MDP18N50B [MGCHIP]
N-Channel MOSFET 500V, 18.0 A, 0.27(ohm);
| 型号： | MDP18N50B |
| 厂家： | 
MagnaChip |
| 描述： | N-Channel MOSFET 500V, 18.0 A, 0.27(ohm) |
| 文件： | 总8页 (文件大小：1250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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MDP18N50Bꢀ/ꢀMDF18N50B
ꢀ NꢁChannelꢀMOSFETꢀ500V,ꢀ18.0ꢀA,ꢀ0.27ꢂ
GeneralꢀDescriptionꢀ
Featuresꢀ
ꢀ
ꢀ
TheꢀMDP/F18N50BꢀusesꢀadvancedꢀMagnachip’sꢀ
ꢀꢀVDSꢀ=ꢀ500Vꢀ
MOSFETꢀTechnology,ꢀwhichꢀprovidesꢀlowꢀonꢁstateꢀ
ꢀꢀIDꢀ=ꢀ18.0Aꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ @VGSꢀ=ꢀ10Vꢀ
ꢀꢀRDS(ON)ꢀ≤ꢀ0.27ꢀꢀ ꢀ ꢀ @VGSꢀ=ꢀ10Vꢀ
resistance,ꢀhighꢀswitchingꢀperformanceꢀandꢀ
excellentꢀquality.ꢀ
ꢀ
MDP/F18N50BꢀisꢀsuitableꢀdeviceꢀforꢀSMPS,ꢀHIDꢀ
Applicationsꢀ
andꢀgeneralꢀpurposeꢀapplications.ꢀ
ꢀ
ꢀ
ꢀꢀPowerꢀSupplyꢀ
ꢀꢀPFCꢀ
ꢀꢀBallastꢀ
ꢀ
ꢀ
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ
ꢀ
Characteristicsꢀ
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ
Symbolꢀ
MDP18N50Bꢀ MDF18N50Bꢀ
Unitꢀ
Vꢀ
VDSS
ꢀ
ꢀ
500ꢀ
±30ꢀ
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ
VGSS
Vꢀ
ꢀ TC=25oCꢀ
18ꢀ
11ꢀ
18*ꢀ
11*ꢀ
72*ꢀ
37ꢀ
Aꢀ
ꢀ ContinuousꢀDrainꢀCurrentꢀ
IDꢀ
ꢀ TC=100oCꢀ
Aꢀ
ꢀ ꢀ PulsedꢀDrainꢀCurrent(1)
ꢀ ꢀ PowerꢀDissipationꢀ
ꢀ
IDM
ꢀ
72ꢀ
Aꢀ
ꢀ TC=25oCꢀ
236ꢀ
1.89ꢀ
Wꢀ
PDꢀ
Derateꢀaboveꢀ25ꢀoCꢀ
0.29ꢀ
W/ꢀoCꢀ
mJꢀ
V/nsꢀ
mJꢀ
RepetitiveꢀAvalancheꢀEnergy(1)ꢀ ꢀ
ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt(3)
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy(4)
EAR
dv/dtꢀ
EAS
ꢀ
23.6ꢀ
4.5ꢀ
ꢀ
ꢀ
ꢀ
950ꢀ
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ
TJ,ꢀTstg
ꢀ
ꢀ
ꢁ55~150ꢀ
oCꢀ
ꢀ
ꢀ
※ꢀ Idꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperatureꢀ
ꢀ
ꢀ
ꢀ
ThermalꢀCharacteristicsꢀ
ꢀ
Characteristicsꢀ
Symbolꢀ
RθJA
RθJC
MDP18N50Bꢀ MDF18N50Bꢀ
Unitꢀ
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)
ThermalꢀResistance,ꢀJunctionꢁtoꢁCase(1)
ꢀ
ꢀ
62.5ꢀ
0.53ꢀ
62.5ꢀ
3.4ꢀ
oC/Wꢀ
ꢀ
ꢀ
ꢀ
1
Decꢀ2011.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
OrderingꢀInformationꢀ
ꢀ
PartꢀNumberꢀ
MDP18N50BTHꢀ
MDF18N50BTHꢀ
Temp.ꢀRangeꢀ
ꢁ55~150oCꢀ
ꢁ55~150oCꢀ
Packageꢀ
TOꢁ220ꢀ
Packingꢀ
Tubeꢀ
RoHSꢀStatusꢀ
HalogenꢀFreeꢀ
HalogenꢀFreeꢀ
TOꢁ220Fꢀ
Tubeꢀ
ꢀ
ꢀ
ꢀ
ElectricalꢀCharacteristicsꢀ(Taꢀ=ꢀ25oC)ꢀ
ꢀ
Characteristicsꢀ
StaticꢀCharacteristicsꢀ
Symbolꢀ
TestꢀConditionꢀ
Minꢀ
Typꢀ
Maxꢀ
Unitꢀ
ꢀ ꢀ DrainꢁSourceꢀBreakdownꢀVoltageꢀ
