MDP13N50B [MGCHIP]
N-Channel MOSFET 500V, 13.0 A, 0.5(ohm);
| 型号： | MDP13N50B |
| 厂家： | 
MagnaChip |
| 描述： | N-Channel MOSFET 500V, 13.0 A, 0.5(ohm) |
| 文件： | 总8页 (文件大小：1215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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MDP13N50Bꢀ/ꢀMDF13N50B
ꢀ NꢁChannelꢀMOSFETꢀ500V,ꢀ13.0ꢀA,ꢀ0.5ꢂ
GeneralꢀDescriptionꢀ
Featuresꢀ
ꢀ
ꢀ
TheꢀMDP/F13N50BꢀusesꢀadvancedꢀMagnachip’sꢀ
ꢀꢀVDSꢀ=ꢀ500Vꢀ
MOSFETꢀTechnology,ꢀwhichꢀprovidesꢀlowꢀonꢁstateꢀ
ꢀꢀIDꢀ=ꢀ13.0Aꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ @VGSꢀ=ꢀ10Vꢀ
ꢀꢀRDS(ON)ꢀ≤ꢀ0.5ꢀꢀ ꢀ ꢀ @VGSꢀ=ꢀ10Vꢀ
resistance,ꢀhighꢀswitchingꢀperformanceꢀandꢀ
excellentꢀquality.ꢀ
ꢀ
MDP/F13N50BꢀisꢀsuitableꢀdeviceꢀforꢀSMPS,ꢀHIDꢀ
Applicationsꢀ
andꢀgeneralꢀpurposeꢀapplications.ꢀ
ꢀ
ꢀ
ꢀꢀPowerꢀSupplyꢀ
ꢀꢀPFCꢀ
ꢀꢀBallastꢀ
ꢀ
ꢀ
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ
ꢀ
Characteristicsꢀ
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ
Symbolꢀ
MDP13N50Bꢀ MDF13N50Bꢀ
Unitꢀ
Vꢀ
VDSS
ꢀ
ꢀ
500ꢀ
±30ꢀ
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ
VGSS
Vꢀ
ꢀ TC=25oCꢀ
13ꢀ
8.2ꢀ
52ꢀ
13*ꢀ
8.2*ꢀ
52*ꢀ
41ꢀ
Aꢀ
ꢀ ContinuousꢀDrainꢀCurrentꢀ
IDꢀ
ꢀ TC=100oCꢀ
Aꢀ
ꢀ ꢀ PulsedꢀDrainꢀCurrent(1)
ꢀ ꢀ PowerꢀDissipationꢀ
ꢀ
IDM
ꢀ
Aꢀ
ꢀ TC=25oCꢀ
187ꢀ
1.49ꢀ
Wꢀ
PDꢀ
Derateꢀaboveꢀ25ꢀoCꢀ
0.33ꢀ
W/ꢀoCꢀ
mJꢀ
V/nsꢀ
mJꢀ
RepetitiveꢀAvalancheꢀEnergy(1)ꢀ ꢀ
ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt(3)
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy(4)
EAR
dv/dtꢀ
EAS
ꢀ
18.7ꢀ
4.5ꢀ
ꢀ
ꢀ
ꢀ
580ꢀ
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ
TJ,ꢀTstg
ꢀ
ꢀ
ꢁ55~150ꢀ
oCꢀ
ꢀ
ꢀ
※ꢀ Idꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperatureꢀ
ꢀ
ꢀ
ꢀ
ThermalꢀCharacteristicsꢀ
ꢀ
Characteristicsꢀ
Symbolꢀ
RθJA
RθJC
MDP13N50Bꢀ MDF13N50Bꢀ
Unitꢀ
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)
ThermalꢀResistance,ꢀJunctionꢁtoꢁCase(1)
ꢀ
ꢀ
62.5ꢀ
0.67ꢀ
62.5ꢀ
3.05ꢀ
oC/Wꢀ
ꢀ
ꢀ
ꢀ
1
Decꢀ2011.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
OrderingꢀInformationꢀ
ꢀ
PartꢀNumberꢀ
MDP13N50BTHꢀ
MDF13N50BTHꢀ
Temp.ꢀRangeꢀ
ꢁ55~150oCꢀ
ꢁ55~150oCꢀ
Packageꢀ
TOꢁ220ꢀ
Packingꢀ
Tubeꢀ
RoHSꢀStatusꢀ
