MGFK35V4045_11 [MITSUBISHI]
X/Ku band internally matched power GaAs FET; X / Ku波段内部匹配功率GaAs FET
| 型号： | MGFK35V4045_11 |
| 厂家： | 
Mitsubishi Group |
| 描述： | X/Ku band internally matched power GaAs FET |
| 文件： | 总4页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
< X/Ku band internally matched power GaAs FET >
MGFK35V4045
14.0 – 14.5 GHz BAND / 3.5W
DESCRIPTION
The MGFK35V4045 is an internally impedance-matched
GaAs power FET especially designed for use in 14.0 – 14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system
Flip-chip mounted
High output power
P1dB=3.5W (TYP.) @f=14.0 – 14.5GHz
High linear power gain
GLP=6.4dB (TYP.) @f=14.0 – 14.5GHz
High power added efficiency
P.A.E.=20% (TYP.) @f=14.0 – 14.5GHz
APPLICATION
14.0 – 14.5 GHz band power amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=1.2A Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
Symbol
Parameter
Ratings
Unit
V
Gate to drain
VGDO
breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
V
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
ID
Drain current
3500
-9
mA
mA
mA
W
IGR
IGF
PT *1
Tch
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
17
33.3
175
C
Tstg
*1 : Tc=25C
-65 to +175
C
Electrical characteristics
(Ta=25C)
Symbol
Parameter
Test conditions
Limits
Typ.
2700
1000
-
Unit
Min.
2000
700
-2
Max.
Saturated drain current
Transconductance
VDS=3V,VGS=0V
3500
mA
mS
V
IDSS
VDS=3V,ID=1200mA
VDS=3V,ID=10mA
-
-5
-
gm
Gate to source cut-off voltage
VGS(off)
P1dB
GLP
Output power at 1dB gain compression VDS=10V,ID(RF off)=1200mA
34.5
5.5
-
35.4
6.4
dBm
dB
f=14.0 – 14.5GHz
delta Vf method
Linear Power Gain
Power added efficiency
Thermal resistance
-
PAE
20
-
%
Rth(ch-c) *2
-
-
4.5
C/W
*2 : Channel-case
Publication Date : Apr., 2011
1
< X/Ku band internally matched power GaAs FET >
MGFK35V4045
14.0 – 14.5 GHz BAND / 3.5W
MGFK35V4045 TYPICAL CHARACTERISTICS
Publication Date : Apr., 2011
2
< X/Ku band internally matched power GaAs FET >
MGFK35V4045
14.0 – 14.5 GHz BAND / 3.5W
MGFK35V4045 S-parameters( Ta=25deg.C , VDS=10(V),IDS=1200(mA) )
S Parameters(Typ.)
f
S11
S21
S12
S22
(GHz)
Magn.
0.391
0.224
0.091
0.052
0.052
0.337
Angle(deg.)
-164
-173
176
Magn.
2.089
2.163
2.188
2.163
2.113
1.995
Angle(deg.)
-58
Magn.
0.137
0.139
0.141
0.143
0.140
0.127
Angle(deg.)
-94
Magn.
0.324
0.322
0.331
0.342
0.362
0.397
Angle(deg.)
14.0
14.1
14.2
14.3
14.4
14.5
139
117
98
-70
-105
-82
-118
-3
-93
-130
78
-22
-105
-117
-141
62
-32
-152
47
Publication Date : Apr., 2011
3
< X/Ku band internally matched power GaAs FET >
MGFK35V4045
14.0 – 14.5 GHz BAND / 3.5W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
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circuit application examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and
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is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
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The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
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Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
4
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