MDD1504 [MGCHIP]
Single N-channel Trench MOSFET 30V, 31.5A, 12.7m(ohm);
| 型号： | MDD1504 |
| 厂家： | 
MagnaChip |
| 描述： | Single N-channel Trench MOSFET 30V, 31.5A, 12.7m(ohm) |
| 文件： | 总6页 (文件大小：667K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢀ
ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
MDD1504
ꢀ ꢀ SingleꢀNꢁchannelꢀTrenchꢀMOSFETꢀ30V,ꢀ31.5A,ꢀ12.7mꢂ
ㄹꢀ
ꢀ
ꢀ
ꢀ
GeneralꢀDescriptionꢀ
ꢀ
Featuresꢀ
ꢀ
Theꢀ MDD1504ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ MOSFETꢀ
Technology,ꢀwhichꢀprovidesꢀhighꢀperformanceꢀinꢀonꢁstateꢀ
resistance,ꢀ fastꢀ switchingꢀ performanceꢀ andꢀ excellentꢀ
quality.ꢀ ꢀ MDD1504ꢀ isꢀ suitableꢀ deviceꢀ forꢀ DCꢀ toꢀ DCꢀ
converterꢀandꢀgeneralꢀpurposeꢀapplications.ꢀ
ꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
VDSꢀ=ꢀ30Vꢀ
IDꢀ=ꢀ31.5Aꢀ@VGSꢀ=ꢀ10Vꢀ
RDS(ON)ꢀ(MAX)
<ꢀ12.7mꢀꢀ@VGSꢀ=ꢀ10Vꢀ
<ꢀ18.8mꢀꢀ@VGSꢀ=ꢀ4.5Vꢀ
100%ꢀUILꢀTestedꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ
ꢀꢀ
ꢀꢀ
100%ꢀRgꢀTestedꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
G
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ
ꢀ
Characteristicsꢀ
Symbolꢀ
VDSS
VGSS
Ratingꢀ
30ꢀ
Unitꢀ
Vꢀ
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ
ꢀ
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ
ꢀ
±20ꢀ
Vꢀ
ꢀ TC=25oCꢀ
31.5ꢀ
25.1ꢀ
17.2(3)
ꢀ TC=70oCꢀ
TA=25oCꢀ
TA=70oCꢀ
ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ(1)
ꢀ
IDꢀ
Aꢀ
Aꢀ
ꢀ
13.83)ꢀ
ꢀ ꢀ PulsedꢀDrainꢀCurrentꢀ
IDMꢀ
100ꢀ
ꢀ TC=25oCꢀ
ꢀ TC=70oCꢀ
TA=25oCꢀ
TA=70oCꢀ
20.8ꢀ
13.3ꢀ
ꢀ ꢀ PowerꢀDissipationꢀ
PDꢀ
Wꢀ
6.2(3)
4.0(3)
23ꢀ
ꢀ
ꢀ
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergyꢀ(2)
ꢀ
EAS
ꢀ
mJꢀ
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ
TJ,ꢀTstg
ꢀ
ꢁ55~150ꢀ
oC
ꢀ
ꢀ
ThermalꢀCharacteristicsꢀ
ꢀ
Characteristicsꢀ
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbientꢀ(1)
ThermalꢀResistance,ꢀJunctionꢁtoꢁCaseꢀ
Symbolꢀ
RθJA
RθJC
Ratingꢀ
20.0ꢀ
6.0ꢀ
Unitꢀ
ꢀ
ꢀ
oC/Wꢀ
ꢀ
ꢀ
1
May.ꢀ2011.ꢀVersionꢀ1.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