HalogenꢀFreeꢀ
HalogenꢀFreeꢀ
TOꢁ220Fꢀ
Tubeꢀ
ꢀ
ꢀ
ꢀ
ElectricalꢀCharacteristicsꢀ(Taꢀ=ꢀ25oC)ꢀ
ꢀ
Characteristicsꢀ
StaticꢀCharacteristicsꢀ
Symbolꢀ
TestꢀConditionꢀ
Minꢀ
Typꢀ
Maxꢀ
Unitꢀ
ꢀ ꢀ DrainꢁSourceꢀBreakdownꢀVoltageꢀ
ꢀ ꢀ GateꢀThresholdꢀVoltageꢀ
ꢀ ꢀ DrainꢀCutꢁOffꢀCurrentꢀ
ꢀ ꢀ GateꢀLeakageꢀCurrentꢀ
ꢀ ꢀ DrainꢁSourceꢀONꢀResistanceꢀ
ꢀ ꢀ ForwardꢀTransconductanceꢀ
DynamicꢀCharacteristicsꢀ
ꢀ ꢀ TotalꢀGateꢀChargeꢀ
BVDSS
VGS(th)
ꢀ
ꢀ ꢀ IDꢀ=ꢀ250ꢂA,ꢀVGSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ250ꢂAꢀ
ꢀ ꢀ VDSꢀ=ꢀ500V,ꢀVGSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VGSꢀ=ꢀ±30V,ꢀVDSꢀ=ꢀ0Vꢀ
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ6.5Aꢀ
500ꢀ
2.0ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
4.0ꢀ
1ꢀ
Vꢀ
ꢀ
IDSS
ꢀ
ꢀ
ꢁꢀ
ꢂAꢀ
nAꢀ
ꢃꢀ
IGSS
ꢁꢀ
ꢁꢀ
100ꢀ
0.5ꢀ
ꢁꢀ
RDS(ON)
gfsꢀ
ꢀ
ꢁꢀ
0.39ꢀ
ꢀ ꢀ ꢀ 13ꢀ
ꢀ ꢀ VDSꢀ=ꢀ40V,ꢀIDꢀ=ꢀ6.5Aꢀ
ꢁꢀ
Sꢀ
Qgꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
27ꢀ
6.3ꢀ
8.6ꢀ
1459ꢀ
7.4ꢀ
174ꢀ
21ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢀ ꢀ GateꢁSourceꢀChargeꢀ
ꢀ ꢀ GateꢁDrainꢀChargeꢀ
Qgsꢀ
ꢀ VDSꢀ=ꢀ400V,IDꢀ=ꢀ13.0A,VGSꢀ=ꢀ10V(3)
ꢀ VDSꢀ=ꢀ25V,ꢀVGSꢀ=ꢀ0V,ꢀfꢀ=ꢀ1.0MHzꢀ
ꢀ
nCꢀ
pFꢀ
Qgd
ꢀ
ꢀ
ꢀ ꢀ InputꢀCapacitanceꢀ
Ciss
ꢀ ꢀ ReverseꢀTransferꢀCapacitanceꢀ
ꢀ ꢀ OutputꢀCapacitanceꢀ
Crssꢀ
Coss
td(on)
trꢀ
ꢀ
ꢀ ꢀ TurnꢁOnꢀ ꢀ DelayꢀTimeꢀ
ꢀ ꢀ RiseꢀTimeꢀ
ꢀ
47ꢀ
VGSꢀ=ꢀ10V,ꢀVDSꢀ=ꢀ250V,ꢀIDꢀ=ꢀ13.0A,ꢀ
nsꢀ
RGꢀ=ꢀ25ꢃ(3)
ꢀ
ꢀ ꢀ TurnꢁOffꢀDelayꢀTimeꢀ
td(off)
ꢀ
131ꢀ
54ꢀ
ꢀ ꢀ FallꢀTimeꢀ
tfꢀ
DrainꢁSourceꢀBodyꢀDiodeꢀCharacteristicsꢀ
MaximumꢀContinuousꢀDrainꢀtoꢀSourceꢀ
DiodeꢀForwardꢀCurrentꢀ
ISꢀ
ꢀ
ꢁꢀ
13ꢀ
ꢁꢀ
Aꢀ
ꢀ ꢀ SourceꢁDrainꢀDiodeꢀForwardꢀVoltageꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀTimeꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀChargeꢀ
VSD
trrꢀ
ꢀ
ꢀ ꢀ ISꢀ=ꢀ13.0A,ꢀVGSꢀ=ꢀ0Vꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
1.4ꢀ
ꢁꢀ
Vꢀ
325ꢀ
2.9ꢀ
nsꢀ
ꢂCꢀ
ꢀ ꢀ IFꢀ=ꢀ13.0A,ꢀdl/dtꢀ=ꢀ100A/ꢂs(3)
ꢀ
Qrrꢀ
ꢁꢀ
ꢀ
Noteꢀ:ꢀ
1.ꢀPulseꢀwidthꢀisꢀbasedꢀonꢀRθJCꢀ&ꢀRθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀ
2.ꢀPulseꢀtest:ꢀpulseꢀwidthꢀ≤300us,ꢀdutyꢀcycle≤2%,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=150°C.ꢀ
