NXT4556UP_技术文档

NXT4556

SIM card interface level translator

Rev. 2 — 15 June 2022

Product data sheet

1. General description

The NXT4556 device is built for interfacing a SIM card with a single low-voltage host side interface.

The NXT4556 has three level translators to convert the data, RST and CLK signals between a

SIM card and a host microcontroller. A high speed level translation capable of supporting class-B,

class-C SIM cards. V_{CC_SIM}power-down initiates a shutdown sequence on SIM card pins in

accordance with ISO-7816-3.

The NXT4556 is compliant with all ETSI, IMT-2000 and ISO-7816 SIM/Smart card interface

requirements.

2. Features and benefits

•

Support SIM cards and eSIM with supply voltages 1.62 V to 3.3 V

•

Host micro-controller operating voltage range: 1.08 V to 1.98 V

Automatic level translation of I/O, RST and CLK between SIM card and host side interface with

capacitance isolation

•

Incorporates shutdown feature for the SIM card signals according to ISO-7816-3

High V_{dis(UVLO_AC)}switching level, arranging quick shut down when V_{CC_SIM}powers down

Integrated pull-up resistors; no external resistor required

Integrated EMI Filters suppresses higher harmonics of digital I/O's

Low current shutdown mode < 1 μA

Supports clock speed beyond 5 MHz clock

Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and

antimony (Dark Green compliant)

•

ESD protection:

•

HBM ANSI/ESDA/JEDEC JS-001 exceeds 2 kV

CDM ANSI/ESDA/JEDEC JS-002 exceeds 1 kV

IEC61000-4-2 level 4, contact and air discharge on all SIM card-side pins exceeds 8 kV and

15 kV

•

Available in 9-pin wafer level chip-scale package (WLCSP); 9 bumps;

1.06 mm x 1.06 mm x 0.43 mm body; 0.35 mm pitch

3. Applications

•

NXT4556 can be used with a range of SIM card attached devices including:

•

Mobile and personal phones

Wireless modems

SIM card terminals

Nexperia

NXT4556

SIM card interface level translator

4. Ordering information

Table 1. Ordering information

Type

Package

number

Temperature range Name

Description

Version

NXT4556UP -40 °C to +85 °C

WLCSP9 wafer level chip-scale package; 9 bumps;

1.06 × 1.06 × 0.43 mm body

SOT8027-1

5. Marking

Table 2. Marking

Type number

Marking code[1]

NXT4556UP

z6

[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.

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NXT4556

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Product data sheet

Rev. 2 — 15 June 2022

2 / 19

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NXT4556

SIM card interface level translator

6. Functional diagram

V

CC_SIM

CC_HOST

V

CC_SIM

CC_HOST

R

S

RST_HOST

RST_SIM

R

pd

Shut down

V

CC_SIM

CC_HOST

R

S

CLK_HOST

CLK_SIM

R

pd

Shut down

V

CC_SIM

CC_HOST

R

pu

R

pu

ONE

SHOT

R

S

IO_HOST

IO_SIM

Control

Logic

R

pd

Shut down

NXT4556

aaa-034876

Fig. 1. Functional diagram

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Product data sheet

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NXT4556

SIM card interface level translator

7. Pinning information

7.1. Pinning

NXT4556

1

2

3

RST_HOST

RST_SIM

A

B

C

V

CC_HOST

NXT4556

ball A1

index area

1

2

3

A

B

C

CLK_HOST

IO_HOST

CLK_SIM

IO_SIM

GND

V

CC_SIM

aaa-034877

aaa-034878

Transparent top view

Fig. 2. Bump configuration for SOT8027-1 (WLCSP9)

Fig. 3. Bump mapping for SOT8027-1 (WLCSP9)

7.2. Pin description

Table 3. Pin description

Symbol

Bump Type

Description

RST_HOST A1

I

Reset input from host controller.

V_{CC_HOST}

RST_SIM

A2

A3

power

Supply voltage for the host controller side input/output pins (CLK_HOST, RST_HOST,

IO_HOST). This pin should be bypassed with a 0.1 µF ceramic capacitor close to the pin.