OrderingꢀInformationꢀ
ꢀ
PartꢀNumberꢀ
Temp.ꢀRangeꢀ
ꢁ55~150oCꢀ
Packageꢀ
Packingꢀ
Quantityꢀ
RohsꢀStatusꢀ
MDD1504RHꢀ
DꢁPAKꢀ
Tapeꢀ&ꢀReelꢀ
3000ꢀunitsꢀ
HalogenꢀFreeꢀ
ꢀ
ꢀ
ElectricalꢀCharacteristicsꢀ(TJꢀ=25oC)ꢀ
ꢀ
Characteristicsꢀ
Symbolꢀ
TestꢀConditionꢀ
Minꢀ
Typꢀ
Maxꢀ
Unitꢀ
StaticꢀCharacteristicsꢀ
ꢀ ꢀ DrainꢁSourceꢀBreakdownꢀVoltageꢀ
ꢀ ꢀ GateꢀThresholdꢀVoltageꢀ
BVDSS
ꢀ
ꢀ ꢀ IDꢀ=ꢀ250ꢂA,ꢀVGSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ250ꢂAꢀ
ꢀ ꢀ VDSꢀ=ꢀ30V,ꢀVGSꢀ=ꢀ0Vꢀ
ꢀ
30ꢀ
1.3ꢀ
ꢁꢀ
ꢁꢀ
1.9ꢀ
ꢁꢀ
ꢁꢀ
Vꢀ
VGS(th)
ꢀ
2.7ꢀ
1ꢀ
ꢀ ꢀ DrainꢀCutꢁOffꢀCurrentꢀ
ꢀ ꢀ GateꢀLeakageꢀCurrentꢀ
IDSS
ꢀ
TJ=55oCꢀ
ꢁꢀ
ꢁꢀ
5ꢀ
ꢂAꢀ
IGSS
ꢀ
ꢀ ꢀ VGSꢀ=ꢀ±20V,ꢀVDSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ13Aꢀ
ꢀ
ꢁꢀ
ꢁꢀ
±0.1ꢀ
12.7ꢀ
18.4ꢀ
18.8ꢀ
ꢁꢀ
ꢁꢀ
11.0ꢀ
16.0ꢀ
15.7ꢀ
27ꢀ
ꢀ ꢀ DrainꢁSourceꢀONꢀResistanceꢀ
RDS(ON)
ꢀ
TJ=125oCꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
mꢃꢀ
Sꢀ
ꢀ ꢀ VGSꢀ=ꢀ4.5V,ꢀIDꢀ=ꢀ11Aꢀ
ꢀ ꢀ VDSꢀ=ꢀ5V,ꢀIDꢀ=ꢀ10Aꢀ
ꢀ ꢀ ForwardꢀTransconductanceꢀ
DynamicꢀCharacteristicsꢀ
ꢀ ꢀ TotalꢀGateꢀChargeꢀ
gfsꢀ
Qg(10V)
ꢀ
7.3ꢀ
3.3ꢀ
ꢁꢀ
9.7ꢀ
4.5ꢀ
1.8ꢀ
3.3ꢀ
580ꢀ
57ꢀ
12.1ꢀ
5.6ꢀ
ꢁꢀ
ꢀ ꢀ TotalꢀGateꢀChargeꢀ
Qg(4.5V)
ꢀ
VDSꢀ=ꢀ15.0V,ꢀIDꢀ=ꢀ13A,ꢀ ꢀ
VGSꢀ=ꢀ10Vꢀ
nCꢀ
pFꢀ
ꢀ ꢀ GateꢁSourceꢀChargeꢀ
Qgsꢀ
ꢀ ꢀ GateꢁDrainꢀChargeꢀ
Qgdꢀ
ꢁꢀ
ꢁꢀ
ꢀ ꢀ InputꢀCapacitanceꢀ
Ciss
Crss
Coss
td(on)
trꢀ
td(off)
ꢀ
435ꢀ
43ꢀ
94ꢀ
ꢁꢀ
725ꢀ
71ꢀ
158ꢀ
ꢁꢀ
VDSꢀ=ꢀ15.0V,ꢀVGSꢀ=ꢀ0V,ꢀ ꢀ
fꢀ=ꢀ1.0MHzꢀ
ꢀ ꢀ ReverseꢀTransferꢀCapacitanceꢀ
ꢀ ꢀ OutputꢀCapacitanceꢀ
ꢀ
ꢀ
126ꢀ
6.7ꢀ
11.7ꢀ
13.5ꢀ
7.0ꢀ
6.6ꢀ
ꢀ ꢀ TurnꢁOnꢀDelayꢀTimeꢀ
ꢀ
ꢀ ꢀ RiseꢀTimeꢀ
ꢁꢀ
ꢁꢀ
VGSꢀ=ꢀ10V,ꢀVDSꢀ=ꢀ15.0V,ꢀ ꢀ
IDꢀ=ꢀ13Aꢀ,ꢀRGꢀ=ꢀ3.0ꢃꢀ
nsꢀ
ꢃꢀ
ꢀ ꢀ TurnꢁOffꢀDelayꢀTimeꢀ
ꢀ
ꢁꢀ
ꢁꢀ
ꢀ ꢀ FallꢀTimeꢀ
tfꢀ
ꢁꢀ
ꢁꢀ
ꢀ ꢀ GateꢀResistanceꢀ
Rgꢀ
f=1ꢀMHzꢀ
ꢁꢀ
8.5ꢀ
DrainꢁSourceꢀBodyꢀDiodeꢀCharacteristicsꢀ
ꢀ ꢀ SourceꢁDrainꢀDiodeꢀForwardꢀVoltageꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀTimeꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀChargeꢀ
VSD
ꢀ
ꢀ ꢀ ISꢀ=ꢀ13A,ꢀVGSꢀ=ꢀ0Vꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
