AT42QT1010-TSHR [MICROCHIP]

IC TOUCH SENSOR 1KEY SOT23-6;
AT42QT1010-TSHR
型号: AT42QT1010-TSHR
厂家: MICROCHIP    MICROCHIP
描述:

IC TOUCH SENSOR 1KEY SOT23-6

PC 光电二极管
文件: 总30页 (文件大小:269K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AT42QT1010  
AT42QT1010 Data Sheet  
Introduction  
The AT42QT1010 is a digital burst mode charge-transfer sensor that is capable of detecting near  
proximity or touch, making it ideal for implementing touch controls.  
The QT1010 is designed specifically for human interfaces like control panels, appliances, toys, lighting  
controls, or anywhere a mechanical switch or button may be found. It includes all hardware and signal  
processing functions necessary to provide stable sensing under a wide variety of changing conditions.  
Only a single low-cost capacitor is required for operation.  
Features  
Number of Keys:  
One – configurable as either a single key or a proximity sensor  
Technology:  
Patented spread-spectrum charge-transfer (direct mode)  
Key outline sizes:  
6 mm × 6 mm or larger (panel thickness dependent); widely different sizes and shapes  
possible  
Electrode design:  
Solid or ring electrode shapes  
PCB Layers required:  
One  
Electrode materials:  
Etched copper, silver, carbon, Indium Tin Oxide (ITO)  
Electrode substrates:  
PCB, FPCB, plastic films, glass  
Panel materials:  
Plastic, glass, composites, painted surfaces (low particle density metallic paints possible)  
Panel thickness:  
Up to 12 mm glass, 6 mm plastic (electrode size and Cs dependent)  
Key sensitivity:  
Settable via capacitor (Cs)  
Interface:  
Digital output, active high  
Moisture tolerance:  
Increased moisture tolerance based on hardware design and firmware tuning  
Operating Voltage:  
DS40001946A-page 1  
Datasheet  
© 2017 Microchip Technology Inc.  
 
 
AT42QT1010  
1.8 V – 5.5 V; 17 µA at 1.8 V typical  
Package:  
6-pin SOT23-6 RoHS compliant  
8-pin UDFN/USON RoHS compliant  
Signal processing:  
Self-calibration, auto drift compensation, noise filtering  
Applications:  
Control panels, consumer appliances, proximity sensor applications, toys, lighting controls,  
mechanical switch or button,  
Patents:  
QTouch® technology (patented charge-transfer method)  
HeartBeat (monitors health of device)  
DS40001946A-page 2  
Datasheet  
© 2017 Microchip Technology Inc.  
Table of Contents  
Introduction......................................................................................................................1  
Features.......................................................................................................................... 1  
1. Pinout and Schematic................................................................................................5  
1.1. Pinout Configurations...................................................................................................................5  
1.2. Pin Descriptions........................................................................................................................... 5  
1.3. Schematics...................................................................................................................................6  
2. Overview of the AT42QT1010................................................................................... 8  
2.1. Introduction...................................................................................................................................8  
2.2. Basic Operation............................................................................................................................8  
2.3. Electrode Drive.............................................................................................................................8  
2.4. Sensitivity..................................................................................................................................... 8  
3. Operation Specifics................................................................................................. 10  
3.1. Run Modes.................................................................................................................................10  
3.2. Threshold....................................................................................................................................11  
3.3. Max On-duration.........................................................................................................................12  
3.4. Detect Integrator.........................................................................................................................12  
3.5. Forced Sensor Recalibration......................................................................................................12  
3.6. Drift Compensation.....................................................................................................................12  
3.7. Response Time.......................................................................................................................... 13  
3.8. Spread Spectrum....................................................................................................................... 13  
3.9. Output Features......................................................................................................................... 13  
4. Circuit Guidelines.................................................................................................... 15  
4.1. More Information........................................................................................................................ 15  
4.2. Sample Capacitor.......................................................................................................................15  
4.3. UDFN/USON Package Restrictions........................................................................................... 15  
4.4. Power Supply and PCB Layout..................................................................................................15  
4.5. Power On................................................................................................................................... 16  
5. Specifications.......................................................................................................... 17  
5.1. Absolute Maximum Specifications..............................................................................................17  
5.2. Recommended Operating Conditions........................................................................................ 17  
5.3. AC Specifications....................................................................................................................... 17  
5.4. Signal Processing.......................................................................................................................19  
5.5. DC Specifications.......................................................................................................................20  
5.6. Mechanical Dimensions............................................................................................................. 21  
5.7. Part Marking...............................................................................................................................23  
5.8. Part Number...............................................................................................................................23  
5.9. Moisture Sensitivity Level (MSL)................................................................................................24  
6. Associated Documents............................................................................................25  
DS40001946A-page 3  
Datasheet  
© 2017 Microchip Technology Inc.  
AT42QT1010  
7. Revision History.......................................................................................................26  
The Microchip Web Site................................................................................................ 27  
Customer Change Notification Service..........................................................................27  
Customer Support......................................................................................................... 27  
Microchip Devices Code Protection Feature................................................................. 27  
Legal Notice...................................................................................................................28  
Trademarks................................................................................................................... 28  
Quality Management System Certified by DNV.............................................................29  
Worldwide Sales and Service........................................................................................30  
DS40001946A-page 4  
Datasheet  
© 2017 Microchip Technology Inc.  
AT42QT1010  
1.  
Pinout and Schematic  
1.1  
Pinout Configurations  
1.1.1  
6-pin SOT23-6  
Pin 1 ID  
SYNC/  
MODE  
OUT  
1
6
5
4
VSS  
VDD  
SNS  
2
3
SNSK  
1.1.2  
8-pin UDFN/USON  
Pin 1 ID  
8
SNS  
VDD  
SNSK  
N/C  
1
2
3
4
7
6
5
N/C  
SYNC/MODE  
OUT  
VSS  
1.2  
Pin Descriptions  
1.2.1  
6-pin SOT23-6  
Table 1-1.ꢀPin Listing  
Name Pin Type Comments  
If Unused, Connect To...  
OUT  
VSS  
1
2
O
P
Output state  
Supply ground  
Sense pin  
Sense pin  
Power  
SNSK 3  
I/O  
I/O  
P
Cs + Key  
SNS  
VDD  
4
5
Cs  
SYNC 6  
I
SYNC and Mode Input Pin is either SYNC/Slow/Fast Mode, depending on logic  
level applied (see Section 3.1)  
DS40001946A-page 5  
Datasheet  
© 2017 Microchip Technology Inc.  
 
