MX29F800TTI-90 [Macronix]
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY; 8M - BIT [ 1Mx8 / 512Kx16 ] CMOS FLASH MEMORY
| 型号： | MX29F800TTI-90 |
| 厂家： | 
MACRONIX INTERNATIONAL |
| 描述： | 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY |
| 文件： | 总42页 (文件大小：693K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
MX29F800T/B
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
FEATURES
• 1,048,576 x 8/524,288 x 16 switchable
• Single power supply operation
eraseoperationcompletion.
• Ready/Busy pin (RY/BY)
- 5.0V only operation for read, erase and program
operation
- Provides a hardware method of detecting program
oreraseoperationcompletion.
• Fast access time: 70/90/120ns
• Sectorprotection
• Low power consumption
- Sector protect/chip unprotect for 5V/12V system.
- Hardware method to disable any combination of
sectors from program or erase operations
- Tempory sector unprotect allows code changes in
previously locked sectors.
- 50mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- Byte/word Programming (7us/12us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Auto Erase (chip & sector) and Auto Program
-Automaticallyeraseanycombinationofsectorswith
Erase Suspend capability.
• 100,000minimumerase/programcycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Code Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
- Automatically program and verify data at specified
address
• Low VCC write inhibit is equal to or less than 3.2V
• Package type:
• Erase suspend/Erase Resume
- 44-pin SOP
- Suspends sector erase operation to read data from,
or program data to, another sector that is not being
erased, then resumes the erase.
- 48-pin TSOP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• Status Reply
-Datapolling&Togglebitfordetectionofprogramand
GENERAL DESCRIPTION
The MX29F800T/B is a 8-mega bit Flash memory or-
ganized as 1M bytes of 8 bits or 512K words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29F800T/B is packaged in 44-pin SOP, 48-pin
TSOP. It is designed to be reprogrammed and erased
in system or in standard EPROM programmers.
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29F800T/B uses a 5.0V±10% VCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The standard MX29F800T/B offers access time as fast
as 70ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29F800T/B has separate chip enable (CE) and
output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F800T/B uses a command register to manage this
functionality. The command register allows for 100%
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
1
MX29F800T/B
PIN CONFIGURATIONS
PIN DESCRIPTION
SYMBOL PIN NAME
A0~A18 Address Input
Q0~Q14 Data Input/Output
44 SOP(500 mil)
RESET
WE
A8
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RY/BY
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A18
A17
A7
A6
A5
A4
A3
A2
A1
Q15/A-1
CE
Q15(Word mode)/LSB addr(Byte mode)
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
GND
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
Chip Enable Input
WE
Write Enable Input
Word/Byte Selction input
Hardware Reset Pin/Sector Protect
Unlock
BYTE
RESET
A0
CE
GND
OE
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
OE
Output Enable Input
Ready/Busy Output
Power Supply Pin (+5V)
Ground Pin
RY/BY
VCC
GND
48 TSOP (Standard Type) (12mm x 20mm)
1
2
3
4
5
6
7
8
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
GND
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
Q11
Q3
Q10
Q2
Q9
Q1
Q8
Q0
OE
GND
CE
A0
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
WE
RESET
NC
MX29F800T/B
NC
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
P/N:PM0578
REV. 1.7, JUL. 24, 2001
2
MX29F800T/B
BLOCK STRUCTURE
MX29F800T TOP BOOT SECTOR ADDRESS TABLE
Sector Size
(Kbytes/
Address Range (in hexadecimal)
(x16)
(x8)
Sector A18 A17 A16 A15 A14 A13 A12
Kwords)
Address Range
Address Range
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
1
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
32/16
8/4
00000h-07FFFh
08000h-0FFFFh
10000h-17FFFh
18000h-1FFFFh
20000h-27FFFh
28000h-2FFFFh
30000h-37FFFh
38000h-3FFFFh
40000h-47FFFh
48000h-4FFFFh
50000h-57FFFh
58000h-5FFFFh
60000h-67FFFh
68000h-6FFFFh
70000h-77FFFh
78000h-7BFFFh
7C000h-7CFFFh
7D000h-7DFFFh
7E000h-7FFFFh
00000h-0FFFFh
10000h-1FFFFh
20000h-2FFFFh
30000h-3FFFFh
40000h-4FFFFh
50000h-5FFFFh
60000h-6FFFFh
70000h-7FFFFh
80000h-8FFFFh
90000h-9FFFFh
A0000h-AFFFFh
B0000h-BFFFFh
C0000h-CFFFFh
D0000h-DFFFFh
E0000h-EFFFFh
F0000h-F7FFFh
F8000h-F9FFFh
FA000h-FBFFFh
FC000h-FFFFFh
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
1
1
1
0
1
1
X
8/4
16/8
MX29F800B BOTTOM BOOT SECTOR ADDRESS TABLE
Sector Size
(Kbytes/
Address Range (in hexadecimal)
(x16)
(x8)
Sector A18 A17 A16 A15 A14 A13 A12
Kwords)
Address Range
Address Range
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0
0
1
0
1
1
X
0
1
16/8
8/4
8/4
00000h-01FFFh
02000h-02FFFh
03000h-03FFFh
04000h-07FFFh
08000h-0FFFFh
10000h-17FFFh
18000h-1FFFFh
20000h-27FFFh
28000h-2FFFFh
30000h-37FFFh
38000h-3FFFFh
40000h-47FFFh
48000h-4FFFFh
50000h-57FFFh
58000h-5FFFFh
60000h-67FFFh
68000h-6FFFFh
70000h-77FFFh
78000h-7FFFFh
00000h-03FFFh
04000h-05FFFh
06000h-07FFFh
08000h-0FFFFh
10000h-1FFFFh
20000h-2FFFFh
30000h-3FFFFh
40000h-4FFFFh
50000h-5FFFFh
60000h-6FFFFh
70000h-7FFFFh
80000h-8FFFFh
90000h-9FFFFh
A0000h-AFFFFh
B0000h-BFFFFh
C0000h-CFFFFh
D0000h-DFFFFh
E0000h-EFFFFh
F0000h-FFFFFh
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
32/16
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
Note: Address range is A18:A-1 in byte mode and A18:A0 in word mode.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
3
MX29F800T/B
BLOCK DIAGRAM
WRITE
STATE
CONTROL
INPUT
PROGRAM/ERASE
HIGH VOLTAGE
CE
OE
WE
MACHINE
(WSM)
LOGIC
STATE
MX29F800T/B
REGISTER
ADDRESS
LATCH
FLASH
ARRAY
ARRAY
SOURCE
HV
A0-A18
AND
COMMAND
DATA
DECODER
BUFFER
Y-PASS GATE
PGM
DATA
HV
SENSE
AMPLIFIER
COMMAND
DATA LATCH
PROGRAM
DATA LATCH
I/O BUFFER
Q0-Q15/A-1
P/N:PM0578
REV. 1.7, JUL. 24, 2001
4
MX29F800T/B
AUTOMATIC PROGRAMMING
AUTOMATIC ERASE ALGORITHM
The MX29F800T/B is byte programmable using the Au-
tomatic Programming algorithm. The Automatic Pro-
gramming algorithm makes the external system do not
need to have time out sequence nor to verify the data
programmed. The typical chip programming time at
room temperature of the MX29F800T/B is less than 8
seconds.
