PUMA84S32000LI-015 [MOSAIC]

SRAM Module, 1MX32, 15ns, CMOS, PLASTIC, LCC-84;
PUMA84S32000LI-015
型号: PUMA84S32000LI-015
厂家: MOSAIC    MOSAIC
描述:

SRAM Module, 1MX32, 15ns, CMOS, PLASTIC, LCC-84

静态存储器 内存集成电路
文件: 总7页 (文件大小:169K)
中文:  中文翻译
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1M x 32 SRAM MODULE  
PUMA 84S32000 - 012/015/020  
11403 West Bernado Court, Suite 100, San Diego, CA 92127.  
Tel No: (619) 674 2233, Fax No: (619) 674 2230  
Issue 1.2 : January 1999  
Description  
Features  
Very fast access times of 12/15/20 ns .  
JEDEC 84 'J' leaded plastic Surface Mount  
Package.  
The PUMA 84S32000 is a 32Mbit CMOS High Speed  
Static RAM organised as 1M x 32 in a JEDEC 84 pin  
surface mount J-leaded PLCC, available with access  
times of 12, 15, and 20ns. The output width is user  
configurable as 8, 16 or 32 bits using eight Chip Selects  
(CS1~8).  
Single 5V±10% Power supply.  
User Configurable as 8 / 16 / 32 bit wide output.  
The device features low power standby, multiple ground  
pins for maximum noise immunity and TTL compatible  
inputs and outputs. The PUMA 84S32000 offers a  
dramatic space saving advantage over eight standard  
512Kx8 devices.  
Operating Power  
(32-BIT) 5.28 W (max)  
Low Power Standby CMOS  
Fully Static operation.  
550 mW (max)  
Multiple ground pins for maximum noise immunity.  
Block Diagram  
Pin Definition  
A0 - A18  
WE  
OE  
11 10  
9
8
7
6
5
4
3
2
1 84 83 82 81 80 79 78 77 76 75  
NC  
NC  
D14  
D13  
D12  
GND  
D11  
D10  
D9  
NC  
NC  
D17  
D18  
D19  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
74  
512K x 8  
SRAM  
512K x 8  
SRAM  
D0 - D7  
D0 - D7  
CS5  
73  
72  
71  
70  
69  
68  
67  
66  
65  
64  
63  
62  
61  
60  
59  
58  
57  
56  
55  
54  
CS1  
GND  
D20  
D21  
D22  
D23  
VCC  
D24  
D25  
D26  
D27  
GND  
D28  
D29  
D30  
NC  
512K x 8  
SRAM  
512K x 8  
SRAM  
D8 - D15  
CS6  
D8 - D15  
PUMA 84S32000  
CS2  
CS3  
D8  
VCC  
D7  
VIEW  
FROM  
ABOVE  
512K x 8  
SRAM  
512K x 8  
SRAM  
D16 - D23  
CS7  
D16 - D23  
D6  
D5  
D4  
GND  
D3  
D2  
512K x 8  
SRAM  
512K x 8  
SRAM  
D24 - D31  
CS8  
D24 - D31  
D1  
NC  
NC  
CS4  
NC  
33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53  
Pin Functions  
Address Inputs  
Data Input/Output  
Chip Select  
A0 ~ A18  
D0 ~ D31  
CS1 ~ 8  
WE  
Package Details  
Plastic 84 J-Leaded JEDEC PLCC  
Write Enable  
Output Enable  
No Connect  
OE  
NC  
Power (+5V)  
Ground  
VCC  
GND  
ISSUE 1.2 : January 1999  
PUMA 84S32000 - 012/015/020  
DC OPERATING CONDITIONS  
Absolute Maximum Ratings (1)  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Voltage on any pin relative to VSS  
Power Dissipation  
VT(2)  
PT  
-0.5  
-
-
-
-
7.0  
5.0  
150  
V
W
oC  
Storage Temperature  
TSTG  
-65  
Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only  
and functional operation of the device at those or any other conditions above those indicated in the  
operational sections of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device reliability.  
(2) VT can be -2.0V pulse of less than 8ns.  
Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Supply Voltage  
VCC  
VIH  
VIL  
TA  
4.5  
2.2  
-0.3  
0
5.0  
5.5  
VCC+0.5  
0.8  
V
Input High Voltage  
Input Low Voltage  
Operating Temperature (Commercial)  
(Industrial)  
-
-
-
-
V
V
oC  
70  
TAI  
-40  
85  
oC (Suffix I)  
DC Electrical Characteristics  
(VCC=5V±10%, -40 to 85 C)  
Symbol Test Condition  
Parameter  
Min Typ max Unit  
I/P Leakage Current  
Address,OE,WE ILI  
0V < VIN < VCC  
-20  
-20  
-
-
20  
20  
µA  
µA  
Output Leakage Current  
ILO  
CS = VIH, VI/O = GND to VCC  
Operating Supply Current 32-bitmode ICC32 Min. Cycle, CS = VIL, f=fMAX, IOUT = 0mA  
16-bitmode ICC16 As Above.  
-
-
-
-
-
-
960 mA  
640 mA  
480 mA  
8-bitmode ICC8 As Above.  
Standby Supply Current  
Output Voltage  
TTLlevels ISB1  
CS = VIH, f=fMAX  
-
-
-
-
-
-
320 mA  
100 mA  
CMOSlevels ISB2  
CS > VCC-0.2V, 0.2<VIN<VCC-0.2V, f=0  
VOL IOL = 8.0mA  
VOH IOH = -4.0mA  
0.4  
-
V
V
2.4  
-
Notes :  
1/ Typical values are at VCC=5.0V,TA=25oC and specified loading.  
2/ CS above refers to CS1~4 / CS5~8 for 32 bit mode  
3/ At f=fMAX address and data inputs are cycling at maximum frequency.  
2
PUMA 84S32000 - 012/015/020  
ISSUE 1.2 : January 1999  
Capacitance (VCC=5V±10%,TA=25oC)  
Note: Capacitance calculated, not measured.  
Parameter  
Symbol Test Condition  
max  
Unit  
Input Capacitance  
I/P Capacitance  
I/O Capacitance  
(Address,OE,WE)  
(Other)  
CIN1  
CIN2  
CI/O  
VIN = 0V  
VIN = 0V  
VI/O = 0V  
70  
12  
62  
pF  
pF  
pF  
Worst case (8-bit)  
AC Test Conditions  
Output Load  
I/O Pin  
166Ω  
* Input pulse levels: 0V to 3.0V  
* Input rise and fall times: 3ns  
1.76V  
* Input and Output timing reference levels: 1.5V  
* Output load: see diagram  
30pF  
* VCC=5V±10%  
Operation Truth Table  
CS  
H
L
OE  
X
WE  
X
DATA PINS  
High Impedance  
Data Out  
SUPPLY CURRENT  
ISB1 , ISB2 , ISB3  
MODE  
Standby  
Read  
L
H
ICC32 , ICC16 , ICC8  
ICC32 , ICC16 , ICC8  
ICC32 , ICC16 , ICC8  
ISB1 , ISB2 , ISB3  
L
H
L
L
Data In  
Write  
L
L
Data In  
Write  
L
H
H
High-Impedance  
High-Z  
Notes : H = VIH : L =VIL : X = VIH or VIL  
The above table reflects the operation of each of the RAM's on the module. Care should be taken to avoid  
bus contention on data lines using chip select signals.  
3
ISSUE 1.2 : January 1999  
PUMA 84S32000 - 012/015/020  
AC OPERATING CONDITIONS  
Read Cycle  
012  
015  
020  
Parameter  
Symbol min max min max min max  
Unit  
Read Cycle Time  
tRC  
12  
-
-
12  
12  
6
15  
-
-
15  
15  
7
20  
-
-
20  
20  
9
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
tAA  
Chip Select Access Time  
tACS  
tOE  
-
-
-
Output Enable to Output Valid  
Output Hold from Address Change  
Chip Selection to Output in Low Z  
Output Enable to Output in Low Z  
Chip Deselection to O/P in High Z  
Output Disable to Output in High Z  
-
-
-
tOH  
3
3
0
0
0
-
3
3
0
0
0
-
3
3
0
0
0
-
tCLZ  
tOLZ  
tCHZ  
tOHZ  
-
-
-
-
-
-
6
7
9
6
7
9
Write Cycle  
012  
015  
020  
Parameter  
Symbol min max min max min max  
Unit  
Write Cycle Time  
tWC  
tCW  
tAW  
tAS  
12  
10  
10  
0
-
-
-
-
-
-
6
-
-
-
15  
12  
12  
0
-
-
-
-
-
-
7
-
-
-
20  
15  
15  
0
-
-
-
-
-
-
9
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Selection to End of Write  
Address Valid to End of Write  
Address Setup Time  
Write Pulse Width  
tWP  
tWR  
tWHZ  
tDW  
tDH  
10  
0
12  
0
12  
0
Write Recovery Time  
Write to Output in High Z  
Data to Write Time Overlap  
Data Hold from Write Time  
Output active from end of write  
0
0
0
6
7
9
0
0
0
tOW  
3
3
3
4
PUMA 84S32000 - 012/015/020  
ISSUE 1.2 : January 1999  
Read Cycle Timing Waveform (1,2)  
t RC  
Address  
OE  
tAA  
tOE  
tOLZ  
tOH  
CS  
Don't  
care.  