 
 
AT42QT1010  
Legend: I = Input only, O = Output only, push-pull, I/O = Input/output,  
OD = Open drain output, P = Ground or power  
1.2.2  
8-pin UDFN/USON  
Table 1-2.ꢀPin Listing  
Name Pin Type Comments  
If Unused, Connect To...  
SNSK  
N/C  
1
2
3
4
5
I/O  
P
Sense pin  
Cs + Key  
No connection  
No connection  
Supply ground  
Output state  
N/C  
VSS  
OUT  
O
I
SYNC/ 6  
MODE  
SYNC and Mode Input Pin is either SYNC/Slow/Fast Mode, depending on logic  
level applied (see Section 3.1)  
VDD  
SNS  
7
8
P
Power  
I/O  
Sense pin  
Cs  
Legend: I = Input only, O = Output only, push-pull, I/O = Input/output,  
OD = Open drain output, P = Ground or power  
1.3  
Schematics  
1.3.1  
6-pin SOT23-6  
Figure 1-1.ꢀBasic Circuit Configuration  
VDD  
SENSE  
ELECTRODE  
5
VDD  
Rs  
3
4
1
OUT  
SNSK  
SNS  
Cs  
Cx  
6
SYNC/MODE  
VSS  
2
Note: A bypass capacitor should be tightly wired  
between Vdd and Vss and kept close to pin 5.  
DS40001946A-page 6  
Datasheet  
© 2017 Microchip Technology Inc.  
 
 
AT42QT1010  
1.3.2  
8-pin UDFN/USON  
Figure 1-2.ꢀBasic Circuit Configuration  
Vdd  
SENSE  
ELECTRODE  
7
VDD  
Rs  
1
8
6
5
2
3
OUT  
NC  
SNSK  
SNS  
Cs  
Cx  
NC  
SYNC/MODE  
VSS  
4
Note: A bypass capacitor should be tightly wired  
between Vdd and Vss and kept close to pin 5.  
DS40001946A-page 7  
Datasheet  
© 2017 Microchip Technology Inc.  
 
AT42QT1010  
2.  
Overview of the AT42QT1010  
2.1  
Introduction  
The AT42QT1010 is a digital burst mode charge-transfer sensor that is capable of detecting near-  
proximity or touch, making it ideal for implementing touch controls.  
With the proper electrode and circuit design, the self-contained digital IC will project a touch or proximity  
field to several centimeters through any dielectric like glass, plastic, stone, ceramic, and even most kinds  
of wood. It can also turn small metal-bearing objects into intrinsic sensors, making them responsive to  
proximity or touch. This capability, coupled with its ability to self-calibrate, can lead to entirely new product  
concepts.  
The QT1010 is designed specifically for human interfaces like control panels, appliances, toys, lighting  
controls, or anywhere a mechanical switch or button may be found. It includes all hardware and signal  
processing functions necessary to provide stable sensing under a wide variety of changing conditions.  
Only a single low-cost capacitor is required for operation.  
2.2  
Basic Operation  
Figure 1-1 and Figure 1-2 show basic circuits.  
The QT1010 employs bursts of charge-transfer cycles to acquire its signal. Burst mode permits power  
consumption in the microamp range, dramatically reduces RF emissions, lowers susceptibility to EMI, and  
yet permits excellent response time. Internally the signals are digitally processed to reject impulse noise,  
using a “consensus” filter which requires four consecutive confirmations of a detection before the output  
is activated.  
The QT switches and charge measurement hardware functions are all internal to the QT1010.  
2.3  
Electrode Drive  
For optimum noise immunity, the electrode should only be connected to SNSK.  
In all cases, the rule Cs >> Cx must be observed for proper operation; a typical load capacitance (Cx)  
ranges from 5–20 pF while Cs is usually about 2–50 nF.  
Increasing amounts of Cx destroy gain; therefore, it is important to limit the amount of stray capacitance  
on both SNS terminals. This can be done, for example, by minimizing trace lengths and widths, and  
keeping these traces away from power or ground traces or copper pours.  
The traces and any components associated with SNS and SNSK will become touch sensitive and should  
be treated with caution to limit the touch area to the desired location.  
A series resistor, Rs, should be placed in line with SNSK to the electrode to suppress ESD and EMC  
effects.  
2.4  
Sensitivity  
2.4.1  
Introduction  
The sensitivity on the QT1010 is a function of things like the value of Cs, electrode size and capacitance,  
electrode shape and orientation, the composition and aspect of the object to be sensed, the thickness  
DS40001946A-page 8  
Datasheet  
© 2017 Microchip Technology Inc.  
 
