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NE5510279A-T1 [NEC]

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN;

NE5510279A-T1


元器件型号：	NE5510279A-T1
生产厂家：	NEC
描述和应用：	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN 放大器晶体管
PDF文件：	总10页 (文件大小：60K)
下载文档：	下载PDF数据表文档文件
型号参数：NE5510279A-T1参数

NE5510279A-T1-A

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE5510379A-T1

TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.5A I(D),BEAM LEAD

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0 RENESAS

NE5510K0+/-1%

Fixed Resistor, Metal Film, 0.25W, 10000ohm, 250V, 1% +/-Tol, -25,25ppm/Cel

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0 VISHAY

NE5511279A

7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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48 CEL

NE5511279A

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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77 NEC

NE5511279A

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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43 NEC

NE5511279A-A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE5511279A-T1

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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24 NEC

NE5511279A-T1

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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28 NEC

NE5511279A-T1

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 CEL

NE5511279A-T1A

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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28 NEC

NE5511279A-T1A

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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12 NEC

NE5511279A-T1A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 CEL

NE5511279A-T1-A

7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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32 CEL

NE5511279A-T1A-A

7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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24 CEL

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