MGF0918A_11 [MITSUBISHI]
High-power GaAs FET (small signal gain stage); 高功率GaAs FET(小信号增益级)型号: | MGF0918A_11 |
厂家: | Mitsubishi Group |
描述: | High-power GaAs FET (small signal gain stage) |
文件: | 总4页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
< High-power GaAs FET (small signal gain stage) >
MGF0918A
L & S BAND / 0.5W
SMD non - matched
DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
High power gain
Gp=20dB(TYP.) @f=1.9GHz
High power added efficiency
add=45%(TYP.) @f=1.9GHz,Pin=8dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
Fig.1
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=150mA Rg=1k
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
Unit
Gate to source
breakdown voltage
VGSO
-15
-15
V
V
VGDO Gate to drain breakdown voltage
ID
Drain current
400
mA
mA
mA
W
IGR
IGF
PT
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
-1.2
5.0
3
Tch
Tstg
175
C
C
-65 to +175
Electrical characteristics
(Ta=25C)
Symbol
Parameter
Test conditions
Limits
Unit
mA
Min.
-
Typ.
300
Max.
400
Saturated drain current
VDS=3V,VGS=0V
IDSS
Gate to source cut-off voltage
Transconductance
VDS=3V,ID=1.0mA
-1.0
-
-5.0
V
mS
dBm
%
VGS(off)
gm
VDS=3V,ID=150mA
-
25
-
130
27
35
20
1.0
35
-
-
Po
Output power
VDS=10V,ID=150mA,f=1.9GHz
Pin=8dBm
add
GLP
NF
Power added Efficiency
Linear Power Gain
Noise figure
-
VDS=10V,ID=150mA,f=1.9GHz
18
-
-
dB
-
dB
Rth(ch-c) Thermal Resistance *1
Vf Method
-
50
C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0918A
L & S BAND / 0.5W
SMD non - matched
MGF0918A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
Vds=10V
Id(off)=150mA
f=1.9GHz
Po
PAE
Gp
0
-10
-5
0
5
10
15
Pin(dBm)
P i(S C L) v s .P o(S C L),IM 3
30
25
20
15
10
5
30
V D =10 V
20
ID =1 50 m A
f1=1 .9 0G H z
f2=1 .9 1G H z
P o
10
0
-10
-20
-30
-40
-50
-60
-70
IM 3
0
-5
-10
-15
-20
-20
-15
-10
-5
0
5
10
15
P in(S C L)(dB m )
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF0918A
L & S BAND / 0.5W
SMD non - matched
MGF0918A S PARAMETERS (Ta=25C,VD=10V,ID=150mA, Reference Plane see Fig.1)
freq.
(MHz)
600
S11
S21
S12
S22
K
MAG/MSG
(dB)
(mag)
0.966
0.939
0.919
0.905
0.897
0.892
0.890
0.889
0.888
0.886
0.883
0.877
0.868
0.856
0.840
0.820
0.797
0.771
0.743
0.713
0.674
0.618
0.545
0.485
0.475
0.535
0.640
0.730
0.813
0.876
(ang)
-47.70
-72.11
-90.91
(mag)
6.220
5.269
4.470
3.805
3.257
2.811
2.453
2.168
1.946
1.775
1.647
1.553
1.489
1.448
1.427
1.423
1.433
1.457
1.491
1.536
1.587
1.643
1.699
1.748
1.782
1.788
1.753
1.656
1.473
1.176
(ang)
142.02
120.98
103.95
89.91
78.05
67.78
58.64
50.31
42.56
35.21
28.16
21.31
14.56
7.83
(mag)
0.015
0.021
0.024
0.026
0.026
0.025
0.024
0.024
0.023
0.023
0.022
0.023
0.024
0.025
0.027
0.029
0.031
0.035
0.038
0.042
0.047
0.053
0.058
0.064
0.071
0.077
0.082
0.086
0.088
0.087
(ang)
56.75
41.10
27.49
15.71
5.60
(mag)
0.302
0.360
0.426
0.492
0.553
0.606
0.651
0.687
0.716
0.738
0.754
0.768
0.779
0.788
0.797
0.806
0.814
0.820
0.824
0.824
0.818
0.806
0.786
0.759
0.723
0.678
0.636
0.609
0.607
0.636
(ang)
-56.49
-78.28
-94.16
0.21
0.29
0.36
0.42
0.49
0.60
0.70
0.76
0.86
0.93
1.07
1.10
1.15
1.20
1.20
1.18
1.21
1.12
1.12
1.13
1.19
1.27
1.40
1.47
1.45
1.38
1.22
1.15
1.14
1.19
26.18
24.00
22.70
21.65
20.98
20.51
20.09
19.56
19.27
18.87
17.15
16.35
15.58
14.90
14.51
14.33
13.88
14.06
13.86
13.40
12.62
11.77
10.90
10.32
10.00
10.00
10.44
10.47
9.96
1000
1400
1800
2200
2600
3000
3400
3800
4200
4600
5000
5400
5800
6200
6600
7000
7400
7800
8200
8600
9000
9400
9800
10200
10600
11000
11400
11800
12200
-105.49
-116.96
-126.16
-133.71
-140.07
-145.57
-150.45
-154.92
-159.19
-163.52
-168.29
-173.99
177.60
172.89
162.95
154.14
146.69
137.66
123.53
102.00
73.05
-105.68
-114.07
-120.27
-125.02
-128.82
-132.05
-134.94
-137.64
-140.24
-142.75
-145.19
-147.53
-149.77
-151.90
-153.92
-155.84
-157.68
-159.47
-161.21
-162.88
-164.44
-165.75
-166.62
-166.73
-165.59
-162.55
-156.74
-3.00
-10.20
-16.12
-20.89
-24.64
-27.52
-29.72
-31.42
-32.85
-34.23
-35.84
-37.92
-40.74
-44.55
-49.58
-56.03
-64.03
-73.66
-84.89
-97.58
1.01
-6.02
-13.41
-21.33
-29.97
-39.52
-50.18
-62.15
-75.56
-90.54
39.23
5.13
-23.88
-43.68
-54.21
-63.08
-107.10
-125.18
-144.56
-164.88
177.63
160.67
-111.47
-126.11
-140.87
-154.90
-167.09
8.65
2.0
0.8
Gate Mark
Round corner
0.80
Gate Mark
(1)
(1)
Reference Plane
(3)
Reference Plane
(2) 0.6
(2)
0.25
4.00
2.5
BACK SIDE PATTERN
(1) Gate
(2) Drain
(3) Source
(Unit:mm)
Fig.1 OUTLINE DRAWING
Publication Date : Apr., 2011
3
< High-power GaAs FET (small signal gain stage) >
MGF0918A
L & S BAND / 0.5W
SMD non - matched
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Publication Date : Apr., 2011
4
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