MAX40200_V01 [MAXIM]

Ultra-Tiny Micropower, 1A Ideal Diode with Ultra-Low Voltage Drop;
MAX40200_V01
型号: MAX40200_V01
厂家: MAXIM INTEGRATED PRODUCTS    MAXIM INTEGRATED PRODUCTS
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Ultra-Tiny Micropower, 1A Ideal Diode with Ultra-Low Voltage Drop

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MAX40200  
Ultra-Tiny Micropower, 1A Ideal Diode  
with Ultra-Low Voltage Drop  
General Description  
The MAX40200 is an ideal diode current-switch that drops  
so little voltage that it approaches an order of magnitude  
better than Schottky diodes.  
Benefits and Features  
Save Critical Voltage Drop in Portable Application  
• Drops Less Than 43mV at 500mA; 85mV at 1A  
Longer Battery Life  
• Low Leakage When Reverse-Biased : 70nA (Typ),  
1.5µA (Max)  
• Low Supply Quiescent Current: 7µA (Typ), 18µA (Max)  
When forward-biased and enabled, the MAX40200  
conducts with as little as 85mV of voltage drop while carrying  
currents as high as 1A. Typical voltage drop is 43mV at  
500mA, with the voltage drop increasing linearly at higher  
currents. The MAX40200 thermally protects itself, and any  
downstream circuitry, from overtemperature conditions.  
Saves Space Over Larger Schottky Diodes  
• Tiny 0.73mm x 0.73mm 4-bump WLP  
• SOT23-5 Package  
When disabled (EN = low) the MAX40200 blocks voltages  
up to 6V in either direction, making it suitable for most  
low-voltage, portable electronic devices. The MAX40200  
operates from a supply voltage of 1.5V to 5.5V.  
Supply Voltage Range 1.5V to 5.5V  
Thermally Self-Protecting  
-40°C to +125°C Temperature Range  
The MAX40200 is available in a tiny, 0.73mm X 0.73mm,  
4-bump wafer-level package (WLP), with a 0.35mm bump  
pitch and only 0.5mm high and 5-pin SOT-23 package.  
The MAX40200 operates over the extended -40°C to  
+125°C temperature range.  
Functional Diagram and Package  
V
DD  
OUT  
Applications  
Notebook and Tablet Computers  
Portable Media Players  
Cellular Phones  
EN  
Portable/Wearable Medical Devices  
Electronic Toys  
USB-Powered Peripherals  
GND  
Ordering Information appears at end of data sheet.  
19-8728; Rev 3; 2/20  
MAX40200  
Ultra-Tiny Micropower, 1A Ideal Diode  
with Ultra-Low Voltage Drop  
Absolute Maximum Ratings  
Any Pin to GND.......................................................-0.3V to +6V  
Continuous Current Into EN...............................................10mA  
4 WLP  
Thermal Resistance (Multi-Layer Board)  
Continuous Current Flowing Between V  
and OUT  
Junction to Ambient (θ ).........................................104.41°C/W  
5 SOT-23  
Thermal Resistance (Multi-Layer Board)  
DD  
(WLP Package) ................................................................1.2A  
Continuous current flowing between V and OUT  
JA  
DD  
(SOT23-5 Package)..........................................................1.0A  
Maximum Power Dissipation  
Junction to Ambient (θ ).........................................255.90°C/W  
JA  
Junction to Case (θ ) ....................................................81°C/W  
JC  
WLP, Derate 9.58mW/°C above +70°C.......................766mW  
SOT, Derate 3.90mW/°C above +70°C..................312.60mW  
Operating Temperature Range ........................ -40°C to +125°C  
Junction Temperature......................................................+150°C  
Storage Temperature Range............................ -65°C to +150°C  
Reflow Soldering Peak Temperature (Pb-free) ...............+260°C  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these  
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect  
device reliability.  
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer  
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.  