 
 
 
 
AT42QT1010  
and composition of any overlaying panel material, and the degree of ground coupling of both sensor and  
object.  
2.4.2  
Increasing Sensitivity  
In some cases it may be desirable to increase sensitivity; for example, when using the sensor with very  
thick panels having a low dielectric constant, or when the device is used as a proximity sensor. Sensitivity  
can often be increased by using a larger electrode or reducing panel thickness. Increasing electrode size  
can have diminishing returns, since high values of Cx will reduce sensor gain.  
The value of Cs also has a dramatic effect on sensitivity, and this can be increased in value with the  
trade-off of slower response time and more power. Increasing the electrode's surface area will not  
substantially increase touch sensitivity if its diameter is already much larger in surface area than the  
object being detected. Panel material can also be changed to one having a higher dielectric constant,  
which will better help to propagate the field.  
In the case of proximity detection, usually the object being detected is on an approaching hand, so a  
larger surface area can be effective.  
Ground planes around and under the electrode and its SNSK trace will cause high Cx loading and  
destroy gain. The possible signal-to-noise ratio benefits of ground area are more than negated by the  
decreased gain from the circuit so ground areas around electrodes are discouraged. Metal areas near the  
electrode will reduce the field strength and increase Cx loading and should be avoided, if possible. Keep  
ground away from the electrodes and traces.  
2.4.3  
2.4.4  
Decreasing Sensitivity  
In some cases the QT1010 may be too sensitive. In this case gain can be easily lowered further by  
decreasing Cs.  
Proximity Sensing  
By increasing the sensitivity, the QT1010 can be used as a very effective proximity sensor, allowing the  
presence of a nearby object (typically a hand) to be detected.  
In this scenario, as the object being sensed is typically a hand, very large electrode sizes can be used,  
which is extremely effective in increasing the sensitivity of the detector. In this case, the value of Cs will  
also need to be increased to ensure improved sensitivity, as mentioned in Section 2.4.2. Note that,  
although this affects the responsiveness of the sensor, it is less of an issue in proximity sensing  
applications; in such applications it is necessary to detect simply the presence of a large object, rather  
than a small, precise touch.  
DS40001946A-page 9  
Datasheet  
© 2017 Microchip Technology Inc.  
 
AT42QT1010  
3.  
Operation Specifics  
3.1  
Run Modes  
3.1.1  
Introduction  
The QT1010 has three running modes which depend on the state of the SYNC pin (high or low).  
3.1.2  
Fast Mode  
The QT1010 runs in Fast mode if the SYNC pin is permanently high. In this mode the QT1010 runs at  
maximum speed at the expense of increased current consumption. Fast mode is useful when speed of  
response is the prime design requirement. The delay between bursts in Fast mode is approximately 1 ms,  
as shown in the following figure.  
Figure 3-1.ꢀFast Mode Bursts (SYNC Held High)  
SNSK  
~1 ms  
SYNC  
3.1.3  
Low Power Mode  
The QT1010 runs in Low Power (LP) mode if the SYNC pin is held low. In this mode it sleeps for  
approximately 80 ms at the end of each burst, saving power but slowing response. On detecting a  
possible key touch, it temporarily switches to Fast mode until either the key touch is confirmed or found to  
be spurious (via the detect integration process). It then returns to LP mode after the key touch is  
resolved, as shown in the following figure.  
Figure 3-2.ꢀLow Power Mode (SYNC Held Low)  
fast detect  
integrator  
8 0 ms  
sleep  
sleep  
sleep  
SNSK  
SYNC  
OUT  
3.1.4  
SYNC Mode  
It is possible to synchronize the device to an external clock source by placing an appropriate waveform  
on the SYNC pin. SYNC mode can synchronize multiple QT1010 devices to each other to prevent cross-  
DS40001946A-page 10  
Datasheet  
© 2017 Microchip Technology Inc.  
 
