M63814P [MITSUBISHI]
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE; 带钳位二极管7 -UNIT 300毫安晶体管阵列
| 型号： | M63814P |
| 厂家： | 
Mitsubishi Group |
| 描述： | 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| 文件： | 总5页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
PIN CONFIGURATION
M63814P/FP/GP/KP are seven-circuit Single transistor ar-
rays with clamping diodes. The circuits are made of NPN
transistors. Both the semiconductor integrated circuits per-
form high-current driving with extremely low input-current
supply.
→
→
→
→
→
→
→
IN1
16
15
14
13
12
11
10
9
1
2
3
4
O1
O2
O3
O4
IN2
INz3
→
OUTPUT
IN4
IN5
IN6
IN7
INPUT
→
→
→
→O5
5
6
7
8
→
O6
→
O7
GND
→
COM COMMOM
FEATURES
●
Four package configurations (P, FP, GP and KP)
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
● Medium breakdown voltage (BVCEO ≥ 35V)
●
Synchronizing current (IC(max) = 300mA)
Package type
●
With clamping diodes
●
Low output saturation voltage
●
Wide operating temperature range (Ta = –40 to +85°C)
CIRCUIT DIAGRAM
COM
OUTPUT
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
INPUT
10.5k
10k
GND
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
FUNCTION
Unit: Ω
The M63814P/FP/GP/KP each have seven circuits consist-
ing of NPN transistor. A spike-killer clamping diode is pro-
vided between each output pin (collector) and COM pin
(pin9). The transistor emitters are all connected to the GND
pin (pin 8). The transistors allow synchronous flow of 300mA
collector current. A maximum of 35V voltage can be applied
between the collector and emitter.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Parameter
Collector-emitter voltage
Collector current
Conditions
Ratings
–0.5 ~ +35
300
Unit
V
VCEO
IC
Output, H
Current per circuit output, L
mA
V
VI
–0.5 ~ +35
300
Input voltage
mA
V
IF
Clamping diode forward current
Clamping diode reverse voltage
VR
35
1.47
M63814P
Ta = 25°C, when mounted M63814FP
1.00
Pd
Power dissipation
W
0.80
on board
M63814GP
M63814KP
0.78
Topr
Tstg
Operating temperature
Storage temperature
–40 ~ +85
–55 ~ +125
°C
°C
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Limits
typ
—
Symbol
VO
Parameter
Output voltage
Test conditions
Unit
V
min
0
max
35
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
0
—
250
160
250
130
250
120
250
120
30
M63814P
0
—
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
0
—
M63814FP
M63814GP
M63814KP
0
—
IC
mA
V
0
—
0
—
0
—
0
—
0
—
VIN
Input voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol Parameter Test conditions
Limits
typ
—
Unit
V
min
35
—
max
—
V
(BR) CEO Collector-emitter breakdown voltage ICEO = 10µA
IIN = 1mA, IC = 10mA
—
0.2
0.8
15.0
2.0
10
VCE(sat)
Collector-emitter saturation voltage
V
IIN = 2mA, IC = 150mA
IIN = 1mA, IC = 10mA
IF = 250mA
—
—
VIN(on)
VF
“On” input voltage
7.5
—
11.0
1.2
—
V
V
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
IR
µA
—
VR = 35V
—
hFE
VCE = 10V, IC = 10mA
50
—
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol Parameter Test conditions
Limits
typ
Unit
min
—
max
—
ton
toff
Turn-on time
Turn-off time
120
240
ns
ns
CL = 15pF (note 1)
—
—
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
Vo
50%
50%
INPUT
Measured device
R
L
L
OPEN
OUTPUT
PG
OUTPUT
50%
ton
50%
C
50Ω
toff
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 11V
(2)Input-output conditions : R
(3)Electrostatic capacity C includes floating capacitance at
connections and input capacitance at probes
L = 220Ω, Vo = 35V
L
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Input Characteristics
4
Thermal Derating Factor Characteristics
2.0
1.5
1.0
0.5
0
Ta = –40°C
M63814P
3
Ta = 25°C
M63814FP
2
M63814GP
M63814KP
0.744
0.520
Ta = 85°C
1
0.418
0.406
0
0
25
50
75 85 100
0
5
10
15
20
(V)
25
30
Ambient temperature Ta (°C)
Input voltage V
I
Duty Cycle-Collector Characteristics
(M63814P)
Duty Cycle-Collector Characteristics
(M63814P)
400
300
400
300
200
100
0
1~4
1~2
5
6
7
3
4
200
100
0
5
6
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
0
100
20
40
60
80
100
20
40
60
80
0
Duty cycle (%)
Duty cycle (%)
Duty Cycle-Collector Characteristics
(M63814FP)
Duty Cycle-Collector Characteristics
(M63814FP)
400
400
300
200
100
0
300
200
1~3
1
2
3
4
5
6
7
4
5
6
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
100
0
0
100
20
40
60
80
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63814GP/KP)
Duty Cycle-Collector Characteristics
(M63814GP/KP)
400
300
200
100
0
400
1~2
300
200
1
2
3
4
5
6
7
3
4
5
7
6
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
100
0
0
100
0
20
40
60
80
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Output Saturation Voltage
Output Saturation Voltage
Collector Current Characteristics
Collector Current Characteristics
250
200
150
100
80
Ta = 25°C
Ta = 25°C
= 3mA
V
I
= 28V
IB
= 2mA
= 1.5mA
V
I = 24V
I
B
I
B
V
I
= 20V
V
I = 16V
IB = 1mA
60
V
I
= 12V
= 8V
V
I
40
20
100
50
IB = 0.5mA
0
0
0
0.2
0.4
0.6
0.8
0
0.05
0.10
0.15
0.20
Output saturation voltage VCE(sat) (V)
Output saturation voltage VCE(sat) (V)
Output Saturation Voltage
DC Amplification Factor
Collector Current Characteristics
Collector Current Characteristics
103
100
V
CE 10V
Ta = 25°C
I
I
= 2mA
7
5
80
Ta = –40°C
Ta = 25°C
Ta = 85°C
3
2
60
40
20
102
7
5
3
2
101
0
1
2
3
100
10
10
2
3
5 7
2
3
5 7
2
3
5 7
10
0
0.05
0.10
0.15
0.20
Output saturation voltage VCE(sat) (V)
Collector current Ic (mA)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Grounded Emitter Transfer Characteristics
Grounded Emitter Transfer Characteristics
250
50
40
30
20
10
0
V
CE = 4V
VCE = 4V
Ta = 85°C
200
150
Ta = 85°C
Ta = –40°C
Ta = 25°C
100
50
Ta = –40°C
Ta = 25°C
0
0
0
1.0
2.0
3.0
4.0
5.0
4
8
12
16
20
Input voltage V
I
(V)
Input voltage VI (V)
Clamping Diode Characteristics
250
200
150
Ta = 85°C
100
50
0
Ta = 25°C
Ta = –40°C
0
0.4
0.8
1.2
1.6
2.0
Forward bias voltage VF (V)
Jan. 2000
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