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BU406WD [MOTOROLA]

7A, 200V, NPN, Si, POWER TRANSISTOR, TO-220AB;
BU406WD
型号： BU406WD
厂家： MOTOROLA    MOTOROLA
描述：

7A, 200V, NPN, Si, POWER TRANSISTOR, TO-220AB

晶体 晶体管
文件： 总4页 (文件大小：103K)
中文：  中文翻译
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by BU406/D  
SEMICONDUCTOR TECHNICAL DATA  
These devices are high voltage, high speed transistors for horizontal deflection  
output stages of TV’s and CRT’s.  
7 AMPERES  
NPN SILICON  
POWER TRANSISTORS  
60 WATTS  
•
•
•
•
High Voltage: V  
= 330 or 400 V  
Fast Switching Speed: t = 750 ns (max)  
CEV  
f
Low Saturation Voltage: V = 1 V (max) @ 5 A  
Packaged in Compact JEDEC TO–220AB  
CE(sat)  
150 and 200 VOLTS  
MAXIMUM RATINGS  
Rating  
Symbol  
BU406  
200  
BU407  
150  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter Base Voltage  
V
CEO  
V
400  
330  
CEV  
CBO  
EBO  
V
V
400  
330  
6
Collector Current — Continuous  
Peak Repetitive  
Peak (10 ms)  
I
C
7
10  
15  
Base Current  
I
B
4
Adc  
Total Device Dissipation, T = 25 C  
Derate above T = 25 C  
C
P
D
60  
0.48  
Watts  
W/ C  
C
Operating and Storage  
Junction Temperature Range  
T , T  
J stg  
–65 to 150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.08  
70  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
R
θJC  
θJA  
CASE 221A–06  
TO–220AB  
Lead Temperature for Soldering Purposes:  
1/8″ from Case for 5 Seconds  
T
L
275  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
Collector–Emitter Sustaining Voltage  
(I = 100 mAdc, I = 0)  
BU406  
BU407  
V
200  
150  
—
—
—
—
Vdc  
CEO(sus)  
C
B
Collector Cutoff Current  
I
mAdc  
CES  
(V  
CE  
(V  
CE  
(V  
CE  
= Rated V  
= Rated V  
= Rated V  
, V  
= 0)  
+ 50 Vdc, V  
+ 50 Vdc, V  
—
—
—
—
—
—
5
0.1  
1
CEV BE  
= 0)  
CEO  
CEO  
BE  
BE  
= 0, T = 150 C)  
C
Emitter Cutoff Current  
(V = 6 Vdc, I = 0)  
BU406, BU407  
I
—
—
1
mAdc  
EBO  
EB  
ON CHARACTERISTICS (1)  
Collector–Emitter Saturation Voltage (I = 5 Adc, I = 0.5 Adc)  
C
V
—
—
—
—
—
—
1
1.2  
2
Vdc  
Vdc  
C
B
CE(sat)  
V
BE(sat)  
Base–Emitter Saturation Voltage (I = 5 Adc, I = 0.5 Adc)  
C
B
Forward Diode Voltage (I  
EC  
= 5 Adc) “D” only  
V
Volts  
EC  
(1) Pulse Test: Pulse Width  
300 µs, Duty Cycle  
1%.  
(continued)  
REV 2  
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS — continued (T = 25 C unless otherwise noted)  
C
Characteristic  
DYNAMIC CHARACTERISTICS  
Current–Gain — Bandwidth Product  
Symbol  
Min  
Typ  
Max  
Unit  
f
T
10  
—
—
—
—
MHz  
pF  
(I = 0.5 Adc, V  
= 10 Vdc, f  
CE test  
= 20 MHz)  
C
Output Capacitance  
(V = 10 Vdc, I = 0, f = 1 MHz)  
C
80  
ob  
CB  
E
SWITCHING CHARACTERISTICS  
Inductive Load Crossover Time  
t
c
—
—
0.75  
µs  
(V  
CC  
= 40 Vdc, I = 5 Adc,  
C
I
= I = 0.5 Adc, L = 150 µH)  
B1 B2  
100  
70  
10  
T
= 100°C  
J
dc  
25°C  
50  
BONDING WIRE LIMIT  
THERMAL LIMIT  
SECOND BREAKDOWN LIMIT  
1
V
= 5 V  
30  
20  
CE  
0.1  
BU407  
BU406  
T
5
= 25  
°C  
C
10  
0.1  
0.2 0.3 0.5  
0.7  
1
2
3
5
7
10  
2
3
7
10  
20  
30  
50 70 100  
200  
I
, COLLECTOR CURRENT (AMPS)  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
C
CE  
Figure 1. DC Current Gain  
Figure 2. Maximum Rated Forward  
Bias Safe Operating Area  
2
Motorola Bipolar Power Transistor Device Data  
PACKAGE DIMENSIONS  
NOTES:  
SEATING  
PLANE  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
–T–  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION Z DEFINES A ZONE WHERE ALL  
BODY AND LEAD IRREGULARITIES ARE  
ALLOWED.  
C
S
B
F
T
4
INCHES  
MIN  
MILLIMETERS  
DIM  
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX  
0.620  
0.405  
0.190  
0.035  
0.147  
0.105  
0.155  
0.025  
0.562  
0.060  
0.210  
0.120  
0.110  
0.055  
0.255  
0.050  
–––  
MIN  
14.48  
9.66  
4.07  
0.64  
3.61  
2.42  
2.80  
0.46  
12.70  
1.15  
4.83  
2.54  
2.04  
1.15  
5.97  
0.00  
1.15  
–––  
MAX  
15.75  
10.28  
4.82  
0.88  
3.73  
2.66  
3.93  
0.64  
14.27  
1.52  
5.33  
3.04  
2.79  
1.39  
6.47  
1.27  
–––  
A
K
Q
Z
0.570  
0.380  
0.160  
0.025  
0.142  
0.095  
0.110  
0.018  
0.500  
0.045  
0.190  
0.100  
0.080  
0.045  
0.235  
0.000  
0.045  
–––  
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080  
2.04  
STYLE 1:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
CASE 221A–06  
TO–220AB  
ISSUE Y  
3
Motorola Bipolar Power Transistor Device Data  
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,  
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
How to reach us:  
USA / EUROPE: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,  
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447  
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315  
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609  
INTERNET: http://Design–NET.com  
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
BU406/D  
◊

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