Electrical Characteristics  
V
= 3.3V, GND = 0V, EN = V , T = -40°C to +125°C, unless otherwise noted. Typical values are at +25°C (Note 2)  
DD  
DD  
A
PARAMETER  
SYMBOL  
CONDITIONS  
Guaranteed by DV  
MIN  
TYP  
MAX  
UNITS  
Supply Voltage Range  
V
1.5  
5.5  
V
DD  
ON_FRWD  
EN = V , I  
= 0 mA  
7
18  
2.5  
1.5  
3.5  
DD FORWARD  
Quiescent Current  
I
µA  
µA  
DD  
EN = V  
, I  
= 0 mA  
0.7  
GND FORWARD  
Current drawn from V ; V  
- V  
- V  
= 0.1V  
= 0.1V  
-1.5  
-5.5  
0.072  
1.2  
Quiescent Current in Reverse  
Operation  
DD OUT  
DD  
Current drawn from OUT; V  
OUT  
DD  
Current sourced into V ; V  
= 0V,  
DD DD  
V
Leakage Current  
-0.55  
18  
+2.5  
40  
µA  
DD  
V
= 5.5V  
OUT  
Forward Turn-On Threshold  
Voltage  
Voltage between V  
positive than OUT) I  
and OUT (V  
more  
DD  
DD  
= 1mA  
V
mV  
ON_FRWD  
FORWARD  
Forward Turn-On Threshold  
Voltage Change Over Supply  
Voltage  
DV  
V
= 1.5V to 5.5V  
-3  
+0.2  
+3  
mV  
mV  
ON_FRWD  
DD  
Reverse Turn-Off Threshold  
Voltage between V  
and V  
20  
21  
45  
24  
43  
85  
32  
63  
46  
97  
197  
VOFF_REV  
DD  
OUT  
I
= 100mA  
52  
89  
FORWARD  
V
V
= 1.5V  
= 3.3V  
I
=
DD  
DD  
FORWARD  
Forward Voltage  
200mA  
V
57  
mV  
mV  
FWD  
FWD  
(V  
– V  
) (WLP Only)  
DD  
OUT  
I
I
I
= 500mA  
= 1A  
89  
FORWARD  
FORWARD  
FORWARD  
175  
65  
= 100mA  
V
V
= 1.5V  
= 3.3V  
110  
90  
I
=
DD  
DD  
FORWARD  
Forward Voltage (V – V  
DD  
)
OUT  
200mA  
V
(SOT Only)  
I
I
= 500mA  
175  
350  
FORWARD  
FORWARD  
= 1A (Note 3)  
Maxim Integrated  
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www.maximintegrated.com  
MAX40200  
Ultra-Tiny Micropower, 1A Ideal Diode  
with Ultra-Low Voltage Drop  
Electrical Characteristics (continued)  
V
= 3.3V, GND = 0V, EN = V , T = -40°C to +125°C, unless otherwise noted. Typical values are at +25°C (Note 2)  
DD  
DD  
A
PARAMETER  
SYMBOL  
CONDITIONS  
Stable for all load currents  
MIN  
TYP  
0.3 - 100  
154  
MAX  
UNITS  
µF  
Capacitive Load Range  
C
OUT  
Thermal Protection Threshold  
Thermal Protection Hysteresis  
°C  
10  
°C  
ENABLE (EN) CHARACTERISTICS  
Low-Level Input Current  
EN = 0V  
-1  
-0.1  
+0.1  
0.6  
µA  
V
Low-Level Voltage Level  
High Input Voltage Level  
High Level Input Current  
Enable Input Hysteresis  
LOW  
HIGH  
1.2  
V
EN = V  
0.5  
50  
2.5  
µA  
mV  
DD  
I
reaching 90% of its final value  
FORWARD  
Enable Time  
with a resistive load (R  
) = 33Ω and 4.7µF,  
65  
µs  
OUT  
enable input toggled from 0V to 3.3V  
I
I
(R  
prior to disable = 100mA,  
reaching ≤ 1mA resistive load  
) = 33Ω and 4.7µF, enable input  
FORWARD  
FORWARD  
Disable Time  
1.6  
65  
ms  
µs  
OUT  
toggled from 0V to 3.3V  
Power-Up Delay Time  
Note 2: All devices are production tested at T = + 25°C. Specifications over temperature are guaranteed by design  
A
Note 3: 1A pulsed current in duty cycle used for this test to make sure the device’s self heating is negligible. For more information,  
see Thermal Performance and Power Dissipation Information section.  
