APTC80A15SCTG [MICROSEMI]
Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module; 相脚意甲和碳化硅二极管并联超级结MOSFET功率模块
| 型号： | APTC80A15SCTG |
| 厂家： | 
Microsemi |
| 描述： | Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module |
| 文件： | 总7页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTC80A15SCTG
Phase leg
VDSS = 800V
Serie & SiC parallel diodes
Super Junction
RDSon = 150mΩ max @ Tj = 25°C
ID = 28A @ Tc = 25°C
Application
•
•
•
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
NT C2
VBUS
Features
Q1
•
-
Ultra low RDSon
G1
OUT
-
-
-
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
S1
Q2
•
Parallel SiC Schottky Diode
-
-
-
-
Zero reverse recovery
G2
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
0/VBUS
S2
NT C1
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
•
•
OUT
VBUS
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
OUT
0/ VB US
S1
G1
S2
G2
NTC2
NTC1
•
•
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Drain - Source Breakdown Voltage
Max ratings
Unit
VDSS
800
V
Tc = 25°C
Tc = 80°C
28
ID
Continuous Drain Current
A
21
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
112
±30
150
277
17
0.5
670
Gate - Source Voltage
Drain - Source ON Resistance
V
mΩ
W
Maximum Power Dissipation
Tc = 25°C
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTC80A15SCTG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 800V Tj = 25°C
50
µA
375
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
VGS = 10V, ID = 14A
150
3.9
mΩ
VGS = VDS, ID = 2mA
2.1
3
V
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
4507
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
2092
108
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
180
22
VGS = 10V
VBus = 400V
ID = 28A
nC
90
Inductive switching @125°C
VGS = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
10
13
83
35
VBus = 533V
ns
ID = 28A
RG = 2.5Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5Ω
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
291
278
510
342
µJ
µJ
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
200
V
µA
A
Tj = 25°C
VR=200V
250
500
Tj = 125°C
Tc = 85°C
30
1.1
1.4
0.9
IF = 30A
IF = 60A
1.15
VF
Diode Forward Voltage
V
IF = 30A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
24
48
33
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 30A
VR = 133V
di/dt = 200A/µs
Qrr
nC
150
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2 – 7
APTC80A15SCTG
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
1200
V
µA
A
Tj = 25°C
Tj = 175°C
Tc = 125°C
Tj = 25°C
Tj = 175°C
150
300 3000
15
1.6
2.6
600
VR=1200V
1.8
3.0
VF
Diode Forward Voltage
IF = 15A
V
IF = 15A, VR = 600V
di/dt =1000A/µs
QC
Q
Total Capacitive Charge
Total Capacitance
42
nC
pF
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
135
99
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
0.45
RthJC
Junction to Case Thermal Resistance
°C/W
V
Series diode
1.2
1.0
Parallel diode
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
2500
-40
-40
-40
2.5
150
125
100
4.7
°C
TSTG
Storage Temperature Range
TC
Operating Case Temperature
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3 – 7
APTC80A15SCTG
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.01
0.05
0
0.05
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
80
70
60
50
40
30
20
10
100
80
60
40
20
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15&10V
6.5V
TJ=-55°C
6V
5.5V
TJ=125°C
5V
4.5V
4V
TJ=25°C
TJ=125°C
TJ=-55°C
0
0
0
1
2
3
4
5
6
7
8
5
10
15
20
25
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
1.2
1.1
1
30
25
20
15
10
5
Normalized to
VGS=10V @ 14A
VGS=10V
VGS=20V
0.9
0
0.8
0
25
50
75
100
125
150
10
20
30
40
50
60
TC, Case Temperature (°C)
ID, Drain Current (A)
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4 – 7
APTC80A15SCTG
Breakdown Voltage vs Temperature
ON resistance vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.15
1.10
1.05
1.00
0.95
0.90
VGS=10V
ID= 14A
-50
0
50
100
150
-50
0
50
100
150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1000
1.2
1.1
1.0
0.9
0.8
0.7
100
10
1
limited by
100µs
RDSon
1ms
Single pulse
TJ=150°C
TC=25°C
100ms
0
-50
0
50
100
150
1
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Gate Charge vs Gate to Source Voltage
Capacitance vs Drain to Source Voltage
100000
16
ID=28A
TJ=25°C
14
12
10
8
VDS=160V
VDS=400V
10000
1000
100
Ciss
Coss
Crss
VDS=640V
6
4
2
0
10
0
40
80
120
160
200
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 – 7
APTC80A15SCTG
Delay Times vs Current
Rise and Fall times vs Current
50
40
30
20
10
0
100
80
60
40
20
0
td(off)
tf
VDS=533V
RG=2.5Ω
TJ=125°C
L=100µH
VDS=533V
RG=2.5Ω
TJ=125°C
L=100µH
tr
td(on)
10
20
30
40
50
10
20
30
40
50
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
900
750
600
450
300
150
0
2500
2000
1500
1000
500
VDS=533V
VDS=533V
ID=28A
TJ=125°C
RG=2.5Ω
TJ=125°C
L=100µH
Eon
Eoff
L=100µH
Eoff
Eon
Eoff
0
0
5
10
15
20
25
10
20
30
40
50
ID, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
Operating Frequency vs Drain Current
400
350
300
250
200
150
100
50
100
10
1
TJ=150°C
ZVS
ZCS
VDS=533V
D=50%
RG=2.5Ω
TJ=25°C
TJ=125°C
TJ=75°C
Hard
Switching
0
6
8
10 12 14 16 18 20 22 24 26
0.2
0.6
1
1.4
1.8
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
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6 – 7
APTC80A15SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.2
1
0.9
0.8
0.6
0.4
0.2
0
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
30
25
20
15
10
5
600
450
TJ=25°C
TJ=75°C
300
TJ=75°C
TJ=125°C
TJ=125°C
TJ=175°C
TJ=175°C
150
0
TJ=25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
400 600 800 1000 1200 1400 1600
VR Reverse Voltage (V)
VF Forward Voltage (V)
Capacitance vs.Reverse Voltage
1200
1000
800
600
400
200
0
1
10
100
1000
V
R Reverse Voltage
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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