MGFC42V7785A [MITSUBISHI]

7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET; 7.7- 8.5GHz波段16W内部匹配的GaAs FET
MGFC42V7785A
元器件型号: MGFC42V7785A
生产厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用:

7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
7.7- 8.5GHz波段16W内部匹配的GaAs FET

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PDF文件: 总2页 (文件大小:104K)
下载文档:  下载PDF数据表文档文件
型号参数:MGFC42V7785A参数

MGFC42V7785A_04

7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET

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13 MITSUBISHI

MGFC4414D-02

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI

MGFC4414D-02

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI

MGFC4418D-02

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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1 MITSUBISHI

MGFC4418D-03

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI

MGFC4418D-03

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI

MGFC4418E-03

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI

MGFC4418E-03

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI

MGFC4419G

InGaAs HEMT Chip

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29 MITSUBISHI

MGFC4419G

InGaAs HEMT Chip

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31 MITSUBISHI

MGFC4419G-A03

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4419G-A11

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4419G-A12

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4419G-A13

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4424D-03

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI