1N4460US [MICROSEMI]
1.5 WATT ZENER DIODES; 1.5瓦齐纳二极管
| 元器件型号： | 1N4460US |
| 生产厂家： | 
MICROSEMI CORPORATION
|
| 描述和应用： | 1.5 WATT ZENER DIODES |
| PDF文件： | 总2页 (文件大小：124K) |
| 下载文档： | 下载PDF数据表文档文件 |
| 型号参数：1N4460US参数 | |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 生命周期 | Active |
| IHS 制造商 | CENTRAL SEMICONDUCTOR CORP |
| 包装说明 | O-PALF-W2 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| HTS代码 | 8541.10.00.50 |
| 风险等级 | 5.1 |
| 其他特性 | HIGH PERFORMANCE |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE |
| 二极管元件材料 | SILICON |
| 二极管类型 | ZENER DIODE |
| JEDEC-95代码 | DO-41 |
| JESD-30 代码 | O-PALF-W2 |
| JESD-609代码 | e3 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | LONG FORM |
| 峰值回流温度（摄氏度） | 260 |
| 极性 | UNIDIRECTIONAL |
| 最大功率耗散 | 1.5 W |
| 认证状态 | Not Qualified |
| 标称参考电压 | 6.2 V |
| 表面贴装 | NO |
| 技术 | ZENER |
| 端子面层 | MATTE TIN (315) |
| 端子形式 | WIRE |
| 端子位置 | AXIAL |
| 处于峰值回流温度下的最长时间 | 10 |
| Base Number Matches | 1 |
MAX34334CSE前5页PDF页面详情预览
• AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/406
• 1.5 WATT ZENER DIODES
• NON CAVITY CONSTRUCTION
• METALLURGICALLY BONDED
1N6485US
THRU
1N6491US
AND
1N4460US
AND
1N4461US
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +200°C
Power Dissapation: 1.5W @ TA=+25°C
Power Derating: 10mW/°C above TA=+25°C
Forward Voltage: 1.0V dc @ IF=200mA dc
1.5 V dc @ IF=1A dc
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
ZENER
TEST
DYNAMIC
KNEE
TEST
REVERSE TEST
MAXIMUM VZ
(REG)
MAXIMUM
VOLTAGE CURRENT IMPEDENCE IMPEDENCE CURRENT CURRENT VOLTAGE CURRENT
VZ
SURGE
(NOM.)
IZT
(MAX.)
(MAX.)
IZK
(MAX.)
VR
IZM
±5%
ZZT@IZT
ZZK@IZT
IR@VR
µ
A
VOLTS
mA
OHMS
OHMS
mA
VOLTS
MA
VOLTS
AMPS
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
76.0
69.0
64.0
58.0
53.0
49.0
45.0
40.0
37.0
10
10
9
9
8
7
5
4
2.5
400
400
400
400
500
500
600
200
200
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
50
50
35
5.0
4.0
1.0
0.5
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.72
4.08
433
397
366
332
304
280
255
230
210
.90
.80
.75
.70
.60
.50
.40
.35
.30
4.2
3.9
3.6
3.3
3.0
2.7
2.5
2.3
2.1
DIM
D
F
G
S
MILLIMETERS
MIN
MAX
2.31
2.62
0.48
0.71
4.28
5.08
0.08MIN.
INCHES
MIN MAX
0.091 0.103
0.019 0.028
0.168 0.200
0.003MIN.
TYPE
FIGURE 1
1N6485US
1N6486US
1N6487US
1N6488US
1N6489US
1N6490US
1N6491US
1N4460US
1N4461US
DESIGN DATA
CASE:
D-5A, hermetically sealed glass
case, per MIL-PRF- 19500/406
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
20 °C/W maximum at L = 0
THERMAL IMPEDANCE: (Z
OJX): 4.5
°C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
153
1N6485US
thru
1N6491US
and
1N4460US
and 1N4461US
FIGURE 2
Pd. Power Dissipation
(WATTS)
1.5
1.0
O.5
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
175
POWER DERATING CURVE
1000
500
400
300
200
ZENER IMPEDANCE Z
ZT
(OHMS)
100
50
40
30
20
10
5
4
3
2
1
.1
.2
.5
1
2
5
10
20
50
100
OPERATING CURRENT I
ZT
(mA)
3.3 VOLT
5.1 VOLT
6.2 VOLT
FIGURE 3
ZENER IMPEDANCE VS. OPERATING CURRENT
154
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