APT4SC60K [MICROSEMI]

Rectifier Diode, Schottky, 1 Element, 4A, 600V V(RRM);


型号：	APT4SC60K
厂家：	Microsemi
描述：	Rectifier Diode, Schottky, 1 Element, 4A, 600V V(RRM) 局域网功效二极管
文件：	总3页 (文件大小：120K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

D²PAK

TO-220

1- Cathode

2- Anode

APT4SC60K

600V 4A

Back of Case -Cathode

APT4SC60SA 600V 4A

SILICON CARBIDE SCHOTTKY RECTIFIER DIODE

PRODUCT FEATURES

PRODUCT BENEFITS

PRODUCT APPLICATIONS

• Schottky Barrier

Majority Carrier Only

• Wide Energy Gap

• High Breakdown Electric

Field

• High Thermal Conductivity

• High Pulse Capability

• Positive Vf Temp Coefficient

• Low Forward Voltage

• No dv/dt Limitation

• Popular TO-220 or TO-263 (D2)

Surface Mount Package

• Switching Losses Nearly

Eliminated zero recovery^TM

• Greatly Reduced Turn On Loss

• Improved Overall Efficiency

• Enables Higher Freq. Operation

• Simplify Or Eliminate Snubber

Circuits

• High Temperature Operation

• Low Leakage Current

• Radiation Hardness

• High Power Density

• PFC And Forward Topologies

• Hard Or Soft Switched

Topologies

• High Frequency

High Performance

• Thermally Stable Paralleling

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise specified.

APT4SC60K_SA

Symbol Characteristic / Test Conditions

UNIT

V_R

Maximum D.C. Reverse Voltage

V_RRM

V_RWM

I_F(AV)

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

Maximum Average Forward Current (T_C= 139°C, Duty Cycle = 0.5)

RMS Forward Current (Square wave, 50% duty)

Non-Repetitive Forward Surge Current (T_J= 25°C, t_p= 10µs)

Power Dissipation (T_C= 25°C)

600

Volts

Amps

I_F(RMS)

I_FSM

110

P_TOT

T_J,T_STG

T_L

Watts

°C

62.5

Operating and StorageTemperature Range

-55 to 175

300

Lead Temperature for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Symbol

MIN

TYP

1.6

2.4

2.0

MAX

UNIT

I_F= 4A, T_J= 25°C

1.8

V_F

Forward Voltage

I_F= 8A, T_J= 25°C

Volts

I_F= 4A, T_J= 175°C

2.4

200

V_R= V_RRated, T_J= 25°C

V_R= V_RRated, T_J= 175°C

I_RM

Maximum Reverse Leakage Current

µA

1000

APT Website - http://www.advancedpower.com

zero recovery^TM, is a Trademark of CREE INC.

DYNAMIC CHARACTERISTICS

APT4SC60K_SA

Characteristic / Test Conditions

Symbol

MIN

TYP

MAX

UNIT

Q_C

t_fr

Capacitance (V_R= 400V, T_C= 25°C, F = 1 MHz)

Total Capacitive Charge (V_R= 600V, I_F= 4A, di_F/dt = 500A/µs, T_C= 25°C)

Forward Recovery Time ¹

N/A

Reverse Recovery Time ¹

t_rr

V/ns

Peak Diode Recovery (V_R= 480V, di/dt = 1000A/µs, T_C= 25°C)

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

2.4

UNIT

R_θJC

R_θJA

Junction-to-Case Thermal Resistance

Junction-to-Ambient Thermal Resistance

°C/W

0.07

1.9

W_T

Package Weight

lb•in

N•m

Torque Maximum Mounting Torque

1.1

1 As a majority carrier device, there is no reverse recovery charge.

APTReservestheright tochange, without notice, thespecificationsandinformationcontainedherein.

2.50

0.9

2.00

0.7

1.50

0.5

Note:

1.00

0.3

0.50

Duty Factor D =

0.1

SINGLEPULSE

Peak T = P

x Z + T

θJC C

0.05

10^-5

10^-4

10^-3

10^-2

10^-1

1.0

RECTANGULARPULSEDURATION(seconds)

FIGURE1a.MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvs.PULSEDURATION

RC MODEL

Junction

temp(°C)

2.08 °C/W

0.000969 J/°C

0.106 J/°C

Power

(watts)

0.320 °C/W

Case temperature(°C)

FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL

APT4SC60K_SA

TYPICAL PERFORMANCE CURVES

100

T = -55°C

T = 25°C

T = 75°C

T = 25°C

T = 125°C

T = 75°C

T = 125°C

T = 175°C

100 200 300 400 500 600 700

V , CATHODE-TO-ANODE VOLTAGE (V)

V ,ANODE-TO-CATHODEVOLTAGE(V)

Figure 2. Forward Current vs. Forward Voltage

Figure 3. Reverse Current vs. Reverse Voltage

250

200

150

100

= 25°C

= 400V

Case Temperature (°C)

Figure 4. Current Derating

100

125

150

175

100

400

V , REVERSE VOLTAGE (V)

Figure5.JunctionCapacitancevs.ReverseVoltage

TO-263(D²)SurfacemountPackageoutline

TO-220ABPackageOutline

10.66 (.420)

9.66 (.380)

4.45 (.175)

4.57 (.180)

1.27 (.050)

1.32 (.052)

10.06 (.396)

10.31 (.406)

7.54 (.297)

7.68 (.303)

1.40 (.055)

1.65 (.065)

1.39 (.055)

0.51 (.020)

5.33 (.210)

4.83 (.190)

Cathode

6.85 (.270)

5.85 (.230)

6.02 (.237)

6.17 (.243)

8.51 (.335)

8.76 (.345)

4.08 (.161) Dia.

3.54 (.139)

3.42 (.135)

2.54 (.100)

0.050 (.002)

12.192 (.480)

9.912 (.390)

0.330 (.013)

0.432 (.017)

0.080 (2.032)

MAX.

3.683 (.145)

MAX.

0.000 (.000)

0.254 (.010)

2.62 (.103)

2.72 (.107)

0.762 (.030)

0.864 (.034)

{2 Plcs.}

3.68 (.145)

6.27 (.247)

(Base of Lead)

14.73 (.580)

12.70 (.500)

1.22 (.048)

1.32 (.052)

{3 Plcs.}

Heat Sink (Cathode)

and Leads are Plated

Cathode

Anode

0.50 (.020)

0.41 (.016)

2.54 (.100) BSC

{2 Plcs.}

2.92 (.115)

2.04 (.080)

1.01 (.040) 2-Plcs.

.83 (.033)

1.77 (.070) 2-Plcs.

1.15 (.045)

Anode

Cathode

5.33 (.210)

4.83 (.190)

4.82 (.190)

3.56 (.140)

Dimensions in Millimeters and (Inches)

APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.

Dimensions in Millimeters (Inches)

APT4SC60K [MICROSEMI]

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