MGFK35V2732-51 [MITSUBISHI]
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET;
| 型号： | MGFK35V2732-51 |
| 厂家： | 
Mitsubishi Group |
| 描述： | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET |
| 文件： | 总4页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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