ARF460BG [MICROSEMI]

RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE; RF功率MOSFET N沟道增强模式


型号：	ARF460BG
厂家：	Microsemi
描述：	RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE RF功率MOSFET N沟道增强模式晶体射频场效应晶体管放大器局域网
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ARF460A/G

ARF460B/G

125V, 150W, 65MHz

RF POWER MOSFET

N-CHANNEL ENHANCEMENT MODE

Common

Source

The ARF460A and ARF460B comprise a symmetric pair of common source RF power

transistors designed for push-pull scientiﬁc, commercial, medical and industrial RF power

ampliﬁer applications up to 65MHz. They have been optimized for both linear and high

efﬁciency classes of operation.

• Speciﬁed 125 Volt, 40.68MHz Characteristics:

Output Power = 150 Watts.

• Low Cost Common Source RF Package.

• Low Vth thermal coefﬁcient.

• Low Thermal Resistance.

Gain = 13dB (Class AB)

Efﬁciency = 75% (Class C)

• Optimized SOA for Superior Ruggedness

• RoHS Compliant

Maximum Ratings

All Ratings: T_C=25°C unless otherwise speciﬁed

Symbol

Parameter

ARF460AG/BG

Unit

V_DSS

Drain-Source Voltage

500

V_DGO

I_D

Drain-Gate Voltage

Continuous Drain Current @ T_C= 25°C

Gate-Source Voltage

V_GS

P_D

±30

Total Power Dissipation @ T_C= 25°C

Junction to Case

250

R_θ

0.50

°C/W

T_J, T_STG

T_L

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063” from Case for 10 Sec.

-55 to 150

300

°C

Static Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

BV_DSS

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 μA)

On State Drain Voltage ¹(I_D(ON)= 7A, V_GS= 10V)

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 0.8V_DSS, V_GS= 0, T_C= 125°C)

Gate-Source Leakage Current (V_DS= ±30V, V_DS= 0V)

Forward Transconductance (V_DS= 25V, I_D= 7A)

Gate Threshold Voltage (V_DS= V_GS, I_D= 50mA)

500

V_DS(ON)

I_DSS

μA

250

±100

I_GSS

g_fs

3.3

5.5

mhos

Volts

V_GS(TH)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

Dynamic Characteristics

ARF460AG/BG

Symbol

C_ISS

Parameter

Test Conditions

V_GS= 0V

Min

Typ

1200

150

Max

1400

180

Unit

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

C_oss

V_DS= 150V

f = 1MHz

C_rss

t_d(ON)

t_r

V_GS= 15V

V_DD= 0.5V_DSS

t_d(off)

t_f

I_D=I_D[Cont.]@ 25°C

Turn-off Delay Time

Fall Time

R_G= 1.6Ω

4.0

Functional Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

G_PS

Common Source Ampliﬁer Power Gain

Drain Efﬁciency

f = 40.68MHz

I_dq= 50mA V_DD= 125V

P_OUT= 150W

Electrical Ruggedness VSWR 10:1

No Degradation in Output Power

1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.

Microsemi reserves the right to change, without notice, the speciﬁcations and information contained herein.

5000

C_iss

1000

500

C_oss

C_rss

100

150

V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

T_J= -55°C

→

←100uS

OPERATION HERE

LIMITED BY R

(ON)

V_DS> I_D(ON) x R_DS(ON)MAX.

250ꢀSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

← 1mS

← 10mS

100mS

←

→

T_J= +125°C

T = -55°C

←

T_C=+25°C

T_J=+150°C

SINGLE PULSE

T_J= +25°C →

V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 4, Typical Maximum Safe Operating Area

50 100

500

_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 3, Typical Transfer Characteristics

ARF460AG/BG

1.2

1.1

1.0

0.9

0.8

0.7

V_GS=15 & 10V

→

6.5V

5.5V

4.5V

-50 -25

25 50 75 100 125 150

T_C, CASE TEMPERATURE (°C)

Figure 5, Typical Threshold Voltage vs Temperature

_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6, Typical Output Characteristics

0.60

0.50

0.40

0.30

0.20

0.10

0.9

0.7

0.5

0.3

0.1

0.05

SINGLE PULSE

10^-3

10^-5

10^-4

10^-2

RECTANGULAR PULSE DURATION (SECONDS)

10^-1

1.0

Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

RC MODEL

Junction

temp. ( ”C)

0.0284

0.165

0.307

0.00155F

0.00934F

0.128F

Power

(Watts)

Case temperature

Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL

Table 1 - Typical Class AB Large Signal Input - Output Impedance

Freq. (MHz)

Z_in(Ω)

Z_OL(Ω)

38 - j 2.6

2.0

13.5

20.9 - j 9.2

2.4 - j 6.8

.57 - j 2.6

.31 - j 0.5

.44 - j 1.9

31 - j 14

19.6 - j 17.6

12.5 - j 15.8

6.0 - j 10.5

Z_IN- Gate shunted with 25Ω

I_dq= 100mA

Z_OL- Conjugate of optimum load for 150 Watts output at V_dd=125V

ARF460AG/BG

C1 -- 2000 pF 100V NPO chip

mounted at gate lead

125V

Bias

0 - 12V

C2-C5 -- Arco 463 Mica trimmer

C6-C8 -- .1 μF 500V ceramic chip

C9 -- 2200 pF 500V chip

L1 -- 4t #20 AWG .25"ID .3 "L ~80nH

L2 -- 6t #16 AWG .312" ID .4"L ~185nH

L3 -- 15t #24 AWG .25"ID ~.85uH

L4 -- VK200-4B ferrite choke 3uH

R1-R2 -- 51 Ohm 0.5W Carbon

DUT = ARF460A/B

Input

Output

DUT

40.68 MHz Test Circuit

TO-247 Package Outline

4.69 .185

5.31 (.209)

15.49 (.610)

16.26 (.640)

1.49 (.059)

2.49 (.098)

5.38 (.212)

6.15 (.242) BSC

6.20 (.244) NOTE: These two parts comprise a symmetric pair of RF

power transistors and meet the same electrical speciﬁcations.

The device pin-outs are the mirror image of each other to

allow ease of use as a push-pull pair.

20.80 (.819)

21.46 (.845)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

Device

4.50 (.177) Max.

1.65 (.065)

0.40 (.016)

0.79 (.031)

2.13 (.084)

ARF- A

ARF- B

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

Gate ------- Drain

Source ---- Source

Drain ------- Gate

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583

ARF460BG [MICROSEMI]

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