APT60M75L2FLLG [MICROSEMI]

Power Field-Effect Transistor, 73A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN;
APT60M75L2FLLG
型号: APT60M75L2FLLG
厂家: Microsemi    Microsemi
描述:

Power Field-Effect Transistor, 73A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN

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APT60M75L2FLL  
600V 73A 0.075Ω  
R
POWER MOS 7 FREDFET  
Power MOS 7® is a new generation of low loss, high voltage, N-Channel  
enhancement mode power MOSFETS. Both conduction and switching  
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)  
and Qg. Power MOS 7® combines lower conduction and switching losses  
along with exceptionally fast switching speeds inherent with APT's  
patented metal gate structure.  
TO-264  
Max  
• Lower Input Capacitance  
• Increased Power Dissipation  
D
S
• Lower Miller Capacitance • Easier To Drive  
G
• Lower Gate Charge, Qg  
MAXIMUM RATINGS  
• Popular TO-264 MAX Package  
FAST RECOVERY BODY DIODE  
All Ratings: T = 25°C unless otherwise specified.  
C
APT60M75L2FLL  
UNIT  
Symbol  
VDSS  
ID  
Parameter  
Volts  
Drain-Source Voltage  
600  
Continuous Drain Current @ TC = 25°C  
73  
292  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
VGS  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
±30  
VGSM  
±40  
Watts  
W/°C  
893  
PD  
7.14  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
-55 to 150  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
300  
73  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
1
EAR  
EAS  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
50  
4
3200  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
UNIT  
Volts  
Ohms  
MIN  
TYP  
MAX  
BVDSS  
RDS(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
600  
2
Drain-Source On-State Resistance  
(VGS = 10V, ID = 36.5A)  
0.075  
250  
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 5mA)  
IDSS  
µA  
1000  
±100  
5
IGSS  
nA  
VGS(th)  
Volts  
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
DYNAMIC CHARACTERISTICS  
APT60M75L2FLL  
Symbol  
Ciss  
Coss  
Crss  
Qg  
MIN  
TYP  
MAX  
Characteristic  
UNIT  
TestConditions  
V
= 0V  
Input Capacitance  
8930  
1130  
GS  
V
= 25V  
pF  
Output Capacitance  
DS  
f = 1 MHz  
Reverse Transfer Capacitance  
50  
195  
48  
3
V
= 10V  
Total Gate Charge  
GS  
V
= 300V  
Qgs  
nC  
ns  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
DD  
I
= 73A @ 25°C  
D
Qgd  
100  
23  
19  
RESISTIVESWITCHING  
td(on)  
tr  
V
= 15V  
GS  
V
= 300V  
DD  
td(off)  
55  
Turn-off Delay Time  
Fall Time  
I
= 73A @ 25°C  
D
tf  
R
= 0.6Ω  
8
G
INDUCTIVESWITCHING@25°C  
6
Eon  
Eoff  
1515  
1745  
2345  
Turn-on Switching Energy  
V
= 400V, V = 15V  
GS  
DD  
I
Turn-off Switching Energy  
= 73A, R = 5Ω  
D
G
µJ  
INDUCTIVESWITCHING@125°C  
6
Eon  
Eoff  
Turn-on Switching Energy  
V
= 400V V = 15V  
GS  
DD  
Turn-off Switching Energy  
I
= 73A, R = 5Ω  
1950  
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
73  
UNIT  
Continuous Source Current (Body Diode)  
IS  
Amps  
1
ISM  
VSD  
Pulsed Source Current  
Diode Forward Voltage  
(Body Diode)  
292  
1.3  
15  
2
(VGS = 0V, IS = -73A)  
Volts  
V/ns  
dv  
5
dv  
/
Peak Diode Recovery  
/
dt  
dt  
Reverse Recovery Time  
(IS = -73A, di/dt = 100A/µs)  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
300  
600  
trr  
ns  
µC  
Reverse Recovery Charge  
(IS = -73A, di/dt = 100A/µs)  
2.6  
10  
17  
34  
Qrr  
Peak Recovery Current  
(IS = -73A, di/dt = 100A/µs)  
IRRM  
Amps  
THERMALCHARACTERISTICS  
Symbol Characteristic  
MIN  
TYP  
MAX  
0.14  
40  
UNIT  
RθJC  
RθJA  
Junction to Case  
°C/W  
Junction to Ambient  
1 Repetitive Rating: Pulse width limited by maximum junction  
temperature  
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%  
3 See MIL-STD-750 Method 3471  
4 Starting T = +25°C, L = 1.20mH, R = 25, Peak I = 73A  
j
G
L
dv  
5
/
numbers reflect the limitations of the test circuit rather than the  
di  
dt  
device itself.  
I
-I 73A  
/
700A/µs  
V
R 600V T 150°C  
dt  
S
D
J
6 Eon includes diode reverse recovery. See figures 18, 20.  
APTReservestherighttochange,withoutnotice,thespecificationsandinforationcontainedherein.  
0.16  
0.14  
0.9  
0.12  
0.7  
0.10  
0.08  
0.5  
Note:  
t
0.06  
1
0.3  
t
2
0.04  
t
1
Duty Factor D =  
/
t
2
Peak T = P  
x Z + T  
0.02  
0
0.1  
J
DM  
θJC C  
0.05  
SINGLEPULSE  
10-3  
10-5  
10-4  
10-2  
10-1  
1.0  
RECTANGULARPULSEDURATION(SECONDS)  
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION  
