GAN039-650NTBA [NEXPERIA]
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i packageDevelopment;型号: | GAN039-650NTBA |
厂家: | Nexperia |
描述: | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i packageDevelopment |
文件: | 总10页 (文件大小:279K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GAN039-650NTBA
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i
package
19 April 2021
Objective data sheet
1. General description
The GAN039-650NTBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a
CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-
voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering
superior reliability and performance.
This product has been fully designed and qualified to meet AEC-Q101 requirements.
2. Features and benefits
•
Fully automotive qualified to AEC-Q101:
175 °C rating suitable for thermally demanding environments
Simplified driver design as standard level MOSFET gate drivers can be used:
•
•
•
•
0 V to 12 V drive voltage
Gate threshold voltage VGSth of 4 V
•
•
•
•
•
Robust gate oxide with ±20 V VGS rating
High gate threshold voltage of 4 V for gate bounce immunity
Low body diode Vf for reduced losses and simplified dead-time adjustments
Transient over-voltage capability for increased robustness
CCPAK package technology:
•
•
•
•
Improved reliability, with reduced Rth(j-mb) for optimal cooling
Lower inductances for lower switching losses and EMI
175 °C maximum junction temperature
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike
traditional QFN packages
•
•
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joints
3. Applications
•
•
•
•
•
•
Automotive On-Board-Charger systems
Automotive DC-DC
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
650
60
Unit
V
drain-source voltage
drain current
-55 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C
-
-
-
-
-
-
ID
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
300
W
Nexperia
GAN039-650NTBA
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj
junction temperature
-55
-
175
°C
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 32 A; Tj = 25 °C
-
33
39
mΩ
QGD
gate-drain charge
total gate charge
ID = 32 A; VDS = 400 V; VGS = 10 V;
Tj = 25 °C
-
-
5
-
-
nC
nC
QG(tot)
30
Source-drain diode
Qr
recovered charge
IS = 32 A; dIS/dt = -1000 A/µs;
VGS = 0 V; VDS = 400 V; Fig. 3
-
150
-
nC
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
gate
Simplified outline
Graphic symbol
6
5
4
3
2
1
D
G
S
S
S
S
S
D
D
D
D
D
D
S
2
source
source
source
source
source
drain
3
4
5
G
6
7
8
9 10 11 12
S
7
CCPAK (SOT8005)
aaa-028116
8
drain
9
drain
10
11
12
mb
drain
drain
drain
mounting base; connected
to source
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
GAN039-650NTBA
CCPAK
Plastic, surface mounted copper clip package inverted
(CCPAK1212i); 13 terminals; 2.0 mm pitch, 12 mm x 12
mm x 2.5 mm body
SOT8005
7. Marking
Table 4. Marking codes
Type number
Marking code
039INTBA
GAN039-650NTBA
©
GAN039-650NTBA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Objective data sheet
19 April 2021
2 / 10
Nexperia
GAN039-650NTBA
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
650
Unit
V
drain-source voltage
-55 °C ≤ Tj ≤ 175 °C
-
-
VTDS
transient drain to source pulsed; tp = 1 µs; δfactor = 0.01
voltage
[tbd]
V
VGS
Ptot
ID
gate-source voltage
-20
20
V
total power dissipation
drain current
Tmb = 25 °C; Fig. 1
-
300
60
W
A
VGS = 10 V; Tmb = 25 °C
VGS = 10 V; Tmb = 100 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
-
42
A
IDM
peak drain current
storage temperature
junction temperature
-
240
175
175
260
A
Tstg
Tj
-55
-55
-
°C
°C
°C
Tsld(M)
peak soldering
temperature
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C; VGS = 0 V
-
-
55
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
240
03aa16
120
P
der
(%)
80
40
0
0
50
100
150
200
T
(°C)
mb
Fig. 1. Normalized total power dissipation as a function of mounting base temperature
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
0.5
Unit
Rth(j-mb)
thermal resistance from
junction to mounting
base
-
-
K/W
©
GAN039-650NTBA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Objective data sheet
19 April 2021
3 / 10
Nexperia
GAN039-650NTBA
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VGS(th)
IDSS
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C
voltage
3.3
4
4.8
V
drain leakage current
VDS = 650 V; VGS = 0 V; Tj = 25 °C
VDS = 650 V; VGS = 0 V; Tj = 175 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 32 A; Tj = 25 °C
-
-
-
-
-
-
[tbd]
[tbd]
10
[tbd]
-
µA
µA
nA
IGSS
gate leakage current
400
400
39
-
10
nA
RDSon
drain-source on-state
resistance
33
mΩ
mΩ
VGS = 10 V; ID = 32 A; Tj = 175 °C;
Fig. 2
80
RG
gate resistance
f = 1 MHz
-
1.88
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = 32 A; VDS = 400 V; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
30
9
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
5
VDS = 400 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C
1500
147
5
Coss
Crss
reverse transfer
capacitance
Co(er)
effective output
capacitance, energy
related
0 V ≤ VDS ≤ 400 V; VGS = 0 V;
f = 1 MHz; Tj = 25 °C
-
-
220
380
-