Maxim Integrated  
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MAX40200  
Ultra-Tiny Micropower, 1A Ideal Diode  
with Ultra-Low Voltage Drop  
Typical Operating Characteristics  
V
= 3.3V, GND = 0V, EN = V , 100mA load or I  
and 10µF C on OUT, T = -40°C to +125°C, unless otherwise noted.  
OUT A  
DD  
DD  
FORWARD  
Typical values are at +25°C.  
GROUND CURRENT  
vs. FORWARD/LOAD CURRENT  
QUIESCENT SUPPLY CURRENT  
vs. SUPPLY INPUT VOLTAGE  
GROUND CURRENT  
vs. FORWARD/LOAD CURRENT  
toc02a  
toc02b  
toc01  
70  
60  
50  
40  
30  
20  
10  
0
75  
50  
25  
0
24  
20  
16  
12  
8
VDD = 1.5V  
VDD=33..3V  
Refer to Figure 1 for Test Setup Conditions  
IFWD/LOAD = 0mA  
TA = 85°C  
TA = 125°C  
TA = 125°C  
TA = 85°C  
TA = 85°C  
TA = 125°C  
TA = 25°C  
TA = 25°C  
TA = 25°C  
TA = -40°C  
TA = -40°C  
4
TA = -40°C  
Refer to Figure 1 for Test Setup Conditions  
200 400 600 800 1000  
Refer to Figure 1 for Test Setup Conditions  
200 400 600 800 1000  
FORWARD/LOAD CURRENT(mA)  
0
0
0
0
1
2
3
4
5
6
FORWARD/LOAD CURRENT(mA)  
SUPPLY INPUT VOLTAGE (V)  
FORWARD VOLTAGE vs. FORWARD CURRENT  
GROUND CURRENT  
vs. FORWARD/LOAD CURRENT  
(WLP)  
toc02c  
toc03a  
100  
75  
50  
25  
0
400  
300  
200  
100  
0
DD = 1.5V  
VDD = 5.5V  
V
TA = 125°C  
TA = 85°C  
Refer to Figure 1 for Test Setup Conditions  
TA = 85°C  
TA = 125°C  
Thermal Limit Reached  
TA = 25°C  
TA = 25°C  
TA = -40°C  
TA = -40°C  
Refer to Figure 1 for Test Setup Conditions  
200 400 600 800 1000  
FORWARD/LOAD CURRENT(mA)  
0
0
250  
500  
750  
1000  
FORWARD CURRENT (mA)  
FORWARD VOLTAGE vs. FORWARD CURRENT  
FORWARD VOLTAGE vs. FORWARD CURRENT  
(WLP)  
(SOT)  
toc03b  
toc03c  
700  
600  
500  
400  
300  
200  
100  
0
150  
125  
100  
75  
VDD = 1.5V  
VDD = 3.3V  
Refer to Figure 1 for Test Setup Conditions  
Refer to Figure 1 for Test Setup Conditions  
TA = 85°C  
TA = 85°C  
TA = 125°C  
Themal Limit Reached  
TA = 125°C  
TA = 25°C  
TA = -40°C  
50  
TA = 25°C  
TA = -40°C  
25  
0
0
250  
500  
750  
1000  
0
250  
500  
750  
1000  
FORWARD CURRENT (mA)  
FORWARD CURRENT (mA)  
Maxim Integrated  
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MAX40200  
Ultra-Tiny Micropower, 1A Ideal Diode  
with Ultra-Low Voltage Drop  
Typical Operating Characteristics (continued)  
V
= 3.3V, GND = 0V, EN = V , 100mA load or I  
and 10µF C  
on OUT, T = -40°C to +125°C, unless otherwise noted.  