 
 
 
AT42QT1010  
interference, or it can be used to enhance noise immunity from low frequency sources such as 50Hz or  
60Hz mains signals.  
The SYNC pin is sampled at the end of each burst. If the device is in Fast mode and the SYNC pin is  
sampled high, then the device continues to operate in Fast mode (Figure 3-1). If SYNC is sampled low,  
then the device goes to sleep. From then on, it will operate in SYNC mode (Figure 3-2). Therefore, to  
guarantee entry into SYNC mode, the low period of the SYNC signal should be longer than the burst  
length (Figure 3-3).  
Figure 3-3.ꢀSYNC Mode (Triggered by SYNC Edges)  
sleep  
sleep  
sleep  
Revert to Fast Mode  
SNSK  
SYNC  
slow mode sleep period  
SNSK  
SYNC  
sleep  
sleep  
sleep  
Revert to Slow Mode  
slow mode sleep period  
However, once SYNC mode has been entered, if the SYNC signal consists of a series of short pulses  
(>10 μs), then a burst will only occur on the falling edge of each pulse (Figure 3-4) instead of on each  
change of SYNC signal, as normal (Figure 3-3).  
In SYNC mode, the device will sleep after each measurement burst (just as in LP mode) but will be  
awakened by a change in the SYNC signal in either direction, resulting in a new measurement burst. If  
SYNC remains unchanged for a period longer than the LP mode sleep period (about 80 ms), the device  
will resume operation in either Fast or LP mode depending on the level of the SYNC pin (Figure 3-3).  
There is no Detect Integrator (DI) in SYNC mode (each touch is a detection), but the Max On-duration will  
depend on the time between SYNC pulses, refer toMax On-duration and Section 3.4. Recalibration  
timeout is a fixed number of measurements so it will vary with the SYNC period.  
Figure 3-4.ꢀSYNC Mode (Short Pulses)  
SNSK  
>10 μs  
>10 μs  
>10 μs  
SYNC  
3.2  
Threshold  
The internal signal threshold level is fixed at 10 counts of change with respect to the internal reference  
level, which in turn adjusts itself slowly in accordance with the drift compensation mechanism.  
The QT1010 employs a hysteresis dropout of two counts of the delta between the reference and  
threshold levels.  
DS40001946A-page 11  
Datasheet  
© 2017 Microchip Technology Inc.  
 
 
 
AT42QT1010  
3.3  
Max On-duration  
If an object or material obstructs the sense pad, the signal may rise enough to create a detection,  
preventing further operation. To prevent this, the sensor includes a timer which monitors detections. If a  
detection exceeds the timer setting, the sensor performs a full recalibration. This is known as the Max  
On-duration feature and is set to ~60s (at 3V in LP mode). This will vary slightly with Cs and if SYNC  
mode is used. As the internal timebase for Max On-duration is determined by the burst rate, the use of  
SYNC can cause dramatic changes in this parameter depending on the SYNC pulse spacing. For  
example, at 60Hz SYNC mode the Max On-duration will be ~6s at 3V.  
3.4  
Detect Integrator  
It is desirable to suppress detections generated by electrical noise or from quick brushes with an object.  
To accomplish this, the QT1010 incorporates a Detect Integration (DI) counter that increments with each  
detection until a limit is reached, after which the output is activated. If no detection is sensed prior to the  
final count, the counter is reset immediately to zero. In the QT1010, the required count is four. In LP  
mode the device will switch to Fast mode temporarily in order to resolve the detection more quickly; after  
a touch is either confirmed or denied, the device will revert back to normal LP mode operation  
automatically.  
The DI can also be viewed as a “consensus filter” that requires four successive detections to create an  
output.  
3.5  
3.6  
Forced Sensor Recalibration  
The QT1010 has no recalibration pin; a forced recalibration is accomplished when the device is powered  
up or after the recalibration timeout. However, supply drain is low so it is a simple matter to treat the  
entire IC as a controllable load; driving the QT1010's Vdd pin directly from another logic gate or a  
microcontroller port will serve as both power and “forced recalibration”. The source resistance of most  
CMOS gates and microcontrollers is low enough to provide direct power without problem.  
Drift Compensation  
Signal drift can occur because of changes in Cx and Cs over time. It is crucial that drift be compensated  
for; otherwise, false detections, non-detections, and sensitivity shifts will follow.  
Drift compensation (Figure 3-5) is performed by making the reference level track the raw signal at a slow  
rate, but only while there is no detection in effect. The rate of adjustment must be performed slowly,  
otherwise legitimate detections could be ignored. The QT1010 drift compensates using a slew-rate limited  
change to the reference level; the threshold and hysteresis values are slaved to this reference.  
Once an object is sensed, the drift compensation mechanism ceases since the signal is legitimately high,  
and therefore should not cause the reference level to change.  
DS40001946A-page 12  
Datasheet  
© 2017 Microchip Technology Inc.  
 
 
 
 
AT42QT1010  
Figure 3-5.ꢀDrift Compensation  
Signal  
Hysteresis  
Threshold  
Reference  
Output  
The QT1010 drift compensation is asymmetric; the reference level drift-compensates in one direction  
faster than it does in the other. Specifically, it compensates faster for decreasing signals than for  
increasing signals. Increasing signals should not be compensated for quickly, since an approaching finger  
could be compensated for partially or entirely before even approaching the sense electrode. However, an  
obstruction over the sense pad, for which the sensor has already made full allowance, could suddenly be  
removed leaving the sensor with an artificially elevated reference level and thus become insensitive to  
touch. In this latter case, the sensor will compensate for the object's removal very quickly, usually in only  
a few seconds.  
With large values of Cs and small values of Cx, drift compensation will appear to operate more slowly  
than with the converse. Note that the positive and negative drift compensation rates are different.  
3.7  
3.8  
Response Time  
The QT1010's response time is highly dependent on run mode and burst length, which in turn is  
dependent on Cs and Cx. With increasing Cs, response time slows, while increasing levels of Cx reduce  
response time. The response time will also be a lot slower in LP or SYNC mode due to a longer time  
between burst measurements.  
Spread Spectrum  
The QT1010 modulates its internal oscillator by ±7.5% during the measurement burst. This spreads the  
generated noise over a wider band, reducing emission levels. This also reduces susceptibility since there  
is no longer a single fundamental burst frequency.  
3.9  
Output Features  
3.9.1  
Output  
The output of the QT1010 is active-high upon detection.  
The output will remain active-high for the duration of the detection, or until the Max On-duration expires,  
whichever occurs first. If a Max On-duration timeout occurs first, the sensor performs a full recalibration  
and the output becomes inactive (low) until the next detection.  
3.9.2  
HeartBeat Output  
The QT1010 output has a HeartBeat “health” indicator superimposed on it in all modes. This operates by  
taking the output pin into a three-state mode for 15 μs, once before every QT burst. This output state can  
be used to determine that the sensor is operating properly, using one of several simple methods, or it can  
be ignored.  
DS40001946A-page 13  
Datasheet  
© 2017 Microchip Technology Inc.  
 
 
 
 
AT42QT1010  
The HeartBeat indicator can be sampled by using a pull-up resistor on the OUT pin (Figure 3-6), and  
feeding the resulting positive-going pulse into a counter, flip flop, one-shot, or other circuit. The pulses will  
only be visible when the chip is not detecting a touch.  
Figure 3-6.ꢀObtaining HeartBeat Pulses with a Pull-up Resistor (SOT23-6)  
VDD  
5
VDD  
HeartBeat" Pulse  
Ro  
3
4
1
OUT  
SNSK  
SNS  
6
SYNC/MODE  
VSS  
2
If the sensor is wired to a microcontroller as shown in Figure 3-7, the microcontroller can reconfigure the  
load resistor to either Vss or Vdd depending on the output state of the QT1010, so that the pulses are  
evident in either state.  
Figure 3-7.ꢀUsing a Microcontroller to Obtain HeartBeat Pulses in Either Output State (SOT23-6)  
Ro  
Port_M.x  
Port_M.y  
3
4
1
OUT  
SNSK  
SNS  
Microcontroller  
6
SYNC/MODE  
Electromechanical devices like relays will usually ignore the short HeartBeat pulse. The pulse also has  
too low a duty cycle to visibly affect LEDs. It can be filtered completely if desired, by adding an RC filter to  
the output, or if interfacing directly and only to a high-impedance CMOS input, by doing nothing or at  
most adding a small noncritical capacitor from OUT to Vss.  
3.9.3  
Output Drive  
The OUT pin is active high and can sink or source up to 2 mA. When a large value of Cs (>20 nF) is  
used, the OUT current should be limited to <1 mA to prevent gain-shifting side effects, which happen  
when the load current creates voltage drops on the die and bonding wires; these small shifts can  
materially influence the signal level to cause detection instability.  
DS40001946A-page 14  
Datasheet  
© 2017 Microchip Technology Inc.  
 
 
AT42QT1010  
4.  
Circuit Guidelines  
4.1  
More Information  
Refer to Application Note QTAN0002, "Secrets of a Successful QTouch® Design", and the "Touch  
Sensors Design Guide" (both downloadable from http://www.microchip.com), for more information on  
construction and design methods.  
4.2  
Sample Capacitor  
Cs is the charge sensing sample capacitor. The required Cs value depends on the thickness of the panel  
and its dielectric constant. Thicker panels require larger values of Cs. Typical values are 2 nF to 50 nF  
depending on the sensitivity required; larger values of Cs demand higher stability and better dielectric to  
ensure reliable sensing.  
The Cs capacitor should be a stable type, such as X7R ceramic or PPS film. For more consistent sensing  
from unit to unit, 5% tolerance capacitors are recommended. X7R ceramic types can be obtained in 5%  
tolerance at little or no extra cost. In applications where high sensitivity (long burst length) is required, the  
use of PPS capacitors is recommended.  
For battery powered operation, a higher value sample capacitor is recommended (typical value 8.2 nF).  
4.3  
4.4  
UDFN/USON Package Restrictions  
The central pad on the underside of the UDFN/USON chip is connected to ground. Do not run any tracks  
underneath the body of the chip, only ground.  
Power Supply and PCB Layout  
See Section 5.2 for the power supply range. At 3V, current drain averages less than 500 μA in Fast mode.  
If the power supply is shared with another electronic system, care should be taken to ensure that the  
supply is free of digital spikes, sags, and surges which can adversely affect the QT1010. The QT1010 will  
track slow changes in Vdd, but it can be badly affected by rapid voltage fluctuations. It is highly  
recommended that a separate voltage regulator be used just for the QT1010 to isolate it from power  
supply shifts caused by other components.  
If desired, the supply can be regulated using a Low Dropout (LDO) regulator, although such regulators  
often have poor transient line and load stability. See Application Note QTAN0002, "Secrets of a  
Successful QTouch® Design" for further information.  
Parts placement: The chip should be placed to minimize the SNSK trace length to reduce low frequency  
pickup, and to reduce stray Cx, which degrades gain. The Cs and Rs resistors (see Figure 1-1) should be  
placed as close to the body of the chip as possible so that the trace between Rs and the SNSK pin is very  
short, thereby reducing the antenna-like ability of this trace to pick up high frequency signals and feed  
them directly into the chip. A ground plane can be used under the chip and the associated discrete  
components, but the trace from the Rs resistor and the electrode should not run near ground to reduce  
loading.  
For best EMC performance, the circuit should be made entirely with SMT components.  
DS40001946A-page 15  
Datasheet  
© 2017 Microchip Technology Inc.  
 
