APT50M75JFLL [ADPOW]

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。
APT50M75JFLL
型号: APT50M75JFLL
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。

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APT50M75JFLL  
500V 52A 0.075W  
TM  
FREDFET  
POWER MOS 7  
S
S
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel  
enhancement mode power MOSFETS. Both conduction and switching  
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)  
and Qg. Power MOS 7TM combines lower conduction and switching losses  
along with exceptionally fast switching speeds inherent with APT's  
patented metal gate structure.  
D
G
SOT-227  
"UL Recognized"  
ISOTOP®  
• Lower Input Capacitance  
• Lower Miller Capacitance  
• Lower Gate Charge, Qg  
• Increased Power Dissipation  
• Easier To Drive  
D
G
• Popular SOT-227 Package  
FAST RECOVERY BODY DIODE  
S
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT50M75JFLL  
UNIT  
VDSS  
ID  
Drain-Source Voltage  
Volts  
500  
52  
Continuous Drain Current @ TC = 25°C  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
208  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
±30  
±40  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
480  
Watts  
W/°C  
PD  
3.84  
-55 to 150  
300  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
52  
1
EAR  
EAS  
50  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
4
2500  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
BVDSS  
ID(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
500  
52  
Volts  
2
On State Drain Current  
(VDS > ID(on) x RDS(on) Max, VGS = 10V)  
Amps  
2
RDS(on)  
Drain-Source On-State Resistance  
(VGS = 10V, 0.5 ID[Cont.])  
Ohms  
µA  
0.075  
250  
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)  
IDSS  
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)  
1000  
±100  
5
IGSS  
nA  
VGS(th)  
Volts  
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
USA  
405 S.W. Columbia Street  
Chemin de Magret  
Bend, Oregon 97702-1035  
F-33700 Merignac - France  
Phone: (541) 382-8028  
Phone: (33) 5 57 92 15 15  
FAX: (541) 388-0364  
FAX: (33) 5 56 47 97 61  
EUROPE  
APT50M75JFLL  
DYNAMIC CHARACTERISTICS  
Symbol Characteristic  
Test Conditions  
GS = 0V  
MIN  
MIN  
MIN  
TYP  
5400  
1040  
95  
MAX  
UNIT  
Ciss  
Coss  
Crss  
Qg  
Input Capacitance  
V
Output Capacitance  
pF  
VDS = 25V  
f = 1 MHz  
Reverse Transfer Capacitance  
3
VGS = 10V  
VDD = 0.5 VDSS  
Total Gate Charge  
145  
30  
Qgs  
Qgd  
td(on)  
tr  
nC  
ns  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
ID = ID [Cont.] @ 25°C  
70  
11  
V
GS = 15V  
VDD = 0.5 VDSS  
ID = ID [Cont.] @ 25°C  
RG = 0.6W  
12  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
30  
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
TYP  
MAX  
52  
UNIT  
Continuous Source Current (Body Diode)  
IS  
Amps  
1
ISM  
VSD  
Pulsed Source Current (Body Diode)  
208  
1.3  
5
2
Diode Forward Voltage  
Peak Diode Recovery dv  
Reverse Recovery Time  
(VGS = 0V, IS = -ID [Cont.])  
Volts  
V/ns  
5
dv  
/
/
dt  
dt  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
250  
500  
ns  
µC  
trr  
(IS = -ID [Cont.], di  
Reverse Recovery Charge  
(IS = -ID [Cont.], di  
dt = 100A/µs)  
Peak Recovery Current  
(IS = -ID [Cont.], di  
dt = 100A/µs)  
/dt = 100A/µs)  
1.6  
5.5  
15  
Qrr  
/
IRRM  
Amps  
/
27  
THERMAL CHARACTERISTICS  
Symbol Characteristic  
TYP  
MAX  
0.26  
40  
UNIT  
Junction to Case  
RqJC  
RqJA  
°C/W  
Junction to Ambient  
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction  
temperature.  
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%  
See MIL-STD-750 Method 3471  
Starting T = +25°C, L = 1.85mH, R = 25W, Peak I = 52A  
j
G
L
APT Reserves the right to change, without notice, the specifications and information contained herein.  
SOT-227 (ISOTOP®) Package Outline  
11.8 (.463)  
12.2 (.480)  
31.5 (1.240)  
31.7 (1.248)  
8.9 (.350)  
9.6 (.378)  
W=4.1 (.161)  
W=4.3 (.169)  
H=4.8 (.187)  
H=4.9 (.193)  
(4 places)  
7.8 (.307)  
8.2 (.322)  
Hex Nut M4  
(4 places)  
25.2 (0.992)  
25.4 (1.000)  
r = 4.0 (.157)  
(2 places)  
4.0 (.157)  
4.2 (.165)  
(2 places)  
0.75 (.030) 12.6 (.496)  
0.85 (.033) 12.8 (.504)  
3.3 (.129)  
3.6 (.143)  
1.95 (.077)  
2.14 (.084)  
14.9 (.587)  
15.1 (.594)  
* Source  
Drain  
30.1 (1.185)  
30.3 (1.193)  
* Source terminals are shorted  
internally. Current handling  
capability is equal for either  
Source terminal.  
38.0 (1.496)  
38.2 (1.504)  
* Source  
Dimensions in Millimeters and (Inches)  
Gate  
APT's devices are covered by one or more of the following U.S.patents: 4,895,810  
5,256,583  
5,045,903  
4,748,103  
5,089,434  
5,283,202  
5,182,234  
5,231,474  
5,019,522  
5,434,095  
5,262,336  
5,528,058  

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