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stan-
dard microprocessor write timings. The device will au-
tomatically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecu-
tive read cycles provides feedback to the user as to the
status of the programming operation.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished
in less than 8 second. The Automatic Erase algorithm
automatically programs the entire array prior to electri-
cal erase. The timing and verification of electrical erase
are controlled internally within the device.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming cir-
cuitry. During write cycles, the command register inter-
nally latches address and data needed for the program-
ming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE or CE, whichever hap-
pens first.
AUTOMATIC SECTOR ERASE
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reli-
ability, and cost effectiveness.The MX29F800T/B elec-
trically erases all bits simultaneously using Fowler-
Nordheim tunneling. The bytes are programmed by us-
ing the EPROM programming mechanism of hot elec-
tron injection.
The MX29F800T/B is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. Sector erase modes al-
low sectors of the array to be erased in one erase cycle.
The Automatic Sector Erase algorithm automatically
programs the specified sector(s) prior to electrical erase.
The timing and verification of electrical erase are con-
trolled internally within the device.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command.After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the
user to only write program set-up commands (including
2 unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the pro-
gram verification, and counts the number of sequences.
A status bit similar to DATA polling and a status bit tog-
gling between consecutive read cycles, provide feed-
back to the user as to the status of the programming
operation.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
5
MX29F800T/B
TABLE1. SOFTWARE COMMAND DEFINITIONS
First Bus
Bus Cycle
Second Bus Third Bus
Cycle Cycle
Fourth Bus
Cycle
Fifth Bus
Cycle
Sixth Bus
Cycle
Command
Cycle Addr Data Addr Data Addr
Data Addr Data Addr
Data Addr Data
Reset
1
1
4
4
4
XXXH F0H
RA RD
Read
Read Silicon ID Word
555H AAH 2AAH 55H 555H 90H ADI
AAAH AAH 555H 55H AAAH 90H ADI
DDI
DDI
Byte
Sector Protect Word
Verify
555H AAH 2AAH 55H 555H 90H (SA) XX00H
x02H XX01H
Byte
4
AAAH AAH 555H 55H AAAH 90H (SA) 00H
x04H 01H
Porgram
Word
Byte
Word
Byte
Word
Byte
4
4
6
6
6
6
1
1
555H AAH 2AAH 55H 555H A0H PA
AAAH AAH 555H 55H AAAH A0H PA
PD
PD
Chip Erase
Sector Erase
555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H
AAAH AAH 555H 55H AAAH 80H AAAH AAH 555H 55H
555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H
AAAH AAH 555H 55H AAAH 80H AAAH AAH 555H 55H
XXXH B0H
555H 10H
AAAH 10H
SA
SA
30H
30H
Sector Erase Suspend
Sector Erase Resume
XXXH 30H
Note:
1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacture code,A1=0, A0 = 1 for device code. A2-A18=do not care.
(Refer to table 3)
DDI = Data of Device identifier : C2H for manufacture code, D6H/58H (x8) and 22D6H/2258H (x16) for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2.PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address to the sector to be erased.
3.The system should generate the following address patterns: 555H or 2AAH to Address A10~A0 in word mode/AAAH or 555H
to Address A10~A-1 in byte mode.
Address bit A11~A18=X=Don't care for all address commands except for Program Address (PA) and Sector
Address (SA). Write Sequence may be initiated with A11~A18 in either state.
4. For Sector Protect Verify operation:If read out data is 01H, it means the sector has been protected. If read out data is 00H,
it means the sector is still not being protected.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
6
MX29F800T/B
COMMAND DEFINITIONS
sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while
the Sector Erase operation is in progress. Either of the
two reset command sequences will reset the
device(when applicable).
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writing them
in the improper sequence will reset the device to the
read mode. Table 1 defines the valid register command
TABLE 2. MX29F800T/B BUS OPERATION
Pins
CE
OE
WE
H
A0
L
A1
L
A6
X
A9
Q0 ~ Q15
Mode
Read Silicon ID
L
L
VID(2)
VID(2)
C2H (Byte mode)
Manfacturer Code(1)
Read Silicon ID
Device Code(1)
Read
00C2H (Word mode)
L
L
H
H
L
X
D6H/58H (Byte mode)
22D6H/2258H (Word mode)
L
H
L
L
L
L
L
X
L
H
X
H
L
A0
X
A1
X
A6
X
A9
DOUT
Standby
X
X
HIGH Z
HIGH Z
DIN(3)
X
Output Disable
Write
H
X
X
X
X
H
A0
X
A1
X
A6
L
A9
Sector Protect(6)
Chip Unprotect
Verify Sector Protect(6)
Reset
VID(2)
VID(2)
L
L
VID(2)
VID(2)
VID(2)
X
L
X
X
H
X
H
X
X
H
X
Code(5)
HIGH Z
X
X
X
X
NOTES:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 1.
2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V.
3. Refer to Table 1 for valid Data-In during a write operation.
4. X can be VIL or VIH.
5. Code=00H/0000H means unprotected.
Code=01H/0001H means protected.
6. A18~A12=Sector address for sector protect.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
7
MX29F800T/B
SET-UP AUTOMATIC CHIP/SECTOR ERASE
COMMANDS
READ/RESET COMMAND
The read or reset operation is initiated by writing the
read/reset command sequence into the command reg-
ister. Microprocessor read cycles retrieve array data.
The device remains enabled for reads until the com-
mand register contents are altered.
Chip erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
"set-up" command 80H. Two more "unlock" write cy-
cles are then followed by the chip erase command 10H.
If program-fail or erase-fail happen, the write of F0H will
reset the device to abort the operation. A valid com-
mand must then be written to place the device in the
desired state.
The Automatic Chip Erase does not require the device
to be entirely pre-programmed prior to executing the
Automatic Chip Erase. Upon executing the Automatic
Chip Erase, the device will automatically program and
verify the entire memory for an all-zero data pattern.