 
 
 
 
AT42QT1010  
Electrode trace routing: Keep the electrode trace (and the electrode itself) away from other signal, power,  
and ground traces including over or next to ground planes. Adjacent switching signals can induce noise  
onto the sensing signal; any adjacent trace or ground plane next to, or under, the electrode trace will  
cause an increase in Cx load and desensitize the device.  
Note: For proper operation, a 100 nF (0.1 μF) ceramic bypass capacitor must be used directly between  
Vdd and Vss to prevent latch-up if there are substantial Vdd transients; for example, during an ESD  
event. The bypass capacitor should be placed very close to the Vss and Vdd pins.  
4.5  
Power On  
On initial power up, the QT1010 requires approximately 100 ms to power on to allow power supplies to  
stabilize. During this time the OUT pin state is not valid and should be ignored.  
DS40001946A-page 16  
Datasheet  
© 2017 Microchip Technology Inc.  
 
AT42QT1010  
5.  
Specifications  
5.1  
Absolute Maximum Specifications  
Operating temperature  
–40°C to +85°C  
–55°C to +125°C  
0 to +6.5 V  
Storage temperature  
Vdd  
Max continuous pin current, any control or drive pin  
Short circuit duration to Vss, any pin  
Short circuit duration to Vdd, any pin  
Voltage forced onto any pin  
±20 mA  
Infinite  
Infinite  
–0.6V to (Vdd + 0.6) V  
CAUTION: Stresses beyond those listed under Absolute Maximum Specifications may cause permanent  
damage to the device. This is a stress rating only and functional operation of the device at these or  
other conditions beyond those indicated in the operational sections of this specification is not implied.  
Exposure to absolute maximum specification conditions for extended periods may affect device  
reliability.  
5.2  
Recommended Operating Conditions  
Vdd  
+1.8 to 5.5 V  
±20 mV  
Short-term supply ripple + noise  
Long-term supply stability  
Cs value  
±100 mV  
2 to 50 nF  
5 to 50 pF  
Cx value  
5.3  
AC Specifications  
Table 5-1.ꢀVdd = 3.0 V, Cs = 4.7 nF, Cx = 5 pF, Ta = recommended range, unless otherwise noted  
Parameter Description Min Typ Max Units Notes  
Trc  
Recalibration time  
200 –  
3.05 –  
ms  
μs  
Cs, Cx dependent  
Tpc  
Charge duration  
±7.5% spread spectrum  
variation  
Tpt  
Transfer duration  
9.0  
1.2  
μs  
±7.5% spread spectrum  
variation  
Tg1  
Time between end of burst and  
start of the next (Fast mode)  
ms  
DS40001946A-page 17  
Datasheet  
© 2017 Microchip Technology Inc.  
 
 
 
 
AT42QT1010  
Parameter Description  
Min Typ Max Units Notes  
Tg2  
Time between end of burst and  
start of the next (LP mode)  
80  
ms  
Increases with decreasing  
Vdd  
See Figure 5-1  
Tbl  
Burst length  
2.45 –  
ms  
Vdd, Cs and Cx dependent.  
See Section 4.2 for capacitor  
selection.  
Tr  
Response time  
100 ms  
– μs  
Thb  
HeartBeat pulse width  
15  
Figure 5-1.ꢀTg2 Time Between Bursts (LP Mode)  
DS40001946A-page 18  
Datasheet  
© 2017 Microchip Technology Inc.  
 
AT42QT1010  
Figure 5-2.ꢀTbl Burst Length  
5.4  
Signal Processing  
Table 5-2.ꢀVdd = 3.0V, Cs = 4.7 nF, Cx = 5 pF, Ta = recommended range, unless otherwise noted  
Description  
Min Typ Max Units  
Notes  
Threshold differential  
Hysteresis  
10  
2
counts  
counts  
samples  
Consensus filter length 4  
Max on-duration  
60  
seconds (At 3 V in LP mode) Will vary in SYNC mode and  
with Vdd  
DS40001946A-page 19  
Datasheet  
© 2017 Microchip Technology Inc.  
 
