APTDC30H601G [MICROSEMI]
SiC Diode Full Bridge Power Module; 碳化硅二极管全桥电源模块
| 型号： | APTDC30H601G |
| 厂家： | 
Microsemi |
| 描述： | SiC Diode Full Bridge Power Module |
| 文件： | 总3页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTDC30H601G
SiC Diode Full Bridge
Power Module
VRRM = 600V
IF = 30A @ Tc = 80°C
3
4
Application
•
•
•
•
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
CR1
CR3
CR4
5
6
1
2
High speed rectifiers
Features
CR2
7
•
-
-
-
-
SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
8
9 10
•
•
Very low stray inductance
High level of integration
Benefits
•
Outstanding performance at high frequency
operation
•
•
•
•
•
•
Low losses
Low noise switching
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
All multiple inputs and outputs must be shorted together
3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10
Absolute maximum ratings
Symbol
VR
Parameter
Maximum DC reverse Voltage
Max ratings
Unit
600
V
VRRM
Maximum Peak Repetitive Reverse Voltage
Maximum Average Forward Current
IF(AV)
IFSM
Duty cycle = 50% TC = 80°C
30
A
TC = 25°C
Non-Repetitive Forward Surge Current
10 µs
370
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTDC30H601G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 175°C
Tj = 25°C
Tj = 175°C
1.6
2
150
1.8
2.4
600
VF
IRM
QC
C
Diode Forward Voltage
Maximum Reverse Leakage Current
Total Capacitive Charge
Total Capacitance
IF = 30A
V
VR = 600V
µA
nC
pF
300 3000
IF = 30A, VR = 300V
di/dt = 1000A/µs
42
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
195
150
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
TSTG
TC
Junction to Case Thermal Resistance
1
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
2.5
175
125
100
4.7
80
°C
Operating Case Temperature
Torque Mounting torque
Wt Package Weight
To heatsink
M4
N.m
g
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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APTDC30H601G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.2
1
0.9
0.8
0.6
0.4
0.2
0
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
60
50
40
30
20
10
600
500
400
TJ=25°C
TJ=175°C
TJ=75°C
TJ=175°C
TJ=125°C
300
200
100
0
TJ=75°C
TJ=125°C
TJ=25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
200 300 400 500 600 700 800
VR Reverse Voltage (V)
VF Forward Voltage (V)
Capacitance vs.Reverse Voltage
1200
1000
800
600
400
200
0
1
10
100
1000
VR Reverse Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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