MV21006 [MICROSEMI]

GaAs Varactor Diodes Abrupt Junction; 砷化镓变容二极管突变结
MV21006
型号: MV21006
厂家: Microsemi    Microsemi
描述:

GaAs Varactor Diodes Abrupt Junction
砷化镓变容二极管突变结

二极管 变容二极管
文件: 总2页 (文件大小:149K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GaAs Varactor Diodes  
Abrupt Junction  
®
TM  
MV20001 – MV21010  
Features  
High Q Values for Higher Frequency Performance  
Constant Gamma Design  
Low Reverse Current  
Available as Chip or Packaged Diodes  
Available in Chip-on-Board Packaging  
Custom Designs Available  
Applications  
VCOs  
Phase-Locked Oscillators  
Description  
High Q Tunable Filters  
Microsemi’s GaAs abrupt junction varactors are  
fabricated from epitaxial layers grown at  
Microsemi using Chemical Vapor Deposition. The  
layers are processed using proprietary techniques  
resulting in a high Q factor and very repeatable  
tuning curves. The diodes are available in a variety  
of microwave ceramic packages or chips for  
operation from UHF to millimeter wave  
frequencies.  
Phase Shifters  
Pre-Selectors  
Maximum Ratings  
Reverse  
V
oltage  
Breakdown  
50 mA 25°C  
+20 dBm 25°C  
Voltage  
Forward Current  
Incident Power  
@
@
Operating  
T
emperature  
-55°C to +175°C  
-55°C to +200°C  
Storage emperature  
T
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com  
Specifications are subject to change. Consult factory for the latest information.  
1 The MV20000 Series of products are  
supplied with a RoHS complaint Gold finish  
.
These devices are ESD sensitive and must be handled using ESD precautions.  
Microsemi  
Copyright 2008  
Rev: 2009-05-11  
Page 1  
Microwave Products  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  
GaAs Varactor Diodes  
Abrupt Junction  
®
TM  
MV20001 – MV21010  
Specifications  
@ 25°C  
Gamma  
=
0.5  
CT  
±
@
10%  
4
V
T
yp.  
Min.  
VBR  
CT  
Part  
Number  
@
T
@
yp.  
@ 0 V  
5
Typical Characteristics  
(pF)1, 3, 4  
0.3  
0.4  
0.5  
0.6  
0.8  
1.0  
1.2  
1.5  
1.8  
2.2  
0.3  
0.4  
0.5  
0.6  
0.8  
1.0  
1.2  
1.5  
1.8  
2.2  
CT  
@
VBR  
10  
(V)  
A
Q
-4 V2  
MV20001  
MV20002  
MV20003  
MV20004  
MV20005  
MV20006  
MV20007  
MV20008  
MV20009  
MV20010  
MV21001  
MV21002  
MV21003  
MV21004  
MV21005  
MV21006  
MV21007  
MV21008  
MV21009  
MV21010  
2.4  
2.6  
2.8  
2.9  
3.0  
3.1  
3.2  
3.3  
3.4  
3.4  
2.8  
3.1  
3.4  
3.6  
3.8  
4.0  
4.2  
4.3  
4.5  
4.6  
15  
15  
15  
15  
15  
15  
15  
15  
15  
15  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
8000  
7500  
7000  
6500  
6000  
5700  
5000  
5000  
5000  
4000  
8000  
7500  
7000  
6500  
6000  
5700  
5000  
5000  
5000  
4000  
1
2
3
4
5
Capacitance is specified at 1 MHz.  
Measured by DeLoach Technique and referenced to 50 MHz.  
Tightened tolerances available upon request.  
Package capacitance of 0.15 pF is included in the above specification.  
The capacitance ratio is calculated using CP = 0.15 pF. Ratios will vary  
depending upon package selection.  
Microsemi  
Copyright 2008  
Rev: 2009-05-11  
Page 2  
Microwave Products  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  

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