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元器件品牌
MGFC42V7785A_04
[MITSUBISHI]
7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET; 7.7 〜 8.5GHz波段16W内部匹配的GaAs FET
元器件型号：
MGFC42V7785A_04
生产厂家：
MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：
7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
7.7 〜 8.5GHz波段16W内部匹配的GaAs FET
PDF文件：
总2页 (文件大小：210K)
下载文档：
下载PDF数据表文档文件
型号参数：MGFC42V7785A_04参数
查看货源
MGFC4414D-02
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
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156
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MITSUBISHI
MGFC4414D-02
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MITSUBISHI
MGFC4418D-02
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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1
MITSUBISHI
MGFC4418D-03
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
MITSUBISHI
MGFC4418D-03
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MITSUBISHI
MGFC4418E-03
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MITSUBISHI
MGFC4418E-03
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MITSUBISHI
MGFC4419G
InGaAs HEMT Chip
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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29
MITSUBISHI
MGFC4419G
InGaAs HEMT Chip
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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31
MITSUBISHI
MGFC4419G-A03
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MITSUBISHI
MGFC4419G-A11
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MITSUBISHI
MGFC4419G-A12
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MITSUBISHI
MGFC4419G-A13
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MITSUBISHI
MGFC4424D-03
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MITSUBISHI
MGFC4427D-03
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
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