When the device is automatically verified to contain an
all-zero pattern, a self-timed chip erase and verify be-
gin. The erase and verify operations are completed when
the data on Q7 is "1" at which time the device returns to
the Read mode. The system is not required to provide
any control or timing during these operations.
SILICON-ID-READ COMMAND
Flash memories are intended for use in applications
where the local CPU alters memory contents. As such,
manufacturer and device codes must be accessible while
the device resides in the target system. PROM pro-
grammers typically access signature codes by raising
A9 to a high voltage(VID). However, multiplexing high
voltage onto address lines is not generally desired sys-
tem design practice.
When using the Automatic Chip Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory
array(no erase verification command is required).
The MX29F800T/B contains a Silicon-ID-Read opera-
tion to supplement traditional PROM programming meth-
odology. The operation is initiated by writing the read
silicon ID command sequence into the command reg-
ister. Following the command write, a read cycle with
A1=VIL, A0=VIL retrieves the manufacturer code of C2H/
00C2H. A read cycle with A1=VIL, A0=VIH returns the
device code of D6H/22D6H for MX29F800T, 58H/2258H
for MX29F800B.
If the Erase operation was unsuccessful, the data on
Q5 is "1"(see Table 4), indicating the erase operation
exceed internal timing limit.
The automatic erase begins on the rising edge of the
last WE or CE, whichever happens first pulse in the
command sequence and terminates when the data on
Q7 is "1" and the data on Q6 stops toggling for two con-
secutive read cycles, at which time the device returns
to the Read mode.
TABLE 3. EXPANDED SILICON ID CODE
Pins
Manufacture code Word VIL VIL 00H
Byte VIL VIL
Word VIH VIL 22H
Byte VIH VIL
Word VIH VIL 22H
Byte VIH VIL
A0
A1 Q15~Q8 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Code(Hex)
1
1
1
1
0
0
0
0
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
0
0
1
1
0
0
0
0
1
1
0
0
0
0
1
1
1
1
0
0
0
0
0
0
0
0
0
0
1
0
00C2H
X
C2H
Device code
22D6H
for MX29F800T
Device code
X
D6H
2258H
for MX29F800B
Sector Protection
Verification
X
58H
X
X
VIH X
VIH X
01H (Protected)
00H (Unprotected)
P/N:PM0578
REV. 1.7, JUL. 24, 2001
8
MX29F800T/B
SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the de-
vice to be entirely pre-programmed prior to executing
the Automatic Set-up Sector Erase command and Au-
tomatic Sector Erase command. Upon executing the
Automatic Sector Erase command, the device will auto-
matically program and verify the sector(s) memory for
an all-zero data pattern. The system is not required to
provide any control or timing during these operations.
(no erase verification command is required). Sector
erase is a six-bus cycle operation. There are two "un-
lock" write cycles. These are followed by writing the
set-up command 80H. Two more "unlock" write cycles
are then followed by the sector erase command 30H.
The sector address is latched on the falling edge of WE
or CE, whichever happens later, while the command(data)
is latched on the rising edge of WE or CE, whichever
happens first. Sector addresses selected are loaded
into internal register on the sixth falling edge of WE or
CE, whichever happens later. Each successive sector
load cycle started by the falling edge of WE or CE,
whichever happens later must begin within 30us from
the rising edge of the preceding WE or CE, whichever
happens first. Otherwise, the loading period ends and
internal auto sector erase cycle starts. (Monitor Q3 to
determine if the sector erase timer window is still open,
see section Q3, Sector EraseTimer.) Any command other
than Sector Erase(30H) or Erase Suspend(B0H) during
the time-out period resets the device to read mode.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verify
begin. The erase and verify operations are complete
when the data on Q7 is "1" and the data on Q6 stops
toggling for two consecutive read cycles, at which time
the device returns to the Read mode. The system is not
required to provide any control or timing during these
operations.
When using the Automatic sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
Table 4.Write Operation Status
Status
Q7
Q6
Q5
Q3
Q2 RY/BY
Note1
Note2
Byte Program in Auto Program Algorithm
Auto Erase Algorithm
Q7
Toggle
Toggle
0
N/A
1
No
0
Toggle
0
1
0
0
Toggle
0
1
Erase Suspend Read
(Erase Suspended Sector)
No
Toggle
N/A Toggle
In Progress
Erase Suspended Mode
Erase Suspend Read
Data
Q7
Data Data Data Data
1
0
0
(Non-Erase Suspended Sector)
Erase Suspend Program
Toggle
Toggle
0
1
N/A N/A
Byte Program in Auto Program Algorithm
Q7
N/A
1
No
Toggle
Exceeded
Time Limits Auto Erase Algorithm
0
Toggle
Toggle
1
1
Toggle
0
0
Erase Suspend Program
Q7
N/A N/A
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5:Exceeded Timing Limits " for more information.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
9
MX29F800T/B
If the program opetation was unsuccessful, the data on
Q5 is "1"(seeTable 4), indicating the program operation
exceed internal timing limit.The automatic programming
operation is completed when the data read on Q6 stops
toggling for two consecutive read cycles and the data
on Q7 and Q6 are equivalent to data written to these
two bits, at which time the device returns to the Read
mode(no program verify command is required).
ERASE SUSPEND
This command only has meaning while the state ma-
chine is executing Automatic Sector Erase operation,
and therefore will only be responded during Automatic
Sector Erase operation. When the Erase Suspend com-
mand is written during a sector erase operation, the de-
vice requires a maximum of 100us to suspend the erase
operations.However,When the Erase Suspend command
is written during the sector erase time-out, the device
immediately terminates the time-out period and suspends
the erase operation. After this command has been ex-
ecuted, the command register will initiate erase suspend
mode. The state machine will return to read mode auto-
matically after suspend is ready. At this time, state ma-
chine only allows the command register to respond to
the Read Memory Array, Erase Resume and program
commands.
DATA POLLING-Q7
The MX29F800T/B also features Data Polling as a
method to indicate to the host system that the Auto-
matic Program or Erase algorithms are either in progress
or completed.
While the Automatic Programming algorithm is in op-
eration, an attempt to read the device will produce the
complement data of the data last written to Q7. Upon
completion of the Automatic Program Algorithm an at-
tempt to read the device will produce the true data last
written to Q7. The Data Polling feature is valid after the
rising edge of the fourth WE or CE, whichever happens
first pulse of the four write pulse sequences for auto-
matic program.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend
program operation is complete, the system can once
again read array data within non-suspended sectors.
