UPA863TS-FB-A [NEC]
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6;
| 型号： | UPA863TS-FB-A |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6 放大器 ISM频段 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA863TS
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN SUPER LEAD-LESS MINIMOLD
FEATURES
•
•
Low voltage operation
2 different built-in transistors (2SC5436, 2SC5800)
Q1: Built-in high gain transistor
fT = 12.0 GHz TYP., S21e 2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC applications
fT = 4.5 GHz TYP., S21e 2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
6-pin super lead-less minimold package
•
BUILT-IN TRANSISTORS
Q1
Q2
Flat-lead 3-pin thin-type ultra super minimold part No.
2SC5436
2SC5800
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
µPA863TS
µPA863TS-T3
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10333EJ02V0DS (2nd edition)
Date Published September 2003 CP(K)
The mark shows major revised points.
Printed in Japan
NEC Compound Semiconductor Devices 2002, 2003
µPA863TS
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Q1
5
Q2
9
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
V
V
3
5.5
1.5
100
110
2
V
30
90
mA
mW
Note
Total Power Dissipation
Ptot
130 in 2 elements
150
Junction Temperature
Storage Temperature
Tj
°C
°C
Tstg
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
2
Data Sheet PU10333EJ02V0DS
µPA863TS
ELECTRICAL CHARACTERISTICS (TA = +25°C)
(1) Q1
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 5 V, IE = 0 mA
MIN.
−
TYP.
−
MAX.
Unit
nA
nA
−
100
100
140
−
IEBO
VEB = 1 V, IC = 0 mA
−
−
Note 1
hFE
VCE = 1 V, IC = 10 mA
70
10.0
7.0
−
110
12.0
9.0
1.5
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
fT
VCE = 1 V, IC = 10 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
GHz
dB
dB
2
S21e
−
VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
NF
2.0
Note 2
Reverse Transfer Capacitance
Cre
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
−
0.4
0.7
pF
(2) Q2
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 5 V, IE = 0 mA
MIN.
−
TYP.
−
MAX.
600
600
145
−
Unit
nA
IEBO
VEB = 1 V, IC = 0 mA
−
−
nA
Note 1
hFE
VCE = 1 V, IC = 5 mA
100
3.0
5.0
3.0
4.5
−
120
4.5
6.5
4.0
5.5
1.9
−
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
fT
fT
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 15 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 15 mA, f = 2 GHz
GHz
GHz
dB
−
2
S21e
−
2
S21e
−
dB
VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
NF
2.5
dB
Note 2
Reverse Transfer Capacitance
Cre
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
−
0.6
0.8
pF
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB
xC
Marking
hFE Value of Q1
hFE Value of Q2
70 to 140
100 to 145
3
Data Sheet PU10333EJ02V0DS
µPA863TS
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
150
2 Elements in total
130
Q2
110
100
90
Q1
50
0
25
50
75
100
125
(˚C)
150
Ambient Temperature T
A
Q1
Q2
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.6
1.0
f = 1 MHz
f = 1 MHz
0.5
0.4
0.3
0.2
0.1
0.8
0.6
0.4
0.2
0
1
2
3
4
5
0
2
4
6
8
10
Collector to Base Voltage VCB (V)
Collector to Base Voltage VCB (V)
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10333EJ02V0DS
µPA863TS
Q1
Q2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
100
10
1
VCE = 1 V
VCE = 1 V
0.1
0.1
0.01
0.001
0.01
0.001
0.0001
0.0001
0.5
0.6
0.7
0.8
0.9
1.0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
100
10
1
VCE = 2 V
VCE = 2 V
0.1
0.1
0.01
0.001
0.01
0.001
0.0001
0.0001
0.5
0.6
0.7
0.8
0.9
1.0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
Remark The graphs indicate nominal characteristics.
5
Data Sheet PU10333EJ02V0DS
µPA863TS
Q1
Q2
COLLECTOR CURRENT vs.
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO EMITTER VOLTAGE
60
50
40
30
20
10
35
30
25
20
15
10
5
500 A
µ
450
µ
A
µ
400 A
350 A
µ
400
µ
A
300
250
200
150
µ
µ
µ
µ
A
A
A
A
360
µ
A
320
280
240
µ
A
µ
A
µ
A
200 A
µ
160 A
µ
100
µ
A
120
80
µ
µ
A
A
IB = 50 A
µ
µ
I
B
= 40
6
A
0
1
2
3
4
0
1
2
3
4
5
7
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PU10333EJ02V0DS
µPA863TS
Q1
Q2
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10
1 000
100
10
V
CE = 1 V
V
CE = 1 V
0.1
1
10
(mA)
100
0.1
1
10
(mA)
100
Collector Current I
C
Collector Current I
C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10
1 000
100
10
V
CE = 2 V
V
CE = 2 V
0.1
1
10
(mA)
100
0.1
1
10
(mA)
100
Collector Current I
C
Collector Current I
C
Remark The graphs indicate nominal characteristics.
7
Data Sheet PU10333EJ02V0DS
µPA863TS
PACKAGE DIMENSIONS
6-PIN SUPER LEAD-LESS MINIMOLD (UNIT: mm)
0.9±0.05
0.7±0.05
(Top View)
Q1
C1
E1
C2
B1
E2
B2
1
6
5
4
2
3
Q2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
8
Data Sheet PU10333EJ02V0DS
µPA863TS
•
The information in this document is current as of September, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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M8E 00. 4-0110
9
Data Sheet PU10333EJ02V0DS
µPA863TS
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
E-mail: salesinfo@csd-nec.com (sales and general)
techinfo@csd-nec.com (technical)
http://www.ncsd.necel.com/
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
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http://www.cel.com/
0307
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