N-HFA15TB60 [NELLSEMI]
FRED Ultrafast Soft Recovery Diode, 15 A; FRED超快软恢复二极管， 15 A
| 型号： | N-HFA15TB60 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | FRED Ultrafast Soft Recovery Diode, 15 A |
| 文件： | 总6页 (文件大小：656K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
N-HFA15TB60 RoHS
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 15 A
Available
RoHS*
COMPLIANT
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low IRRM
Very low Qrr
Specified at operating conditions
Lead (Pb)-free
Designed and qualified for industrial level
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
cathode
2
Reduced parts count
DESCRIPTION
HFA15TB60 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features
a superb combination of characteristics which result
in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600V
and 15 A continuous current, the HFA15TB60 is
especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultrafast
recovery time, the FRED product line features
1
3
Cathode Anode
TO-220AC
extremely low values of peak recovery current (I
)
RRM
and does not exhibit any tendency to “snap-off” during
PRODUCT SUMMARY
the t portion of recovery. The FRED features combine
b
VR
600 V
1.7 V
to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode
and the switching transistor. These FRED advantages
can help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA15TB60
is ideally suited for applications in power supplies and
conversion systems (such as inverters), motor drives,
and many other similar applications where high speed,
high efficiency is needed.
VF at 15A at 25 °C
IF(AV)
15 A
19 ns
150 °C
84 nC
t
rr (typical)
TJ (maximum)
Qrr
dI(rec)M/dt
188 A/μs
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
600
15
UNITS
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
V
TC= 100 ºC
IF
IFSM
IFRM
150
60
A
TC= 25 ºC
74
Maximum power dissipation
PD
W
TC
= 100 ºC
29
Operating junction and storage temperature range
TJ, TStg
- 55 to 150
ºC
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Page 1 of 6
RoHS
N-HFA15TB60 RoHS
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
(T = 25 ºC unless otherwise specified)
J
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
TYP.
UNITS
MIN.
Cathode to anode
breakdown voltage
-
-
VBR
IR = 100 µA
600
IF = 15 A
IF = 30 A
-
-
1.5
1.8
1.4
1.7
2.1
1.6
V
VFM
Maximum forward voltage
IF = 15 A, TJ = 125 ºC
-
VR = VR rated
TJ = 125°C, VR = VR rated
VR = 200V
-
-
1.0
400
25
10
1000
Maximum reverse
leakage current
IRM
µA
Junction capacitance
Series inductance
pF
nH
CT
LS
50
-
-
8
Measured lead to lead 5 mm from package body
-
DYNAMIC RECOVERY CHARACTERISTICS PERLEG (T = 25 ºC unless otherwise specified)
J
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
MAX. UNITS
TYP.
IF = 0.5A, IR = 1.0A, IRR = 250mA (RG#1 CKT)
IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C
-
-
30
22
trr
-
19
ns
Reverse recovery time
trr1
trr2
-
-
TJ = 25 ºC
TJ = 125 ºC
TJ = 25 ºC
42
74
60
120
IRRM1
-
-
6.0
4.0
Peak recovery current
A
IF= 15A
dIF/dt = -200 A/µs
VR = 200 V
IRRM2
Qrr1
TJ = 125 ºC
10
6.5
84
-
-
TJ = 25 ºC
180
Reverse recovery charge
nC
Qrr2
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
241
188
160
600
-
dl(rec)M/dt1
dl(rec)M/dt2
-
Peak rate of fall of recovery
current during tb
A/µs
-
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
-
-
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
300
°C
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
RthJC
RthJA
RthCS
-
-
1.7
Typical socket mount
-
-
-
K/W
80
-
Mounting surface, flat, smooth and gerased
0.5
g
-
-
-
-
2
Weight
oz.