0.87ꢀ
17.5ꢀ
9.8ꢀ
1.1ꢀ
26.3ꢀ
14.7ꢀ
Vꢀ
trrꢀ
nsꢀ
nCꢀ
ꢀ ꢀ IFꢀ=ꢀ13A,ꢀdl/dtꢀ=ꢀ100A/ꢂsꢀ
Qrrꢀ
ꢀ
Noteꢀ:ꢀ
ꢀ
1.ꢀ SurfaceꢀmountedꢀFRꢁ4ꢀboardꢀbyꢀJEDECꢀ(jesd51ꢁ7)ꢀ ꢀ
2.ꢀ EASꢀisꢀtestedꢀatꢀstartingꢀTjꢀ=ꢀ25℃,ꢀLꢀ=ꢀ0.1mH,ꢀIASꢀ=ꢀ12.0A,ꢀVDDꢀ=ꢀ27V,ꢀVGSꢀ=ꢀ10Vꢀ
3.ꢀ Tꢀ<ꢀ10sec.ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2
May.ꢀ2011.ꢀVersionꢀ1.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ ꢀ
ꢀ
ꢀ
40
30
20
10
0
28
VGSꢀ=ꢀ10V
4.0V
4.5V
24
20
16
12
8
3.5V
5.0V
VGSꢀ=ꢀ4.5V
VGSꢀ=ꢀ10V
3.0V
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
ID,ꢀDrainꢀCurrentꢀ[A]
Fig.2ꢀOnꢁResistanceꢀVariationꢀwithꢀ
DrainꢀCurrentꢀandꢀGateꢀVoltageꢀ
Fig.1ꢀOnꢁRegionꢀCharacteristicsꢀ
ꢀ
50
40
30
20
10
0
1.8
※ꢀNotesꢀ:
ꢀꢀꢀꢀꢀIDꢀ=ꢀ13.0A
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ10ꢀV
ꢀꢀꢀ2.ꢀIDꢀ=ꢀ13.0ꢀA
1.6
1.4
1.2
1.0
0.8
0.6
TAꢀ=ꢀ25℃
2
3
4
5
6
7
8
9
10
ꢁ50
ꢁ25
0
25
50
75
100
125
150
VGS,ꢀGateꢀtoꢀSourceꢀVolatgeꢀ[V]
TJ,ꢀJunctionꢀTemperatureꢀ[oC]
Fig.3ꢀOnꢁResistanceꢀVariationꢀwithꢀ
Temperatureꢀ
Fig.4ꢀOnꢁResistanceꢀVariationꢀwithꢀ
GateꢀtoꢀSourceꢀVoltageꢀ
ꢀ
20
16
12
8
※ꢁNotesꢁ:
ꢀꢁꢁꢁꢁꢁVGSꢁ=ꢁ0V
※ꢁNotesꢁ:
ꢁꢁꢁꢁꢁꢁVDSꢁ=ꢁ5V
101
TA=25℃
TA=25℃
100
4
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
1
2
3
4
5
VSD,ꢀSourceꢁDrainꢀvoltageꢀ[V]
VGS,ꢀGateꢁSourceꢀVoltageꢀ[V]
Fig.5ꢀTransferꢀCharacteristicsꢀ
ꢀ
Fig.6ꢀBodyꢀDiodeꢀForwardꢀVoltageꢀ
VariationꢀwithꢀSourceꢀCurrentꢀandꢀ
Temperatureꢀ
ꢀ
ꢀ
3
May.ꢀ2011.ꢀVersionꢀ1.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
May.ꢀ2011.ꢀVersionꢀ1.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢁ ꢁ
ꢀ
ꢀ
ꢀ
ꢀ
800
10
8
C
issꢀ=ꢀCgsꢀ+ꢀCgdꢀ(Cdsꢀ=ꢀshorted)
Cossꢀ=ꢀCdsꢀ+ꢀCgd
rssꢀ=ꢀCgd
※ꢁNoteꢁ:ꢁIDꢁ=ꢁ13A
VDSꢁ=ꢁ15V
C
C
iss
600
400
200
0
6
4
※ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀfꢀ=ꢀ1ꢀMHz
Coss
2
C
rss
0
0
5
10
15
20
25
30
0
2
4
6
8
10
QG,ꢀTotalꢀGateꢀChargeꢀ[nC]
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.7ꢁGateꢁChargeꢁCharacteristicsꢁ
Fig.8ꢁCapacitanceꢁCharacteristicsꢁ
ꢀ
40
35
30
25
20
15
10
5
OperationꢁinꢁThisꢁAreaꢁ
isꢁLimitedꢁbyꢁRꢁDS(on)
1ꢀms
102
10ꢀms
100ꢀms
101
100
10ꢁ1
1s
10s
DC
SingleꢁPulse
TJ=Maxꢁrated
TC=25℃
0
10ꢁ1
100
101
102
25
50
75
100
125
150
TA,ꢀCaseꢀTemperatureꢀ[℃]
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.10ꢁ Maximumꢁ Drainꢁ Currentꢁ vs.ꢁ
CaseꢁTemperatureꢁ
Fig.9ꢁMaximumꢁSafeꢁOperatingꢁAreaꢁ
ꢀ
1
10
D=0.5
0.2
0
10
0.1
0.05
0.02
ꢁ1
10
0.01
singleꢀpulse
ꢁ2
※ꢀNotesꢀ:
10
ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t1/t2
ꢀꢀꢀꢀꢀꢀPEAKꢀT ꢀ=ꢀPDMꢀ*ꢀZ ꢀ*ꢀRθ (t)ꢀ+ꢀTC
J
θ
JC
JC
ꢁ3
10
ꢁ4
10
ꢁ3
10
ꢁ2
10
ꢁ1
10
2
10
3
10
100
101
t1,ꢀRectangularꢀPulseꢀDurationꢀ[sec]
Fig.11ꢁ Transientꢁ Thermalꢁ Responseꢁ
Curveꢁ
ꢀ
ꢀ
4
ꢀ
ꢁ ꢁ
ꢀ
ꢁ ꢁ
ꢀ
PackageꢁDimensionꢁ
ꢀ
ꢀ
ꢀ
DꢂPAKꢁ(TOꢂ252)ꢁ
ꢁ
ꢁ
Dimensionsꢁareꢁinꢁmillimeters,ꢁunlessꢁotherwiseꢁspecifiedꢁ
ꢀ
ꢀ
ꢀ
ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
5
May.ꢀ2011.ꢀVersionꢀ1.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢁ ꢁ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
DISCLAIMER:ꢁ
ꢀ
TheꢀProductsꢀareꢀnotꢀdesignedꢀforꢀuseꢀinꢀhostileꢀenvironments,ꢀincluding,ꢀwithoutꢀlimitation,ꢀaircraft,ꢀnuclearꢀpowerꢀ
generation,ꢀ medicalꢀ appliances,ꢀ andꢀ devicesꢀ orꢀ systemsꢀinꢀ whichꢀ malfunctionꢀ ofꢀ anyꢀ Productꢀ canꢀ reasonablyꢀ beꢀ
expectedꢀ toꢀ resultꢀ inꢀ aꢀ personalꢀ injury.ꢀꢀ Seller’sꢀ customersꢀ usingꢀ orꢀ sellingꢀ Seller’sꢀ productsꢀ forꢀ useꢀ inꢀ suchꢀ
applicationsꢀdoꢀsoꢀatꢀtheirꢀownꢀriskꢀandꢀagreeꢀtoꢀfullyꢀdefendꢀandꢀindemnifyꢀSeller.ꢀ
ꢀ
ꢀ
MagnaChipꢀreservesꢀtheꢀrightꢀtoꢀchangeꢀtheꢀspecificationsꢀandꢀcircuitryꢀwithoutꢀnoticeꢀatꢀanyꢀtime.ꢀMagnaChipꢀdoesꢀnotꢀconsiderꢀresponsibilityꢀ
forꢀ useꢀ ofꢀ anyꢀ circuitryꢀ otherꢀ thanꢀ circuitryꢀ entirelyꢀ includedꢀ inꢀ aꢀ MagnaChipꢀ product.ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ isꢀ aꢀ registeredꢀ trademarkꢀ ofꢀ MagnaChipꢀ
SemiconductorꢀLtd.ꢀ ꢀ
ꢀ
6
May.ꢀ2011.ꢀVersionꢀ1.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
相关型号：
©2020 ICPDF网 联系我们和版权申明