JANTXV2N6032 [MICROSEMI]
NPN POWER SILICON TRANSISTOR; NPN功率硅晶体管
| 型号： | JANTXV2N6032 |
| 厂家： | 
Microsemi |
| 描述： | NPN POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 528
Devices
Qualified Level
JANTX
JANTXV
2N6032
2N6033
MAXIMUM RATINGS
Ratings
Symbol 2N6032 2N6033 Units
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
90
120
50
120
150
40
Vdc
Vdc
Adc
Vdc
Adc
W
VCEO
VCBO
IC
Emitter-Base Voltage
7.0
10
140
VEBO
IB
PT
Base Current
Total Power Dissipation
@ TC = +250C (1)
Operating & Storage Temperature Range
-65 to +200
0C
Top, T
stg
TO-3*
(TO-204AA)
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0C/W
Thermal Resistance, Junction-to-Case
1) Derate linearly 800 mW/0C between TC = 250C and TC = 2000C
1.25
R
qJC
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Symbol
Min.
Max.
Unit
Vdc
90
120
2N6032
2N6033
V(BR)
CEO
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
110
140
Vdc
2N6032
2N6033
V(BR)
CER
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, VEB = 1.5 Vdc
120
150
Vdc
2N6032
2N6033
V(BR)
CEX
Collector-Base Cutoff Current
VCB = 120 Vdc
VCB = 150 Vdc
Collector-Emitter Cutoff Current
VCE = 110 Vdc, VBE =-1.5 Vdc
VCE = 135 Vdc, VBE =-1.5 Vdc
6 Lake Street, Lawrence, MA 01841
25
25
mAdc
mAdc
2N6032
2N6033
ICBO
12
10
2N6032
2N6033
ICEX
120101
Page 1 of 2
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
2N6032, 2N6033, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
OFF CHARACTERISTICS (con’t)
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc
Symbol
Min.
Max.
Unit
10
10
mAdc
mAdc
IEBO
ICEO
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 50 Adc, VCE = 2.6 Vdc
IC = 40 Adc, VCE = 2.0 Vdc
Collector-Emitter Saturation Voltage
IC = 50 Adc, IB = 5.0 Adc
IC = 40 Adc, IB = 4.0 Adc
Base-Emitter Saturation Voltage
IC = 50 Adc, IB = 5.0 Adc
10
10
50
50
2N6032
2N6033
hFE
1.3
1.0
Vdc
Vdc
2N6032
2N6033
VCE(sat)
2.0
2.0
2N6032
2N6033
VBE(sat)
IC = 40 Adc, IB = 4.0 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
10
40
½hfe½
IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
1,000
pF
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
ton
ms
ms
0.5
0.5
VCC = 30 Vdc; IC = 50 Adc; IB = 5.0 Adc
VCC = 30 Vdc; IC = 40 Adc; IB = 4.0 Adc
Turn-Off Time
VCC = 30 Vdc±2; IC = 50 Adc; IB1 = 5 IB2 = -5 Adc 2N6032
VCC = 30 Vdc±2; IC = 40 Adc; IB1 = 4 IB2 = -4 Adc 2N6033
2N6032
2N6033
toff
2.0
2.0
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 2.8 Vdc, IC = 50 Adc
Test 2
VCE = 3.5 Vdc, IC = 40 Adc
Test 3
VCE = 24 Vdc, IC = 5.8 Adc
Test 4
VCE = 40 Vdc, IC = 0.9 Adc
Test 5
VCE = 90 Vdc, IC = 0.18 Adc
Test 6
VCE = 120 Vdc, IC = 0.1 Adc
2N6032
2N6033
All Types
All Types
2N6032
2N6033
(2) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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