MRF6414 [MOTOROLA]

RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅
MRF6414
型号: MRF6414
厂家: MOTOROLA    MOTOROLA
描述:

RF POWER TRANSISTOR NPN SILICON
RF功率晶体管NPN硅

晶体 射频双极晶体管 CD 放大器 局域网
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by MRF6414/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
The MRF6414 is designed for 26 volt UHF large signal, common emitter,  
class AB linear amplifier applications.  
50 W, 960 MHz  
Specified 26 Volt, 960 MHz Characteristics  
Output Power = 50 Watts  
RF POWER TRANSISTOR  
NPN SILICON  
Minimum Gain = 8.5 dB @ 960 MHz, Class AB  
Minimum Efficiency = 50% @ 960 MHz, 50 Watts  
Silicon Nitride Passivated  
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal  
Migration  
Circuit Board Photomaster Available by Ordering Document  
MRF6414PHT/D from Motorola Literature Distribution.  
CASE 333A02, STYLE 2  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
28  
65  
4
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
Vdc  
Vdc  
Adc  
Emitter–Base Voltage  
Collector–Current — Continuous  
I
C
6
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
134  
0.77  
Watts  
W/°C  
C
Storage Temperature Range  
THERMAL CHARACTERISTICS  
T
stg  
65 to +150  
°C  
Characteristic  
Thermal Resistance, Junction to Case  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
Symbol  
Max  
Unit  
R
1.3  
°C/W  
θJC  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (I = 20 mAdc, I = 0)  
V
V
V
28  
65  
4
10  
Vdc  
Vdc  
C
B
(BR)CEO  
(BR)CBO  
(BR)EBO  
Collector–Base Breakdown Voltage (I = 20 mAdc, I = 0)  
C
E
Emitter–Base Breakdown Voltage (I = 10 mAdc, I = 0)  
Vdc  
E
C
Collector–Emitter Leakage Current (V  
= 30 Vdc, R  
= 75 )  
I
CER  
mAdc  
CE  
BE  
ON CHARACTERISTICS  
DC Current Gain (I  
CE  
= 1 Adc, V  
CE  
= 5 Vdc)  
h
FE  
30  
120  
Motorola, Inc. 1995  
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)  
C
Characteristic  
DYNAMIC CHARACTERISTICS  
Output Capacitance  
(V = 26 Vdc, I = 0, f = 1 MHz) (1)  
Symbol  
Min  
Typ  
Max  
Unit  
C
45  
pF  
ob  
CB  
E
FUNCTIONAL TESTS  
Common–Emitter Amplifier Power Gain  
G
8.5  
50  
dB  
%
pe  
(V  
CC  
= 26 Vdc, P  
= 50 W, I  
= 50 W, I  
= 50 W, I  
= 200 mA, f = 960 MHz)  
= 200 mA, f = 960 MHz)  
= 200 mA, f = 960 MHz)  
out  
CQ  
CQ  
CQ  
Collector Efficiency  
(V = 26 Vdc, P  
η
55  
CC  
out  
Output Mismatch Stress  
(V = 26 Vdc, P  
Ψ
No Degradation in Output Power  
CC out  
VSWR = 3:1; all phase angles at frequency of test  
(1) For information only. It is not measurable in MRF6414 because of internal matching network.  
C9  
+V  
T2  
CC  
R1  
C8  
P1  
C5  
C4  
D1  
C6  
C7  
D2  
R2  
RF OUTPUT  
RF INPUT  
C3  
T1  
50  
C1  
C2  
50  
C1, C3  
C2, C7  
C5, C8  
C6  
C9  
D1, D2  
100 pF, Chip Capacitor, Hight Q  
330 pF, Chip Capacitor, 0805  
10 nF, Chip Capacitor, 0805  
15 F, Capacitor, 63 V  
100 F, Capacitor, 16 V  
Diode 1N4007  
P1  
R1  
R2  
T1  
T2  
