APTM120SK68T1G [MICROSEMI]
Buck chopper MOSFET Power Module; 降压斩波器的MOSFET功率模块
| 型号： | APTM120SK68T1G |
| 厂家： | 
Microsemi |
| 描述： | Buck chopper MOSFET Power Module |
| 文件： | 总5页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM120SK68T1G
VDSS = 1200V
Buck chopper
MOSFET Power Module
R
DSon = 680mΩ typ @ Tj = 25°C
ID = 15A @ Tc = 25°C
11
5
6
Application
•
•
AC and DC motor control
Switched Mode Power Supplies
Q1
7
8
Features
NTC
3
4
•
Power MOS 8™ MOSFETs
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
CR2
1
•
•
•
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
12
2
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
•
•
Low profile
RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
15
11
V
Tc = 25°C
Tc = 80°C
ID
Continuous Drain Current
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
90
±30
816
357
V
mΩ
W
PD
Maximum Power Dissipation
Tc = 25°C
IAR
Avalanche current (repetitive and non repetitive)
12
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 5
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APTM120SK68T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
DS =1200V
VGS = 0V
Min Typ Max Unit
Tj = 25°C
100
V
IDSS
Zero Gate Voltage Drain Current
µA
Tj = 125°C
500
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
VGS = 10V, ID = 12A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
680
4
816
5
±100 nA
mΩ
V
3
IGSS
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
6696
615
80
Max Unit
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS = 0V
VDS = 25V
f = 1MHz
pF
Qg
Qgs
Qgd
Td(on)
Tr
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
260
42
VGS = 10V
V
Bus = 600V
nC
ns
ID = 12A
120
45
Resistive switching @ 25°C
V
V
GS = 15V
Bus = 800V
27
Td(off) Turn-off Delay Time
Tf Fall Time
145
42
ID = 12A
RG = 2.2Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
IRM
IF
1200
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 80°C
100
500
VR=1200V
30
2.6
3.2
1.8
IF = 30A
IF = 60A
IF = 30A
3.1
VF
Diode Forward Voltage
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
300
380
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 30A
VR = 800V
di/dt =200A/µs
360
Qrr
nC
1700
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.35
°C/W
1.2
RthJC
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
2.5
V
150
125
100
4.7
80
°C
Operating Case Temperature
Torque Mounting torque
Wt Package Weight
To heatsink
M4
N.m
g
2 – 5
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APTM120SK68T1G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B 25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
⎡
⎤
⎥
⎦
⎛
⎞
1
1
⎜
⎟
⎟
exp B
−
⎢
25/ 85
⎜
T25
T
⎝
⎠
⎣
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Typical Mosfet Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.35
0.3
0.9
0.7
0.5
0.3
0.25
0.2
0.15
0.1
0.1
0.05
Single Pulse
0.01
0.05
0
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
3 – 5
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APTM120SK68T1G
Low Voltage Output Characteristics
Low Voltage Output Characteristics
20
35
30
25
20
15
10
5
VGS=10V
TJ=125°C
TJ=25°C
15
VGS=6, 7,8 & 9V
5V
10
TJ=125°C
5
0
4.5V
0
0
5
10
15
20
25
30
0
5
10
15
20
V
DS, Drain to Source Voltage (V)
VDS, Drain to Source Voltage (V)
Normalized RDS(on) vs. Temperature
Transfert Characteristics
20
15
10
5
3
2.5
2
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5
duty cycle
VGS=10V
ID=12A
TJ=125°C
TJ=25°C
1.5
1
0.5
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
TJ, Junction Temperature (°C)
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
10000
Gate Charge vs Gate to Source
12
10
8
Ciss
ID=12A
VDS=240V
TJ=25°C
VDS=600V
1000
100
10
Coss
Crss
6
VDS=960V
4
2
0
0
50
100
150
200
0
40
80 120 160 200 240 280
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
4 – 5
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APTM120SK68T1G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
1.2
1
0.9
0.7
0.5
0.3
0.8
0.6
0.4
0.2
0
0.1
0.05
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
80
60
40
20
0
500
400
300
200
100
0
TJ=125°C
VR=800V
TJ=125°C
45 A
30 A
15 A
TJ=25°C
0.0
1.0
2.0
3.0
4.0
0
200 400 600 800 1000 1200
VF, Anode to Cathode Voltage (V)
-diF/dt (A/µs)
IRRM vs. Current Rate of Charge
QRR vs. Current Rate Charge
4
3
2
1
0
30
25
20
15
10
5
TJ=125°C
VR=800V
30 A
15 A
TJ=125°C
VR=800V
45 A
30 A
15 A
45 A
0
0
200 400 600 800 1000 1200
0
200 400 600 800 1000 1200
-diF/dt (A/µs)
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
200
160
120
80
50
Duty Cycle = 0.5
TJ=175°C
40
30
20
10
0
40
0
25
50
75
100
125
150
175
1
10
100
1000
VR, Reverse Voltage (V)
Case Temperature (ºC)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 – 5
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