O

I

Reset output pin for the SIM card.

Clock input from host controller.

CLK_HOST B1

GND

B2

ground Ground for the SIM card and host controller. Proper grounding and bypassing are required

to meet ESD specifications.

CLK_SIM

IO_HOST

B3

C1

O

Clock output pin for the SIM card.

I/O

Host controller bidirectional data input/output. This pin can be driven from push-pull as well

as open-drain drivers.

V_{CC_SIM}

IO_SIM

C2

C3

power

I/O

Supply voltage for the SIM CARD side input/output pins. This input voltage ranges from

1.62 V to 3.3 V. This pin should be bypassed with a 0.1 μF ceramic capacitor close to the

pin.

SIM card bidirectional data input/output. The SIM card output must be on an open-drain

driver.

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NXT4556

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Product data sheet

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NXT4556

SIM card interface level translator

8. Functional description

8.1. Functional behavior

The functional diagram of the NTX4556 is shown in Fig. 1.

The upper part of Fig. 1 shows the RST and CLK channels which are uni-directional level shifters

from the host to the SIM card side.

The bottom part shows the architecture of the bidirectional I/O channel. Both on IO_HOST and

IO_SIM a resistor R_pupulls up the I/O node. On both sides an output stage is present that consists

of a PMOST and an NMOST device. Each output stage drives the output through a series resistor

R_S. Input stages sense the I/O nodes and pass LOW/HIGH information to the control logic that

controls the translator outputs and several pull-up and pull-down resistors.

The NXT4556 I/O channel does not require a dedicated input signal to control the direction of data

flow from IO_HOST to IO_SIM or from IO_SIM to IO_HOST. Change in driving direction is possible

when both sides are at HIGH state. The control logic recognizes the I/O node with the first falling

edge and grants control over the opposite I/O node. When for example the IO_HOST is turned

LOW, the control circuit will turn on the NMOST on the IO_SIM side, pulling LOW IO_SIM. The

IO_SIM pin is then an output only, until IO_HOST is turned HIGH and the translator has turned

IO_SIM HIGH again.

The PMOST devices are used to actively turn high the outputs. Each PMOST is driven by a one-

shot circuit that generates a pulse. For example: Assuming HOST to SIM communication, when

the IO_HOST is turned HIGH, it will activate the one shot circuit on the IO_SIM side. A pulse starts,

arranging a fast LOW to HIGH transition on IO_SIM. When the pulse has finished, the PMOST

is released. At that stage, the system returns to a standard open drain state whereby the pull

resistors keep the I/O nodes HIGH.

At the same time, at a LOW to HIGH transition, the one shot on the input side is activated as well.

In an open drain application, this creates a typical input LOW to HIGH waveform. Fig. 4 shows an

example of a LOW to HIGH transition in an open drain application.

aaa-034373

3.5

V

IO_SIM

V

_

V

_

(V)

IO HOST

(V)

IO SIM

2.5

1.5

2.5

1.5

0.5

-0.5

V

IO_HOST

0.5

-0.5

-200

-100

0

100

200

t (ns)

Fig. 4. LOW to HIGH transition for IO_HOST to IO_SIM communication

Looking at the input signal, the first part of the LOW to HIGH transition is an exponential curve

caused by the I/O node capacitance being charged via the pull-up resistor. The second part starts

when the input signal crosses the input switching level. The rising edge is accelerated dramatically

by the PMOST that is turned on by the one shot on the input side.

In case of a communication error or some other unforeseen incident that may drive both connected

sides of the drivers at the same time, the internal logic automatically prevents stuck-at situation.

This ensures that both I/Os will return to HIGH level once released from being driven LOW.

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Product data sheet

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5 / 19

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NXT4556

SIM card interface level translator

In shut down mode, the control circuit disables all output stages. Additionally, in shut down mode,

the pull-up resistor on IO_SIM side is disabled, and all pull-down resistors R_pdon SIM side are

enabled, pulling LOW the pins on the SIM side. The shut down sequence is explained in more

detail in Section 8.3.