ERASE RESUME
While the Automatic Erase algorithm is in operation, Q7
will read "0" until the erase operation is competed. Upon
completion of the erase operation, the data on Q7 will
read "1". The Data Polling feature is valid after the ris-
ing edge of the sixth WE or CE, whichever happens first
pulse of six write pulse sequences for automatic chip/
sector erase.
This command will cause the command register to clear
the suspend state and return back to Sector Erase mode
but only if an Erase Suspend command was previously
issued. Erase Resume will not have any effect in all
other conditions.Another Erase Suspend command can
be written after the chip has resumed erasing.
SET-UP AUTOMATIC PROGRAM COMMANDS
The Data Polling feature is active during Automatic Pro-
gram/Erase algorithm or sector erase time-out.(see sec-
tion Q3 Sector Erase Timer)
To initiate Automatic Program mode, A three-cycle com-
mand sequence is required. There are two "unlock" write
cycles. These are followed by writing the Automatic Pro-
gram command A0H.
RY/BY:Ready/Busy
The RY/BY is a dedicated, open-drain output pin that
indicates whether an Automatic Erase/Program algo-
rithm is in progress or complete. The RY/BY status is
valid after the rising edge of the final WE or CE, which-
ever happens first pulse in the command sequence.
Since RY/BY is an open-drain output, several RY/BY
pins can be tied together in parallel with a pull-up resis-
tor to Vcc.
Once the Automatic Program command is initiated, the
next WE pulse causes a transition to an active program-
ming operation. Addresses are latched on the falling
edge, and data are internally latched on the rising
edge of the WE or CE, whichever happens first. The
rising edge of WE or CE, whichever happens first, also
begins the programming operation. The system is not
required to provide further controls or timings. The de-
vice will automatically provide an adequate internally gen-
erated program pulse and verify margin.
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the
Erase Suspend mode.)If the output is high (Ready), the
P/N:PM0578
REV. 1.7, JUL. 24, 2001
10
MX29F800T/B
device is ready to read array data (including during the
Erase Suspend mode), or is in the standby mode.
Q2:Toggle Bit II
The "Toggle Bit II" on Q2, when used with Q6, indicates
whether a particular sector is actively eraseing (that is,
the Automatic Erase alorithm is in process), or whether
that sector is erase-suspended. Toggle Bit II is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence.
Table 4 shows the outputs for RY/BY.
Q6:Toggle BIT I
Toggle Bit I on Q6 indicates whether an Automatic Pro-
gram or Erase algorithm is in progress or complete, or
whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE or CE, which-
ever happens first, in the command sequence(prior to
the program or erase operation), and during the sector
time-out.
Q2 toggles when the system reads at addresses within
those sectors that have been selected for erasure. (The
system may use either OE or CE to control the read
cycles.) But Q2 cannot distinguish whether the sector
is actively erasing or is erase-suspended. Q6, by com-
parison, indicates whether the device is actively eras-
ing, or is in Erase Suspend, but cannot distinguish which
sectors are selected for erasure. Thus, both status bits
are required for sectors and mode information. Refer to
Table 4 to compare outputs for Q2 and Q6.
During an Automatic Program or Erase algorithm op-
eration, successive read cycles to any address cause
Q6 to toggle. The system may use either OE or CE to
control the read cycles.When the operation is complete,
Q6 stops toggling.
Reading Toggle Bits Q6/ Q2
Whenever the system initially begins reading toggle bit
status, it must read Q7-Q0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has com-
pleted the program or erase operation. The system can
read array data on Q7-Q0 on the following read cycle.
After an erase command sequence is written, if all sec-
tors selected for erasing are protected, Q6 toggles and
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
The system can use Q6 and Q2 together to determine
whether a sector is actively erasing or is erase sus-
pended.When the device is actively erasing (that is, the
Automatic Erase algorithm is in progress), Q6 toggling.
When the device enters the Erase Suspend mode, Q6
stops toggling. However, the system must also use Q2
to determine which sectors are erasing or erase-sus-
pended. Alternatively, the system can use Q7.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the sys-
tem also should note whether the value of Q5 is high
(see the section on Q5). If it is, the system should then
determine again whether the toggle bit is toggling, since
the toggle bit may have stopped toggling just as Q5 went
high. If the toggle bit is no longer toggling, the device
has successfuly completed the program or erase op-
eration. If it is still toggling, the device did not complete
the operation successfully, and the system must write
the reset command to return to reading array data.
If a program address falls within a protected sector, Q6
toggles for approximately 2 us after the program com-
mand sequence is written, then returns to reading array
data.
Q6 also toggles during the erase-suspend-program
mode, and stops toggling once the Automatic Program
algorithm is complete.
The remaining scenario is that system initially deter-
mines that the toggle bit is toggling and Q5 has not gone
high. The system may continue to monitor the toggle bit
and Q5 through successive read cycles, determining
the status as described in the previous paragraph. Al-
ternatively, it may choose to perform other system tasks.
In this case, the system must start at the beginning of
the algorithm when it returns to determine the status of
the operation.
Table 4 shows the outputs for Toggle Bit I on Q6.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
11
MX29F800T/B
Q5
TEMPORARY SECTOR UNPROTECT
Exceeded Timing Limits
This feature allows temporary unprotection of previously
protected sector to change data in-system.TheTempo-
rary Sector Unprotect mode is activated by setting the
RESET pin toVID(11.5V-12.5V). During this mode, for-
merly protected sectors can be programmed or erased
as un-protected sector. Once VID is remove from the
RESET pin,all the previously protected sectors are pro-
tected again.
Q5 will indicate if the program or erase time has ex-
ceeded the specified limits(internal pulse count). Un-
der these conditions Q5 will produce a "1". This time-
out condition indicates that the program or erase cycle
was not successfully completed. Data Polling andToggle
Bit are the only operating functions of the device under
this condition.
If this time-out condition occurs during sector erase op-
eration, it specifies that a particular sector is bad and it
may not be reused. However, other sectors are still func-
tional and may be used for the program or erase opera-
tion. The device must be reset to use other sectors.
Write the Reset command sequence to the device, and
then execute program or erase command sequence.
This allows the system to continue to use the other ac-
tive sectors in the device.
Q3
Sector Erase Timer
After the completion of the initial sector erase command
sequence, the sector erase time-out will begin. Q3 will
remain low until the time-out is complete. Data Polling
andToggle Bit are valid after the initial sector erase com-
mand sequence.