-
pF
pF
Co(tr)
effective output
capacitance, time
related
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 400 V; RL = 12.5 Ω; VGS = 12 V;
RG(ext) = 30 Ω
-
-
-
-
-
[tbd]
[tbd]
[tbd]
[tbd]
150
-
-
-
-
-
ns
ns
ns
ns
nC
turn-off delay time
fall time
Qoss
output charge
VGS = 0 V; VDS = 400 V
Source-drain diode
VSD
source-drain voltage
IS = 32 A; VGS = 0 V; Tj = 25 °C
IS = 16 A; VGS = 0 V; Tj = 25 °C
-
-
-
-
1.8
-
-
-
-
V
1.3
V
trr
reverse recovery time IS = 32 A; dIS/dt = -1000 A/µs;
[tbd]
150
ns
nC
VGS = 0 V; VDS = 400 V; Fig. 3
Qr
recovered charge
©
GAN039-650NTBA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Objective data sheet
19 April 2021
4 / 10
Nexperia
GAN039-650NTBA
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
aaa-027810
3
2.5
2
a
1.5
1
0.5
0
-60 -30
0
30
60
90 120 150 180
T (°C)
j
Fig. 2. Normalized drain-source on-state resistance factor as a function of junction temperature
I, V
dl /dt
S
I
t
rr
S
t
0.25 I
RM
Q
r
I
RM
V
RRM
A
DUT
-
V
SD
+
aaa-029277
Fig. 3. Diode reverse recovery test circuit and waveform
11. Application information
A Ferrite bead must be fitted in series with the gate of the GaN FET and should be located as
close as possible to the gate pin, (see figure below). Keeping the gate-source loop as compact as
possible minimizes the gate loop inductance. The Ferrite bead damps the resonant circuit made
up of the gate source loop inductance and the GaN FET input capacitance, thus providing fast
switching stability. It is recommended that the impedance of the ferrite bead should be 30 Ω @
100 MHz, (recommended p/n BLM18PG300SN1D). A series resistance (RG) of 10 - 15 Ω is also
recommended.
©
GAN039-650NTBA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Objective data sheet
19 April 2021
5 / 10
Nexperia
GAN039-650NTBA
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
V
DC bus
BUS
Q
Q
RC
2
driver
driver
DCL
R
FB1
FB1
G
G
(place as close as
possible to drain pin)
V
V
o
S
1
R
R
SN
RC
SN
C
SN
aaa-030816
Fig. 4. Ferrite bead and RC snubber
A DC-link snubber is recommended in all cases. Optimal is 20 nF in series with 4 Ω, most easily
achieved with parallel combination 10 nF and 8 Ω. This snubber lowers the Q factor of any
resonance in the bus. That resonance will act as a load on the high gain amplifier that is the GaN
FET and can lead to instability.
©
GAN039-650NTBA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Objective data sheet
19 April 2021
6 / 10
Nexperia
GAN039-650NTBA
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
12. Package outline
Plastic, surface mounted copper clip package inverted (CCPAK1212i);
13 terminals; 2.0 mm pitch, 12 mm x 12 mm x 2.5 mm body
SOT8005
L
1
D
A
3
y
C
A
1
Gauge plane
Seating plane
A
A
2
θ
C
detail X
(View rotated 90° CCW)
Exposed
thermal
pad area
e
w
A
b
C
A-B D
2
6
1
D
2
E
2
E
1
H
E
7
12
e
D
B
X
D
1
0
5
10 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A
A
A
b
c
D
D
1
D
2
E
E
E
e
H
L
L
1
w
y
θ
1
2
3
1
2
12.2
9.6
12.3 1.0
2.0 12.0
11.7 0.6
max 2.8 0.15 2.65
nom
1.15 0.30
11.1 1.5
5.72 2.2
5.12 1.6
8°
mm
0.25
1.3 0.25 0.1
min 2.4
0
2.35
0.9 0.24 11.8 10.5
9.2
0°
Note
1. Plastic or metal protrusions of 0.2 mm max per side are not included.
sot8005_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
20-03-11
20-03-16
SOT8005
Fig. 5. Package outline CCPAK (SOT8005)
©
GAN039-650NTBA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Objective data sheet
19 April 2021
7 / 10
Nexperia
GAN039-650NTBA
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
13. Soldering
Footprint information for reflow soldering of CCPAK1212i package
SOT8005
12.5
11.8
1.4
1.3
1.2
0.6
0.7
2
1.8 1.7 1.6
9.6
9.9 13.5
recommended stencil thickness: 0.15 mm
occupied area
solder land
solder resist
solder paste
Dimensions in mm
20-03-16
Issue date
sot8005_fr
Fig. 6. Reflow soldering footprint for CCPAK (SOT8005)
©
GAN039-650NTBA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Objective data sheet
19 April 2021
8 / 10
Nexperia
GAN039-650NTBA
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
14. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Disclaimers
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
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Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
GAN039-650NTBA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Objective data sheet
19 April 2021
9 / 10
Nexperia
GAN039-650NTBA
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 3
10. Characteristics............................................................4
11. Application information..............................................5
12. Package outline.......................................................... 7
13. Soldering..................................................................... 8
14. Legal information........................................................9
© Nexperia B.V. 2021. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 19 April 2021
©
GAN039-650NTBA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Objective data sheet
19 April 2021
10 / 10
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