APT60M75L2FLLG [MICROSEMI]
Power Field-Effect Transistor, 73A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN;
| 型号： | APT60M75L2FLLG |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 73A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT60M75L2FLL
600V 73A 0.075Ω
R
POWER MOS 7 FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-264
Max
• Lower Input Capacitance
• Increased Power Dissipation
D
S
• Lower Miller Capacitance • Easier To Drive
G
• Lower Gate Charge, Qg
MAXIMUM RATINGS
• Popular TO-264 MAX Package
•
FAST RECOVERY BODY DIODE
All Ratings: T = 25°C unless otherwise specified.
C
APT60M75L2FLL
UNIT
Symbol
VDSS
ID
Parameter
Volts
Drain-Source Voltage
600
Continuous Drain Current @ TC = 25°C
73
292
Amps
Volts
1
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
VGSM
±40
Watts
W/°C
893
PD
7.14
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
300
73
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
UNIT
Volts
Ohms
MIN
TYP
MAX
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 36.5A)
0.075
250
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
IDSS
µA
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
APT60M75L2FLL
Symbol
Ciss
Coss
Crss
Qg
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
V
= 0V
Input Capacitance
8930
1130
GS
V
= 25V
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
50
195
48
3
V
= 10V
Total Gate Charge
GS
V
= 300V
Qgs
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
I
= 73A @ 25°C
D
Qgd
100
23
19
RESISTIVESWITCHING
td(on)
tr
V
= 15V
GS
V
= 300V
DD
td(off)
55
Turn-off Delay Time
Fall Time
I
= 73A @ 25°C
D
tf
R
= 0.6Ω
8
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
1515
1745
2345
Turn-on Switching Energy
V
= 400V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 73A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
V
= 400V V = 15V
GS
DD
Turn-off Switching Energy
I
= 73A, R = 5Ω
1950
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
73
UNIT
Continuous Source Current (Body Diode)
IS
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
292
1.3
15
2
(VGS = 0V, IS = -73A)
Volts
V/ns
dv
5
dv
/
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -73A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
300
600
trr
ns
µC
Reverse Recovery Charge
(IS = -73A, di/dt = 100A/µs)
2.6
10
17
34
Qrr
Peak Recovery Current
(IS = -73A, di/dt = 100A/µs)
IRRM
Amps
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.14
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.20mH, R = 25Ω, Peak I = 73A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 73A
/
≤ 700A/µs
V
R ≤ 600V T ≤ 150°C
dt
S
D
J
6 Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinforationcontainedherein.
0.16
0.14
0.9
0.12
0.7
0.10
0.08
0.5
Note:
t
0.06
1
0.3
t
2
0.04
t
1
Duty Factor D =
/
t
2
Peak T = P
x Z + T
0.02
0
0.1
J
DM
θJC C
0.05
SINGLEPULSE
10-3
10-5
10-4
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT60M75L2FLL
200
180
160
140
120
100
80
V
=15 &10V
GS
8V
7.5V
7V
RC MODEL
Junction
temp. (°C)
6.5
0.0484
0.0903
0.0236F
0.400F
Power
(watts)
6V
60
40
5.5V
20
0
Case temperature. (°C)
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
180
1.40
NORMALIZED TO
V
> I (ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
MAX.
DS(ON)
DS
D
V
= 10V
@
I
= 36.5A
160
140
120
100
80
GS
D
1.30
1.20
1.10
1.00
T
= -50°C
J
V
=10V
GS
T
J
= +25°C
60
V
=20V
T
= +125°C
GS
J
40
0.90
0.80
20
0
0
1
2
3
4
5
6
7
8
9
0
20
40
60
80
100 120 140
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R
vsDRAINCURRENT
DS(ON)
1.15
1.10
1.05
1.00
80
70
60
50
40
30
20
0.95
0.90
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 36.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8, R
vs. TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
DS(ON)
APT60M75L2FLL
292
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
100
50
100µS
C
oss
rss
1,000
10
1mS
100
10
C
10mS
T
=+25°C
C
T =+150°C
J
SINGLEPULSE
10
1
16
12
1
100
600
0
V
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
200
I
= 73A
D
100
T =+150°C
J
V
=120V
DS
T =+25°C
J
V
=300V
DS
8
V
=480V
DS
10
4
0
1
0
50
100
150
200
250
300
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
160
180
V
= 400V
DD
= 5Ω
R
T
160
140
120
100
80
G
140
t
= 125°C
d(off)
J
L = 100µH
120
V
= 400V
DD
= 5Ω
100
80
R
T
t
G
f
= 125°C
J
L = 100µH
t
r
60
60
40
40
t
d(on)
20
0
20
0
10
30
50
70
(A)
90
110
130
10
30
50
70
(A)
90
110
130
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
5000
4000
3000
2000
8000
7000
6000
5000
4000
3000
2000
1000
0
V
= 400V
V
I
= 400V
DD
= 5Ω
DD
= 73A
R
T
G
D
= 125°C
T
= 125°C
E
off
J
J
L = 100µH
L = 100µH
EON includes
EON includes
diode reverse recovery
diode reverse recovery
E
off
E
E
on
on
1000
0
10
30
50
70
(A)
90
110
130
0
5
10 15 20 25 30 35 40 45 50
I
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT60M75L2FLL
90%
GateVoltage
DrainCurrent
10%
T 125°C
T 125°C
J
J
GateVoltage
td(off)
DrainVoltage
td(on)
90%
tf
90%
tr
10%
10%
5%
5%
0
DrainVoltage
DrainCurrent
SwitchingEnergy
SwitchingEnergy
Figure18,Turn-onSwitchingWaveformsandDefinitions
Figure19,Turn-offSwitchingWaveformsandDefinitions
APT60DF60
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264MAXTM(L2)PackageOutline
4.60 (.181)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.80 (.071)
2.01 (.079)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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