q-channel output signal is fixed. When the LO
input frequency is larger (or smaller) than the RF input
+
–
frequency, the Q-channel outputs (Q
, Q
) lead (or
OUT
OUT
123.1
120.1
116.6
113
+
–
lag) the I-channel outputs (I
, I
) by 90°.
OUT OUT
0.264
0.272
0.281
0.284
0.287
When AC output coupling is used, the resulting high-
pass filter’s –3dB roll-off frequency is defined by the RC
constant of the blocking capacitor and R
LOAD
, assuming
LOAD
109
R
>> 65Ω.
105.1
V
CC
5pF 65Ω
65Ω
5pF
5pF 65Ω
65Ω
5pF
+
–
I
I
OUT
OUT
16
15
+
–
Q
Q
OUT
OUT
14
13
5575 F08
Figure 8. I/Q Output Equivalent Circuit
5575f
13
LT5575
APPLICATIONS INFORMATION
Care should be taken when the demodulator’s outputs are
DC-coupled to the external load to make sure that the I/Q
mixers are biased properly. If the current drain from the
outputs exceeds 6mA, there can be significant degrada-
tion of the linearity performance. Each output can sink no
more than 16.8mA when the outputs are connected to an
Enable Interface
A simplified schematic of the EN pin is shown in Fig-
ure 9. The enable voltage necessary to turn on the LT5575
is 2V. To disable or turn off the chip, this voltage should
be below 1V. If the EN pin is not connected, the chip is
disabled. However, it is not recommended that the pin be
left floating for normal operation.
external load with a DC voltage higher than V – 1.1V.
CC
The I/Q output equivalent circuit is shown in Figure 8.
It is important that the voltage applied to the EN pin
should never exceed V by more than 0.3V. Otherwise,
the supply current may be sourced through the upper
ESD protection diode connected at the EN pin. Under no
circumstances should voltage be applied to the EN pin
before the supply voltage is applied to the V pin. If this
occurs, damage to the IC may result.
In order to achieve best IIP2 performance, it is important
to minimize high frequency coupling among the baseband
outputs, RF port and LO port. For a multilayer PCB layout
design, the metal lines of the baseband outputs should be
placed on the backside of the PCB as shown in Figures 2
and 3. Typically, output shunt capacitors C1-C4 are not
required for the application near 1900MHz. However, for
other frequency bands, these capacitors can be optimized
for best IIP2 performance. For example, when the oper-
ating frequency is 900MHz, the IIP2 can be improved to
54dBm or better when 10pF shunt capacitors are placed
at each output.
CC
CC
LT5575
V
CC
EN
5
60k
60k
5575 F09
Figure 9. Enable Pin Simplified Circuit
5575f
14
LT5575
PACKAGE DESCRIPTION
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 0.05
4.35 0.05
2.90 0.05
2.15 0.05
(4 SIDES)
PACKAGE OUTLINE
0.30 0.05
0.65 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
BOTTOM VIEW—EXPOSED PAD
PIN 1 NOTCH R = 0.20 TYP
OR 0.35 × 45° CHAMFER
0.75 0.05
R = 0.115
TYP
4.00 0.10
(4 SIDES)
15
16
0.55 0.20
PIN 1
TOP MARK
(NOTE 6)
1
2
2.15 0.10
(4-SIDES)
(UF16) QFN 10-04
0.200 REF
0.30 0.05
0.65 BSC
0.00 – 0.05
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
5575f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
15
LT5575
RELATED PARTS
PART NUMBER
Infrastructure
LT5514
DESCRIPTION
COMMENTS
Ultralow Distortion, IF Amplifier/ADC Driver
with Digitally Controlled Gain
850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range
LT5515
LT5516
1.5GHz to 2.5GHz Direct Conversion Quadrature 20dBm IIP3, Integrated LO Quadrature Generator
Demodulator
0.8GHz to 1.5GHz Direct Conversion Quadrature 21.5dBm IIP3, Integrated LO Quadrature Generator
Demodulator
LT5517
LT5518
40MHz to 900MHz Quadrature Demodulator
1.5GHz to 2.4GHz High Linearity Direct
