NXV08H400XT2 [ONSEMI]
Dual Half Bridge Automotive Power MOSFET MODULE;
| 型号： | NXV08H400XT2 |
| 厂家： | 
ONSEMI |
| 描述： | Dual Half Bridge Automotive Power MOSFET MODULE |
| 文件： | 总10页 (文件大小：621K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Automotive Power MOSFET
Module
NXV08H400XT2
Features
• 2 Phase MOSFET Module
At Customer Side this Module Can Be Used as 1/2 Bridge MOSFET
Module by Combining 2 Phase Out Power Terminals
• Electrically Isolated DBC Substrate for Low Rthjc
• Compact Design for Low Total Module Resistance
• Module Serialization for Full Traceability
APM17−MDA
CASE MODHU
MARKING DIAGRAM
• Module Level AQG324 Qualified. Components Inside are
AEC Q101 (MOSFET) & AEC Q200 (Passives) Qualified
• UL 94 V−0 Compliant
• This Device is Pb−Free and is RoHS Compliant
NXV08H400XT2
ZZZ ATYWW
NNNNNN
Applications
• 48 V Inverter, 48 V Traction
Benefits
• Enable Design of Small, Efficient and Reliable System for Reduced
NXV08H400XT2 = Specific Device Code
ZZZ
AT
= Lot ID
= Assembly & Test Location
= Year
Vehicle Fuel Consumption and CO Emission
2
• Simplified Vehicle Assembly
Y
• Low Thermal Resistance to Junction to Heat Sink by Direct
Mounting via Thermal Interface Material between Module Case and
Heat Sink
WW
NNN
= Work Week
= Serial Number
• Low Inductance
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
January, 2023 − Rev. 2
NXV08H400XT2/D
NXV08H400XT2
ORDERING INFORMATION
Pb−Free and
RoHS Compliant
Operating Ambient
Temperature Range
Part Number
Package
Packing Method
NXV08H400XT2
APM17−MDA
yes
−40∼125°C
Tube
Pin Configuration
14
8
7
1
15
16
17
Figure 1. Pin Configuration
PIN DESCRIPTION
Pin No.
Description
Remark
1
2
Q2 Gate
Q2 Source Sense
B+ #2 Sense
Q4 Gate
3
4
5
Q4 Source Sense
NTC1
6
7
Phase Out2
Phase Out1
NTC2
For 3 phase motor inverter, those 2 pins can be used as one
phase out
8
9
10
11
12
13
14
15
16
17
Q3 Source Sense
Q3 Gate
B+ #1 Sense
Q1 Source Sense
Q1 Gate
B+ #1
GND
B+ #2
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2
NXV08H400XT2
Block Diagram
B1+ Sense
B1+
B2+
B2+ Sense
Q1
Q1 Gate
C
R
C
R
Q2
Q2 Gate
Q1 Source Sense
Q2 Source Sense
Phase 2
Phase 1
Q3
Q3 Gate
Q4
Q4 Gate
Q3 Source Sense
Q4 Source Sense
NTC1
NTC2
GND
Figure 2. Schematic
Solder
Flammability Information
All materials present in the power module meet UL
Solder used is a lead free SnAgCu alloy.
flammability rating class 94V−0.
Base of the leads, at the interface with the package body
should not be exposed to more than 200°C during mounting
on the PCB, this to prevent the remelt of the solder joints.
Compliance to RoHS Directives
The power module is 100% lead free and RoHS compliant
2000/53/C directive.
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
J
Symbol
Parameter
Max.
80
Unit
V
VDS(Q1∼Q4)
VGS(Q1∼Q4)
EAS(Q1∼Q4)
Drain to Source Voltage
Gate to Source Voltage
20
V
Single Pulse Avalanche Energy (Note 1)
Maximum Junction Temperature
Storage Temperature
2445
175
125
mJ
°C
°C
T
J
T
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Starting T = 25°C, L = 0.47 mH, I = 102 A, V = 72 V during inductor charging and V = 0 V during time in avalanche.
