APT50M65LFLLG [MICROSEMI]
Power Field-Effect Transistor, 67A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN;
| 型号： | APT50M65LFLLG |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 67A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT50M65B2FLL
APT50M65LFLL
500V 67A 0.065Ω
R
B2FLL
POWER MOS 7 FREDFET
T-MaxTM
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-264
LFLL
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
G
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT50M65B2FLL_LFLL
UNIT
VDSS
ID
Drain-Source Voltage
500
67
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
268
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
694
PD
5.5
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
67
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3000
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
2
Drain-Source On-State Resistance
(VGS = 10V, 33.5A)
0.065
250
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
µA
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
APT50M65 B2FLL - LFLL
Symbol
Ciss
Coss
Crss
Qg
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
V
= 0V
Input Capacitance
7010
1390
87
GS
V
= 25V
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
141
40
GS
V
= 250V
Qgs
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
I
= 67A @ 25°C
D
Qgd
70
RESISTIVESWITCHING
td(on)
tr
12
V
= 15V
GS
28
V
= 250V
DD
td(off)
29
Turn-off Delay Time
Fall Time
I
= 67A @ 25°C
D
tf
R
= 0.6Ω
30
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
1035
845
Turn-on Switching Energy
V
= 333V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 67A, R = 3Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
1556
1013
V
= 333V V = 15V
GS
DD
Turn-off Switching Energy
I
= 67A, R = 3Ω
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
67
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
268
1.3
15
2
Volts
V/ns
(VGS = 0V, IS = -67A)
dv
/
dv
5
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -67A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
270
540
trr
ns
µC
Reverse Recovery Charge
(IS = -67A, di/dt = 100A/µs)
2.6
9.6
17
Qrr
Peak Recovery Current
(IS = -67A, di/dt = 100A/µs)
IRRM
Amps
31
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.18
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
4 Starting T = +25°C, L = 1.34mH, R = 25Ω, Peak I = 67A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
device itself.
I
≤ -67A
/
≤ 700A/µs
V
R ≤ 500V T ≤ 150°C
dt
S
J
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.20
0.9
0.16
0.7
0.12
0.5
Note:
0.08
t
1
0.3
t
2
t
0.04
1
Duty Factor D =
/
t
2
0.1
Peak T = P
x Z + T
J
DM
θJC C
SINGLEPULSE
0.05
0
10-5
10-4
10-3
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
10-2
10-1
1.0
Typical Performance Curves
APT50M65B2FLL-LFLL
180
160
140
120
100
80
15 &10V
RC MODEL
8V
Junction
temp. ( ”C)
0.0271
0.00899F
0.0202F
0.293F
7V
Power
0.0656
(Watts)
6.5V
6V
60
40
0.0860
5.5V
5V
20
0
Case temperature
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
180
1.4
NORMALIZED TO
V
> I (ON) x
R
(ON)MAX.
DS
D
DS
V
= 10V @ 33.5A
250µSEC. PULSE TEST
GS
160
140
120
100
80
@ <0.5 % DUTY CYCLE
1.3
1.2
1.1
V
=10V
GS
1.00
0.90
0.80
60
40
20
0
T
= +125°C
J
V
=20V
GS
T
= +25°C
J
T
= -55°C
8
J
0
1
2
3
4
5
6
7
9
0
10
20
30
40
50
60
70
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
70
1.15
1.10
1.05
1.00
0.95
0.90
0.85
60
50
40
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
1.2
2.5
I
= 33.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT50M65B2FLL-LFLL
268
100
30,000
10,000
OPERATION HERE
LIMITED BY R (ON)
DS
C
iss
C
oss
100µS
1,000
10
1mS
100
10
C
rss
T
T
=+25°C
=+150°C
C
J
10mS
SINGLE PULSE
1
1
10
100
500
0
V
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
20
30
40
50
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
16
200
I
= 67A
D
100
12
8
T
=+150°C
V
=100V
J
DS
V
=250V
T =+25°C
J
DS
V
=400V
DS
10
4
0
1
0.3
0
40
g
80
120
160
200
0.5
0.7
0.9
1.1
1.3
1.5
Q , TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
160
V
= 333V
DD
= 3Ω
t
R
T
d(off)
70
140
120
100
80
G
= 125°C
J
t
f
L = 100µH
60
V
= 333V
DD
= 3Ω
50
40
30
20
10
0
R
T
G
= 125°C
J
L = 100µH
60
40
t
d(on)
t
r
20
0
10
30
50
70
90
110
10
30
50
70
90
110
I
(A)
I (A)
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3000
2500
2000
1500
1000
5000
4000
3000
2000
1000
0
V
= 333V
V
I
= 333V
DD
DD
= 67A
R
= 3Ω
G
E
D
off
T
= 125°C
T
= 125°C
J
J
E
L = 100µH
on
L = 100µH
EON includes
EON includes
diode reverse recovery.
diode reverse recovery.
E
on
500
0
E
off
10
30
50
70
90
110
0
5
10 15 20 25 30 35 40 45 50
I
(A)
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT50M65B2FLL-LFLL
90%
Gate Voltage
Drain Current
10 %
Gate Voltage
T
= 125 C
T
= 125 C
J
J
t
t
d(off)
d(on)
Drain Voltage
t
r
90%
90%
5 %
10%
0
10 %
Drain Voltage
t
f
Drain Current
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT60DF60
VCE
IC
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAX® (B2)PackageOutline
TO-264(L)PackageOutline
4.69 (.185)
5.31 (.209)
4.60 (.181)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Gate
1.01 (.040)
1.40 (.055)
Drain
Source
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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