APTDF100H100G [MICROSEMI]
Diode Full Bridge Power Module; 二极管全桥电源模块
| 型号： | APTDF100H100G |
| 厂家： | 
Microsemi |
| 描述： | Diode Full Bridge Power Module |
| 文件： | 总4页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTDF100H100G
Diode Full Bridge
Power Module
VRRM = 1000V
IC = 100A @ Tc = 70°C
Application
+
•
•
•
•
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High speed rectifiers
AC1
AC2
Features
•
•
•
•
•
•
Ultra fast recovery times
Soft recovery characteristics
High blocking voltage
High current
-
Low leakage current
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
Benefits
•
High level of integration
Outstanding performance at high frequency
operation
Low losses
Low noise switching
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
AC2
AC1
•
•
•
•
•
•
-
+
Absolute maximum ratings
Symbol
VR
Parameter
Maximum DC reverse Voltage
Max ratings
Unit
1000
V
VRRM
Maximum Peak Repetitive Reverse Voltage
TC = 25°C
TC = 70°C
130
100
130
500
Maximum Average Forward
IF(AV)
Duty cycle = 50%
Current
A
IF(RMS)
IFSM
RMS Forward Current
Non-Repetitive Forward Surge Current
Duty cycle = 50% TC = 45°C
TC = 45°C
8.3ms
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTDF100H100G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
IF = 100A
Min Typ Max Unit
2.1
2.3
1.7
2.7
VF
Diode Forward Voltage
IF = 150A
V
IF = 100A
Tj = 125°C
Tj = 25°C
Tj = 125°C
100
500
IRM
CT
Maximum Reverse Leakage Current
Junction Capacitance
VR = 1000V
VR = 1000V
µA
pF
120
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
IF=1A,VR=30V
trr
trr
Reverse Recovery Time
Reverse Recovery Time
Tj = 25°C
45
ns
di/dt = 100A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
290
340
685
3645
6
ns
nC
A
IF = 100A
VR = 667V
Qrr
Reverse Recovery Charge
Reverse Recovery Current
di/dt = 200A/µs
IRRM
18
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
160
7100
70
ns
nC
A
IF = 100A
VR = 667V
Tj = 125°C
di/dt=1000A/µs
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case Thermal Resistance
0.55 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
2.5
V
175
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
2 - 4
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APTDF100H100G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
300
250
200
150
100
50
400
350
300
250
200
150
100
50
TJ=125°C
VR=667V
TJ=175°C
TJ=125°C
150 A
100 A
50 A
TJ=-55°C
TJ=25°C
0
0
0
200 400 600 800 1000 1200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VF, Anode to Cathode Voltage (V)
-diF/dt (A/µs)
IRRM vs. Current Rate of Charge
QRR vs. Current Rate Charge
9
8
7
6
5
4
3
80
70
60
50
40
30
20
10
TJ=125°C
VR=667V
TJ=125°C
VR=667V
100 A
50 A
150 A
150 A
100 A
50 A
2
0
200 400 600 800 1000 1200
0
200 400 600 800 1000 1200
-diF/dt (A/µs)
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
800
700
600
500
400
300
200
100
0
150
Duty Cycle = 0.5
TJ=175°C
125
100
75
50
25
0
0
25
50
75 100 125 150 175
1
10
100
1000
VR, Reverse Voltage (V)
Case Temperature (ºC)
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APTDF100H100G
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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