J
AS
DD
DD
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3
NXV08H400XT2
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
J
Characteristic
Condition
I = 1 mA, V = 0 V
D
Min
80
2
Typ
−
Max
−
Unit
BVDSS
VGS(th)
VSD
Drain−to−Source Breakdown Voltage
Gate to Source Threshold Voltage
Source−to−Drain Diode Voltage
GS
V
GS
= V , I = 1 mA
−
4.6
V
V
DS
D
I
= 160 A, V = 0 V
−
0.79
0.65
1.1
SD
GS
Measured
RDS(ON) Q1, Q2
Q1, Q2 (High Side) MOSFET
(Note 2) (Note 3)
V
GS
= 12 V, I = 160 A, T = 25°C
−
0.765
mW
D
J
Measured
Q3, Q4 (Low Side) MOSFET
(Note 2) (Note 3)
V
= 12 V, I = 160 A, T = 25°C
−
−
0.60
0.46
0.71
0.58
mW
mW
GS
D
J
RDS(ON) Q3, Q4
Pure RDS(ON) Q1, Q2, Rdson Measurement with Kelvin pin
V
= 12 V, I = 160 A, T = 25°C
GS D J
Q3, Q4
with min impact of measurement path
(Note 2)
IGSS
IDSS
Gate−to−Source Leakage Current
Drain−to−Source Leakage Current
V
GS
V
DS
V
GS
=
20 V, V = 0 V, T = 25°C −100
−
−
+100
2
nA
mA
DS
J
= 80 V, V = 0 V, T = 25°C
−
−
GS
J
Module RDS(ON) for Q1 and Q2:
From B+1 (or B+2), via Q1 (or Q2), to Phase Out 1 (Phase Out 2)
(Note 3)
= 12 V, I = 160 A, T = 25°C
0.96
1.32
mW
D
J
Module RDS(ON) for Q3 and Q4:
From Phase Out 1 (Phase Out 2), via Q3 (Q4), to GND PINs
(Note 3)
V
GS
= 12 V, I = 160 A, T = 25°C
−
0.9
1.25
mW
D
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. All bare die MOSFETs have same die size and same level of Rdson value. However the different Rdson values listed in the datasheet are
due to the different access points available inside the module for Rdson measurement. Q3 and Q4 (Low side FETs) has the shortest Rdson
measurement path in the layout. For exact FET rdson, it is recommended to use the Rdson value of Q3 or Q4 for the Kelvin pin with min
impact of measurement path. Here Pure Rdson values of Q1,Q2,Q3,Q4 are from Q3 and Q4 measurement from NXV08H400XT1 datasheet.
This value to be used for the actual MOSFET Rdson for Power loss and Temperature simulations.
3. Module Rdson means total resistance of the measurement path btw Power terminals, referring to the resistance measurement methods
table.
RESISTANCE MEASUREMENTS METHODS
+ Force Pin#
B1+
− Force Pin#
Phase1
Phase2
GND
+ Sense Pin#
B1+ Sense
B2+ Sense
Q1 Source Sense
Q2 Source Sense
B1+
− Sense Pin#
Q1 Source Sense
Q2 Source Sense
Q3 Source Sense
Q4 Source Sense
Phase1
FET Rdson Q1
FET Rdson Q2
B2+
FET Rdson Q3
Phase1
Phase2
B1+
FET Rdson Q4
GND
Module Rdson Q1
Module Rdson Q2
Module Rdson Q3
Module Rdson Q4
Phase1
Phase2
GND
B2+
B2+
Phase2
Phase1
Phase2
Phase1
GND
GND
Phase2
GND
TEMPERATURE SENSE (NTC THERMISTOR)
Voltage
Parameter
Min
Typ
Max
Unit
Current = 1 mA, Temperature 25°C
7.5
−
12
V
THERMAL RESISTANCE
Parameter
Min
Typ
Max
Unit
Rthjc: Thermal Resistance Junction to case,
Single Inverter FET
Q1, Q2, Q3, Q4 Thermal Resistance J−C
−
−
0.19
°C/W
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4
NXV08H400XT2
ISOLATION VOLTAGE (Isolation voltage between the Base plate and to control pins or power terminals.)
Test
Test Condition
VAC = 3 kV
Test Time
Min
Max
Unit
Leakage @ Isolation Voltage (Hi−Pot)
Time = 1 s
−
250
mA
DYNAMIC AND SWITCHING CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Condition
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 40 V, V = 0 V, f = 750 kHz
−
−
−
−
−
−
−
30,150
4,505
77
−
−
−
−
−
−
−
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Gate Resistance
rss
R
f = 750 kHz
4.3
g
Q
Total Gate Charge
V
GS
= 0 to 12 V, I =160 A
502
193
89
nC
nC
nC
g(tot)
D
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
gs
gd
Q
SWITCHING CHARACTERISTICS
t
Turn−On Time
V
DD
V
GS
= 48 V I = 400 A
−
−
−
−
−
−
710
235
475
608
290
898
−
−
−
−
−
−
ns
ns
ns
ns
ns
ns
on
, D
= 12 V, R (on/off) = 15/15 W
G
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Turn−Off Time
d(on)
t
r
t
d(off)