8.2. Window of I/O communication

When the translator is in operating mode, I/O communication can take place through the I/O

channel. Communication can take place in both directions IO_HOST ↔ IO_SIM. Additionally,

during operating mode, the RST_HOST and CLK_HOST signals are passed to RST_SIM and

CLK_SIM respectively.

The translator is active when V_{CC_HOST}and V_{CC_SIM}are at a proper level. Fig. 5 shows how

V_{CC_SIM}controls the translator mode. V_{CC_HOST}is assumed to be default present and is not shown

in the waveform.

When V_{CC_SIM}has turned HIGH, I/O communication can commence after a certain amount of time:

Δt > 300 ns.

It is assumed that during the power up sequence, the nodes of IO_HOST and and IO_SIM are not

pulled down by the host controller and the SIM card. The translator has integrated pull-up resistors

and will turn HIGH both IO_HOST and IO_SIM. The pull-up resistors R_puare pointed out in Fig. 1.

V

dis(UVLO_AC)

V

CC_SIM

en(UVLO)

t

IO_HOST/IO_SIM

IO communication

aaa-034880

Δt > 300 ns

Fig. 5. Timing window for I/O communication

When V_{CC_SIM}drops below V_dis(UVLO), the translator turns to shutdown mode. Section 8.3 illustrates

the shutdown sequence in more detail.

8.3. Shutdown sequence

The ISO 7816-3 specification specifies the shutdown sequence for the SIM card signals to ensure

that the card is properly disabled for power savings. Also, during hot swap, the orderly shutdown of

these signals helps to avoid any improper write and corruption of data.

When V_{CC_SIM}drops below V_{dis(UVLO_AC)}, the shutdown sequence is initiated. Fig. 6 illustrates the

shutdown sequence initiated by V_{CC_SIM}being powered down.

The shut down sequence starts by pulling down the RST_SIM output. Once RST_SIM is turned

LOW, CLK_SIM and IO_SIM are pulled LOW sequentially, one-by-one. Internal pull-down resistors

on the SIM pins are used to pull the SIM channels LOW. The internal pull-down resistors, R_pd, that

pull down the three pins on the SIM side are shown in Fig. 1. The shutdown sequence is completed

in a few microseconds. The interval time (Δt), is typically 4 μs.

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NXT4556

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Product data sheet

Rev. 2 — 15 June 2022

6 / 19

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NXT4556

SIM card interface level translator

V

dis(UVLO_AC)

V

CC_SIM

RST_SIM

CLK_SIM

IO_SIM

t

aaa-034881

Δt = 4 µs (typical)

The shaded areas indicate that the signals are HIGH or LOW.

Fig. 6. Shutdown sequence for RST_SIM, CLK_SIM and IO_SIM of NXT4556 SIM card

translator

8.4. UVLO

When V_{CC_SIM}drops below V_{dis(UVLO_AC)}, the translator goes to shut down mode. This is illustrated

in Fig. 5. The switching level V_{dis(UVLO_AC)}has a high value of approximately 86 %xV_{CC_SIM}

.

The circuitry uses an AC detection mechanism that operates accurately with a falling slope that

is typical in the SIM card application. Next to this AC detection, a standard UVLO detection is

in place that has no condition with respect to the slope of the rising or falling V_{CC_SIM}. For the

standard UVLO, the parameters V_en(UVLO)and V_dis(UVLO)are involved which have lower values

than V_{dis(UVLO_AC)}. When V_{CC_SIM}is powered up, the translator is enabled when V_{CC_SIM}crosses

V_en(UVLO). This is illustrated in Fig. 5.

8.5. EMI filter

All output driver stages of I/O, RST and CLK channels are equipped with EMI filters to reduce

interference towards sensitive mobile communication.

8.6. ESD protection

The device has robust ESD protections on all SIM card pins. The architecture prevents any stress

for the host: the voltage translator discharges any stress to supply ground.

