APTM100DSK35T3G [MICROSEMI]
Dual Buck chopper MOSFET Power Module; 双降压斩波MOSFET功率模块
| 型号： | APTM100DSK35T3G |
| 厂家： | 
Microsemi |
| 描述： | Dual Buck chopper MOSFET Power Module |
| 文件： | 总6页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM100DSK35T3G
VDSS = 1000V
RDSon = 350mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 22A @ Tc = 25°C
Application
13 14
•
•
AC and DC motor control
Switched Mode Power Supplies
Q1
Q2
Features
11
10
18
19
•
Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
22
23
7
8
Low input and Miller capacitance
Low gate charge
CR1
CR2
32
Avalanche energy rated
Very rugged
•
•
Kelvin source for easy drive
Very low stray inductance
29
15
30
31
R1
-
Symmetrical design
16
•
•
Internal thermistor for temperature monitoring
High level of integration
Benefits
28 27 26 25
23 22
20 19 18
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
29
30
16
15
31
32
14
13
•
•
Low profile
Each leg can be easily paralleled to achieve a single
buck of twice the current capability
RoHS Compliant
2
3
4
7
8
10 11
12
•
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
22
ID
Continuous Drain Current
A
Tc = 80°C
17
IDM
VGS
RDSon
PD
Pulsed Drain current
88
Gate - Source Voltage
±30
420
390
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
Tc = 25°C
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
25
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1 – 6
APTM100DSK35T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 1000V
Tj = 25°C
Tj = 125°C
100
500
420
5
±100
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 800V
VGS = 10V, ID = 11A
VGS = VDS, ID = 2.5mA
VGS = ±30V, VDS = 0V
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
350
mΩ
V
nA
3
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
5.2
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
0.88
0.16
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
186
24
122
18
12
155
40
VGS = 10V
VBus = 500V
ID = 22A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ns
ID = 22A
RG = 5Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5Ω
Eon
Turn-on Switching Energy
900
623
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5Ω
1423
779
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
1000
V
µA
A
Tj = 25°C
VR=1000V
250
500
Tj = 125°C
Tc = 70°C
30
1.9
2.2
1.7
IF = 30A
IF = 60A
2.3
VF
Diode Forward Voltage
V
IF = 30A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
290
390
670
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 30A
VR = 667V
di/dt=200A/µs
Qrr
nC
2350
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2 – 6
APTM100DSK35T3G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
transistor
Diode
0.32
1.2
RthJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
2.5
150
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
Wt
To heatsink
M4
N.m
g
Package Weight
110
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3 – 6
APTM100DSK35T3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
0.7
0.25
0.2
0.5
0.3
0.15
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15, 10&8V
7V
6.5V
6V
TJ=25°C
5.5V
5V
TJ=125°C
TJ=-55°C
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
V
DS, Drain to Source Voltage (V)
V
GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
1.2
1.1
1
25
20
15
10
5
Normalized to
GS=10V @ 11A
V
VGS=10V
VGS=20V
0.9
0.8
0
0
10
20
30
40
50
60
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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4 – 6
APTM100DSK35T3G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VGS=10V
ID=11A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
100
10
1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by RDSon
1ms
Single pulse
TJ=150°C
TC=25°C
10ms
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
12
10
8
ID=22A
TJ=25°C
VDS=200V
VDS=500V
10000
1000
100
Ciss
VDS=800V
6
Coss
4
2
Crss
0
0
50
100
150
200
250
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 – 6
APTM100DSK35T3G
Delay Times vs Current
Rise and Fall times vs Current
80
180
160
140
120
100
80
60
40
20
0
VDS=670V
RG=5Ω
td(off)
70
60
50
40
30
20
10
0
tf
TJ=125°C
L=100µH
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
tr
td(on)
0
10
20
30
40
50
0
10
20
30
40
50
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
3.5
3
2.5
2
VDS=670V
VDS=670V
RG=5Ω
Eon
ID=22A
TJ=125°C
L=100µH
Eoff
TJ=125°C
L=100µH
2.5
2
Eoff
1.5
1
Eon
1.5
1
Eoff
0.5
0
0.5
0
0
10
20
30
40
50
0
5
10
15
20
25
30
35
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
250
225
200
175
150
125
100
75
ZVS
ZCS
TJ=150°C
TJ=25°C
VDS=670V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
50
25
0
Hard
switching
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
5
8
10
13
15
18
20
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6 – 6
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