If Data Polling or theToggle Bit indicates the device has
been written with a valid erase command, Q3 may be
used to determine if the sector erase timer window is
still open. If Q3 is high ("1") the internally controlled
erase cycle has begun; attempts to write subsequent
commands to the device will be ignored until the erase
operation is completed as indicated by Data Polling or
Toggle Bit. If Q3 is low ("0"), the device will accept addi-
tional sector erase commands. To insure the command
has been accepted, the system software should check
the status of Q3 prior to and following each subsequent
sector erase command. If Q3 were high on the second
status check, the command may not have been ac-
cepted.
If this time-out condition occurs during the chip erase
operation, it specifies that the entire chip is bad or com-
bination of sectors are bad.
If this time-out condition occurs during the byte program-
ming operation, it specifies that the entire sector con-
taining that byte is bad and this sector maynot be re-
used, (other sectors are still functional and can be re-
used).
The time-out condition may also appear if a user tries to
program a non blank location without erasing. In this
case the device locks out and never completes the Au-
tomatic Algorithm operation. Hence, the system never
reads a valid data on Q7 bit and Q6 never stops tog-
gling. Once the Device has exceeded timing limits, the
Q5 bit will indicate a "1". Please note that this is not a
device failure condition since the device was incorrectly
used.
WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 5ns(typical) on CE or WE will
not initiate a write cycle.
LOGICAL INHIBIT
DATA PROTECTION
Writing is inhibited by holding any one of OE = VIL, CE
= VIH or WE = VIH. To initiate a write cycle CE and WE
must be a logical zero while OE is a logical one.
The MX29F800T/B is designed to offer protection
against accidental erasure or programming caused by
spurious system level signals that may exist during
power transition. During power up the device automati-
cally resets the state machine in the Read mode. In
addition, with its control register architecture, alteration
of the memory contents only occurs after successful
completion of specific command sequences. The de-
vice also incorporates several features to prevent inad-
vertent write cycles resulting from VCC power-up and
power-down transition or system noise.
POWER SUPPLY DECOUPLING
In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected be-
tween its VCC and GND.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
12
MX29F800T/B
SECTOR PROTECTION
POWER-UP SEQUENCE
The MX29F800T/B features hardware sector protection.
This feature will disable both program and erase opera-
tions for these sectors protected. To activate this mode,
the programming equipment must forceVID on address
pin A9 and control pin OE, (suggest VID = 12V) A6 =
VIL and CE = VIL.(see Table 2) Programming of the
protection circuitry begins on the falling edge of theWE
pulse and is terminated on the rising edge. Please refer
to sector protect algorithm and waveform.
The MX29F800T/B powers up in the Read only mode.
In addition, the memory contents may only be altered
after successful completion of the predefined command
sequences.
ABSOLUTE MAXIMUM RATINGS
RATING
VALUE
Ambient OperatingTemperature
StorageTemperature
Applied Input Voltage
Applied Output Voltage
VCC to Ground Potential
A9 & OE
-40oC to 85oC
-65oC to 125oC
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 13.5V
To verify programming of the protection circuitry, the pro-
gramming equipment must forceVID on address pin A9
( with CE and OE atVIL and WE atVIH). When A1=1, it
will produce a logical "1" code at device output Q0 for a
protected sector. Otherwise the device will produce 00H
for the unprotected sector. In this mode, the
addresses,except for A1, are don't care. Address loca-
tions with A1 = VIL are reserved to read manufacturer
and device codes.(Read Silicon ID)
NOTICE:
Stresses greater than those listed under ABSOLUTE MAXI-
MUM RATINGS may cause permanent damage to the de-
vice. This is a stress rating only and functional operational
sections of this specification is not implied. Exposure to ab-
solute maximum rating conditions for extended period may
affect reliability.
It is also possible to determine if the sector is protected
in the system by writing a Read Silicon ID command.
Performing a read operation with A1=VIH, it will pro-
duce a logical "1" at Q0 for the protected sector.
NOTICE:
CHIP UNPROTECT
Specifications contained within the following tables are sub-
ject to change.
The MX29F800T/B also features the chip unprotect
mode, so that all sectors are unprotected after chip
unprotect is completed to incorporate any changes in
thecode.Itisrecommendedtoprotectallsectorsbefore
activating chip unprotect mode.
To activate this mode, the programming equipment
must force VID on control pin OE and address pin A9.
The CE pins must be set at VIL. Pins A6 must be set to
VIH.(seeTable2) Refertochipunprotect algorithmand
waveform for the chip unprotect algorithm. The
unprotection mechanism begins on the falling edge of
the WE pulse and is terminated on the rising edge.
It is also possible to determine if the chip is unprotected
in the system by writing the Read Silicon ID command.
PerformingareadoperationwithA1=VIH,itwillproduce
00H at data outputs(Q0-Q7) for an unprotected sector.
It is noted that all sectors are unprotected after the chip
unprotect algorithm is completed.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
13
MX29F800T/B
CAPACITANCE TA = 25oC, f = 1.0 MHz
SYMBOL PARAMETER
MIN.
TYP
MAX.
8
UNIT
pF
CONDITIONS
VIN = 0V
CIN1
CIN2
COUT
Input Capacitance
Control Pin Capacitance
Output Capacitance
12
pF
VIN = 0V
12
pF
VOUT = 0V
READ OPERATION
DC CHARACTERISTICS TA = -40oCTO 85oC,VCC = 5V±10% (TA = 0oC TO 70oC for MX29F800T/B-70)
SYMBOL PARAMETER
MIN.
TYP
MAX.
UNIT
uA
uA
mA
uA
mA
mA
V
CONDITIONS
ILI
Input Leakage Current
1
VIN = GND to VCC
VOUT = GND to VCC
CE = VIH
ILO
Output Leakage Current
StandbyVCC current
±1
ISB1
ISB2
ICC1
ICC2
VIL
1
0.2
5
30
CE = VCC + 0.3V
IOUT = 0mA, f=1MHz
IOUT= 0mA, f=10MHz
OperatingVCC current
50
Input LowVoltage
-0.3(NOTE 1)
2.0
0.8
VIH
Input HighVoltage
VCC + 0.3
0.45
V
VOL
VOH1
VOH2
Output LowVoltage
Output HighVoltage(TTL)
V
IOL = 2.1mA
IOH = -2mA
2.4
V
Output HighVoltage(CMOS) VCC-0.4
V
IOH = -100uA,
VCC=VCC MIN
NOTES:
1.VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2.VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
AC CHARACTERISTICS TA = -40oCTO 85oC,VCC = 5V±10% (TA = 0oCTO 70oC for MX29F800T/B-70)
29F800T/B-70
29F800T/B-90 29F800T/B-12
SYMBOL PARAMETER
MIN. MAX.
MIN. MAX.