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Product data sheet

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NXT4556

SIM card interface level translator

9. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

V_ESDelectrostatic discharge SIM card side; IEC 61000-4-2; level 4; contact

-

±8

kV

voltage

discharge

SIM card side; IEC 61000-4-2; level 4; air

discharge

-

±15

kV

all other pins; IEC 61000-4-2; level 4

all other pins; HBM

-

±2

kV

V

[1]

[2]

-

all other pins; CDM

-

±1

V_{CC_HOST}supply voltage

GND - 0.5

4.6

V_{CC_SIM}

SIM card supply

voltage

V

V_I

input voltage

CLK_HOST; input signal voltage, HOST side

RST_HOST; input signal voltage, HOST side

IO_HOST; input signal voltage, HOST side

CLK_SIM; input signal voltage, SIM side

RST_SIM; input signal voltage, SIM side

IO_SIM; input signal voltage, SIM side

GND - 0.5

-55

4.6

V

°C

4.6

T_stg

storage temperature

+125

[1] Human Body Model (HBM) according to JESD22-A-A114.

[2] Charged-Device Model (CDM) according to JESD22-C101.

10. Recommended operating conditions

Table 5. Operating conditions

Symbol Parameter

Conditions

Min

1.08

1.62

-0.3

-40

Typ

Max

1.98 V

3.3

Unit

V

V_{CC_HOST}supply voltage

[1]

-

V_{CC_SIM}

V_I

card side supply voltage

-

V

input voltage

HOST side

SIM side

-

V_{CC_HOST}+ 0.3 V

V_{CC_SIM}+ 0.3

+85

V

T_amb

ambient temperature

+25

°C

[1] V_{CC_SIM}≥ V_{CC_HOST}

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Product data sheet

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NXT4556

SIM card interface level translator

11. Electrical characteristics

Table 6. Electrical characteristics

1.08 V ≤ V_{CC_HOST}≤ 1.98 V; 1.62 V ≤ V_{CC_SIM}≤ 3.3 V; GND = 0 V; unless otherwise specified.

Symbol

Parameter

Conditions

T_amb= -40 °C to +85 °C

Unit

Min

Typ[1]

Max

I_{CC_HOST}

supply current

operating mode; f_clk= 1 MHz;

IO_HOST = IO_SIM = HIGH

[2]

-

5

10

μA

shutdown mode; IO_HOST = HIGH

[3]

[2]

-

1

8

μA

I_{CC_SIM}

card side supply

current

operating mode;

2

IO_HOST = IO_SIM = HIGH;

CLK_HOST = RST_HOST = LOW

V_en(UVLO)

undervoltage

lockout enable

voltage

V_{CC_SIM}rising; V_{CC_HOST}= 1.8 V

V_{CC_SIM}falling; V_{CC_HOST}= 1.8 V

V_{CC_SIM}falling;

0.85

0.65

1.2

1.0

1.6

1.3

V

V_dis(UVLO)

undervoltage

lockout disable

voltage

V_{dis(UVLO_AC)}undervoltage

lockout disable

voltage

-dV/dt = 0.9 V/ms to 9 V/ms;

V_{CC_SIM}= 1.8 V

-

1.55

-

V

-dV/dt = 1.5 V/ms to 15 V/ms;

V_{CC_SIM}= 3.0 V

2.58

-dV/dt = 0.9 V/ms to 9 V/ms;

V_{CC_SIM}= 1.71 V to 1.89 V

0.86V_{CC_SIM}

-dV/dt = 1.5 V/ms to 15 V/ms;

V_{CC_SIM}= 2.85 V to 3.15 V

[1] Typical values measured at 25 °C.