OUT A  
DD  
DD  
FORWARD  
Typical values are at +25°C.  
FORWARD VOLTAGE vs. FORWARD CURRENT  
FORWARD VOLTAGE vs. FORWARD CURRENT  
FORWARD VOLTAGE vs. FORWARD CURRENT  
(SOT)  
(SOT)  
(WLP)  
toc03d  
toc03e  
toc03f  
300  
100  
75  
50  
25  
0
250  
200  
150  
100  
50  
VDD = 3.3V  
VDD = 5.5V  
VDD = 5.5V  
Refer to Figure 1 for Test Setup Conditions  
Refer to Figure 1 for Test Setup Conditions  
Refer to Figure 1 for Test Setup Conditions  
250  
TA = 85°C  
TA = 85°C  
TA = 125°C  
Thermal Limit Reached  
TA = 85°C  
200  
TA = 125°C  
TA = 125°C  
Themal Limit Reached  
150  
100  
50  
0
TA = 25°C  
TA = -40°C  
TA = 25°C  
TA = -40°C  
TA = 25°C  
TA = -40°C  
0
0
250  
500  
750  
1000  
0
250  
500  
FORWARD CURRENT (mA)  
750  
1000  
0
250  
500  
FORWARD CURRENT (mA)  
750  
1000  
FORWARD CURRENT (mA)  
CATHODE CURRENT  
AT REVERSE OPERATION  
ANODE CURRENT  
AT REVERSE OPERATION  
toc04  
toc05  
5
4.5  
4
3
2.5  
2
ICATHODE  
IANODE  
VDD = 0V  
VDD = 0V  
Refer to Figure 2 for Test Setup Conditions  
Refer to Figure 2 for Test Setup Conditions  
TA = 85°C  
TA = 125°C  
3.5  
3
TA = 25°C  
1.5  
1
TA = 85°C  
TA = 125°C  
2.5  
2
1.5  
1
0.5  
0
TA = 25°C  
TA = -40°C  
0.5  
0
TA = -40°C  
-0.5  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VOUT (V)  
VOUT (V)  
ANODE CURRENT  
AT REVERSE OPERATION  
GROUND CURRENT  
AT REVERSE OPERATION  
toc06  
toc07  
2.5  
2
0.2  
0.15  
0.1  
VDD = 3.3V  
VOUT-VDD = 0.1V  
IGND  
VDD = 0V  
TA = 125°C  
Refer to Figure 2 for Test Setup Conditions  
TA = 85°C  
1.5  
1
TA = 25°C  
0.05  
0
0.5  
0
TA = -40°C  
-0.05  
-0.1  
Refer to Figure 2 for Test Setup Conditions  
-0.5  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
TEMPERATURE (°C)  
0
1
2
3
4
5
6
VOUT (V)  
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www.maximintegrated.com  
MAX40200  
Ultra-Tiny Micropower, 1A Ideal Diode  
with Ultra-Low Voltage Drop  
Typical Operating Characteristics (continued)  
V
DD  
= 3.3V, GND = 0V, EN = V , 100mA load or I  
and 10µF C on OUT, T = -40°C to +125°C, unless otherwise noted.  
OUT A  
DD  
FORWARD  
Typical values are at +25°C.  