0.07
6
(5)
12
(10)
kgf . cm
(lbf . in)
Mounting torque
Marking device
-
Case style TO-220AC
HFA15TB60
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Page 2 of 6
RoHS
N-HFA15TB60 RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.1 Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig.2 Typical Reverse Current vs. Reverse Voltage
100
10
10 000
T
= 150 ºC
J
1000
100
10
T
= 125 ºC
J
1
T
= 25 ºC
J
T
T
T
= 150 ºC
= 125 ºC
= 25 ºC
J
J
J
0.1
0.01
1
1.0
100
200
300
400
500
600
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VFM - Forward Voltage Drop (V)
Reverse Voltage-V (V)
R
Fig.3 Typical Junction Capacitance vs. Reverse Voltage
100
T
= 25 ºC
J
10
10
100
Reverse Voltage-V (V)
1000
R
Fig.4 Maximum Thermal Impedance Z
Characteristics
thJC
10
1
P
DM
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = P DM x Z
Single pulse
+ T
(thermal response)
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration-t (s)
1
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Page 3 of 6
RoHS
N-HFA15TB60 RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.5 Typical Reverse Recovery Time vs. dIF/dt
Fig.6 Typical Recovery Current vs. dIF/dt
25
100
80
60
40
20
0
I = 30 A
V
T
= 200 V
= 125 ºC
= 25 ºC
F
R
I = 15 A
J
J
F
T
20
15
10
5
I = 5 A
F
I = 30 A
F
I = 15 A
F
I = 5 A
F
V
T
= 200 V
= 125 ºC
= 25 ºC
R
J
J
T
0
100
1000
100
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
/dt
Fig.7 Typical Stored Charge vs. dIF
Fig.8 Typical dI(rec)M/dt vs. dlF/dt
800
700
600
500
400
300
200
100
0
10000
1000
100
V
T
= 200 V
= 125 ºC
= 25 ºC
R
J
J
I = 30 A
F
T
I = 15 A
F
I = 5 A
F
I = 30 A
F
I = 15 A
F
I = 5 A
F
V
T
= 200 V
= 125 ºC
= 25 ºC
R
J
J
T
100
1000
100
1000
dI /dt (A/μs)
dIF/dt (A/μs)
F
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Page 4 of 6
RoHS
N-HFA15TB60 RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.9 Reverse Recovery Parameter Test Circuit
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
/dt
dI
F
adjust
IRFP250
G
S
Fig.10 Reverse Recovery Waveform and Definitions
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dI /dt - rate of change of current
F
and IRRM
through zero crossing
t
x l
2
rr
RRM
(2) IRRM - peak reverse recovery current
Q
=
rr
(3) t - reverse recovery time measured
rr
(5) dI(rec)M/dt - peak rate of change of
from zero crossing point of negative
current during t portion of trr
b
going I to point where a line passing
F
through 0.75 IRRM and 0.50RIRM
extrapolated to zero current.
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Page 5 of 6
RoHS
N-HFA15TB60 RoHS
SEMICONDUCTOR
Nell High Power Products
ORDERING INFORMATION TABLE
Device code
-
HFA 15 TB
N
60
1
2
3
4
5
1
2
3
4
5
-
-
-
Nell Semiconductors product
FRED family
Current rating (15 = 15 A)
-
-
Package : TB = TO-220AC
Voltage rating (60 = 600 V)
TO-220AC Package Outline
0.404 [10.26]
0.393 [9.98]
0.186 [4.72]
0.174 [4.42]
Cathode
0.114 [2.90]
0.102 [2.59]
0.058 [1.47]
0.047 [1.19]
Ø0.153 [3.89]
Ø0.149 [3.78]
0.508 [12.90]
0.492 [12.50]
0.362 [9.19]
0.354 [8.99]
0.154 [3.91]
0.134 [3.40]
0.110 [2.79]
0.099 [2.51]
0.531 [13.49]
0.515 [13.08]
0.057 [1.45]
0.047 [1.19]
Cathode
Anode
0.034 [0.86]
0.030 [0.76]
0.018 [0.46]
0.014 [0.36]
0.100 [2.54] TYP
0.204 [5.18]
0.196 [4.98]
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Page 6 of 6
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