[2] Internal pull-up resistance active on IO_HOST and IO_SIM

[3] Internal pull-up resistance active on IO_HOST

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Product data sheet

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NXT4556

SIM card interface level translator

Table 7. Static characteristics

1.08 V ≤ V_{CC_HOST}≤ 1.98 V; 1.62 V ≤ V_{CC_SIM}≤ 3.3 V; GND = 0 V; unless otherwise specified.

Symbol Parameter

Conditions

T_amb= -40 °C to +85 °C

Typ[1]

Unit

Min

Max

Level shifter

V_IH

HIGH-level

input voltage

RST_HOST, CLK_HOST

IO_HOST

[2] 0.65V_{CC_HOST}

0.5V_{CC_HOST}

-

V_{CC_HOST}+ 0.3 V

IO_SIM

[2] 0.5V_{CC_SIM}

-

V_{CC_SIM}+ 0.3

0.35V_{CC_HOST}

0.3V_{CC_HOST}

0.25V_{CC_SIM}

7.3

V

V_IL

LOW-level

RST_HOST, CLK_HOST

IO_HOST

[2]

-0.3

-

V

input voltage

-0.3

-

V

IO_SIM

-0.3

-

V

R_pu

pull-up

IO_SIM connected to V_{CC_SIM}

IO_HOST connected to V_{CC_HOST}

RST_SIM, CLK_SIM; I_OH= -1 mA

IO_SIM; I_OH= -10 μA

IO_HOST; I_OH= -10 μA

RST_SIM, CLK_SIM; I_OL= 1 mA

IO_SIM; I_OL= 1 mA

3.3

5.3

4.3

-

kΩ

V

resistance

2.8

6

V_OH

HIGH-level

0.85V_{CC_SIM}

V_{CC_SIM}+0.3

V_{CC_HOST}+0.3

200

output voltage

0.85V_{CC_SIM}

-

V

0.85V_{CC_HOST}

-

V

V_OL

LOW-level

-

50

400

mV

Ω

output voltage

300

IO_HOST; I_OL= 1 mA

CLK_SIM, RST_SIM, IO_SIM

300

R_pd

pull-down

resistance

-

EMI filter

R_S

series

resistance

IO_SIM

-

44

10

-

Ω

RST_SIM

CLK_SIM

IO_SIM

Ω

C_io

input/output

capacitance

pF

RST_SIM

CLK_SIM

[1] Typical values measured at 25 °C.

[2] V_IL, V_IHdepend on the individual supply voltage per interface.

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Product data sheet

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NXT4556

SIM card interface level translator

Table 8. Dynamic characteristics

Push-pull: test circuit see Fig. 8; C_L= 50 pF.

Open-drain: test circuit see Fig. 9; C_{IO_HOST}= 10 pF; C_{IO_SIM}= 30 pF.

For waveform see Fig. 7.

Symbol Parameter

Conditions

T_amb= -40 °C to +85 °C;

V_{CC_SIM}= 1.8 V ± 0.18 V V_{CC_SIM}= 3.0 V ± 0.3 V

Unit

Min

Typ[1]

Max

Min

Typ[1]

Max

V_{CC_HOST}= 1.2 V ± 0.12 V

t_pd

propagation

delay

I/O channel; push-pull

I/O channel; open-drain

[2]

[3]

-

12

15

12

20

25

20

-

12

15

12

20

25

20

ns

CLK and RST channels;

push-pull

t_t

transition time IO_HOST; push-pull

-

10

-

10

ns

IO_SIM; RST_SIM; CLK_SIM;

push-pull

t_sk

skew time

between channels IO_SIM and

CLK_SIM; push-pull

-

2

-

2

-

ns

f_clock

f_data

clock

frequency

CLK channel; push-pull

[4]

25

MHz

data rate

I/O channel; push-pull

[4]

-

5

-

5

Mbps

I/O channel; open-drain;

see Fig. 9

800

800 kbps

V_{CC_HOST}= 1.8 V ± 0.18 V

t_pd

propagation

delay

I/O channel; push-pull

I/O channel; open-drain

[2]

[3]

-

7

8

7

12

15

12

-

7

8

7

12

15

12

ns

CLK and RST channels;

push-pull

t_t

transition time IO_HOST; push-pull

-

10

-

10

ns

IO_SIM; RST_SIM; CLK_SIM;

push-pull

t_sk

skew time

between channels IO_SIM and

CLK_SIM; push-pull

-

2

-

2

-

ns

f_clock

f_data

clock

frequency

CLK channel; push-pull

[4]

25

MHz

data rate

I/O channel; push-pull

[4]

-

5

-

5

Mbps

I/O channel; open-drain;

see Fig. 9

800

800 kbps

[1] Typical values measured at 25 °C.