1 k, Trimmer  
1 kΩ, Resistor  
58 Ω, Resistor, 0805  
MRF6414  
Transistor NPN Type BD135  
Figure 1. 960 MHz Test Circuit Schematic  
MRF6414  
2
MOTOROLA RF DEVICE DATA  
TYPICAL CHARACTERISTICS  
70  
60  
70  
60  
P
= 5 W  
in  
50  
40  
50  
40  
30  
20  
30  
V
= 26 V  
= 200 mA  
CC  
20  
10  
0
I
Q
V
= 26 V  
CC  
= 200 mA  
f = 960 MHz  
10  
0
I
Q
0
2
4
6
8
10  
900  
920  
940  
960  
980  
P
, INPUT POWER (WATTS)  
f, FREQUENCY (MHz)  
in  
Figure 2. Output Power versus Input Power (Typical)  
Figure 3. Output Power versus Frequency  
12  
10  
9
70  
60  
50  
G
pe  
65  
60  
55  
50  
45  
P
= 5 W  
η
in  
8
3 W  
40  
1.6  
1.4  
1.2  
7
6
30  
20  
VSWR  
I
= 200 mA  
f = 960 MHz  
Q
5
40  
35  
4
920  
930  
940  
950  
960  
970  
18  
20  
30  
22  
24  
26  
28  
32  
Vdc, SUPPLY VOLTAGE (VOLTS)  
f, FREQUENCY (MHz)  
Figure 4. Output Power versus Supply Voltage  
Figure 5. Typical Broadband Amplifier  
MOTOROLA RF DEVICE DATA  
MRF6414  
3
C9  
C6  
MRF6414  
C4  
C5  
C8  
C7  
FB  
C1  
C2  
C3  
OUTPUT  
INPUT  
Figure 6. 960 MHz Test Circuit Components Layout  
Normalized to 10  
f
Z
Z
*
in  
OL  
MHz  
Ohms  
Ohms  
900  
935  
4.4 + j4.6  
5.1 + j4.8  
5.4 + j3.6  
4.7 + j2.5  
4.7 + j4.7  
4.0 + j3.9  
3.7 + j4.5  
3.4 + j4.7  
Z*  
load  
960  
980  
Z
in  
Z
OL  
*: Conjugate of optimum load impedance into  
which the device operates at a given output  
power, voltage, current and frequency.  
Figure 7. Input and Output Impedances with Circuit Tuned for Maximum Gain  
@ V = 26 V, I = 200 mA, P = 50 W  
CC  
Q
out  
MRF6414  
4
MOTOROLA RF DEVICE DATA  
PACKAGE DIMENSIONS  
L
N
IDENTIFICATION  
NOTCH  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
4
5
6
INCHES  
MIN  
MILLIMETERS  
DIM  
A
B
C
D
E
F
H
J
MAX  
0.985  
0.410  
0.290  
0.090  
0.115  
0.130  
0.175  
0.006  
0.116  
MIN  
24.52  
9.91  
6.35  
1.91  
2.42  
2.80  
3.94  
0.11  
2.29  
MAX  
25.01  
10.41  
7.36  
2.28  
2.92  
3.30  
4.44  
0.15  
2.94  
–B–  
0.965  
0.390  
0.250  
0.075  
0.095  
0.110  
0.155  
0.004  
0.090  
1
2
3
Q 2 PL  
K 2 PL  
D 4 PL  
F 2 PL  
M
M
M
0.13 (0.005)  
T
A
B
K
L
0.725 BSC  
18.41 BSC  
N
Q
0.415  
0.120  
0.435  
0.135  
10.55  
3.05  
11.04  
3.42  
J
STYLE 2:  
PIN 1. EMITTER  
2. BASE  
3. EMITTER  
4. EMITTER  
5. COLLECTOR  
6. EMITTER  
C
H
E
–T–  
–A–  
SEATING  
PLANE  
CASE 333A–02  
ISSUE C  
MOTOROLA RF DEVICE DATA  
MRF6414  
5
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,  
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
How to reach us:  
USA / EUROPE: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,  
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447  
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315  
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609  
INTERNET: http://Design–NET.com  
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
MRF6414/D  

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