AT42QT1010  
5.5  
DC Specifications  
Table 5-3.ꢀVdd = 3.0V, Cs = 4.7 nF, Cx = 5 pF, Ta = recommended range, unless otherwise noted  
Parameter Description  
Min  
1.8  
Typ Max  
Units Notes  
Vdd  
Idd  
Supply voltage  
5.5  
V
Supply current, Fast  
mode  
203.0 –  
246.0  
378.5  
542.5  
729.0  
μA  
μA  
V/s  
1.8 V  
2.0 V  
3.0 V  
4.0 V  
5.0 V  
IddI  
Supply current, LP mode –  
16.5  
19.5  
34.0  
51.5  
73.5  
1.8 V  
2.0 V  
3.0 V  
4.0 V  
5.0 V  
Vdds  
Vil  
Supply turn-on slope  
Low input logic level  
10  
Required for proper start-up  
0.2 × Vdd V  
0.3 × Vdd  
Vdd = 1.8 V – 2.4 V  
Vdd = 2.4 V – 5.5 V  
Vhl  
High input logic level  
0.7 × Vdd –  
0.6 × Vdd  
V
Vdd = 1.8 V – 2.4 V  
Vdd = 2.4 V – 5.5 V  
Vol  
Voh  
Iil  
Low output voltage  
0.5  
V
OUT, 4 mA sink  
High output voltage  
Input leakage current  
Load capacitance range  
Acquisition resolution  
2.3  
V
OUT, 1 mA source  
<0.05 1  
μA  
pF  
bits  
Cx  
Ar  
2
9
50  
14  
DS40001946A-page 20  
Datasheet  
© 2017 Microchip Technology Inc.  
 
AT42QT1010  
5.6  
Mechanical Dimensions  
5.6.1  
6-pin SOT23-6  
D
5
A
A
6
4
A2  
A1  
E
E1  
A
Pin #1 ID  
0.10  
C
SEATING PLANE  
1
b
3
2
C
Side View  
e
Top View  
A2  
A
0.10  
C
SEATING PLANE  
c
0.25  
C
A1  
SEATING PLANE  
View A-A  
C
SEE VIEW B  
O
L
View B  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
MIN  
MAX  
1.45  
0.15  
1.30  
3.00  
3.00  
1.75  
0.55  
NOM  
NOTE  
SYMBOL  
A
A1  
A2  
D
0
0.90  
2.80  
2.60  
1.50  
0.30  
2.90  
2.80  
1.60  
0.45  
0.95 BSC  
2
Notes: 1. This package is compliant with JEDEC specification  
MO-178 Variation AB.  
E
2. Dimension D does not include mold Flash, protrusions or  
gate burrs. Mold Flash, protrustion or gate burrs shall not  
exceed 0.25 mm per end.  
3. Dimension b does not include dambar protrusion.  
Allowable dambar protrusion shall not cause the lead width  
to exceed the maximum b dimension by more than 0.08 mm  
4. Die is facing down after trim/form.  
E1  
L
e
b
0.30  
0.09  
0°  
0.50  
0.20  
8°  
3
c
q
1/25/13  
TITLE  
DRAWING NO.  
REV.  
GPC  
6ST1, 6-lead, 2.90 x 1.60 mm Plastic Small Outline  
Package (SOT23)  
TAQ  
6ST1  
B
Package Drawing Contact:  
packagedrawings@atmel.com  
Note:ꢀ For the most current package drawings, please see the Microchip Packaging Specification located  
at http://www.microchip.com/packaging  
DS40001946A-page 21  
Datasheet  
© 2017 Microchip Technology Inc.  
 
AT42QT1010  
5.6.2  
8-pin UDFN/USON  
Bottom view  
Top view  
Side view  
D2  
e
A
8
7
6
5
5
8
k
C0.2  
E
E2  
PIN 1 ID  
L
4
1
2
3
1
4
b
D
A1  
0.05 C  
0.05 C  
f
A
8X  
d
COMMON DIMENSIONS  
C
(Unit of Measure = mm)  
A1  
Side view  
MIN  
-
MAX  
0.60  
0.05  
0.30  
2.05  
1.60  
2.00  
1.00  
NOM  
NOTE  
SYMBOL  
A
-
A1  
b
0.00  
0.20  
1.95  
1.40  
-
-
NOTES:  
D
D2  
E
2.00  
1.50  
1.95  
0.90  
0.50 BSC  
0.30  
-
1. All dimensions are in mm. Angles in degrees.  
2. Coplanarity applies to the exposed pad as well as the terminals.  
Coplanarity shall not exceed 0.05 mm.  
3. Warpage shall not exceed 0.05 mm.  
2.05  
E2  
e
0.80  
4. Refer to JEDEC MO-236/MO-252.  
L
0.20  
0.20  
0.40  
-
k
01/25/13  
REV.  
B
TITLE  
DRAWING NO.  
GPC  
8MA4, 8-pad, 2.0x2.0x0.6 mm Body, 0.5 mm pitch,  
0.9x1.5 mm Exposed ePad, Ultra-Thin Dual Flat  
No Lead Package (UDFN/USON)  
YAG  
8MA4  
Package Drawing Contact:  
packagedrawings@atmel.com  
Note:ꢀ For the most current package drawings, please see the Microchip Packaging Specification located  
at http://www.microchip.com/packaging  
DS40001946A-page 22  
Datasheet  
© 2017 Microchip Technology Inc.  
AT42QT1010  
5.7  
Part Marking  
5.7.1  
AT42QT1010– 6-pin SOT23-6  
Abbreviated  
Part Number:  
1010  
Pin 1 ID  
AT42QT1010  
Note:ꢀ Samples of the AT42QT1010 may also be marked T10E.  
5.7.2  
AT42QT1010 – 8-pin UDFN/USON  
Abbreviated  
Part Number:  
AT42QT1010  
Die Revision  
(Example: “E” shown)  
1010  
HEC  
YZZ  
Class code  
(H = Industrial,  
green NiPdAu)  
Assembly Location  
Code  
(Example: “C” shown)  
Pin 1 ID  
Lot Number Trace  
code (Variable text)  
Pin 1  
Last Digit of Year  
(Variable text)  
Note:ꢀ Samples of the AT42QT1010 may also be marked T10  
5.8  
Part Number  
Part Number  
Description  
AT42QT1010(1)  
6-pin SOT23 RoHS compliant IC  
6-pin SOT23 RoHS compliant IC  
8-pin UDFN/USON RoHS compliant IC  
AT42QT1010-TSHR  
AT42QT1010-MAH  
Notes: 1. Marking details:  
Top mark 1st line: ddddTY  
Top mark 2nd line: wwxxx  
dddd= device, special code  
T= Type  
Y= Year last digit  
ww= calendar workweek  
xxx = trace code  
DS40001946A-page 23  
Datasheet  
© 2017 Microchip Technology Inc.  
 