MIN. MAX. UNIT CONDITIONS
tACC
tCE
tOE
tDF
Address to Output Delay
70
70
40
90
90
40
120
120
50
ns
ns
ns
ns
ns
CE=OE=VIL
OE=VIL
CE to Output Delay
OE to Output Delay
CE=VIL
OE High to Output Float (Note1)
Address to Output hold
0
30
0
30
0
30
CE=VIL
tOH
CE=OE=VIL
NOTE:
TEST CONDITIONS:
1. tDF is defined as the time at which the output achieves
the open circuit condition and data is no longer driven.
• Input pulse levels: 0.45V/2.4V
• Input rise and fall times is equal to or less than 10ns
• Outputload:1TTLgate+100pF(Includingscopeand
jig)
• Reference levels for measuring timing: 0.8V, 2.0V
P/N:PM0578
REV. 1.7, JUL. 24, 2001
14
MX29F800T/B
READ TIMING WAVEFORMS
VIH
ADD Valid
Addresses
VIL
tCE
VIH
CE
VIL
VIH
WE
tDF
VIL
tOE
VIH
OE
tACC
VIL
tOH
HIGH Z
HIGH Z
VOH
VOL
Outputs
DATA Valid
COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION
DC CHARACTERISTICS TA = -40oCTO 85oC,VCC = 5V±10% (TA = 0oCTO 70oC for MX29F800T/B-70)
SYMBOL
ICC1 (Read)
ICC2
PARAMETER
MIN. TYP
MAX. UNIT CONDITIONS
OperatingVCC Current
30
50
50
50
mA
mA
mA
mA
mA
IOUT=0mA, f=1MHz
IOUT=0mA, F=10MHz
In Programming
ICC3 (Program)
ICC4 (Erase)
ICCES
In Erase
VCC Erase Suspend Current
2
CE=VIH, Erase Suspended
NOTES:
1. VIL min. = -0.6V for pulse width is equal to or less than 20ns.
2. If VIH is over the specified maximum value, programming operation cannot be guranteed.
3. ICCES is specified with the device de-selected. If the device is read during erase suspend mode, current draw is
the sum of ICCES and ICC1 or ICC2.
4. All current are in RMS unless otherwise noted.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
15
MX29F800T/B
AC CHARACTERISTICS TA = -40oCTO 85oC,VCC = 5V±10% (TA = 0oCTO 70oC for MX29F800T/B-70)
29F800T/B-70
29F800T/B-90
29F800T/B-12
SYMBOL PARAMETER
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
tOES
tCWC
tCEP
tCEPH1
tCEPH2
tAS
OE setup time
50
50
50
Command programming cycle
WE programming pulse width
WE programming pluse width High
WE programming pluse width High
Address setup time
70
90
120
55
55
55
20
20
20
20
20
20
0
0
0
tAH
Address hold time
45
45
50
tDS
Data setup time
35
45
50
tDH
Data hold time
0
0
0
tCESC
tAETC
tAETB
tAVT
CE setup time before command write
Total erase time in auto chip erase
0
0
0
13(TYP.)
35
12
13(TYP.)
3(TYP.)
35
12
13(TYP.)
3(TYP.)
35
12
Total erase time in auto sector erase 3(TYP.)
s
Total programming time in auto verify 7/12(TYP.) 210/360 7/12(TYP.) 210/360 7/12(TYP.) 210/360 us
(byte/word program time)
tBAL
Sector address load time
CE Hold Time
100
0
100
0
100
0
us
ns
ns
us
us
us
ms
tCH
tCS
CE setup to WE going low
Voltge Transition Time
0
0
0
tVLHT
tOESP
tWPP1
tWPP2
4
4
4
OE Setup Time to WE Active
Write pulse width for sector protect
4
4
4
10
10
12
10
12
Write pulse width for sector unprotect 12
P/N:PM0578
REV. 1.7, JUL. 24, 2001
16
MX29F800T/B
SWITCHINGTEST CIRCUITS
DEVICE UNDER
TEST
1.6K ohm
+5V
CL
1.2K ohm
DIODES=IN3064
OR EQUIVALENT
CL=100pF Including jig capacitance
SWITCHING TEST WAVEFORMS
2.4V
2.0V
0.8V
2.0V
TEST POINTS
0.8V
0.45V
INPUT
OUTPUT
AC TESTING: Inputs are driven at 2.4V for a logic "1" and 0.45V for a logic "0".
Input pulse rise and fall times are <20ns.
COMMAND WRITE TIMING WAVEFORM
VCC
5V
VIH
Addresses
ADD Valid
VIL
tAH
tAS
VIH
VIL
WE
tOES
tCEPH1
tCEP
tCWC
VIH
VIL
CE
OE
tCS
tCH
tDH
VIH
VIL
tDS
VIH
VIL
Data
DIN
P/N:PM0578
REV. 1.7, JUL. 24, 2001
17
MX29F800T/B
AUTOMATIC PROGRAMMING TIMING
WAVEFORM
One byte data is programmed. Verify in fast algorithm
and additional programming by external control are not
required because these operations are executed auto-
matically by internal control circuit. Programming
completion can be verified by DATA polling and toggle
bit checking after automatic verification starts. Device
outputs DATA during programming and DATA after pro-
gramming on Q7.(Q6 is for toggle bit; see toggle bit,
DATA polling, timing waveform)
AUTOMATIC PROGRAMMING TIMING WAVEFORM (WORD MODE)
Vcc 5V
A11~A18
ADD Valid
ADD Valid
2AAH
555H
A0~A10
WE
555H
tAS
tCWC
tCEPH1
tAH
tCESC
tAVT
CE
OE
tCEP
tDS tDH
tDF
Q0,Q1,
DATA
DATA
Command In
Command In
Command In
Data In
Data In
DATA polling
Q4(Note 1)
DATA
Command In
Command In
Command In
Q7
Command #A0H
Command #55H
Command #AAH
(Q0~Q7)
tOE
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
P/N:PM0578
REV. 1.7, JUL. 24, 2001
18
MX29F800T/B
AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART (WORD MODE)
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data A0H Address 555H
Write Program Data/Address
Data Poll
Increment
Address
from system
No
Verify Word Ok ?
YES
No
Last Address ?