POWER-UP DELAY  
toc9  
CATHODE CURRENT  
AT REVERSE OPERATION  
toc08  
3
2.5  
2
VDD = 0V  
VOUT = 5.5V  
Refer to Figure 2 for Test Setup Conditions  
3.3V  
2V/div  
VDD  
3.3V  
1.5  
1
1V/div  
0.5  
0
VOUT  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
TEMPERATURE (°C)  
RLOAD = 3.3k  
20µs/div  
ENABLE TRANSIENT  
FWD = 1A  
ENABLE TRANSIENT  
IFWD = 100mA  
toc10a  
toc10b  
I
3.3V  
3.3V  
2V/div  
1V/div  
2V/div  
1V/div  
V(EN)  
V(EN)  
3.3V  
3.3V  
VOUT  
VOUT  
CLOAD = 4.7µF  
CLOAD = 4.7µF  
10µs/div  
10µs/div  
DISABLE TRANSIENT  
IFWD = 100mA  
DISABLE TRANSIENT  
FWD = 1A  
I
toc11b  
toc11a  
3.3V  
3.3V  
2V/div  
2V/div  
V(EN)  
V(EN)  
3.3V  
3.3V  
1V/div  
1V/div  
VOUT  
VOUT  
CLOAD = 4.7µF  
CLOAD = 4.7µF  
400µs/div  
100µs/div  
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MAX40200  
Ultra-Tiny Micropower, 1A Ideal Diode  
with Ultra-Low Voltage Drop  
Test Setup  
Maxim Integrated  
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www.maximintegrated.com  
MAX40200  
Ultra-Tiny Micropower, 1A Ideal Diode  
with Ultra-Low Voltage Drop  
Pin Configurations  
Pin Description  
WLP  
A1  
5 SOT-23  
NAME  
FUNCTION  
1
5
V
Supply Input or Anode.  
DD  
A2  
OUT  
Ideal Diode Output or Cathode.  
Active-High Enable Input with a Weak Internal Pullup. Drive EN high to  
enable the device, and pull it low to disable the device.  
B1  
3
EN  
B2  
2
4
GND  
N.C.  
Circuit Ground and Substrate Connection.  
No Connect. Internally not connected.  
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MAX40200  
Ultra-Tiny Micropower, 1A Ideal Diode  
with Ultra-Low Voltage Drop  
It should be noted, however, that, unlike normal diodes,  
this “ideal diode” is not suited to rectifying AC. In applications  
where the supply is inductively coupled, conventional  
diodes should be used for the rectification part of the  
circuitry. MAX40200 is designed to be used in applications  
to switch between different DC sources.  
Detailed Description  
The MAX40200 mimics a near-ideal diode. The device  
blocks reverse-voltages and passes current when forward-  
biased just as a normal diode. The improvements are that  
instead of a cut-in voltage around 500mV and a logarithmic  
voltage-current transfer curve, the MAX40200 has a near  
constant voltage drop independent of the magnitude of  
the forward current flowing through it. This voltage drop is  
around 45mV at 500mA of forward or load current.  
Principle of Operation  
The MAX40200 features an internal pMOSFET to pass  
the current from the V  
input to the OUT output. The  
DD  
The constant forward voltage drop significantly helps with  
supply regulation; a normal diode typically drops an additional  
60mV for every 10 times change in current through it.  
internal MOSFET is controlled by circuitry that:  
1) Creates the 18mV constant forward drop when the  
MAX40200 is forward-biased.  
Similar to a normal diode, the MAX40200 also becomes  
resistive as the forward current exceeds the specified  
limit (see Figure 1). Unlike a normal diode, should the  
MAX40200 exceed the specified temperature, it will turn  
off in order to protect itself and the circuitry connected to  
it. Like a normal diode MAX40200 will turn-off when it is  
reverse biased. The turn-on and turn-off times for enable  
and disable responses are similar to those of forward and  
reverse bias conditions.  
2) Turns the MOSFET off when the part is reverse-biased.  
3) Turns the MOSFET off if the enable input is pulled low.  
4) Turns the device off when the device temperature  
exceeds the thermal protection threshold.  
