JANTXV2N6691 [MICROSEMI]
NPN POWER SILICON TRANSISTOR; NPN功率硅晶体管
| 型号： | JANTXV2N6691 |
| 厂家： | 
Microsemi |
| 描述： | NPN POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 538
Devices
Qualified Level
JAN
2N6676
2N6678
2N6691
2N6693
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N6676 2N6678 Unit
2N6691 2N6693
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
300
450
450
400
650
650
Vdc
Vdc
Vdc
Vdc
Adc
Adc
VCEO
VCBO
VCEX
VEBO
IB
8.0
5.0
15
2N6676, 2N6678
TO-3 (TO-204AA)*
Collector Current
IC
2N6676 2N6691
2N6678 2N6693
6.0(2)
175
3.0(3)
175
W
W
Total Power Dissipation
@ TA = 250C
PT
@ TC = 250C(1)
Operating & Storage Junction Temperature Range
-65 to +200
0C
Top;
T
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0C/W
Thermal Resistance, Junction-to-Case
1.0
R
qJC
2N6691, 2N6693
TO-61*
1) Derate linearly 1.0 W/0C for TC > 250C
2) Derate linearly 34.2 mW/0C for TA > 250C
3) Derate linearly 17.1 mW/0C for TA > 250C
* See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Symbol
Min.
Max.
Unit
Vdc
300
400
2N6676, 2N6691
2N6678, 2N6693
V(BR)
CEO
Collector-Emitter Cutoff Current
VCE = 450 Vdc, VBE = 1.5 Vdc
VCE = 650 Vdc, VBE = 1.5 Vdc
0.1
0.1
mAdc
2N6676, 2N6691
2N6678, 2N6693
ICEX
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6676, 2N6678, 2N6691, 2N6693 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Emitter-Base Cutoff Current
Symbol
Min.
Max.
Unit
mAdc
IEBO
2.0
VEB = 8.0 Vdc
Collector-Base Cutoff Current
VCB = 450 Vdc
VCB = 650 Vdc
1.0
1.0
2N6676, 2N6691
2N6678, 2N6693
mAdc
ICBO
ON CHARACTERISTICS (4)
Forward-Current Transfer Ratio
IC = 1.0 Adc; VCE = 3.0 Vdc
IC = 15 Adc; VCE = 3.0 Vdc
Collector-Emitter Saturation Voltage
IC = 15 Adc; IB = 3.0 Adc
Base-Emitter Saturation Voltage
IC = 15 Adc; IB = 3.0 Adc
DYNAMIC CHARACTERISTICS
15
8.0
40
20
hFE
1.0
1.5
Vdc
Vdc
VCE(sat)
VBE(sat)
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc; VCE = 10 Vdc, f = 5 MHz
Output Capacitance
VCB = 10 Vdc; IE = 0, 100 kHz £ f £ 1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time
3.0
10
½hfe½
150
500
pF
Cobo
td
tr
0.1
0.6
2.5
0.5
0.5
ms
ms
ms
ms
ms
Rise Time
ts
tf
Storage Time
Fall Time
See Figure 3 of MIL-PRF-19500/538
tc
Cross-Over Time
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 11.7 Vdc, IC = 15 Adc
Test 2
All Types
VCE = 30 Vdc, IC = 5.9 Adc
Test 3
VCE = 100 Vdc, IC = 0.25 Adc
Test 4
2N6676, 2N6678
All Types
VCE = 25 Vdc, IC = 7.0 Adc
Test 5
2N6691, 2N6693
VCE = 300 Vdc, IC = 20 mAdc
VCE = 400 Vdc, IC = 10 mAdc
Clamped Switching
TA = 250C; VCC = 15 Vdc
IC = 15 Adc; Clamped Voltage = 350 Vdc
IC = 15 Adc; Clamped Voltage = 450 Vdc
2N6676, 2N6691
2N6678, 2N6693
2N6676, 2N6691
2N6678, 2N6693
(4) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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MICROSEMI
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