JANTXV2N6193 [MICROSEMI]
Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN;
| 型号： | JANTXV2N6193 |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN 开关 晶体管 |
| 文件： | 总2页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
PNP MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 561
Devices
Qualified Level
JAN, JANTX
JANTXV
2N6193
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Symbol
VCEO
VCBO
VEBO
IC
2N6193
100
Units
Vdc
Vdc
Vdc
Adc
Adc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
100
6.0
5.0
Base Current
1.0
IB
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
1.0
10
W
W
0C
PT
Operating & Storage Temperature Range
-65 to +200
Top, T
TO-39*
stg
THERMAL CHARACTERISTICS
Characteristics
(TO-205AD)
Symbol
Max.
Unit
0C/W
Thermal Resistance, Junction-to-Case
17.5
R
qJC
1) Derate linearly 5.71mW/0C for TA > +250C
2) Derate linearly 57.1mW/0C for TC > +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
IC = 50 mAdc
Collector-Emitter Cutoff Current
VCE = 100 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
Collector-Emitter Cutoff Current
VCE = 90 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
VCB = 100 Vdc
100
Vdc
VCEO(sus)
ICEO
100
100
10
mAdc
mAdc
mAdc
mAdc
IEBO
ICEX
10
ICBO
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N6193 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
DC Current Gain
60
60
40
IC = 0.5 Adc, VCE = 2.0 Vdc
IC = 2.0 Adc, VCE = 2.0 Vdc
IC = 5.0 Adc, VCE = 2.0 Vdc
Collector-Emitter Saturation Voltage
IC = 2.0 Adc, IB = 0.2 Adc
IC = 5.0 Adc, IB = 0.5 Adc
Base-Emitter Saturation Voltage
IC = 2.0 Adc, IB = 0.2 Adc
IC = 5.0 Adc, IB = 0.5 Adc
hFE
240
0.7
1.2
VCE(sat)
Vdc
Vdc
1.2
1.8
VBE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
IC = 0.5 Adc, VCE = 10 Vdc, f = 10 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Output Capacitance
VBE = 2.0 Vdc, IC = 0, 100 kHz £ f £ 1.0 MHz
3.0
15
½hfe½
Cobo
300
pF
pF
1250
Cibo
SWITCHING CHARACTERISTICS
VCC = -40 Vdc, VBE(off) = 3.0 Vdc
td
tr
ts
tf
Delay Time
100
100
2.0
hs
hs
ms
hs
Rise Time
IC = 2.0 Adc, IB1= 0.2 Adc
Storage Time
VCC = -40 Vdc IC = 2.0 Adc,
Fall Time
200
IB1 = -IB2 = 0.2 Adc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t ³ 0.5 s
Test 1
VCE = 2.0 Vdc, IC = 5.0 Adc
Test 2
VCE = 90 Vdc, IC = 55 mAdc
(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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