This control circuitry consumes 7µA typical current and  
this limits the rate at which the internal MOSFET can be  
turned on/off.  
To ensure the control loop remains stable for all output  
current levels, there should always be a minimum of  
0.33µF connected to the OUT output and likewise, a minimum  
MAX40200 has an enable function feature. Unlike a normal  
diode the device can be turned off when not required.  
When turned off, it blocks voltages on either side to  
a maximum of 6V above ground. This feature allows  
MAX40200 to be used, to switch supply sources, or to  
control which sub-systems are to be powered up.  
of 0.33µF on the V  
input.  
DD  
These capacitors also improve the surge capability of  
power supply. In general for higher Output Capacitive  
Loads [e.g., C  
= 10µF], then C should be kept to  
OUT  
IN  
C
/10 (µF) for optimum transient response.  
OUT  
Applications Information  
150  
VD= 3.3V  
The simplest application would be as shown in Figure 2,  
where the battery has to be disconnected from the load  
when the wall-supply is connected. Often, the wall-supply  
can handle the additional losses of a normal diode, so it  
would use a regular diode to prevent battery power from  
flowing back into it.  
REFER TO FIGURE 2 FOR TEST SETUP  
125  
CONDITIONS  
100  
TA = 125°C  
75  
The battery, on the other hand, benefits significantly by  
only losing 30mV when powering the load, thus increasing  
the battery life between charging cycles.  
TA = 85°C  
50  
TA = -40°C  
TA = 25°C  
For systems that require more than the 500mA that the  
MAX40200 is specified for, it may be convenient to split  
the load up into various sections that could also benefit  
from the individual power enabling that the MAX40200’s  
Enable pins offer.  
25  
0
1
10  
100  
1000  
This also suggests that any integrated circuit without built-  
in power-down capability can have it added by powering it  
through a MAX40200.  
FORWARD CURRENT (mA)  
Figure 1. Forward Voltage vs. Forward Current (WLP)  
This allows many parts to be used in portable and other  
power-sensitive products.  
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MAX40200  
Ultra-Tiny Micropower, 1A Ideal Diode  
with Ultra-Low Voltage Drop  
DIODE (D1)  
FROM WALL ADAPTER  
IDEAL DIODE  
MAX40200  
LOAD  
BATTERY  
EN  
Figure 2. Diode ORing Circuit 1  
DIODE (D1)  
DIODE (D2)  
FROM WALL ADAPTER  
IDEAL DIODE (1)  
MAX40200  
LOAD-A  
BATTERY  
EN  
IDEAL DIODE (2)  
MAX40200  
LOAD-B  
EN  
Figure 3. Diode ORing Circuit 2  
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MAX40200  
Ultra-Tiny Micropower, 1A Ideal Diode  
with Ultra-Low Voltage Drop  
MAX40200  
BATTERY  
SUB  
SUB  
SUB  
CIRCUIT 1  
CIRCUIT 2  
CIRCUIT-N  
EN  
Figure 4. Typical Application Circuit  
For example:  
WLP:  
Thermal Performance and Power  
Dissipation Information  
At 1A I  
, T  
FWD  
85°C. V  
= 110mV. Therefore,  
FWD  
Although the device is guaranteed for T = -40°C to  
A =  
A
P
= 110mW.  
125°C, care must be taken when using heavy loads  
DIS  
(e.g., I  
above 500mA to 1A) where the forward  
FWD  
Package Derate Calculation:  
current across the ideal diode is large. The forward voltage  
drop across the VDD and OUT pins increases linearly  
with forward current. The device’s power dissipation is  
directly proportional to the voltage drop across the device.  
