MGF0920A [MITSUBISHI]
L & S BAND GaAs FET [ SMD non - matched ]; L& S波段砷化镓场效应管[ SMD非 - 匹配]型号: | MGF0920A |
厂家: | Mitsubishi Group |
描述: | L & S BAND GaAs FET [ SMD non - matched ] |
文件: | 总4页 (文件大小:48K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0920A
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0920A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
· High output power
Po=32dBm(TYP.) @f=1.9GHz,Pin=15dBm
· High power gain
Gp=18dB(TYP.) @f=1.9GHz
· High power added efficiency
hadd=45%(TYP.) @f=1.9GHz,Pin=15dBm
· Hermetic Package
APPLICATION
· For UHF Band power amplifiers
Fig.1
QUALITY
· GG
RECOMMENDED BIAS CONDITIONS
· Vds=10V · Ids=400mA · Rg=200W
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25°C)
Symbol
VGSO
Parameter
Ratings
-15
Unit
V
Gate to source
breakdown voltage
VGDO Gate to drain breakdown voltage
-15
V
ID
Drain current
1500
-3.6
mA
mA
mA
W
IGR
IGF
PT
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
15
8.3
Tch
Tstg
175
°C
°C
-65 to +175
Electrical characteristics
(Ta=25°C)
Symbol
Parameter
Test conditions
Limits
Typ.
1000
-
Unit
Min.
Max.
Saturated drain current
Gate to source cut-off voltage
Transconductance
VDS=3V,VGS=0V
-
-1.0
-
1500
mA
V
IDSS
VDS=3V,ID=3.0mA
VDS=3V,ID=400mA
VDS=10V,ID=400mA,f=1.9GHz
Pin=15dBm
-5.0
VGS(off)
gm
370
32
-
-
mS
dBm
%
Po
Output power
30
-
hadd
GLP
Power added Efficiency
Linear Power Gain
35
-
VDS=10V,ID=400mA,f=1.9GHz
DVf Method
16
-
18
-
dB
Rth(ch-c) Thermal Resistance *1
*1:Channel to case /
13
18
°C/W
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
June/2004
MGF0920A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pi
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
Vds=10V
Id(off)=400mA
f=1.9GHz
Po
PAE
Gp
0
-10
-5
0
5
10
15
20
Pin(dBm)
Pi(SCL) vs.Po(SCL),IM3
40
30
VD=10V
ID=400mA
f1=1.90GHz
f2=1.91GHz
35
30
25
20
15
10
5
20
10
Po
0
-10
-20
-30
-40
-50
-60
-70
IM3
0
-5
-10
-15
-10
-5
0
5
10
15
20
Pin(SCL)(dBm)
Mitsubishi Electric
June/2004
MGF0920A S PARAMETERS
°
(Ta=25 C,VD=10V,ID=400mA, Reference Plane see Fig.1)
freq.
(MHz)
S11
S21
S12
S22
K
MAG/MSG
(dB)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
600
1000
1400
1800
2200
2600
3000
3400
3800
4200
4600
5000
5400
5800
6200
6600
7000
7400
7800
8200
8600
9000
9400
9800
10200
10600
11000
11400
11800
12200
0.930
0.912
0.903
0.899
0.899
0.900
0.901
0.901
0.900
0.897
0.893
0.887
0.880
0.871
0.861
0.849
0.836
0.822
0.805
0.785
0.761
0.730
0.690
0.638
0.588
0.547
0.534
0.562
0.641
0.770
-96.03
7.784
5.692
4.233
3.242
2.584
2.156
1.879
1.696
1.565
1.462
1.370
1.283
1.199
1.121
1.054
1.003
0.971
0.963
0.978
1.016
1.071
1.139
1.212
1.282
1.344
1.393
1.431
1.464
1.509
1.597
119.71
100.24
85.39
73.85
64.56
56.76
49.88
43.51
37.40
31.40
25.42
19.44
13.46
7.49
0.019
0.023
0.024
0.024
0.022
0.021
0.020
0.019
0.019
0.020
0.021
0.023
0.025
0.028
0.031
0.034
0.039
0.044
0.050
0.058
0.067
0.078
0.093
0.110
0.131
0.156
0.186
0.221
0.260
0.305
39.54
26.68
17.80
12.03
8.64
7.04
6.70
7.24
8.31
0.367
0.427
0.476
0.516
0.552
0.583
0.612
0.638
0.662
0.684
0.703
0.718
0.730
0.738
0.742
0.744
0.743
0.739
0.734
0.728
0.720
0.712
0.703
0.690
0.671
0.644
0.601
0.537
0.440
0.300
-155.36
-155.22
-154.99
-154.82
-154.81
-155.02
-155.50
-156.24
-157.24
-158.46
-159.84
-161.35
-162.91
-164.48
-166.00
-167.44
-168.79
-170.03
-171.21
-172.37
-173.62
-175.10
-176.99
-179.52
176.62
0.25
0.32
0.42
0.54
0.75
0.91
1.06
1.20
1.24
1.20
1.19
1.15
1.15
1.14
1.18
1.24
1.20
1.16
1.10
0.99
0.90
0.82
0.75
0.74
0.73
0.72
0.70
0.66
0.61
0.58
26.12
23.94
22.46
21.31
20.70
20.11
18.23
16.82
16.23
15.95
15.54
15.13
14.48
13.73
12.76
11.78
11.27
10.94
10.98
12.43
12.04
11.64
11.15
10.66
10.11
9.51
-124.52
-140.36
-149.63
-155.96
-161.19
-165.84
-169.78
-172.74
-174.91
-177.52
178.90
176.64
172.31
167.25
162.24
157.65
153.50
149.52
145.30
140.29
133.94
125.77
115.44
102.87
88.25
9.66
11.07
12.38
13.47
14.22
14.56
14.40
13.69
12.36
10.31
7.49
1.52
-4.44
-10.45
-16.57
-22.92
-29.63
-36.87
-44.85
-53.74
-63.76
-75.07
-87.81
-102.03
-117.69
-134.63
-152.53
3.78
-0.92
-6.73
-13.79
-22.25
-32.28
-44.04
-57.73
-73.53
-91.61
172.09
167.44
162.49
158.74
72.23
55.90
40.93
29.66
8.86
8.21
7.64
7.19
165.54
2.0
0.8
Gate Mark
Round corner
0.80
Gate Mark
(1)
(1)
Reference Plane
Reference Plane
(3)
(2) 0.6
(2)
0.25
4.00
2.5
BACK SIDE PATTERN
(1) Gate
(2) Drain
(3) Source
(Unit:mm)
Fig.1 OUTLINE DRAWING
Mitsubishi Electric
June/2004
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0920A
L & S BAND GaAs FET [ SMD non – matched ]
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts,
however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other
problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy
design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our
products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the
highest levels of safety in the products when in use by customers.
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Mitsubishi Electric
June/2004
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