ꢀ ꢀ GateꢀThresholdꢀVoltageꢀ
ꢀ ꢀ DrainꢀCutꢁOffꢀCurrentꢀ
ꢀ ꢀ GateꢀLeakageꢀCurrentꢀ
ꢀ ꢀ DrainꢁSourceꢀONꢀResistanceꢀ
ꢀ ꢀ ForwardꢀTransconductanceꢀ
DynamicꢀCharacteristicsꢀ
ꢀ ꢀ TotalꢀGateꢀChargeꢀ
BVDSS
VGS(th)
ꢀ
ꢀ ꢀ IDꢀ=ꢀ250ꢂA,ꢀVGSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ250ꢂAꢀ
ꢀ ꢀ VDSꢀ=ꢀ500V,ꢀVGSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VGSꢀ=ꢀ±30V,ꢀVDSꢀ=ꢀ0Vꢀ
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ9Aꢀ
500ꢀ
2.0ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
4.0ꢀ
1ꢀ
Vꢀ
ꢀ
IDSS
ꢀ
ꢀ
ꢁꢀ
ꢂAꢀ
nAꢀ
ꢃꢀ
IGSS
ꢁꢀ
ꢁꢀ
100ꢀ
0.27ꢀ
ꢁꢀ
RDS(ON)
gfsꢀ
ꢀ
ꢁꢀ
0.22ꢀ
ꢀ ꢀ ꢀ 13ꢀ
ꢀ ꢀ VDSꢀ=ꢀ40V,ꢀIDꢀ=ꢀ9Aꢀ
ꢁꢀ
Sꢀ
Qgꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
48ꢀ
10ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢀ ꢀ GateꢁSourceꢀChargeꢀ
ꢀ ꢀ GateꢁDrainꢀChargeꢀ
Qgsꢀ
ꢀ VDSꢀ=ꢀ400V,IDꢀ=ꢀ18.0A,VGSꢀ=ꢀ10V(3)
ꢀ VDSꢀ=ꢀ25V,ꢀVGSꢀ=ꢀ0V,ꢀfꢀ=ꢀ1.0MHzꢀ
ꢀ
nCꢀ
pFꢀ
Qgd
ꢀ
ꢀ
15ꢀ
ꢀ ꢀ InputꢀCapacitanceꢀ
Ciss
2490ꢀ
13ꢀ
ꢀ ꢀ ReverseꢀTransferꢀCapacitanceꢀ
ꢀ ꢀ OutputꢀCapacitanceꢀ
Crssꢀ
Coss
td(on)
trꢀ
ꢀ
307ꢀ
32ꢀ
ꢀ ꢀ TurnꢁOnꢀ ꢀ DelayꢀTimeꢀ
ꢀ ꢀ RiseꢀTimeꢀ
ꢀ
82ꢀ
VGSꢀ=ꢀ10V,ꢀVDSꢀ=ꢀ250V,ꢀIDꢀ=ꢀ18.0A,ꢀ
nsꢀ
RGꢀ=ꢀ25ꢃ(3)
ꢀ
ꢀ ꢀ TurnꢁOffꢀDelayꢀTimeꢀ
td(off)
ꢀ
222ꢀ
75ꢀ
ꢀ ꢀ FallꢀTimeꢀ
tfꢀ
DrainꢁSourceꢀBodyꢀDiodeꢀCharacteristicsꢀ
MaximumꢀContinuousꢀDrainꢀtoꢀSourceꢀ
DiodeꢀForwardꢀCurrentꢀ
ISꢀ
ꢀ
ꢁꢀ
18ꢀ
ꢁꢀ
Aꢀ
ꢀ ꢀ SourceꢁDrainꢀDiodeꢀForwardꢀVoltageꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀTimeꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀChargeꢀ
VSD
trrꢀ
ꢀ
ꢀ ꢀ ISꢀ=ꢀ18.0A,ꢀVGSꢀ=ꢀ0Vꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
1.4ꢀ
ꢁꢀ
Vꢀ
375ꢀ
4.2ꢀ
nsꢀ
ꢂCꢀ
ꢀ ꢀ IFꢀ=ꢀ18.0A,ꢀdl/dtꢀ=ꢀ100A/ꢂs(3)
ꢀ
Qrrꢀ
ꢁꢀ
ꢀ
Noteꢀ:ꢀ
1.ꢀPulseꢀwidthꢀisꢀbasedꢀonꢀRθJCꢀ&ꢀRθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀ
2.ꢀPulseꢀtest:ꢀpulseꢀwidthꢀ≤300us,ꢀdutyꢀcycle≤2%,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=150°C.ꢀ
3.ꢀISDꢀ≤18.0A,ꢀdi/dt≤200A/us,ꢀV ≤BVDSS,ꢀRgꢀ=25ꢃ,ꢀStartingꢀTJ=25°Cꢀ
DD
4.ꢀL=5.3mH,ꢀIAS=18.0A,ꢀVDD=50V,ꢀ,ꢀRgꢀ=25ꢃ,ꢀStartingꢀTJ=25°Cꢀ ꢀ
ꢀ
ꢀ
ꢀ
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2
Decꢀ2011.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
ꢀ
35
30
25
20
15
10
5
0.6
0.5
0.4
0.3
ꢀV =5.0V
gs
Notesꢀꢀ
ꢀ1.ꢀ250? ꢀPulseꢀTest
ꢀꢀꢀꢀꢀꢀ=5.5V
ꢀꢀꢀꢀꢀꢀ=6.0V
ꢀꢀꢀꢀꢀꢀ=7.0V
ꢀꢀꢀꢀꢀꢀ=8.0V
ꢀꢀꢀꢀꢀꢀ=10.0V
ꢀꢀꢀꢀꢀꢀ=15.0V
ꢀ2.ꢀT =25?