YES
Auto Program Completed
P/N:PM0578
REV. 1.7, JUL. 24, 2001
19
MX29F800T/B
AUTOMATIC CHIP ERASE TIMING WAVEFORM
All data in chip are erased. External erase verification
is not required because data is erased automatically
by internal control circuit. Erasure completion can be
verified by DATA polling and toggle bit checking after
automatic erase starts. Device outputs 0 during era-
sure and 1 after erasure on Q7.(Q6 is for toggle bit; see
toggle bit, DATA polling, timing waveform)
AUTOMATIC CHIP ERASE TIMING WAVEFORM (WORD MODE)
Vcc 5V
A11~A18
2AAH
555H
555H
2AAH
A0~A10
WE
555H
tAS
555H
tCWC
tAH
tCEPH1
tAETC
CE
OE
tCEP
tDS tDH
Command In
Q0,Q1,
Command In
Command In
Command In
Command In
Command In
Command In
Q4(Note 1)
DATA polling
Command In
Command In
Command In
Command In
Command In
Q7
Command #80H
Command #AAH
Command #55H
Command #10H
Command #AAH
(Q0~Q7)
Command #55H
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
P/N:PM0578
REV. 1.7, JUL. 24, 2001
20
MX29F800T/B
AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART (WORD MODE)
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 10H Address 555H
Data Poll
from system
YES
No
DATA = FFh ?
YES
Auto Erase Completed
P/N:PM0578
REV. 1.7, JUL. 24, 2001
21
MX29F800T/B
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector data indicated by A12 to A18 are erased. Exter-
nal erase verify is not required because data are erased
automatically by internal control circuit. Erasure comple-
tion can be verified by DATA polling and toggle bit check-
ing after automatic erase starts. Device outputs 0 dur-
ing erasure and 1 after erasure on Q7.(Q6 is for toggle
bit; see toggle bit, DATA polling, timing waveform)
AUTOMATIC SECTOR ERASE TIMING WAVEFORM (WORD MODE)
Vcc 5V
Sector
Addressn
Sector
Address0
Sector
Address1
A12~A18
A0~A10
555H
555H
555H
tAS
2AAH
2AAH
tCWC
tAH
WE
CE
tCEPH1
tBAL
tAETB
tCEP
tDS
OE
tDH
Command
In
Command
In
Q0,Q1,
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Q4(Note 1)
DATA polling
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Q7
Command #AAH Command #55H Command #80H Command #AAH Command #55H Command #30H
(Q0~Q7)
Command #30H
Command #30H
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
P/N:PM0578
REV. 1.7, JUL. 24, 2001
22
MX29F800T/B
AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART (WORD MODE)
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 30H Sector Address
NO
Last Sector
to Erase ?
YES
Data Poll from System
NO
Data=FFh?
YES
Auto Sector Erase Completed
P/N:PM0578
REV. 1.7, JUL. 24, 2001
23
MX29F800T/B
ERASE SUSPEND/ERASE RESUME FLOWCHART
START
Write Data B0H
NO
Toggle Bit checking Q6
not toggled
YES
Read Array or
Program
Reading or
NO
Programming End
YES
Write Data 30H
Continue Erase
Another
NO
Erase Suspend ?
YES
P/N:PM0578
REV. 1.7, JUL. 24, 2001
24
MX29F800T/B
TIMING WAVEFORM FOR SECTOR PROTECTION
A1
A6
12V
5V
A9
tVLHT
Verify
12V
5V
OE
tVLHT
tVLHT
tWPP 1
WE
tOESP
CE
Data
01H
F0H
tOE
A18-A12
Sector Address
P/N:PM0578
REV. 1.7, JUL. 24, 2001
25
MX29F800T/B
TIMING WAVEFORM FOR CHIP UNPROTECTION
A1
12V
5V
A9
tVLHT
A6
Verify
12V
5V
OE
tVLHT
tVLHT
tWPP 2
WE
tOESP
CE
Data
00H
F0H
tOE
A18-A12
Sector Address
P/N:PM0578
REV. 1.7, JUL. 24, 2001
26
MX29F800T/B
SECTOR PROTECTION ALGORITHM
START
Set Up Sector Addr
(A18,A16,A15,A14,A13,A12)
PLSCNT=1
OE=VID,A9=VID,CE=VIL
A6=VIL
Activate WE Pulse
Time Out 10us
Set WE=VIH, CE=OE=VIL
A9 should remain VID
Read from Sector
Addr=SA, A1=1
No
No
Data=01H?
Yes
PLSCNT=32?
Yes
Device Failed
Yes
Protect Another
Sector?
No
Remove VID from A9
Write Reset Command
Sector Protection
Complete
P/N:PM0578
REV. 1.7, JUL. 24, 2001
27
MX29F800T/B
CHIP UNPROTECTION ALGORITHM
START
Protect All Sectors
PLSCNT=1
Set OE=A9=VID
CE=VIL,A6=1
Activate WE Pulse
Time Out 12ms
Increment
PLSCNT
Set OE=CE=VIL
A9=VID,A1=1
Set Up First Sector Addr
Read Data from Device
No
No
Data=00H?
Yes
PLSCNT=1000?
Increment
Sector Addr
Yes
Device Failed
No
All sectors have
been verified?
Yes
Remove VID from A9
Write Reset Command
Chip Unprotect
Complete
* It is recommended before unprotect whole chip, all sectors should be protected in advance.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
28
MX29F800T/B
AC CHARACTERISTICS
Parameter Std Description
Test Setup All Speed Options Unit
tREADY1
tREADY2
RESET PIN Low (During Automatic Algorithms)
MAX
MAX
MIN
20
us
to Read or Write (See Note)
RESET PIN Low (NOT During Automatic
Algorithms) to Read orWrite (See Note)
RESET Pulse Width (During Automatic Algorithms)
500
ns
tRP1
tRP2
tRH
10
500
0
us
ns
ns
ns
ns
RESET Pulse Width (NOT During Automatic Algorithms) MIN
RESET HighTime Before Read(See Note)
RY/BY Recovery Time(to CE, OE go low)
RY/BY Recovery Time(toWE go low)
MIN
MIN
MIN
tRB1
tRB2
0
50
Note:Not 100% tested
RESET TIMING WAVFORM
RY/BY
tRH
CE, OE
RESET
tRP2
tReady2
Reset Timing NOT during Automatic Algorithms
tReady1
RY/BY
CE, OE
WE
tRB1
tRB2
RESET
tRP1
Reset Timing during Automatic Algorithms
P/N:PM0578
REV. 1.7, JUL. 24, 2001
29
MX29F800T/B
TEMPORARY SECTOR UNPROTECT
Parameter Std. Description
Test Setup
Min
AllSpeed Options Unit
tVIDR
tRSP
VID Rise and Fall Time (See Note)
RESET SetupTime forTemporary Sector Unprotect
500
4
ns
us
Min
Note:
Not 100% tested
TEMPORARY SECTOR UNPROTECT TIMING DIAGRAM
12V
RESET
0 or 5V
0 or 5V
Program or Erase Command Sequence
tVIDR
tVIDR
CE
WE
tRSP
RY/BY
P/N:PM0578
REV. 1.7, JUL. 24, 2001
30
MX29F800T/B
TEMPORARY SECTOR UNPROTECT ALGORITHM
Start
RESET = VID (Note 1)
Perform Erase or Program Operation
Operation Completed
RESET = VIH
Temporary Sector Unprotect Completed(Note 2)
Note :