[2] t_pdis the same as t_PHLand t_PLH

[3] t_tis the same as t_THLand t_TLH

[4] Criteria: duty cycle between 40% and 60%; Voltage swing between 10% V_CCIand 90% V_CCI

.

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Product data sheet

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NXT4556

SIM card interface level translator

11.1. Waveforms and test circuits

V

I

input

V

M

GND

t

PHL

PLH

V

OH

90 %

output

V

M

10 %

V

OL

t

THL

TLH

002aag078

Measurement points are given in Table 8.

V_OLand V_OHare typical output voltage levels that occur with the output load.

Fig. 7. Data input to data output propagation delay times

t

r

t

f

V

I

90 %

positive

pulse

10 %

0 V

V

CCO

CCI

V

O

I

G

DUT

C

L

aaa-034882

Test data is given in Table 9.

All input pulses are supplied by generators having the following characteristics:

PRR ≤ 10 MHz; Z_O= 50 Ω; t_r, t_f≤ 2.5 ns.

C_L= Load capacitance including jig and probe capacitance.

V_CCIis the supply voltage associated with the input.

V_CCOis the supply voltage associated with the output.

Fig. 8. Test circuit for measuring switching times for push-pull drive

Table 9. Test data for push-pull drive

Supply voltage

V_{CC_HOST}

Direction

Input

V_I

Output

V_M

Load

C_L

V_{CC_SIM}

V_M

1.08 V to 1.98 V 1.62 V to 3.3 V host side to SIM card side

1.08 V to 1.98 V 1.62 V to 3.3 V SIM card side to host side

V_{CC_HOST}0.5V_{CC_HOST}0.5V_{CC_SIM}

50 pF

V_{CC_SIM}

0.5V_{CC_SIM}

0.5V_{CC_HOST}50 pF

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Product data sheet

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NXT4556

SIM card interface level translator

t

f

r

V

I

90 %

positive

pulse

10 %

0 V

V

CCO

CCI

V

O

I

50 Ω

DUT

C

in

C

L

G

aaa-034883

Test data is given in Table 10.

Pulse generator (G) has the following characteristics: PRR ≤ 10 MHz; Z_O= 50 Ω; t_r, t_f≤ 2.5 ns.

C_L= Load capacitance including jig and probe capacitance.

V_CCIis the supply voltage associated with the input.

V_CCOis the supply voltage associated with the output.

Rise time on input pin strongly depends on source impedance, internal pull-up resistor and load capacitance (C_in).

Fig. 9. Test circuit for measuring switching times for open drain drive

Table 10. Test data for open drain drive

Supply voltage

V_{CC_HOST}

Direction

Input

V_I

Output

V_M

Load

C_in

V_{CC_SIM}

V_M

C_L

1.08 V to 1.98 V 1.62 V to 3.3 V host side to

SIM card side

V_{CC_HOST}

0.6V_{CC_HOST}0.6V_{CC_SIM}

10 pF

30 pF

1.08 V to 1.98 V 1.62 V to 3.3 V SIM card side V_{CC_SIM}

to host side

0.5V_{CC_SIM}

0.5V_{CC_HOST}30 pF

10 pF

12. Application information

The application circuit for the NXT4556, which shows the typical interface with a SIM card, is

shown in Fig. 10. Supply decoupling capacitors (100 nF) are recommended and should be placed

close to the translator product.