t
f
t
off
DRAIN−SOURCE DIODE CHARACTERISTICS
t
Reverse Recovery Time
V
DD
V
GS
= 48 V I = 400 A
−
−
59
−
−
ns
RR
, D
= 12 V, R (on/off) = 15/15 W
G
Q
Reverse Recovery Charge
1433
nC
RR
4. Dynamic & Switching characteristics data is by characterization test result and guaranteed by design factors.
COMPONENTS
Component
MOSFET
NTC
Description
Type
Qty.
4
Specification
80 V 0.58 mW
B−Constant
Bare Die
Bare Die
Discrete
10 kW 1%
1,600 x 800 mm
1
B
= 3380K
= 3435K
= 3455K
25/50
25/85
25/100
B
B
Capacitor (Snubber)
Resistor (Snubber)
1,800 x 800 mm
Discrete
Discrete
2
2
15 nF
1 W
2,000 x 1,250 mm
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5
NXV08H400XT2
TYPICAL CHARACTERISTICS
10000
1000
100
T = 25°C
J
T = 150°C
J
10
1
0,001 0,01
0,1
1
10
100
1000
10000
t , TIME IN AVALANCHE (ms)
AV
Figure 3. Unclamped Inductive Switching Capability
Figure 4. Saturation Characteristics
70
2,4
2
I
V
= 160 A
= 10 V
I
= 160 A
D
D
60
50
40
30
20
10
0
GS
1,6
1,2
0,8
0,4
T = 175°C
J
T = 25°C
J
2
4
6
8
10
12
−75 −50 −25
0
25 50 75 100 125 150 175 200
V
GS
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. RDSON vs. Gate Voltage
Figure 6. RDSON vs. Temperature
1,3
1,1
0,9
0,7
0,5
0,3
1,2
1,1
1
I
D
= 1 mA
I
D
= 5 mA
0,9
0,8
0,7
−80
−40
0
40
80
120
160
200
−75 −50 −25
0
25 50 75 100 125 150 175 200
T , AMBIENT TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 8. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 7. Normalized Gate Threshold Voltage
vs. Temperature
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NXV08H400XT2
TYPICAL CHARACTERISTICS (CONTINUED)
12
I
D
= 160 A
100000
10000
1000
C
V
= 40 V
iss
DD
9
6
3
0
V
DD
= 32 V
V
DD
= 48 V
C
oss
C
rss
100
10
1
f = 750 kHz
= 0 V
V
GS
0,1
1
10
80
0
50 100 150 200 250 300 350 400 450 500 550
Qg, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance vs. Drain to Source Voltage
Figure 10. Gate Charge vs. Drain to Source Voltage
50000
350
300
R
Limit
DS(on)
Thermal Limit
Package Limit
10000
1000
100
1 ms
10 ms
100 ms
1 ms
200
100
0
10 ms
100 ms/DC
R
Limit
DS(on)
10
SINGLE PULSE
= 0.19°C/W
R
q
JC
1
T
C
= 25°C
0,1
0,1
1
10
100
500
0.00
2.00
V , GATE TO SOURCE VOLTAGE (V)
GS
4.00
6.00
8.00
10.00
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 11. Safe Operating Area
Figure 12. Transfer Characteristics
T , CASE TEMPERATURE (°C)
C
Figure 13. Body Diode Current
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7
NXV08H400XT2
Figure 14. Flatness Measurement Position
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Device Flatness
Mounting Torque
Weight
Test Conditions
Min
0
Typ
−
Max
150
Units
um
Refer to the package dimensions
Mounting screw: M3, recommended 0.7 N•m
0.4
−
−
1.4 (Note 5)
−
N•m
g
21.2
5. Max Torque rating can be different by the type of screw, such as the screw head diameter, use or without use of Washer. In case of special
screw mounting method is applied, contact to onsemi for the proper information of mounding condition.
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
APM17−MDA AUTOMOTIVE MODULE
CASE MODHU
ISSUE C
DATE 07 DEC 2021
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
ZZZ = Lot ID
*This information is generic. Please refer to
AT
Y
= Assembly & Test Location
= Year
XXXXXXXXXXXXXXXX
ZZZ ATYWW
NNNNNNN
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
NNN = Serial Number
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON29463H
APM17−MDA AUTOMOTIVE MODULE
PAGE 1 OF 1
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