C
VGS=10.0V
VGS=20V
0
0
5
10
15
20
25
10
15
20
25
30
35
40
45
50
55
V ,DrainꢁSourceꢀVoltageꢀ[V]
ID,DrainꢀCurrentꢀ[A]
DS
Fig.2ꢀOnꢁResistanceꢀVariationꢀwithꢀ
DrainꢀCurrentꢀandꢀGateꢀVoltageꢀ
Fig.1ꢀOnꢁRegionꢀCharacteristicsꢀ
ꢀ
ꢀ
1.2
3.0
※ꢀNotesꢀ:
※
ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ10ꢀV
ꢀꢀꢀ2.ꢀIDꢀꢀꢀ=ꢀ5.0A
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀIDꢀꢀꢀꢀ=ꢀ250㎂
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
0.8
ꢁ50
0
50
100
150
200
ꢁ50
0
50
100
150
200
TJ,ꢀJunctionꢀTemperatureꢀ[oC]
TJ,ꢀJunctionꢀTemperatureꢀ[oC]
Fig.3ꢀOnꢁResistanceꢀVariationꢀwithꢀ
Temperatureꢀ
Fig.4ꢀ Breakdownꢀ Voltageꢀ Variationꢀ vs.ꢀ
Temperatureꢀ
ꢀ
ꢀ
100
10
1
※
ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.250 sꢀPulseꢀtest
*ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVds=30V
µ
10
150℃
25
℃
150
℃
1
ꢁ55℃
25
℃
0.1
0.1
0.2
2
3
4
5
6
7
8
0.4
0.6
0.8
1.0
1.2
VSD,ꢀSourceꢁDrainꢀVoltageꢀ[V]
VGSꢀ[V]
Fig.5ꢀTransferꢀCharacteristicsꢀ
ꢀ
Fig.6ꢀBodyꢀDiodeꢀForwardꢀVoltageꢀ
VariationꢀwithꢀSourceꢀCurrentꢀandꢀ
Temperatureꢀ
ꢀ
ꢀ
ꢀ
3
Decꢀ2011.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
ꢀ
10
8
Cissꢀ=ꢀCgsꢀ+ꢀCgdꢀ(Cdsꢀ=ꢀshorted)
Cossꢀ=ꢀCdsꢀ+ꢀCgd
Crssꢀ=ꢀCgd
5000
4000
3000
2000
1000
0
※
ꢀNoteꢀ:ꢀIDꢀ=ꢀ18.0A
100V
250V
400V
Coss
※
ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀfꢀ=ꢀ1ꢀMHz
6
Ciss
4
2
Crss
0
1
10
0
10
20
30
40
50
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
QG,ꢀTotalꢀGateꢀChargeꢀ[nC]
Fig.7ꢀGateꢀChargeꢀCharacteristicsꢀ
Fig.8ꢀCapacitanceꢀCharacteristicsꢀ
ꢀ
102
20
18
16
14
12
10
8
OperationꢀinꢀThisꢀAreaꢀ
isꢀLimitedꢀbyꢀRꢀDS(on)
10ꢀµs
100ꢀµs
1ꢀms
10ꢀms
100ꢀms
DC
101
100
6
10ꢁ1
4
SingleꢀPulse
TJ=Maxꢀrated
TC=25℃
2
10ꢁ2
10ꢁ1
0
25
100
101
102
50
75
100
125
150
TC,ꢀCaseꢀTemperatureꢀ[℃]
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.9ꢀMaximumꢀSafeꢀOperatingꢀAreaꢀ
MDP18N50Bꢀ(TOꢁ220)ꢀ
Fig.10ꢀMaximumꢀDrainꢀCurrentꢀvs.ꢀCaseꢀ
Temperatureꢀ
ꢀ
ꢀ
100
30000
singleꢀPulse
27000
24000
21000
18000
15000
12000
9000
6000
3000
0
RthJCꢀ=ꢀ0.53℃/W
TCꢀ=ꢀ25℃
D=0.5
0.2
10ꢁ1
0.1
0.05
※ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t1/t2