3.ꢀISDꢀ≤13.0A,ꢀdi/dt≤200A/us,ꢀV ≤BVDSS,ꢀRgꢀ=25ꢃ,ꢀStartingꢀTJ=25°Cꢀ
DD
4.ꢀL=6.2mH,ꢀIAS=13.0A,ꢀVDD=50V,ꢀ,ꢀRgꢀ=25ꢃ,ꢀStartingꢀTJ=25°Cꢀ ꢀ
ꢀ
ꢀ
ꢀ
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2
Decꢀ2011.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
ꢀ
35
30
25
20
15
10
5
1.00
0.75
0.50
0.25
ꢀVgs=5.0V
ꢀꢀꢀꢀꢀꢀ=5.5V
ꢀꢀꢀꢀꢀꢀ=6.0V
ꢀꢀꢀꢀꢀꢀ=7.0V
ꢀꢀꢀꢀꢀꢀ=8.0V
ꢀꢀꢀꢀꢀꢀ=10.0V
ꢀꢀꢀꢀꢀꢀ=15.0V
Notesꢀꢀ
ꢀ1.ꢀ250
ꢀ2.ꢀTC=25
µ
sꢀPulseꢀTest
℃
VGS=10V
VGS=20V
0
0
5
10
15
20
25
5
10
15
20
25
30
VDS,DrainꢁSourceꢀVoltageꢀ[V]
ID,DrainꢀCurrentꢀ[A]
Fig.2ꢀOnꢁResistanceꢀVariationꢀwithꢀ
DrainꢀCurrentꢀandꢀGateꢀVoltageꢀ
Fig.1ꢀOnꢁRegionꢀCharacteristicsꢀ
ꢀ
ꢀ
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀIDꢀꢀꢀꢀ=ꢀ250㎂
※
ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ10ꢀV
ꢀꢀꢀ2.ꢀIDꢀꢀꢀ=ꢀ5.0A
1.1
1.0
0.9
0.8
ꢁ50
0
50
100
150
200
ꢁ50
0
50
100
150
200
TJ,ꢀJunctionꢀTemperatureꢀ[oC]
TJ,ꢀJunctionꢀTemperatureꢀ[oC]
Fig.3ꢀOnꢁResistanceꢀVariationꢀwithꢀ
Temperatureꢀ
Fig.4ꢀ Breakdownꢀ Voltageꢀ Variationꢀ vs.ꢀ
Temperatureꢀ
ꢀ
ꢀ
※
ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.250 sꢀPulseꢀtest
*ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVds=30V
µ
10
10
150℃
ꢁ55℃
150℃
25℃
25℃
1
1
0.1
0.1
0.2
3
4
5
6
7
0.4
0.6
0.8
1.0
1.2
VGSꢀ[V]
VSD,ꢀSourceꢁDrainꢀVoltageꢀ[V]
Fig.5ꢀTransferꢀCharacteristicsꢀ
ꢀ
Fig.6ꢀBodyꢀDiodeꢀForwardꢀVoltageꢀ
VariationꢀwithꢀSourceꢀCurrentꢀandꢀ
Temperatureꢀ
ꢀ
ꢀ
ꢀ
3
Decꢀ2011.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
ꢀ
1400
1200
1000
800
600
400
200
0
10
8
C
issꢀ=ꢀCgsꢀ+ꢀCgdꢀ(Cdsꢀ=ꢀshorted)
Cossꢀ=ꢀCdsꢀ+ꢀCgd
Crssꢀ=ꢀCgd
※
ꢀNoteꢀ:ꢀIDꢀ=ꢀ13.0A
Coss
100V
250V
400V
※ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀfꢀ=ꢀ1ꢀMHz
6
Ciss
4
Crss
2
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
1
10
QG,ꢀTotalꢀGateꢀChargeꢀ[nC]
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.7ꢀGateꢀChargeꢀCharacteristicsꢀ
Fig.8ꢀCapacitanceꢀCharacteristicsꢀ
ꢀ
102
14
10ꢀµs
OperationꢀinꢀThisꢀAreaꢀ
isꢀLimitedꢀbyꢀRꢀDS(on)
12
10
8
100ꢀµs
1ꢀms
10ꢀms
101
100
100ꢀms
DC
6
4
10ꢁ1
SingleꢀPulse
2
TJ=Maxꢀrated
TC=25℃
10ꢁ2
10ꢁ1
0
25
100
