APTM100DUM90G [MICROSEMI]
Dual Common Source MOSFET Power Module; 双共源MOSFET功率模块
| 型号： | APTM100DUM90G |
| 厂家： | 
Microsemi |
| 描述： | Dual Common Source MOSFET Power Module |
| 文件： | 总6页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM100DUM90G
VDSS = 1000V
Dual Common Source
RDSon = 90mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 78A @ Tc = 25°C
Application
D1
D2
Q1
Q2
•
•
•
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
G1
S1
G2
S2
Features
•
Power MOS 7® MOSFETs
S
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
G1
S1
D1
S
D2
Benefits
•
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
S2
G2
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
1000
78
Unit
VDSS
Drain - Source Breakdown Voltage
V
Tc = 25°C
ID
Continuous Drain Current
A
Tc = 80°C
59
IDM
VGS
Pulsed Drain current
312
Gate - Source Voltage
±30
V
mΩ
W
RDSon
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
105
PD
IAR
EAR
EAS
Tc = 25°C
1250
25
50
3000
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTM100DUM90G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 1000V
Tj = 25°C
Tj = 125°C
400
2000
105
5
±250
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 800V
VGS = 10V, ID = 39A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
90
mΩ
V
nA
3
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
20.7
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
3.5
0.64
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
744
VGS = 10V
VBus = 500V
ID = 78A
nC
Gate – Source Charge
Gate – Drain Charge
96
488
18
12
155
40
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ns
ID = 78A
RG =1.2Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 78A, RG = 1.2Ω
Eon
Turn-on Switching Energy
3.6
2.5
5.7
3.1
mJ
mJ
Eoff
Eon
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 78A, RG = 1.2Ω
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IS
Continuous Source current
Tc = 25°C
Tc = 80°C
78
A
(Body diode)
59
1.3
10
VSD
Diode Forward Voltage
VGS = 0V, IS = - 78A
V
dv/dt Peak Diode Recovery X
V/ns
trr
Reverse Recovery Time
1170
65.1
ns
IS = - 78A, VR = 670V
diS/dt = 400A/µs
Qrr
Reverse Recovery Charge
µC
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 78A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
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2 – 6
APTM100DUM90G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case Thermal Resistance
0.1
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
2500
-40
-40
-40
3
150
125
100
5
°C
TSTG
Storage Temperature Range
Operating Case Temperature
TC
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
3.5
280
Wt
Package Weight
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3 – 6
APTM100DUM90G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.7
0.08
0.06
0.04
0.02
0
0.5
0.3
Single Pulse
0.01
0.1
0.05
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
240
200
160
120
80
320
280
240
200
160
120
80
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15, 10&8V
7V
6.5V
6V
TJ=25°C
5.5V
5V
40
40
TJ=125°C
TJ=-55°C
0
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
V
DS, Drain to Source Voltage (V)
V
GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
1.2
1.1
1
80
70
60
50
40
30
20
10
0
Normalized to
GS=10V @ 39A
V
VGS=10V
VGS=20V
0.9
0.8
0
40
80
120 160 200 240
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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4 – 6
APTM100DUM90G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VGS=10V
ID=39A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by RDSon
1ms
Single pulse
TJ=150°C
TC=25°C
10ms
1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
12
10
8
ID=78A
TJ=25°C
VDS=200V
VDS=500V
Ciss
10000
1000
100
Coss
VDS=800V
6
Crss
4
2
0
0
200
400
600
800
1000
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 – 6
APTM100DUM90G
Delay Times vs Current
Rise and Fall times vs Current
80
60
40
20
0
200
160
120
80
VDS=670V
tf
RG=1.2Ω
TJ=125°C
L=100µH
td(off)
VDS=670V
RG=1.2Ω
TJ=125°C
L=100µH
tr
40
td(on)
0
20 40 60 80 100 120 140 160
20 40
60
80 100 120 140 160
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
14
12
10
8
10
8
VDS=670V
ID=78A
Eoff
VDS=670V
RG=1.2Ω
TJ=125°C
L=100µH
Eon
TJ=125°C
L=100µH
Eoff
6
Eon
6
4
4
Eoff
2
2
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
250
200
150
100
ZVS
ZCS
TJ=150°C
TJ=25°C
VDS=670V
D=50%
RG=1.2Ω
50 TJ=125°C
Hard
switching
TC=75°C
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
0
10 20 30 40 50 60 70
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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