MSN0880K-TO220 [MORESEMI]
75V(D-S) N-Channel Enhancement Mode Power MOS FET;
| 型号： | MSN0880K-TO220 |
| 厂家： | 
MORE Semiconductor |
| 描述： | 75V(D-S) N-Channel Enhancement Mode Power MOS FET |
| 文件： | 总6页 (文件大小：612K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSN0880K
75V(D-S) N-Channel
Enhancement Mode Power MOS FET
Features
● VDS=75V；ID=80A@ VGS=10V；
RDS(ON)<8mΩ @ VGS=10V
● Special process technology for high ESD capability
● Special designed for convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
Lead Free
● Excellent package for good heat dissipation
Application
●
●
●
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
PIN Configuration
Schematic diagram
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
MSN0880K
TO-220-3L
-
-
-
MSN0880K
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Value
75
Unit
Drain-Source Voltage (VGS=0V）
VDS
VGS
V
V
Gate-Source Voltage (VDS=0V)
±25
80
Drain Current (DC) at Tc=25℃
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
A
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
60
A
320
30
A
Peak diode recovery voltage
V/ns
W
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition : Tj=25℃,VDD=50V,VG=10V,L=0.3mH ,ID=62A;
170
1.13
580
W/℃
mJ
℃
EAS
TJ,TSTG
-55 To 175
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MSN0880K
Table 2. Thermal Characteristic
Parameter
Symbol
RthJC
Value
0.88
63
Unit
℃/W
℃/W
Thermal Resistance，Junction-to-Case（Maximum）
Thermal Resistance，Junction-to-Ambient （Maximum）
RthJA
Table 3. Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V ID=250μA
VDS=75V,VGS=0V
VDS=75V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=40A
75
84
V
μA
μA
nA
V
1
10
±100
4
IDSS
IGSS
VGS(th)
RDS(ON)
2
2.85
6.5
Drain-Source On-State Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
8
mΩ
gFS
Clss
Coss
Crss
Qg
VDS=10V,ID=40A
20
-
-
S
4400
340
260
100
20
PF
PF
PF
nC
nC
nC
V
DS=25V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS=30V,ID=30A,
Gate-Source Charge
Qgs
Qgd
VGS=10V
Gate-Drain Charge
30
Switching times
Turn-on Delay Time
td(on)
tr
td(off)
tf
17.8
11.8
56
nS
nS
nS
nS
Turn-on Rise Time
V
DD=30V,ID=2A,RL=15Ω
GS=10V,RG=2.5Ω
V
Turn-Off Delay Time
Turn-Off Fall Time
14.6
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward on voltage(Note 1)
Reverse Recovery Time(Note 1)
Reverse Recovery Charge(Note 1)
Forward Turn-on Time
ISD
ISDM
VSD
trr
80
320
1.2
36
A
A
Tj=25℃,ISD=40A,VGS=0V
V
nS
nC
Tj=25℃,IF=75A,di/dt=100A/μs
Qrr
ton
56
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting Tj=25℃
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MSN0880K
Test Circuit
1) EAS Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
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MSN0880K
Typical Electrical and Thermal Characteristics (curves)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
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MSN0880K
Figure7. BVDSS vs Junction Temperature
Figure8. VGS(th) vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
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MSN0880K
TO-220-3L Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.9500
12.650
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
12.950
Min.
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
0.498
Max.
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
0.510
A
A1
b
b1
c
c1
D
E
E1
e
2.540 TYP.
0.100 TYP.
e1
F
4.980
2.650
7.900
0.000
12.900
2.850
5.180
2.950
8.100
0.300
13.400
3.250
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
H
h
L
L1
V
7.500 REF.
0.295 REF.
Φ
3.400
3.800
0.134
0.150
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