MGF4318D-01 [MITSUBISHI]

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET;
MGF4318D-01
元器件型号: MGF4318D-01
生产厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用:

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

放大器 晶体管
PDF文件: 总5页 (文件大小:298K)
下载文档:  下载PDF数据表文档文件
型号参数:MGF4318D-01参数

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MGF4319F-01

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MGF4319G

Super Low Noise InGaAs HEMT

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MGF4319G

Super Low Noise InGaAs HEMT

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MGF431XG

Super Low Noise InGaAs HEMT

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MGF431XG

Super Low Noise InGaAs HEMT

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7 MITSUBISHI

MGF4416D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-9, 4 PIN

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0 MITSUBISHI

MGF4417D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-9, 4 PIN

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0 MITSUBISHI

MGF4418D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-9, 4 PIN

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0 MITSUBISHI

MGF4511C-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

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0 MITSUBISHI

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MGF4714AP

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0 MITSUBISHI