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NE5520279A-A [NEC]

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN;
NE5520279A-A
元器件型号： NE5520279A-A
生产厂家： NEC    NEC
描述和应用：

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

晶体 晶体管 放大器
PDF文件： 总7页 (文件大小：167K)
下载文档：  下载PDF数据表文档文件
型号参数：NE5520279A-A参数
 查看货源

NE5520279A-T1

 NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

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33 NEC

NE5520279A-T1

 NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

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26 NEC

NE5520279A-T1A

 RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, 79A, 4 PIN

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0 NEC

NE5520279A-T1-A

 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

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35 CEL

NE5520379A

 NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

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104 CEL

NE5520379A

 RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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2 NEC

NE5520379A-A

 RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE5520379A-T1

 RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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0 CEL

NE5520379A-T1A

 暂无描述

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0 CEL

NE5520379A-T1A-A

 NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

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75 CEL

NE5521

 LVDT signal conditioner

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338 PHILIPS

NE5521D

 LVDT signal conditioner

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177 PHILIPS

NE5521D-T

 LVDT Conditioner

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136 ETC

NE5521F

 IC SIGNAL CONDITIONER, CDIP18, CERDIP-18, Position Converter

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0 PHILIPS

NE5521N

 LVDT signal conditioner

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167 PHILIPS
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