APTM50HM38FG [MICROSEMI]
Full - Bridge MOSFET Power Module; 全 - 桥式MOSFET功率模块
| 型号： | APTM50HM38FG |
| 厂家： | 
Microsemi |
| 描述： | Full - Bridge MOSFET Power Module |
| 文件： | 总6页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50HM38FG
VDSS = 500V
Full - Bridge
RDSon = 38mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 90A @ Tc = 25°C
Application
VBUS
Q1
Q3
•
Welding converters
•
•
•
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
G1
S1
G3
S3
Features
Q2
Q4
•
Power MOS 7® FREDFETs
G2
S2
G4
S4
-
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
0/VBUS
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
OUT1
OUT2
•
High level of integration
G1
G2
S2
VBUS
0/VBUS
S1
Benefits
S4
•
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
S3
G4
G3
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
90
67
360
±30
45
694
46
50
2500
ID
Continuous Drain Current
A
Tc = 80°C
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
V
mΩ
W
PD
IAR
EAR
EAS
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTM50HM38FG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 500V Tj = 25°C
VGS = 0V,VDS = 400V Tj = 125°C
VGS = 10V, ID = 45A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
200
1000
45
5
±150
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
38
mΩ
V
nA
3
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
11.2
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
2.4
0.18
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
246
VGS = 10V
VBus = 250V
ID = 90A
nC
Gate – Source Charge
Gate – Drain Charge
66
130
18
35
87
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ns
ID = 90A
RG = 2Ω
Tf
Fall Time
77
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2Ω
Eon
Turn-on Switching Energy
1510
1452
2482
1692
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2Ω
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IS
Continuous Source current
Tc = 25°C
Tc = 80°C
90
A
(Body diode)
67
1.3
15
VSD
Diode Forward Voltage
VGS = 0V, IS = - 90A
V
dv/dt Peak Diode Recovery X
V/ns
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
233
499
3.8
trr
Reverse Recovery Time
ns
IS = - 90A
VR = 333V
diS/dt = 200A/µs
Qrr
Reverse Recovery Charge
µC
11.4
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 90A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
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2 – 6
APTM50HM38FG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case Thermal Resistance
0.18 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
2500
-40
-40
-40
3
V
150
125
100
5
3.5
280
°C
TSTG
Storage Temperature Range
Operating Case Temperature
TC
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3 – 6
APTM50HM38FG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
0.18
0.16
0.14
0.12
0.1
0.9
0.7
0.5
0.08
0.06
0.04
0.02
0
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
250
200
150
100
50
350
300
250
200
150
100
50
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
8V
VGS=10&15V
7.5V
7V
6.5V
6V
TJ=25°C
TJ=125°C
5.5V
TJ=-55°C
0
0
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
V
DS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
RDS(on) vs Drain Current
DC Drain Current vs Case Temperature
100
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
Normalized to
GS=10V @ 45A
VGS=10V
V
80
60
40
20
0
VGS=20V
0
50
100
150
200
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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4 – 6
APTM50HM38FG
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID=45A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by RDSon
100
10
1
1ms
Single pulse
TJ=150°C
TC=25°C
10ms
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
TC, Case Temperature (°C)
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
14
100000
10000
1000
100
VDS=100V
ID=90A
TJ=25°C
12
10
8
Ciss
VDS=250V
Coss
VDS=400V
6
Crss
4
2
10
0
0
10
20
30
40
50
0
40 80 120 160 200 240 280 320
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 – 6
APTM50HM38FG
Delay Times vs Current
Rise and Fall times vs Current
100
80
60
40
20
0
120
100
80
60
40
20
0
td(off)
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
tf
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
td(on)
tr
20
40
60
80 100 120 140
20
40
60
80
100 120 140
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
8
7
6
5
4
3
2
1
0
5
4
3
2
1
0
VDS=333V
RG=2Ω
VDS=333V
Eon
ID=90A
TJ=125°C
L=100µH
Eoff
TJ=125°C
L=100µH
Eoff
Eon
Eoff
0
5
10
15
20
25
20
40
60
80 100 120 140
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
400
350
300
250
200
150
100
50
VDS=333V
D=50%
RG=2Ω
ZVS
TJ=150°C
TJ=125°C
TC=75°C
ZCS
TJ=25°C
Hard
switching
0
1
20
30
40
50
60
70
80
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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