APTGF25X120E2G [MICROSEMI]

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-17;
APTGF25X120E2G
型号: APTGF25X120E2G
厂家: Microsemi    Microsemi
描述:

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-17

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APTGF25X120E2  
APTGF25X120P2  
VCES = 1200V  
IC = 25A @ Tc = 80°C  
3 Phase bridge  
NPT IGBT Power Module  
Application  
Features  
AC Motor control  
Non Punch Through (NPT) IGBT®  
-
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
Pin out: APTGF25X120E2 (Long pins)  
N-  
U
V
W
P+  
Kelvin emitter for easy drive  
Very low stray inductance  
High level of integration  
1 2 3 4 5 6 7 8 9 10 11 12  
Benefits  
Stable temperature behavior  
Very rugged  
Pin out: APTGF25X120P2 (Short pins)  
N-  
U
V
W
P+  
Solderable terminals for easy PCB mounting  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
1
2
3
4
5
6
7
8
9
10  
11 12  
All ratings @ Tj = 25°C unless otherwise specified  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
35  
25  
70  
±20  
200  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
Tj = 150°C  
SCSOA Short circuit Safe Operating Area  
250A@1200V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 4  
APT website – http://www.advancedpower.com  
APTGF25X120E2  
APTGF25X120P2  
Electrical Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
1200  
BVCES Collector - Emitter Breakdown Voltage  
VGE = 0V, IC = 500µA  
V
Tj = 25°C  
0.5  
2
0.8  
VGE = 0V  
VCE = 1200V  
ICES  
Zero Gate Voltage Collector Current  
mA  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
2.5  
3.1  
5.5  
3.0  
V
GE = 15V  
VCE(on) Collector Emitter on Voltage  
VGE(th) Gate Threshold Voltage  
V
IC = 25A  
3.7  
6.5  
180  
VGE = VCE , IC = 1mA  
VGE = 20V, VCE = 0V  
4.5  
V
nA  
IGES  
Gate – Emitter Leakage Current  
Dynamic Characteristics  
Symbol Characteristic  
Test Conditions  
VGE = 0V  
VCE = 25V  
f = 1MHz  
Min Typ Max Unit  
Cies  
Coes  
Cres  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
1650  
pF  
250  
110  
75  
Inductive Switching (125°C)  
Td(on)  
150  
130  
600  
100  
V
GE = ±15V  
Tr  
Rise Time  
65  
400  
50  
ns  
VBus = 600V  
IC = 25A  
RG = 47  
Td(off) Turn-off Delay Time  
Tf Fall Time  
Reverse diode ratings and characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
IF = 25A  
Tj = 25°C  
Tj = 125°C  
2.3  
1.8  
2.8  
VF  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
V
V
GE = 0V  
IF = 25A  
VR = 600V  
di/dt =800A/µs  
IF = 25A  
VR = 600V  
di/dt =800A/µs  
Tj = 125°C  
0.13  
µs  
Tj = 25°C  
2.3  
6
Qrr  
Reverse Recovery Charge  
µC  
Tj = 125°C  
Thermal and package characteristics  
Symbol Characteristic  
Min Typ Max Unit  
IGBT  
Diode  
0.6  
1
°C/W  
RthJC  
Junction to Case  
RMS Isolation Voltage, any terminal to case t =1 min,  
I isol<1mA, 50/60Hz  
VISOL  
2500  
V
TJ  
TSTG  
TC  
Operating junction temperature range  
Storage Temperature Range  
Operating Case Temperature  
-40  
-40  
-40  
2
150  
125  
125  
3.5  
°C  
N.m  
g
Torque Mounting torque  
Wt Package Weight  
To Heatsink  
M5  
185  
2 - 4  
APT website – http://www.advancedpower.com  
APTGF25X120E2  
APTGF25X120P2  
Package outline  
Pin out: APTGF25X120E2 (Long pins)  
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :  
3 - 4  
APT website – http://www.advancedpower.com  
APTGF25X120E2  
APTGF25X120P2  
Package outline  
Pin out: APTGF25X120P2 (Short pins)  
ALL DIMENSIONS MARKED " * " ARE TOLERENCEDAS :  
APT reserves the right to change, without notice, the specifications and information contained herein  
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522  
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.  
4 - 4  
APT website – http://www.advancedpower.com  

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