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元器件品牌
MGF4953B_11
[MITSUBISHI]
Low Noise GaAs HEMT; 低噪声的GaAs HEMT
元器件型号：
MGF4953B_11
生产厂家：
MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：
Low Noise GaAs HEMT
低噪声的GaAs HEMT
PDF文件：
总6页 (文件大小：159K)
下载文档：
下载PDF数据表文档文件
型号参数：MGF4953B_11参数
查看货源
MGF4953B-01
RF Small Signal Field-Effect Transistor, N-Channel
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156
-
0
MITSUBISHI
MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
Warning
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on line
156
-
80
MITSUBISHI
MGF4955A
RF Small Signal Field-Effect Transistor, N-Channel
Warning
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on line
156
-
0
MITSUBISHI
MGF4957A
RF Small Signal Field-Effect Transistor, N-Channel
Warning
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on line
156
-
0
MITSUBISHI
MGF4961B
SUPER LOW NOISE InGaAs HEMT
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on line
156
-
138
MITSUBISHI
MGF4963BL
Low Noise GaAs HEMT
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156
-
101
MITSUBISHI
MGF4964BL
Low Noise GaAs HEMT
Warning
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on line
156
-
134
MITSUBISHI
MGF65A3H
Trench Field Stop IGBTs with Fast Recovery Diode
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on line
156
-
0
SANKEN
MGF65A4H
Trench Field Stop IGBTs with Fast Recovery Diode
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on line
156
-
2
SANKEN
MGF65A6L
VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode
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156
-
0
SANKEN
MGF-7002A
RF/Microwave Amplifier, GAAS
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on line
156
-
0
MITSUBISHI
MGF7004
Transistor
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on line
156
-
0
MITSUBISHI
MGF7006
Wide Band Low Power Amplifier, 200MHz Min, 1800MHz Max,
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on line
156
-
0
MITSUBISHI
MGF7006-01
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
Warning
: Undefined variable $rtag in
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on line
156
-
0
MITSUBISHI
MGF7051A
SPDT, 800MHz Min, 2000MHz Max, 1.5dB Insertion Loss-Max
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on line
156
-
0
MITSUBISHI
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