tACS  
tOHZ (3)  
tCLZ (4,5)  
Dout  
Data Valid  
tCHZ (3,4,5)  
AC Read Characteristics Notes  
(1) WE is High for Read Cycle.  
(2) All read cycle timing is referenced from the last valid address to the first transition address.  
(3) tCHZ and tOHZ are defined as the time at which the outputs achieve open circuit conditions and are  
not referenced to output voltage levels.  
(4) At any given temperature and voltage condition, tCHZ (max) is less than tCLZ (min) both for a given module  
and from module to module.  
(5) These parameters are sampled and not 100% tested.  
Write Cycle No.1 Timing Waveform(1,4)  
tWC  
Address  
tWR(7)  
tAS(6)  
OE  
tAW  
tCW  
CS  
Don't  
Care  
WE  
t OHZ(3,9)  
tOW  
tWP(2)  
(8)  
High-Z  
Dout  
Din  
tDW  
Data Valid  
tDH  
High-Z  
5
ISSUE 1.2 : January 1999  
PUMA 84S32000 - 012/015/020  
Write Cycle No.2 Timing Waveform (1,5)  
tWC  
Address  
tAS(6)  
tWR(7)  
tCW  
CS  
tAW  
tWP(2)  
WE  
tOH  
Don't  
Care  
tWHZ(3,9)  
tOW  
(4)  
(8)  
High-Z  
Dout  
tDH  
tDW  
High-Z  
Din  
Data Valid  
AC Write Characteristics Notes  
(1) All write cycle timing is referenced from the last valid address to the first transition address.  
(2) All writes occur during the overlap of CS and WE low.  
(3) If OE, CS, and WE are in the Read mode during this period, the I/O pins are low impedance state.  
Inputs of opposite phase to the output must not be applied because bus contention can occur.  
(4) Dout is the Read data of the new address.  
(5) OE is continuously low.  
(6) Address is valid prior to or coincident with CS and WE low, too avoid inadvertant writes.  
(7) CS or WE must be high during address transitions.  
(8) When CS are low : I/O pins are in the output state. Input signals of opposite phase leading to the  
output should not be applied.  
(9) Defined as the time at which the outputs achieve open circuit conditions and are not referenced to  
output voltage levels. These parameters are sampled and not 100% tested.  
6
PUMA 84S32000 - 012/015/020  
ISSUE 1.2 : January 1999  
Package Information  
Dimensions in mm(inches)  
Plastic 84 Pin JEDEC Surface mount PLCC  
0.10 (0.004)  
30.35 (1.195) sq.  
30.10 (1.185) sq.  
8.50  
(0.335) max  
1.27  
(0.050) typ.  
0.46  
(0.018) typ.  
0.90 (0.035) typ.  
Ordering Information  
PUMA 84S32000LI - 012  
Speed  
012  
015  
020  
=
=
=
12 ns  
15 ns  
20 ns  
Temperature Range  
Power Consumption  
Blank  
I
=
=
Commercial Temperature  
Industrial Temperature  
Blank  
L
=
=
Standard  
Low Power  
Organisation  
32000  
=
1M x 32 SRAM  
configurable as 2M x 16  
and 4M x 8  
Memory Type  
Package  
S
=
=
Asynchronous SRAM  
5V + 10% VCC  
PUMA 84  
Memory Stack 84 pin 'J'  
Leaded  
Note :  
Although this data is believed to be accurate the information contained herein is not intended to and does not create  
any warranty of merchantibility or fitness for a particular purpose.  
Our products are subject to a constant process of development. Data may be changed at any time without notice.  
Products are not authorised for use as critical components in life support devices without the express written approval  
of a company director.  

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