For 85°C: Maximum Power Dissipation from the data  
sheet: 766mW – [(85 - 70) x 9.58] = 622mW. The device is  
within specification. Therefore, the junction temperature:  
85°C + (104.41°C/W x 0.110W) = 85°C + 11.5°C = 96.5°C  
The power dissipation is going to be the differential  
SOT-23 (Small Outline Transistor Package):  
voltage (V  
) multiplied by the current passed  
FWD  
At 1A I  
, T  
85°C. V  
= 250mV. Hence,  
FWD  
by the device (I  
). The quiescent current of the  
FWD  
FWD  
A =  
P
= 250mW.  
device is negligible for these calculations. The ambient  
temperature is essentially the PCB temperature, since  
this is where all the heat is sunk to. Therefore, the  
DIS  
Package Derate Calculation:  
For 85°C: Maximum Power Dissipation from the data  
sheet: 312.6mW – [(85 - 70)°C x 3.9mW/°C] = 254.1mW.  
The device is very close to the power dissipation ratings  
provided in the absolute maximum specification.  
parts temperature rise is [V  
x I x θ ] + T ,  
FWD JA A  
FWD  
where T is the temperature of the board or ambient  
A
temperature. From this exercise, we observe that the  
internal temperature from power dissipation will be higher  
than the ambient temperature. The device has an internal  
thermal shutdown temperature of about +154°C and,  
typically, 12°C hysteresis.  
Hence the device’s junction temperature: 85°C +  
(255.90°C/W x 0.2541W) = 85°C + 65.02°C = 150.02°C  
As the above example shows, the thermal performance of  
the WLP exceeds the SOT package.  
When the device’s junction temperature rises to 154°C  
thermal trip is triggered, the thermal cycle for the WLP  
and SOT packages are shown in Figure 5 and Figure 6.  
Maxim Integrated  
11  
www.maximintegrated.com  
MAX40200  
Ultra-Tiny Micropower, 1A Ideal Diode  
with Ultra-Low Voltage Drop  
T
A
= 125°C  
T
A
= 125°C  
Figure 5. Thermal Protection (WLP)  
Figure 6. Thermal Protection (SOT)  
Maxim Integrated  
12  
www.maximintegrated.com  
MAX40200  
Ultra-Tiny Micropower, 1A Ideal Diode  
with Ultra-Low Voltage Drop  
Ordering Information  
Chip Information  
PROCESS: BiCMOS  
PART  
TEMP RANGE  
PIN-PACKAGE  
4 WLP  
MAX40200ANS+  
MAX40200AUK+  
-40°C to +125°C  
-40°C to +125°C  
5 SOT23  
+Denotes a lead(Pb)-free/RoHS-compliant package.  
Package Information  
For the latest package outline information and land patterns  
(footprints), go to www.maximintegrated.com/packages. Note  
that a “+”, “#”, or “-” in the package code indicates RoHS status  
only. Package drawings may show a different suffix character, but  
the drawing pertains to the package regardless of RoHS status.  
PACKAGE PACKAGE  
LAND  
PATTERN NO.  
OUTLINE NO.  
TYPE  
CODE  
Refer to  
App Note 1891  
4 WLP  
N40C0+1  
U5+1  
21-100103  
21-0057  
5 SOT23  
90-0174  
Maxim Integrated  
13  
www.maximintegrated.com  
MAX40200  
Ultra-Tiny Micropower, 1A Ideal Diode  
with Ultra-Low Voltage Drop  
Revision History  
REVISION REVISION  
PAGES  
CHANGED  
DESCRIPTION  
NUMBER  
DATE  
0
12/16  
Initial release  
Updated Electrical Characteristics table, correct typos in Applications and  
Detailed Description sections, added TOC, and removed future product asterisk  
from SOT version  
1
4/17  
1–3, 9, 13  
2
3
12/19  
2/20  
Updated Pin Description  
8
8
Updated Pin Description table  
For pricing, delivery, and ordering information, please visit Maxim Integrated’s online storefront at https://www.maximintegrated.com/en/storefront/storefront.html.  
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses  
are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits)  
shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.  
©
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.  
2020 Maxim Integrated Products, Inc.  
14  

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