APTGT200DA60T3AG [MICROSEMI]
Boost chopper Trench + Field Stop IGBT Power Module; 升压斩波沟道+场截止IGBT功率模块
| 型号： | APTGT200DA60T3AG |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT200DA60T3AG
Boost chopper
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 200A @ Tc = 100°C
Application
•
•
•
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
•
Trench + Field Stop IGBT Technology
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
•
•
•
•
•
Very low stray inductance
Kelvin emitter for easy drive
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
28 27 26 25
23 22
20 19 18
29
30
16
15
Benefits
31
32
14
13
•
•
•
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
2
3
4
7
8
10 11
12
Pins 29/30/31/32 must be shorted together
•
•
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
600
Unit
V
VCES
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 100°C
TC = 25°C
290
200
400
±20
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 150°C
750
RBSOA Reverse Bias Safe Operating Area
400A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 5
www.microsemi.com
APTGT200DA60T3AG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
1.9
µA
Tj = 25°C
1.5
1.7
5.8
V
GE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 200A
Tj = 150°C
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
5.0
6.5
400
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
12.3
0.8
0.4
V
CE = 25V
nF
f = 1MHz
VGE= ±15V ; VCE=300V
IC=200A
QG
Gate charge
2.2
µC
Inductive Switching (25°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
115
45
V
V
GE = ±15V
Bus = 300V
ns
ns
Td(off) Turn-off Delay Time
225
IC = 200A
RG = 2Ω
Tf
Fall Time
55
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 200A
Td(on)
Tr
Turn-on Delay Time
Rise Time
130
50
300
70
1
Td(off) Turn-off Delay Time
Tf
Fall Time
RG = 2Ω
Tj = 25°C
V
V
GE = ±15V
Bus = 300V
Eon
Turn on Energy
mJ
mJ
A
Tj = 150°C
Tj = 25°C
Tj = 150°C
1.8
5.7
7
IC = 200A
RG = 2Ω
Eoff
Isc
Turn off Energy
Short Circuit data
V
GE ≤15V ; VBus = 360V
1000
tp ≤ 6µs ; Tj = 150°C
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
600
V
Tj = 25°C
250
500
IRM
VR=600V
µA
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
IF
200
1.6
1.5
A
V
IF = 200A
2
VF
Diode Forward Voltage
V
GE = 0V
125
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
220
9
IF = 200A
VR = 300V
di/dt =2800A/µs
20
2.2
4.8
2 – 5
www.microsemi.com
APTGT200DA60T3AG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.20
0.31
°C/W
V
RthJC
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
2.5
175
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
Wt Package Weight
To heatsink
M4
N.m
g
110
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
Characteristic
Resistance @ 25°C
Min Typ Max Unit
50
5
3952
4
kΩ
%
K
T25 = 298.15 K
%
∆B/B
TC=100°C
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
⎡
⎤
⎥
⎦
⎛
⎞
1
1
⎜
⎟
⎟
exp B
−
⎢
25/ 85
⎜
T25
T
⎝
⎠
⎣
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
3 – 5
www.microsemi.com
APTGT200DA60T3AG
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
Output Characteristics
400
400
350
300
250
200
150
100
50
VGE=19V
TJ = 150°C
350
300
VGE=13V
VGE=15V
TJ=150°C
250
200
150
VGE=9V
100
50
0
TJ=25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
400
350
300
250
200
150
100
50
14
12
10
8
VCE = 300V
GE = 15V
Eoff
TJ=25°C
V
RG = 2Ω
TJ = 150°C
Er
6
TJ=125°C
4
TJ=150°C
2
Eon
TJ=25°C
0
0
0
50 100 150 200 250 300 350 400
5
6
7
8
9
10
11
12
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
16
500
400
300
200
100
0
VCE = 300V
V
GE =15V
IC = 200A
12
8
Eoff
TJ = 150°C
Eon
Er
VGE=15V
TJ=150°C
RG=2Ω
4
Eon
0
0
2
4
6
8
10
12
14
0
100 200 300 400 500 600 700
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
0.2
0.15
0.1
0.05
0
IGBT
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.01
0.05
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration in Seconds
4 – 5
www.microsemi.com
APTGT200DA60T3AG
Operating Frequency vs Collector Current
Forward Characteristic of diode
400
120
100
80
60
40
20
0
VCE=300V
350
300
250
ZVS
D=50%
RG=2Ω
ZCS
TJ=150°C
Tc=85°C
200
TJ=125°C
150
TJ=150°C
100
Hard
switching
50
TJ=25°C
0
0
0.4
0.8
1.2
1.6
2
2.4
0
50
100
150
200
250
VF (V)
IC (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
Diode
0.9
0.25
0.2
0.7
0.5
0.3
0.15
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 – 5
www.microsemi.com
相关型号：
©2020 ICPDF网 联系我们和版权申明