V

(1.08 V to 1.98 V)

V

(1.62 V to 3.3 V)

CC_HOST

CC_SIM

100 nF

HOST

PROCESSOR

NXT4556

SIM CARD

RST_HOST

RST_SIM

CLK_SIM

IO_SIM

CLK_HOST

IO_HOST

LEVEL

TRANSLATOR

aaa-034884

Fig. 10. NXT4556 application circuit interfacing with typical SIM card

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NXT4556

SIM card interface level translator

13. Design and assembly recommendations

13.1. PCB design guidelines

For optimum performance, use a Non-Solder Mask PCB Design (NSMD), also known as a

copper-definied design, incorporating laser-drilled micro-vias connecting the ground pads to a

buried ground-plane layer. This results in the lowest possible ground inductance and provides the

best high frequency and ESD performance. For this case, refer to Table 11 for the recommended

PCB design parameters.

Table 11. Recommended PCB design parameters

Parameter

Value or specification

circular

PCB Cu pad shape

PCB Cu pad diameter

PCB solder resist diameter

WLCSP pad diameter (UBM)

200 µm

270 µm

200 µm

13.2. PCB assembly guidelines for Pb-free soldering

Table 12. Assembly recommendations

Parameter

Value or specification

circular

PCB stencil shape

PCB stencil aperture diameter

PCB stencil thickness

Solder paste material

Solder reflow profile

200 µm

80 µm

SnAg₄Cu (Cu 0.5%) (SAC405)

see Fig. 11

T

(°C)

T

reflow(peak)

250

230

217

cooling rate

preheat

t (s)

t

2

1

t

3

4

t

5

001aai943

The device can withstand at least three reflows with this profile.

Fig. 11. Pb-free solder reflow profile

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Product data sheet

Rev. 2 — 15 June 2022

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Nexperia

NXT4556

SIM card interface level translator

Table 13. Reflow soldering process characteristics

T_amb= 25 °C; unless otherwise specified.

Symbol Parameter

Conditions

Min

230

Typ Max Unit

t_reflow(peak)peak reflow temperature

-

260 °C

t₁

time 1

time 2

time 3

time 4

time 5

soak time

60

-

180

30

s

t₂

time during T ≥ 250 °C

time during T ≥ 230 °C

time during T ≥ 217 °C

t₃

10

30

-

50

t₄

150

540

t₅

dT/dt

rate of change of

temperature

cooling rate

preheat

-

-6 °C/s

4.0 °C/s

2.5

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Product data sheet

Rev. 2 — 15 June 2022

15 / 19

Nexperia

NXT4556

SIM card interface level translator

14. Package outline

WLCSP9: wafer level chip-scale package; 9 bumps; 1.06 mm x 1.06 mm x 0.43 mm body

SOT8027-1

s

C

2x

this surface is

fully covered by

B

E

A

`'Backside Coating''

bump A1

index area

A

2

D

A

1

detail X

s

C

2x

C

e

y

1

y

C

9x

C

B

A

e

bump A1

index area

1

2

3

M

v

w

C A B

C

b

(9x)

X

0

1 mm

scale

v

Dimensions (mm are the original dimensions)

Unit

max 0.468 0.183 0.285 0.245

A

b

D

E

e

s

w

y

1

2

nom

min

mm

0.430 0.163 0.267 0.225 1.06 1.06 0.35 0.025 0.015 0.05 0.05 0.06

0.392 0.143 0.249 0.205

Note

1. Dimension A includes backside coating thickness.

sot8027-1_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

21-06-11

21-06-16

SOT8027-1

Fig. 12. Package outline SOT8027-1 (WLCSP16)

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Product data sheet

Rev. 2 — 15 June 2022

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Nexperia

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SIM card interface level translator

15. Abbreviations

Table 14. Abbreviations

Acronym

Description

CDM

ESD

HBM

MSL

PCB

SIM

Charged-Device Model

ElectroStatic Discharge

Human Body Model

Moisture Sensitivity Level

Printed-Circuit Board

Subscriber Identification Module

16. Revision history

Table 15. Revision history

Document ID

Release date Data sheet status

Change notice Supersedes

NXT4556 v.2

Modifications:

20220615

Product data sheet

-

NXT4556 v.1

•

Table 3 corrected (errata).

Fig. 4 corrected (errata).

Fig. 10 corrected (errata).