Quadrature Modulator
21dBm IIP3, Integrated LO Quadrature Generator
22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor, 50Ω Single-Ended RF and LO
Ports, 4-Channel W-CDMA ACPR = –64dBc at 2.14GHz
LT5519
LT5520
LT5521
LT5522
LT5524
LT5525
LT5526
LT5527
LT5528
LT5558
0.7GHz to 1.4GHz High Linearity Upconverting 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching,
Mixer Single-Ended LO and RF Ports Operation
1.3GHz to 2.3GHz High Linearity Upconverting 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching,
Mixer
Single-Ended LO and RF Ports Operation
10MHz to 3700MHz High Linearity
Upconverting Mixer
24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO
Port Operation
600MHz to 2.7GHz High Signal Level
Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF
and LO Ports
Low Power, Low Distortion ADC Driver with
Digitally Programmable Gain
450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control
High Linearity, Low Power Downconverting
Mixer
Single-Ended 50Ω RF and LO Ports, 17.6dBm IIP3 at 1900MHz, I = 28mA
CC
High Linearity, Low Power Downconverting
Mixer
3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, I = 28mA,
CC
–65dBm LO-RF Leakage
400MHz to 3.7GHz High Signal Level
Downconverting Mixer
IIP3 = 23.5dBm and NF = 12.5dBm at 1900MHz, 4.5V to 5.25V Supply, I = 78mA,
CC
Conversion Gain = 2dB
1.5GHz to 2.4GHz High Linearity Direct
Quadrature Modulator
21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor, 50Ω, 0.5V Baseband
DC
Interface, 4-Channel W-CDMA ACPR = –66dBc at 2.14GHz
600MHz to 1100MHz High Linearity Direct
Quadrature Modulator
22.4dBm OIP3 at 900MHz, –158dBm/Hz Noise Floor, 3kΩ, 2.1V Baseband
DC
Interface, 3-Ch CDMA2000 ACPR = –70.4dBc at 900MHz
LT5560
LT5568
Ultra-Low Power Active Mixer
700MHz to 1050MHz High Linearity Direct
Quadrature Modulator
10mA Supply Current, 10dBm IIP3, 10dB NF, Usable as Up- or Down-Converter.
22.9dBm OIP3 at 850MHz, –160.3dBm/Hz Noise Floor, 50Ω, 0.5V Baseband
DC
Interface, 3-Ch CDMA2000 ACPR = –71.4dBc at 850MHz
LT5572
1.5GHz to 2.5GHz High Linearity Direct
Quadrature Modulator
21.6dBm OIP3 at 2GHz, –158.6dBm/Hz Noise Floor, High-Ohmic 0.5V Baseband
DC
Interface, 4-Ch W-CDMA ACPR = –67.7dBc at 2.14GHz
RF Power Detectors
LTC®5505
LTC5507
LTC5508
LTC5509
RF Power Detectors with >40dB Dynamic Range 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply
100kHz to 1000MHz RF Power Detector
300MHz to 7GHz RF Power Detector
300MHz to 3GHz RF Power Detector
100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply
44dB Dynamic Range, Temperature Compensated, SC70 Package
36dB Dynamic Range, Low Power Consumption, SC70 Package
LTC5530
LTC5531
LTC5532
300MHz to 7GHz Precision RF Power Detector Precision V
300MHz to 7GHz Precision RF Power Detector Precision V
300MHz to 7GHz Precision RF Power Detector Precision V
Offset Control, Shutdown, Adjustable Gain
Offset Control, Shutdown, Adjustable Offset
Offset Control, Adjustable Gain and Offset
OUT
OUT
OUT
LT5534
50MHz to 3GHz Log RF Power Detector with
60dB Dynamic Range
1dB Output Variation over Temperature, 38ns Response Time, Log Linear
Response
LTC5536
LT5537
Precision 600MHz to 7GHz RF Power Detector 25ns Response Time, Comparator Reference Input, Latch Enable Input,
with Fast Comparator Output
–26dBm to +12dBm Input Range
Wide Dynamic Range Log RF/IF Detector
Low Frequency to 1GHz, 83dB Log Linear Dynamic Range
5575f
LT 0107 • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
16
●
●
© LINEAR TECHNOLOGY CORPORATION 2007
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
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