Typical Performance Curves  
APT60M75L2FLL  
200  
180  
160  
140  
120  
100  
80  
V
=15 &10V  
GS  
8V  
7.5V  
7V  
RC MODEL  
Junction  
temp. (°C)  
6.5  
0.0484  
0.0903  
0.0236F  
0.400F  
Power  
(watts)  
6V  
60  
40  
5.5V  
20  
0
Case temperature. (°C)  
0
5
10  
15  
20  
25  
30  
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)  
DS  
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL  
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS  
180  
1.40  
NORMALIZED TO  
V
> I (ON) x  
250µSEC. PULSE TEST  
@ <0.5 % DUTY CYCLE  
R
MAX.  
DS(ON)  
DS  
D
V
= 10V  
@
I
= 36.5A  
160  
140  
120  
100  
80  
GS  
D
1.30  
1.20  
1.10  
1.00  
T
= -50°C  
J
V
=10V  
GS  
T
J
= +25°C  
60  
V
=20V  
T
= +125°C  
GS  
J
40  
0.90  
0.80  
20  
0
0
1
2
3
4
5
6
7
8
9
0
20  
40  
60  
80  
100 120 140  
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)  
I ,DRAINCURRENT(AMPERES)  
GS  
D
FIGURE4, TRANSFERCHARACTERISTICS  
FIGURE5,R  
vsDRAINCURRENT  
DS(ON)  
1.15  
1.10  
1.05  
1.00  
80  
70  
60  
50  
40  
30  
20  
0.95  
0.90  
10  
0
25  
50  
75  
100  
125  
150  
-50 -25  
0
25  
50 75 100 125 150  
T ,CASETEMPERATURE(°C)  
T ,JUNCTIONTEMPERATURE(°C)  
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE  
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE  
2.5  
1.2  
I
= 36.5A  
= 10V  
D
V
GS  
1.1  
1.0  
0.9  
0.8  
2.0  
1.5  
1.0  
0.5  
0.0  
0.7  
0.6  
-50 -25  
0
25 50  
75 100 125 150  
-50 -25  
0
25  
50  
75 100 125 150  
T ,JUNCTIONTEMPERATURE(°C)  
T ,CASETEMPERATURE(°C)  
J
C
FIGURE8, R  
vs. TEMPERATURE  
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE  
DS(ON)  
APT60M75L2FLL  
292  
20,000  
10,000  
OPERATIONHERE  
LIMITEDBYR (ON)  
DS  
C
iss  
100  
50  
100µS  
C
oss  
rss  
1,000  
10  
1mS  
100  
10  
C
10mS  
T
=+25°C  
C
T =+150°C  
J
SINGLEPULSE  
10  
1
16  
12  
1
100  
600  
0
V
10  
20  
30  
40  
50  
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)  
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)  
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE  
DS  
DS  
FIGURE10,MAXIMUMSAFEOPERATINGAREA  
200  
I
= 73A  
D
100  
T =+150°C  
J
V
=120V  
DS  
T =+25°C  
J
V
=300V  
DS  
8
V
=480V  
DS  
10  
4
0
1
0
50  
100  
150  
200  
250  
300  
0.3  
V
0.5  
0.7  
0.9  
1.1  
1.3  
1.5  
Q ,TOTALGATECHARGE(nC)  
,SOURCE-TO-DRAINVOLTAGE(VOLTS)  
g
SD  
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE  
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE  
160  
180  
V
= 400V  
DD  
= 5Ω  
R
T
160  
140  
120  
100  
80  
G
140  
t
= 125°C  
d(off)  
J
L = 100µH  
120  
V
= 400V  
DD  
= 5Ω  
100  
80  
R
T
t
G
f
= 125°C  
J
L = 100µH  
t
r
60  
60  
40  
40  
t
d(on)  
20  
0
20  
0
10  
30  
50  
70  
(A)  
90  
110  
130  
10  
30  
50  
70  
(A)  
90  
110  
130  
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT  
FIGURE 15, RISE AND FALL TIMES vs CURRENT  
5000  
4000  
3000  
2000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
V
= 400V  
V
I
= 400V  
DD  
= 5Ω  
DD  
= 73A  
R
T
G
D
= 125°C  
T
= 125°C  
E
off  
J
J
L = 100µH  
L = 100µH  
EON includes  
EON includes  
diode reverse recovery  
diode reverse recovery  
E
off  
E
E
on  
on  
1000  
0
10  
30  
50  
70  
(A)  
90  
110  
130  
0
5
10 15 20 25 30 35 40 45 50  
I
R ,GATERESISTANCE(Ohms)  
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT  
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE  
APT60M75L2FLL  
90%  
GateVoltage  
DrainCurrent  
10%  
T 125°C  
T 125°C  
J
J
GateVoltage  
td(off)  
DrainVoltage  
td(on)  
90%  
tf  
90%  
tr  
10%  
10%  
5%  
5%  
0
DrainVoltage  
DrainCurrent  
SwitchingEnergy  
SwitchingEnergy  
Figure18,Turn-onSwitchingWaveformsandDefinitions  
Figure19,Turn-offSwitchingWaveformsandDefinitions  
APT60DF60  
VDS  
ID  
VDD  
G
D.U.T.  
Figure 20, Inductive Switching Test Circuit  
TO-264MAXTM(L2)PackageOutline  
4.60 (.181)  
5.21 (.205)  
19.51 (.768)  
20.50 (.807)  
1.80 (.071)  
2.01 (.079)  
5.79 (.228)  
6.20 (.244)  
25.48 (1.003)  
26.49 (1.043)  
2.29 (.090)  
2.69 (.106)  
2.29 (.090)  
2.69 (.106)  
19.81 (.780)  
21.39 (.842)  
Gate  
Drain  
Source  
0.48 (.019)  
0.84 (.033)  
2.59 (.102)  
3.00 (.118)  
0.76 (.030)  
1.30 (.051)  
2.79 (.110)  
3.18 (.125)  
5.45 (.215) BSC  
2-Plcs.  
Dimensions in Millimeters and (Inches)  
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522  
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.  

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