NXT4556 v.1

20220502

Product data sheet

-

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17 / 19

Nexperia

NXT4556

SIM card interface level translator

injury, death or severe property or environmental damage. Nexperia and its

suppliers accept no liability for inclusion and/or use of Nexperia products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

17. Legal information

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Data sheet status

Document status Product

Definition

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

[1][2]

status [3]

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

sole responsibility to determine whether the Nexperia product is suitable

and fit for the customer’s applications and products planned, as well as

for the planned application and use of customer’s third party customer(s).

Customers should provide appropriate design and operating safeguards to

minimize the risks associated with their applications and products.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

Nexperia does not accept any liability related to any default, damage, costs

or problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

customer(s). Customer is responsible for doing all necessary testing for the

customer’s applications and products using Nexperia products in order to

avoid a default of the applications and the products or of the application or

use by customer’s third party customer(s). Nexperia does not accept any

liability in this respect.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the internet at https://www.nexperia.com.

Definitions

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the relevant

full data sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of commercial sale — Nexperia products are

sold subject to the general terms and conditions of commercial sale, as

published at http://www.nexperia.com/profile/terms, unless otherwise agreed

in a valid written individual agreement. In case an individual agreement is

concluded only the terms and conditions of the respective agreement shall

apply. Nexperia hereby expressly objects to applying the customer’s general

terms and conditions with regard to the purchase of Nexperia products by

customer.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and customer have explicitly

agreed otherwise in writing. In no event however, shall an agreement be

valid in which the Nexperia product is deemed to offer functions and qualities

beyond those described in the Product data sheet.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. Nexperia takes no responsibility

for the content in this document if provided by an information source outside

of Nexperia.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified, the

product is not suitable for automotive use. It is neither qualified nor tested in

accordance with automotive testing or application requirements. Nexperia

accepts no liability for inclusion and/or use of non-automotive qualified

products in automotive equipment or applications.

In no event shall Nexperia be liable for any indirect, incidental, punitive,

special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without Nexperia’s warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

Nexperia’s specifications such use shall be solely at customer’s own risk,

and (c) customer fully indemnifies Nexperia for any liability, damages or failed

product claims resulting from customer design and use of the product for

automotive applications beyond Nexperia’s standard warranty and Nexperia’s

product specifications.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards customer

for the products described herein shall be limited in accordance with the

Terms and conditions of commercial sale of Nexperia.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

Right to make changes — Nexperia reserves the right to make changes

to information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

publication hereof.

Trademarks

Suitability for use — Nexperia products are not designed, authorized or

warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction

of an Nexperia product can reasonably be expected to result in personal

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

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Product data sheet

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Nexperia

NXT4556

SIM card interface level translator

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Ordering information....................................................2

5. Marking..........................................................................2

6. Functional diagram.......................................................3

7. Pinning information......................................................4

7.1. Pinning.........................................................................4

7.2. Pin description.............................................................4

8. Functional description................................................. 5

8.1. Functional behavior..................................................... 5

8.2. Window of I/O communication.....................................6

8.3. Shutdown sequence.................................................... 6

8.4. UVLO...........................................................................7

8.5. EMI filter....................................................................7

8.6. ESD protection............................................................ 7

9. Limiting values............................................................. 8

10. Recommended operating conditions........................8

11. Electrical characteristics............................................9

11.1. Waveforms and test circuits.....................................12

12. Application information........................................... 13

13. Design and assembly recommendations............... 14

13.1. PCB design guidelines............................................ 14

13.2. PCB assembly guidelines for Pb-free soldering.......14

14. Package outline........................................................ 16

15. Abbreviations............................................................17

16. Revision history........................................................17

17. Legal information......................................................18

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 15 June 2022

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Product data sheet

Rev. 2 — 15 June 2022

19 / 19


型号：	NXT4556UP
厂家：	Nexperia
描述：	SIM card interface level translatorProduction
文件：	总19页 (文件大小：263K)
中文：	中文翻译
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NXT4556UP [NEXPERIA]

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