ꢀꢀꢀꢀꢀꢀPEAKꢀTJꢀ=ꢀPDMꢀ*ꢀZθ ꢀ*ꢀRθ (t)ꢀ+ꢀTC
0.02
0.01
JC
JC
ꢀꢀꢀꢀꢀꢀRΘ =0.53℃/W
JC
singleꢀpulse
10ꢁ3
10ꢁ2
10ꢁ5
10ꢁ4
10ꢁ2
10ꢁ1
100
101
1Eꢁ5
1Eꢁ4
1Eꢁ3
0.01
0.1
1
t1,ꢀRectangularꢀPulseꢀDurationꢀ[sec]
PulseꢀWidthꢀ(s)
Fig.12ꢀSingleꢀPulseꢀMaximumꢀPowerꢀ
Dissipationꢀ–ꢀMDP18N50Bꢀ(TOꢁ220)ꢀ
Fig.11ꢀTransientꢀThermalꢀResponseꢀCurveꢀ
MDP18N50Bꢀ(TOꢁ220)ꢀ
ꢀ
ꢀ
ꢀ
4
Decꢀ2011.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
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ꢀ
ꢀ
ꢀ
102
101
100
10ꢁ1
10ꢁ2
12000
9000
6000
3000
0
OperationꢀinꢀThisꢀAreaꢀ
isꢀLimitedꢀbyꢀRꢀDS(on)
singleꢀPulse
thJCꢀ=ꢀ3.4℃/W
TCꢀ=ꢀ25℃
10ꢀµs
100ꢀµs
1ꢀms
10ꢀms
100ꢀms
DC
R
SingleꢀPulse
TJ=Maxꢀrated
TC=25℃
10ꢁ1
100
101
102
1Eꢁ5
1Eꢁ4
1Eꢁ3
0.01
0.1
1
PulseꢀWidthꢀ(s)
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.14ꢀSingleꢀPulseꢀMaximumꢀPowerꢀ
Dissipationꢀ–ꢀMDF13N50Bꢀ(TOꢁ220F)ꢀ
Fig.13ꢀMaximumꢀSafeꢀOperatingꢀAreaꢀ
MDF13N50Bꢀ(TOꢁ220F)ꢀ
ꢀ
101
D=0.5
100
10ꢁ1
10ꢁ2
0.2
0.1
0.05
※ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t1/t2
0.02
ꢀꢀꢀꢀꢀꢀPEAKꢀTJꢀ=ꢀPDMꢀ*ꢀZθ ꢀ*ꢀRθ (t)ꢀ+ꢀTC
JC
JC
ꢀꢀꢀꢀꢀꢀRΘ =3.4℃/W
0.01
JC
singleꢀpulse
10ꢁ5
10ꢁ4
10ꢁ3
10ꢁ2
10ꢁ1
100
101
t1,ꢀRectangularꢀPulseꢀDurationꢀ[sec]
Fig.15ꢀTransientꢀThermalꢀResponseꢀCurveꢀ
MDF13N50Bꢀ(TOꢁ220F)ꢀ
5
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ꢀ ꢀ ꢀ PhysicalꢀDimensions
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ꢀ
3ꢀLeads,ꢀTOꢁ220ꢀ
ꢀ
Dimensionsꢀareꢀinꢀmillimetersꢀunlessꢀotherwiseꢀspecifiedꢀ
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6
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PhysicalꢀDimension
ꢀ
ꢀ
ꢀ
3ꢀLeads,ꢀTOꢁ220Fꢀ
ꢀ
ꢀ
Dimensionsꢀareꢀinꢀmillimetersꢀunlessꢀotherwiseꢀspecifiedꢀ
ꢀ
ꢀ
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ꢀ
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ꢀ
ꢀ
ꢀ
ꢀ
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Symbol
Min
4.50
0.63
1.15
0.33
15.47
9.60
Nom
Max
4.93
0.91
1.47
0.63
A
b
b1
C
D
E
e
F
G
L
16.13
10.71
2.54
2.34
6.48
12.24
2.79
2.52
3.10
3.00
2.84
6.90
13.72
3.67
2.96
3.50
3.55
L1
Q
Q1
￠R
ꢀ
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