1. All protected sectors are temporary unprotected.
VID=11.5V~12.5V
2. All previously protected sectors are protected again.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
31
MX29F800T/B
DATA POLLING TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)
VA
VA
Address
CE
tCE
tOE
OE
tDF
tOH
High Z
High Z
Complement
Status Data
Status Data
Status Data
True
True
Valid Data
Valid Data
Q7
Q0-Q6
NOTES:
VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data raed cycle.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
32
MX29F800T/B
Data Polling Algorithm
START
Read Q7~Q0
Add. = VA (1)
Yes
Q7 = Data ?
No
No
Q5 = 1 ?
Yes
Read Q7~Q0
Add. = VA
Yes
Q7 = Data ?
(2)
No
PASS
FAIL
Notes:
1.VA=valid address for programming.
2.Q7 should be rechecked even Q5="1"because Q7 may change simultaneously with Q5.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
33
MX29F800T/B
TOGGLE BIT TIMING WAVEFORMS (DURING AUTOMATIC ALOGRITHMS)
VA
VA
VA
VA
Address
CE
tCE
tOE
OE
tDF
tOH
Valid Status
(second read)
Valid Status
(first raed)
Valid Data
Valid Data
Q6/Q2
(stops toggling)
NOTES:
VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle, and
array data read cycle.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
34
MX29F800T/B
Toggle Bit Algorithm
START
Read Q7~Q0
Read Q7~Q0
(Note 1)
NO
Toggle Bit Q6
=Toggle?
YES
NO
Q5=1?
YES
(Note 1,2)
Read Q7~Q0 Twice
Toggle Bit Q6=
Toggle?
YES
Program/Erase Operation Not
Program/Erase Operation Complete
Complete, Write Reset Command
Note:
1.Read toggle bit twice to determine whether or not it is toggling.
2.Recheck toggle bit because it may stop toggling as Q5 changes to "1".
P/N:PM0578
REV. 1.7, JUL. 24, 2001
35
MX29F800T/B
ID CODE READ TIMING WAVEFORM
VCC
5V
VID
ADD
A9
VIH
VIL
VIH
VIL
ADD
A0
tACC
tACC
ADD
A1-A8
VIH
A10-A18 VIL
CE
VIH
VIL
VIH
VIL
tCE
WE
OE
tOE
VIH
VIL
tDF
tOH
tOH
VIH
VIL
DATA
Q0-Q15
DATA OUT
DATA OUT
D6H/58H (Byte)
C2H/00C2H
22D6H/2258H (Word)
P/N:PM0578
REV. 1.7, JUL. 24, 2001
36
MX29F800T/B
ERASE AND PROGRAMMING PERFORMANCE(1)
LIMITS
PARAMETER
MIN.
TYP.(2)
MAX.(3)
UNITS
Sector Erase Time
3
13
7
12
35
sec
sec
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
Erase/Program Cycles
210
360
24
us
12
8
us
sec
100,000
Cycles
Note: 1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25°C, 5V.
3.Maximum values measured at 25°C, 4.5V.
LATCHUP CHARACTERISTICS
MIN.
-1.0V
MAX.
Input Voltage with respect to GND on all pins except I/O pins
Input Voltage with respect to GND on all I/O pins
Current
13.5V
Vcc + 1.0V
+100mA
-1.0V
-100mA
Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time.
P/N:PM0578
REV. 1.7, JUL. 24, 2001
37
MX29F800T/B
ORDERING INFORMATION
PLASTIC PACKAGE (Top Boot Sector as an sample. For Bottom Boot Sector ones,MX29F800Txx will
change to MX29F800Bxx)
PART NO.
ACCESSTIME OPERATING CURRENT
STANDBY CURRENT
PACKAGE
(ns)
70
MAX.(mA)
MAX.(uA)
MX29F800TMC-70
MX29F800TMC-90
MX29F800TMC-12
MX29F800TTC-70
50
50
50
50
5
5
5
5
44 Pin SOP
44 Pin SOP
44 Pin SOP
48 Pin TSOP
(NormalType)
48 Pin TSOP
(NormalType)
48 Pin TSOP
(NormalType)
44 Pin SOP
44 Pin SOP
48 Pin TSOP
(NormalType)
48 Pin TSOP
(NormalType)
90
120
70
MX29F800TTC-90
MX29F800TTC-12
90
50
50
5
5
120
MX29F800TMI-90
MX29F800TMI-12
MX29F800TTI-90
90
50
50
50
5
5
5
120
90
MX29F800TTI-12
120
50
5
P/N:PM0578
REV. 1.7, JUL. 24, 2001
38
MX29F800T/B
PACKAGE INFORMATION
48-PIN PLASTIC TSOP
P/N:PM0578
REV. 1.7, JUL. 24, 2001
39
MX29F800T/B
44-PIN PLASTIC SOP
P/N:PM0578
REV. 1.7, JUL. 24, 2001
40
MX29F800T/B
REVISION HISTORY
Revision No. Description
Page
P16,37
P11
Date
MAY/09/2000
1.1
Modified chip erase time to 13/35 sec
Corrected content error
1.2
Add erase suspend ready max. 100us in ERASE SUSPEND's
section at page10
Corrected content error at TOP BOOT SECTOR ADDRESS TABLE P3
To add the fast access time to 70ns
Modify Erase/Program Cycles:10,000 Cycles-->100,000 Cycles
To modify "Package Information"
P10
MAY/29/2000
JUN/08/2000
1.3
1.4
1.5
1.6
1.7
P1,14,16,38 DEC/04/2000
P1,37
P39~40
P13~16,38
FEB/12/2001
JUN/15/2001
JUL/24/2001
To add I-grade (TA = -40°C TO 85°C)
P/N:PM0578
REV. 1.7, JUL. 24, 2001
41
MX29F800T/B
MACRONIX INTERNATIONAL CO., LTD.
HEADQUARTERS:
TEL:+886-3-578-6688
FAX:+886-3-563-2888
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TEL:+32-2-456-8020
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FAX:+65-348-8096
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CHICAGO OFFICE:
TEL:+1-847-963-1900
FAX:+1-847-963-1909
http : //www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
42
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