 
 
AT42QT1010  
5.9  
Moisture Sensitivity Level (MSL)  
MSL Rating  
Peak Body Temperature  
260oC  
Specifications  
IPC/JEDEC J-STD-020  
MSL1  
DS40001946A-page 24  
Datasheet  
© 2017 Microchip Technology Inc.  
 
AT42QT1010  
6.  
Associated Documents  
For additional information, refer to the following document (downloadable from the Touch Technology  
area of the Microchip website, www.microchip.com):  
Touch Sensors Design Guide  
QTAN0002 – Secrets of a Successful QTouch® Design  
DS40001946A-page 25  
Datasheet  
© 2017 Microchip Technology Inc.  
 
AT42QT1010  
7.  
Revision History  
Revision No.  
History  
Revision A – May 2009  
Revision B – August 2009  
Revision C – August 2009  
Revision D – January 2010  
Revision E – January 2010  
Revision F – February 2010  
Initial release  
Update for chip revision 2.2  
Minor update for clarity  
Power specifications updated for revision 2.4.1  
Part markings updated  
MSL specification revised  
Other minor updates  
Revision G – March 2010  
Update for chip revision 2.6  
• Migration advice added  
Revision H – May 2010  
Revision I – May 2013  
UDFN/USON package added  
Applied new template  
DS40001946A – August 2017  
Part marking clarification added. Replaces Atmel document 9541I.  
DS40001946A-page 26  
Datasheet  
© 2017 Microchip Technology Inc.  
 
AT42QT1010  
The Microchip Web Site  
Microchip provides online support via our web site at http://www.microchip.com/. This web site is used as  
a means to make files and information easily available to customers. Accessible by using your favorite  
Internet browser, the web site contains the following information:  
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Subscribers will receive e-mail notification whenever there are changes, updates, revisions or errata  
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To register, access the Microchip web site at http://www.microchip.com/. Under “Support”, click on  
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Customer Support  
Users of Microchip products can receive assistance through several channels:  
Distributor or Representative  
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Technical Support  
Customers should contact their distributor, representative or Field Application Engineer (FAE) for support.  
Local sales offices are also available to help customers. A listing of sales offices and locations is included  
in the back of this document.  
Technical support is available through the web site at: http://www.microchip.com/support  
Microchip Devices Code Protection Feature  
Note the following details of the code protection feature on Microchip devices:  
Microchip products meet the specification contained in their particular Microchip Data Sheet.  
Microchip believes that its family of products is one of the most secure families of its kind on the  
market today, when used in the intended manner and under normal conditions.  
There are dishonest and possibly illegal methods used to breach the code protection feature. All of  
these methods, to our knowledge, require using the Microchip products in a manner outside the  
operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is  
engaged in theft of intellectual property.  
Microchip is willing to work with the customer who is concerned about the integrity of their code.  
DS40001946A-page 27  
Datasheet  
© 2017 Microchip Technology Inc.  
 
 
 
 
AT42QT1010  
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their  
code. Code protection does not mean that we are guaranteeing the product as “unbreakable.”  
Code protection is constantly evolving. We at Microchip are committed to continuously improving the  
code protection features of our products. Attempts to break Microchip’s code protection feature may be a  
violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software  
or other copyrighted work, you may have a right to sue for relief under that Act.  
Legal Notice  
Information contained in this publication regarding device applications and the like is provided only for  
your convenience and may be superseded by updates. It is your responsibility to ensure that your  
application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR  
WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY  
OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS  
CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE.  
Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life  
support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend,  
indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting  
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The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings,  
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All other trademarks mentioned herein are property of their respective companies.  
©
2017, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.  
DS40001946A-page 28  
Datasheet  
© 2017 Microchip Technology Inc.  
 
 
AT42QT1010  
ISBN: 978-1-5224-2069-9  
Quality Management System Certified by DNV  
ISO/TS 16949  
Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer  
fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California  
and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC®  
DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and  
analog products. In addition, Microchip’s quality system for the design and manufacture of development  
systems is ISO 9001:2000 certified.  
DS40001946A-page 29  
Datasheet  
© 2017 Microchip Technology Inc.  
 
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DS40001946A-page 30  
Datasheet  
© 2017 Microchip Technology Inc.  
 

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