首页 |元器件品牌

NE5510279A-T1 [NEC]

3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS; 3.5V操作硅射频功率MOSFET用于GSM1800发送放大器
NE5510279A-T1
元器件型号： NE5510279A-T1
生产厂家： NEC    NEC
描述和应用：

3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
3.5V操作硅射频功率MOSFET用于GSM1800发送放大器

晶体 放大器 射频场效应晶体管 GSM
PDF文件： 总5页 (文件大小：42K)
下载文档：  下载PDF数据表文档文件
型号参数：NE5510279A-T1参数
 查看货源

NE5510279A-T1-A

 RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 NEC

NE5510379A-T1

 TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.5A I(D),BEAM LEAD

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 RENESAS

NE5510K0+/-1%

 Fixed Resistor, Metal Film, 0.25W, 10000ohm, 250V, 1% +/-Tol, -25,25ppm/Cel

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 VISHAY

NE5511279A

 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
48 CEL

NE5511279A

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
77 NEC

NE5511279A

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
43 NEC

NE5511279A-A

 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 NEC

NE5511279A-T1

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
24 NEC

NE5511279A-T1

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
28 NEC

NE5511279A-T1

 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 CEL

NE5511279A-T1A

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
28 NEC

NE5511279A-T1A

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
12 NEC

NE5511279A-T1A

 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 CEL

NE5511279A-T1-A

 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
32 CEL

NE5511279A-T1A-A

 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
24 CEL
©2020 ICPDF网 联系我们和版权申明