101
102
50
75
100
125
150
TC,ꢀCaseꢀTemperatureꢀ[℃]
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.9ꢀMaximumꢀSafeꢀOperatingꢀAreaꢀ
MDP13N50Bꢀ(TOꢁ220)ꢀ
Fig.10ꢀMaximumꢀDrainꢀCurrentꢀvs.ꢀCaseꢀ
Temperatureꢀ
ꢀ
ꢀ
100
24000
22000
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
singleꢀPulse
RthJCꢀ=ꢀ0.67℃/W
TCꢀ=ꢀ25℃
D=0.5
0.2
10ꢁ1
0.1
0.05
0.02
0.01
※ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t1/t2
ꢀꢀꢀꢀꢀꢀPEAKꢀTJꢀ=ꢀPDMꢀ*ꢀZθ ꢀ*ꢀRθ (t)ꢀ+ꢀTC
JC
JC
ꢀꢀꢀꢀꢀꢀRΘ =0.67℃/W
JC
singleꢀpulse
10ꢁ3
10ꢁ2
10ꢁ5
10ꢁ4
10ꢁ2
10ꢁ1
100
101
1Eꢁ5
1Eꢁ4
1Eꢁ3
0.01
0.1
1
10
t1,ꢀRectangularꢀPulseꢀDurationꢀ[sec]
PulseꢀWidthꢀ(s)
Fig.12ꢀSingleꢀPulseꢀMaximumꢀPowerꢀ
Dissipationꢀ–ꢀMDP13N50Bꢀ(TOꢁ220)ꢀ
Fig.11ꢀTransientꢀThermalꢀResponseꢀCurveꢀ
MDP13N50Bꢀ(TOꢁ220)ꢀ
ꢀ
ꢀ
ꢀ
4
Decꢀ2011.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
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ꢀ
102
101
100
10ꢁ1
10ꢁ2
14000
12000
10000
8000
6000
4000
2000
0
10ꢀµs
singleꢀPulse
thJCꢀ=ꢀ3.0℃/W
TCꢀ=ꢀ25℃
OperationꢀinꢀThisꢀAreaꢀ
isꢀLimitedꢀbyꢀRꢀDS(on)
R
100ꢀµs
1ꢀms
10ꢀms
100ꢀms
DC
SingleꢀPulse
TJ=Maxꢀrated
TC=25℃
10ꢁ1
100
101
102
1Eꢁ5
1Eꢁ4
1Eꢁ3
0.01
0.1
1
10
PulseꢀWidthꢀ(s)
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.14ꢀSingleꢀPulseꢀMaximumꢀPowerꢀ
Dissipationꢀ–ꢀMDF13N50Bꢀ(TOꢁ220F)ꢀ
Fig.13ꢀMaximumꢀSafeꢀOperatingꢀAreaꢀ
MDF13N50Bꢀ(TOꢁ220F)ꢀ
ꢀ
100
10ꢁ1
10ꢁ2
D=0.5
0.2
0.1
0.05
0.02
0.01
※ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t1/t2
ꢀꢀꢀꢀꢀꢀPEAKꢀTJꢀ=ꢀPDMꢀ*ꢀZθ ꢀ*ꢀRθ (t)ꢀ+ꢀTC
JC
JC
ꢀꢀꢀꢀꢀꢀRΘ =3.0℃/W
JC
singleꢀpulse
10ꢁ3
10ꢁ5
10ꢁ4
10ꢁ2
10ꢁ1
100
101
t1,ꢀRectangularꢀPulseꢀDurationꢀ[sec]
Fig.15ꢀTransientꢀThermalꢀResponseꢀCurveꢀ
MDF13N50Bꢀ(TOꢁ220F)ꢀ
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ꢀ
ꢀ
Dimensionsꢀareꢀinꢀmillimetersꢀunlessꢀotherwiseꢀspecifiedꢀ
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Symbol
Min
4.50
0.63
1.15
0.33
15.47
9.60
Nom
Max
4.93
0.91
1.47
0.63
A
b
b1
C
D
E
e
F
G
L
16.13
10.71
2.54
2.34
6.48
12.24
2.79
2.52
3.10
3.00
2.84
6.90
13.72
3.67
2.96
3.50
3.55
L1
Q
Q1
￠R
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