APT50M75B2LLG [MICROSEMI]
Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3;
| 型号： | APT50M75B2LLG |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：1512K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT50M75B2LL(G)
APT50M75LLL(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
500V 57A 0.075 Ω
R
POWER MOS 7 MOSFET
B2LL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
LLL
D
S
• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
G
• Lower Gate Charge, Qg
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT50M75B2LL_LLL
UNIT
VDSS
ID
Drain-Source Voltage
500
57
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
228
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
570
PD
4.56
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
57
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
2500
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 28.5A)
0.075
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
µA
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT50M75B2LL_LLL(G)
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
5590
1180
85
V
= 0V
GS
Output Capacitance
V
= 25V
pF
DS
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
125
33
GS
V
= 250V
Qgs
Qgd
td(on)
tr
DD
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
I
= 57A @ 25°C
D
65
RESISTIVESWITCHING
8
V
= 15V
GS
19
V
= 250V
DD
I
= 57A @ 25°C
D
td(off)
21
Turn-off Delay Time
Fall Time
R
= 0.6Ω
G
tf
3
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
755
725
1240
845
V
= 333V, V = 15V
GS
DD
I
= 57A, R = 5Ω
Turn-off Switching Energy
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Turn-on Switching Energy
V
= 333V V = 15V
GS
DD
I
= 57A, R = 5Ω
Turn-off Switching Energy
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol
MIN
TYP
MAX
57
Characteristic / Test Conditions
UNIT
IS
Continuous Source Current (Body Diode)
Amps
ISM
1
228
1.3
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
VSD
t rr
(VGS = 0V, IS = -57A)
Volts
ns
655
Reverse Recovery Time (IS = -57A, dlS/dt = 100A/µs)
Q rr
Reverse Recovery Charge (IS = -57A, dlS/dt = 100A/µs)
13.5
µC
dv
/
5
Peak Diode Recovery dv
/
dt
V/ns
8
dt
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.22
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.54mH, R = 25Ω, Peak I = 57A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 57A
/
≤ 700A/µs
VR ≤ V
T ≤ 150°C
J
dt
S
D
DSS
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.25
0.9
0.2
0.7
0.15
0.5
0.1
Note:
t
1
0.3
t
2
0.05
t
1
/
t
Duty Factor D =
2
0.1
0.05
Peak T = P
x Z + T
J
DM
θJC C
SINGLEPULSE
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT50M75B2LL_LLL(G)
120
100
8V
15 &10V
7.5V
RC MODEL
Junction
temp. (°C)
0.0144
0.0763
0.130
0.00575F
0.0186F
0.278F
7V
80
60
40
Power
(watts)
6.5V
6V
20
0
Case temperature. (°C)
5.5V
0
V
5
10
15
20
25
30
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
160
1.2
NORMALIZED TO
V
> I (ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
MAX.
DS(ON)
DS
D
V
= 10V @ I = 28.5A
GS
D
140
120
100
80
1.15
1.10
1.05
1.00
V
=10V
GS
60
V
=20V
GS
T
= +125°C
40
20
0
J
T
= -55°C
J
0.95
0.90
T
= +25°C
J
0
V
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE5,R
vsDRAINCURRENT
DS(ON)
1.15
1.10
1.05
1.00
0.95
0.90
0.85
60
50
40
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 28.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8, R
vs. TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
DS(ON)
APT50M75B2LL_LLL(G)
228
100
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
C
oss
1,000
100µS
10
1mS
100
10
C
rss
T
=+25°C
C
10mS
T =+150°C
J
SINGLEPULSE
10
1
1
V
100
500
0
V
10
20
30
40
50
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
16
12
200
I
= 57A
V
=100V
D
DS
100
V
=250V
DS
T =+150°C
J
V
=400V
DS
T =+25°C
J
8
4
0
10
1
0
40
g
80
120
160
200
0.3
V
0.6
0.9
1.2
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
SD
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
100
120
V
= 333V
DD
= 5Ω
110
100
90
80
70
60
50
40
30
20
10
R
T
90
G
t
= 125°C
d(off)
J
80
70
L = 100µH
t
V
= 333V
f
DD
= 5Ω
R
T
G
60
50
40
30
20
= 125°C
J
L = 100µH
t
r
t
d(on)
10
1
10 20 30
40 50
(A)
60
70
80
90
10 20
30
40 50 60
(A)
70 80
90
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
2000
1500
1000
3500
3000
2500
2000
1500
1000
V
= 333V
V
I
= 333V
DD
= 5Ω
DD
= 57A
R
T
G
D
= 125°C
T
= 125°C
J
J
E
off
L = 100µH
L = 100µH
E
EON includes
EON includes
on
diode reverse recovery
diode reverse recovery
E
on
500
0
E
off
500
0
10 20
30
40
50
(A)
60
70
80 90
0
5
10 15 20 25 30 35 40 45 50
I
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT50M75B2LL_LLL(G)
90 %
Gate Voltage
Drain Current
10 %
td(on)
Gate Voltage
TJ = 125
C
TJ = 125
C
td(off)
tf
Drain Voltage
90%
90%
tr
5 %
5 %
0
Drain Voltage
Drain Current
10%
10%
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT60DF60
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2)PackageOutline
TO-264(L)PackageOutline
e1 SAC: Tin, Silver, Copper
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
4.60 (.181)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
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MICROSEMI
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